EXHIBIT 10.11
CORPORATE AGREEMENT NO. 92-019
by and between
TOREX SEMICONDUCTOR LTD.
and
NATIONAL SEMICONDUCTOR CORPORATION
This Agreement is made and entered into the 20th day of February, 1992, by and
between National Semiconductor Corporation, with its principal place of business
at 2900 Semiconductor Drive, Santa Clara, California (hereinafter referred to as
"NSC"), and Torex Semiconductor Ltd., with its principal place of business at
3833 Kinoko, lbara, Okayama 715, Japan, (hereinafter referred to as "SELLER").
NSC and SELLER may be referred to herein as a PARTY or the PARTIES, as the case
may require.
1. SCOPE
The purpose of this Agreement is to establish the terms and conditions under
which SELLER will sell to NSC Discrete Semiconductor dice and/or wafers and will
consider the purchase of other semiconductor materials and piece parts
"Products". This Agreement does not constitute an order. NSC Purchase Orders
will be required to purchase any Products from SELLER.
2. SPECIFICATIONS
SELLER shall manufacture and supply all Products listed on Attachment I and, for
those Products, SELLER shall meet all specifications established in Attachment
II. As newer and more advanced designs and materials are developed by SELLER
that improve the performance or cost effectiveness of the Products, SELLER shall
so advise NSC in writing and, upon NSC's written agreement, the specifications
established in Attachment II may be amended.
NSC retains the right to make changes in the specifications that may be required
by changes in the marketplace or to effect improvements in the Products. In the
event this right is exercised by NSC, the direction shall be in writing by the
Product Line Director and/or the Director of Purchasing. SELLER shall take
immediate action to incorporate such changes in the Products as soon as
possible. It such changes are directed, price(s) and time of performance may be
equitably adjusted.
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3. TERM.
The term of this Agreement shall be effective as of the first delivery of
qualified product per NSC's Qualification Notices under this Agreement
(____________, 1992) and shall continue thereafter for a period of three (3)
years, followed by a two (2) year renewal period with price renegotiation,
unless terminated earlier as otherwise provided herein. After the initial five
year term (three years with fixed price plus two years with renegotiated price),
the Agreement shall be automatically renewed for additional two year periods
with price renegotiation unless either PARTY gives at least 90 days written
notice of its intent to cancel. Conditions for price renegotiation are found in
Paragraph 4, Price and Payment.
Except as otherwise provided in this Agreement, upon termination of this
Agreement, the PARTIES shall complete performance of all purchase orders issued
and released prior to the effective date of termination, but this involuntary
period of purchase order completion is limited to 6 months, maximum, from date
of termination.
4. PRICE AND PAYMENT.
SELLER shall sell the products listed in Attachment I to NSC at the prices
specified therein.
Prices are firm (BASE PRICES) for a period of three years as listed on
Attachment I. Prices in years four and five will be renegotiated six months
prior to the end of the third year.
In the renegotiation, both PARTIES shall come together and negotiate necessary
price adjustments by taking into consideration all factors that may have impact
on the benefits of either PARTY. Examples of potential factors include, U.S.
Dollar/Yen exchange rate, material costs and results of continuous improvement
programs.
The PARTIES agree to bring this information forward into the negotiation and in
good faith make any necessary price adjustments that will be consistent with our
goal to nurture the benefits of this relationship for both PARTIES.
Both PARTIES shall agree upon price for years four and five no later than two
months prior to the beginning of the first period of year four. If price
agreement cannot be made between the two PARTIES for the remaining two year
period of the Agreement, then this Agreement will terminate per the terms of
Section 3 and Section 22 of this Agreement.
Payment Terms: DA 20 days
All invoices shall identify the purchase order number, vendor number, NSC part
number, blanket order line and release number, item description and quantity.
Multiple purchase order numbers or release numbers cannot he combined on the
same invoice.
Invoices will be sent to the accounting offices specified on each purchase
order.
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5. QUANTITIES
Quantities indicated on Attachment I are a portion of the total quantities
anticipated to be required based upon NSC plans as of the date of negotiations.
These quantities are subject to change based upon changing economic conditions.
As market conditions change such that NSC's sales plans are reduced or increased
in total, quantities procured under this Agreement will adjusted upward or
downward in accordance with the proportion that the original Agreement quantity
represents. Any additional materials or Products purchased from SELLER during
the term of the Agreement which reference this Agreement will be subject to the
terms and conditions of this Agreement.
Minimum electrical yield for diodes and transistors are stated on Attachment I.
6. ORDERS
Specific Purchase orders for Products purchased under this Agreement will be
issued by NSC. Order(s) will reference this Agreement, identify quantity
ordered, specify delivery point(s) and provide an order number of billing
purposes.
7. SCHEDULING
No later than one week before each NSC fiscal accounting period begins (each
period is 4 or 5 weeks), NSC shall provide SELLER with a rolling forecast per
NSC fiscal year calendar (attached). The period based forecast will commit for
six (6) periods, with a firm quantity commitment for three (3) periods rolling
and a firm quantity by device commitment for five (5) weeks rolling on a firm
weekly requirements basis. SELLER shall confirm acceptance of the forecast
within 5 working days of receipt.
Within the guidelines of the firm forecasting commitments set forth above, NSC
may without cost or liability, reschedule delivery or cancel any product upon at
least 5 weeks notice prior to the originally agreed scheduled delivery date.
8. LEADTIMES
SELLER agrees that leadtime on new orders shall not exceed 4 weeks, ex-factory,
for the initial order.
9. ADDITIONAL SERVICES
OFFICE SERVICES: In the event that business levels require additional support
from NSC, it may be necessary from time to time for NSC, with SELLER's consent,
to place several employees at SELLER's manufacturing location to coordinate
various functions such Quality Control, Scheduling, or Engineering Liaison.
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PROGRESS REVIEW: With SELLER's consent, NSC, shall have the right to enter
SELLER's premises during reasonable hours and on reasonable notice to inspect
the premises and to determine compliance with all requirements of the Agreement.
CUSTOMER SUPPORT: If requested by NSC SELLER will support discussions with NSC
customers or potential customers only if accompanied by NSC personnel and will
admit such customers to SELLER's manufacturing facilities for such purposes as
quality audits, engineering development and other special requests.
PRODUCT DEVELOPMENT: Both PARTIES agree to use best efforts to develop, design
and manufacture such new products as required to meet NSC customer requests.
QUALIFICATION: See Attachment IV.
PACK SPECIFICATION: Bulk package carton box and transmission order entry - see
Attachment V.
10. TECHNOLOGICAL/ECONOMIC OBSOLESCENCE
NSC reserves the right to reduce estimated quantities or to substitute new
products for those contained in Attachment I in the event that similar new
materials or products offering a superior technological or economic advantage
become generally available during the term of this Agreement.
SELLER shall be given a mutually agreed reasonable amount of time to match such
new material or products.
11. WARRANTIES
SELLER warrants that all products manufactured by SELLER and sold to NSC under
this Agreement shall, for a period of 12 months after delivery to NSC specified
in Section 8, be free from defects in workmanship and materials and meet and
conform to the specifications specified in Attachment II to the Agreement or
such other specifications as may be agreed to from time to time as evidenced by
written agreement signed by the PARTIES. SELLER further warrants that the
Products are of merchantable quality and are fit and suitable for the purpose
agreed upon by both PARTIES. These warranties are in addition to all other
warranties, express or implied, and shall survive delivery, inspection,
acceptance or payment by NSC and shall run to NSC, its successors, assigns,
customers and users of the products.
Any changes or waivers of any of the accepted specifications must be approved in
advance in writing by NSC and SELLER. Any SELLER invoice for SELLER products
implementing a change in the applicable specifications made by SELLER without
the advance written approval of NSC will not be authorized for payment and will
be subject to rejection.
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All products sold by SELLER under this Agreement shall have lot number
traceability. A "lot" is defined as wafers manufactured in one homogenous
diffusion run.
In the event that NSC finds the products delivered do not meet the warranties
specified herein or are defective, NSC shall notify SELLER in writing of the
claims. SELLER shall have the right to confirm the defects. If SELLER accepts
the claims NSC may, at its sole discretion, (i) require SELLER to promptly
correct, at no cost to NSC, any defective or non-conforming Products by repair
or replacement at a location specified by NSC; or (ii) return such defective or
non-conforming Products at SELLER's expense to SELLER and recover from SELLER
the price thereof.
12. PROCESS CHANGES
After SELLER's process(es) for fabricating Products sold under this Agreement
has been qualified by NSC, that process(es) shall remain unchanged. Attachment
III specifies the base line process(es) (manufacturing configuration) which can
only be changed by following the procedures set forth in this Section. In
addition, SELLER shall follow the procedures and rules set forth in Attachment
IV to ensure the reliability of the Products sold by NSC under this Agreement.
SELLER's conformity to the qualified processes is intended to ensure that SELLER
satisfies the intent of Section 2 of NSC SOP-3-273, a copy of which has been
provided to SELLER for reference purposes. Process changes proposed by SELLER or
required by NSC to remedy reliability problems shall be implemented as follows:
a) SELLER will provide NSC with written notice of the proposed process
change, accompanied by appropriate data to support the change.
b) NSC will have ten (10) working days to accept or reject the proposed
change in writing.
c) If NSC accepts the proposed change, the modified process shall become the
qualified base line process and SELLER shall, through lot traceability,
identify the Products processed under the modified process, with NSC
having the right at its sole discretion to require requalification of
SELLER Product where there has been a major process change.
d) If NSC rejects the proposed change or fails to respond to a change
proposed by SELLER within the said ten (10) working days, NSC is deemed to
have rejected a process change, and SELLER shall continue to manufacture
for NSC hereunder using the original qualified base line process.
e) In the event of unacceptable yields and/or other reliability problems,
SELLER accepts the responsibility to implement process changes that are
acceptable to NSC (and approved by NSC), and believed by NSC and SELLER to
be able to remedy the unacceptable yields and/or the reliability problem.
SELLER agrees to target a 30 day maximum time to achieve the needed
changes.
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13. NSC SUGGESTIONS AND APPROVALS
In the event that NSC makes any written ECN/PCN type change suggestions to
SELLER concerning specifications, designs, drawings, features, or the like with
respect to products covered by this Agreement, SELLER will not be relieved of
any of its obligations under the Agreement unless SELLER notifies NSC in writing
that implementation of said suggestions render it impossible for SELLER to
comply with its obligations hereunder. Both PARTIES agree that any and all
change requests shall be acted upon by SELLER only if such suggested change is
in writing and cost impacts have been evaluated.
When NSC makes a written change request and such request is accepted by SELLER
in writing, such change is assumed to be a written amendment to this Agreement,
executed by both PARTIES. Any cost impact will be negotiated and agreed to by
both Parties prior to implementation of such change.
NSC's apparent approval of any specification, design, drawing, or the like
submitted by SELLER shall not relieve SELLER of any of SELLER's obligations
hereunder unless such relieved obligation has been covered by a written
amendment to this Agreement executed by both PARTIES. Such written amendment
shall include agreement on price impact, if any.
14. ACCEPTANCE
All Products delivered by SELLER, specified in Section 8, shall be inspected by
NSC within a reasonable time after delivery. If NSC has not rejected a delivered
Product lot in writing within 20 working days after receipt of the Product by an
NSC Using Location, then such lot shall be deemed to have been accepted by NSC.
NSC may, at its option, reject part or all of any shipment delivered by SELLER
under this Agreement, if both PARTIES agree that the Products fail to meet the
applicable specifications. To ensure an orderly handling of Products rejected by
NSC, NSC shall request and SELLER shall issue an RMA before Products are
returned to SELLER for credit.
All rejected Products pursuant to this section will be shipped to SELLER after
receipt of RMA by NSC, freight collect.
15. CONFIDENTIALITY
Either PARTY agrees that certain information furnished to it by the other PARTY
under this Agreement, which if furnished in writing or other tangible form and
marked as being confidential, or if orally or visually disclosed is then reduced
to writing and identified as being confidential and such writing is provided to
the receiving PARTY within thirty (30) days after such oral or visual
disclosure, shall be considered to be the Confidential Information of the
transferring PARTY. The receiving PARTY agrees that it will maintain the
Confidential Information of the transferring PARTY in strict confidence
utilizing at least the same degree of care utilized by the receiving
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PARTY to protect its own Confidential Information of similar nature and will not
reproduce the transferring PARTY's Confidential Information or disclose it to
any third party or to employees not having a need to know.
SELLER shall have the right to use the NSC Confidential information disclosed or
transferred hereunder only at its facility in lbara, Okayama, Japan, and only
for the purpose of manufacturing products of the types listed in Attachment I
for delivery only to NSC pursuant to this Agreement.
The obligations of confidence and use set forth in this Section 15 shall impose
no obligation upon the receiving PARTY with respect to any Confidential
Information which:
a) is now, or subsequently becomes generally known or available; or
b) can be shown by receiving PARTY to have been in its possession prior to
receipt of same from the transferring PARTY; or
c) is subsequently rightfully furnished to the receiving PARTY by a third
party without restriction on disclosure; or
d) is furnished by the disclosing PARTY to a third party without a
restriction on disclosure; or
e) is independently developed by the receiving PARTY provided the person or
persons developing same have not had access to the Confidential
Information of the transferring PARTY.
SELLER acknowledges that SELLER understands and agrees that it is expressly
prohibited from revealing to any third party that SELLER is conducting business
or discussions related to this Agreement, or the terms and conditions hereof,
without the prior written approval of NSC.
The obligations set forth in this Section 15 shall survive the termination of
this Agreement by two years.
All Confidential Information of a PARTY in the possession of the other PARTY
disclosed or transferred under this Agreement shall be returned within thirty
(30) days after the expiration or earlier termination of this Agreement.
16. TECHNICAL SUPPORT AND DEVELOPMENTS
NSC agrees to provide reasonable technical support at NSC's expense to SELLER,
in lbara, Japan, to assist SELLER in meeting NSC's specifications.
SELLER agrees to provide reasonable technical support at SELLER'S expense to
assist NSC on yield, reliability and packaging issues related to SELLER's
products as produced for NSC, such technical support being made available in
Cebu, Philippines and in Santa Clara, USA.
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17. INDEMNIFICATION AND LIMITATION OF LIABILITY
SELLER shall at all times indemnify and hold harmless NSC, its agents and
employees against all suits, claims, liabilities, damages, losses, costs or
other expenses, including attorneys' fees, relating to injuries or damages
alleged to have resulted from SELLER's negligence or any defective Product
supplied under this Agreement. SELLER will have no such obligation to the extent
that any such injury or damage is due solely and directly to NSC's negligence.
NSC shall at all times indemnify and hold harmless SELLER, its agents and
employees against all suits, claims, liabilities, damages, losses, costs or
other expenses, including attorneys' fees, relating to injuries or damages
alleged to have resulted from NSC's negligence or NSC's handling or selling of
any Product delivered to NSC by SELLER. NSC will have no such obligation to the
extent that any such injury or damage is due solely and directly to SELLER's
negligence.
SELLER hereby agrees to indemnify NSC against and save it harmless from all
liability, claims or demands made by any of SELLER's officers or employees
(including former officers or employees) on account of or by reason of or
growing out of the performance of this Agreement.
NSC hereby agrees to indemnify SELLER against and save it harmless from all
liability, claims or demands made by any of NSC's officers or employees
(including former officers or employees) on account of or by reason of or
growing out of the performance of this Agreement.
NSC shall not be liable to SELLER for any cancellation penalties, excluding ones
resulting from cancellation of firm order Work In Process charges, or any other
amounts to compensate SELLER for lost profits or opportunities, so long as NSC
pays for accepted Products from SELLER at the prices, in quantities and under
terms that are consistent with this Agreement.
Except as otherwise specifically provided in this Agreement, neither PARTY shall
be liable for any incidental or consequential damages arising out of said
PARTY's performance or non-performance of this Agreement.
18. INDEPENDENT CONTRACTORS
SELLER is deemed to be at all times an independent contractor for all purposes
and agrees to carry all worker's compensation and other insurance necessary
under Japanese laws and accepts exclusive liability for all payroll taxes or
contributions imposed by Japanese laws with respect to its officers and
employees.
19. NSC'S PURCHASE ORDER
The terms and conditions of NSC's purchase orders issued and released pursuant
to this Agreement shall be a part hereof. In the event there is a conflict
between the terms and conditions of NSC's purchase order and the terms and
conditions of this Agreement, the terms and conditions of this Agreement shall
prevail.
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20. FORCE MAJEURE
Neither PARTY shall be liable for any inability to comply with the provisions of
this Agreement due to causes reasonably beyond its control. These causes shall
include, but are not limited to, fire, flood, earthquake, explosion, accident,
acts of public enemy, war, labor disputes, transportation, embargoes, or
failures or delays in transportation, acts of God, acts of any government, or
any agency or department thereof or judicial action. The PARTY whose performance
is affected by such a cause shall promptly notify the other PARTY hereto of such
impossibility of performance. If such nonperformance continues in effect for
more than ninety (90) days, the other PARTY may, at its option, terminate this
Agreement without further cause or liability. Otherwise, this Agreement shall
continue in full force and effect for the remainder of its term upon cessation
of such event of force majeure.
21. ASSIGNMENT
Neither PARTY may assign its rights or obligations under this Agreement without
the prior written consent of the other PARTY and any attempted assignment will
be void.
22. TERMINATION
Either PARTY may terminate this Agreement immediately in the event that either
PARTY is the subject of a petition filed in Bankruptcy court of the United
States or Japan, whether voluntary or involuntary, if a Receiver or Trustee is
appointed for all or a substantial portion of the assets of either PARTY, or if
either PARTY makes an assignment for the benefit of its creditors.
23. PARAGRAPH TITLES
The paragraph titles herein are intended for convenience only and shall not be
construed to alter either PARTIES' obligations or rights as otherwise set forth
herein.
24. EXPORT CONTROL
Each PARTY represents and warrants to the other PARTY that unless such prior
authorization is obtained from the United States Government, such PARTY shall
not knowingly:
a) Export or re-export, directly or indirectly, any technical data (as
defined in Part 379 of the Export Administration Regulations of the United
States Department of Commerce) received from the other PARTY hereunder; or
b) Disclose such technical data for use in export or re-export directly or
indirectly, any direct product of such technical data, to any destination
or country to which the export or re-export or release of technical data
or export or said re-export of products of technical data is prohibited by
the laws or regulations of the United States. These assurances are
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furnished by each PARTY in compliance with Part 379 (Technical Data) of
the Export Administration Regulations of the United States Department of
Commerce.
25. GOVERNING LAW AND ARBITRATION
All disputes arising in connection with this Agreement shall be settled amicably
through good faith negotiations In the event no agreement can be reached, all
disputes shall be submitted to arbitration in San Jose, California before and
under the rules of the American Arbitration Association. The arbitrator's
decision shall be final, conclusive, and binding, and judgment on any
arbitration award or decision may be entered in any court of competent
jurisdiction.
The PARTIES agree that after arbitration the State of California shall have
jurisdiction to determine the validity, construction and performance of this
Agreement and the legal relations between the PARTIES. All disputes are subject
to venue of the State (Santa Clara County) and Federal (Northern District of
California) courts in California, and the PARTIES consent to the personal and
exclusive jurisdiction and venue of those courts.
26. BINDING, EFFECT
This Agreement shall inure to the benefit of and be binding upon the PARTIES
hereto and their subsidiaries, successors and assigns.
27. ENTIRE AGREEMENT
This Agreement, including all other documents incorporated by reference and
those attached hereto as Attachments, expresses the entire understanding of the
PARTIES hereto and cancels and supersedes any previous agreements,
understandings or representations between the PARTIES relating to the subject
matter hereof. This Agreement may not be modified except in a writing signed by
an authorized officer or representative of each PARTY.
28. SEVERABILITY
If any provision of this Agreement is held invalid, the remaining provisions
shall remain valid and in force, unless such invalidity would frustrate the
purpose of this Agreement.
29. NOTICES
Any notice to be given under this Agreement shall be in writing and shall be
sent to the appropriate PARTY at the address first stated in this Agreement, or
to such other address as a PARTY may later designate in writing to the other.
Notices shall be deemed to have been adequately sent and delivered when received
by the appropriate PARTY, after having been deposited in the mail (registered or
certified), postage prepaid.
30. PUBLICITY
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Neither PARTY shall publicize or otherwise disclose the terms of this Agreement
without the prior written approval of the other PARTY, which approval shall not
be unreasonably withheld.
31. WAIVER
No failure or delay on the part of either PARTY in the exercise of any power,
right or Privilege arising hereunder shall operate as a waiver thereof, nor
shall any single or partial exercise of any such power, right or privilege
preclude other or further exercise thereof or of any other right, power or
privilege.
NATIONAL SEMICONDUCTOR TOREX SEMICONDUCTOR LTD.
CORPORATION
/s/ 3/12/92 /s/ 3.20/92
- -------------------------------------- -----------------------------------
Signature Date Signature Date
Thomas P. Welch-Director of Technology Makatsu Uchiyama-Managing Director
- -------------------------------------- -----------------------------------
Name (Printed) Title Name (Printed) Title
/s/ 3/12/92 /s/
- -------------------------------------- -----------------------------------
Approved By Date Approved By Date
R.E. Belcher-Discrete Division Hiroshi Norigo-President
- -------------------------------------- -----------------------------------
Name (Printed) Title Name (Printed) Title
LETTER OF INTENT
THIS LETTER OF INTENT is dated _______________ of August, 1991, by and between
NATIONAL SEMICONDUCTOR CORPORATION, a Delaware Corporation, having a principal
place of business at 2900 Semiconductor Drive, Santa Clara, California
95052-8090 (hereinafter "NSC") and THINK-O ELECTRIC COMPANY, a Japanese
corporation, having a principal place of business at 150 Kinoko, Ibara-City,
Okayama, 715 Japan (hereinafter "TEC"). NSC and/or TEC may be referred to herein
as a "party" or the "parties" as the case may require.
WITNESSETH:
WHEREAS, NSC and TEC have entered into preliminary discussions concerning
the creation of a business relationship between the parties; and
WHEREAS, NSC and TEC desire to record and memorialize the substance of
those discussions in order to construct a framework from which a final binding
agreement can be negotiated.
NOW, THEREFORE, in furtherance of the premises the parties hereto set
forth the following:
1. NSC shall purchase discrete semiconductor dice and/or wafers, and will
consider the purchase of other semiconductor materials and piece parts,
from TEC on a preferred supplier basis.
2. TEC shall supply such materials to NSC as a preferred customer with
special pricing and guaranteed production capacity.
3. Should TEC discrete semiconductors be successfully qualified by NSC and
should the parties agree on price, quality, delivery and other terms and
conditions of sale, then NSC shall agree to commence purchasing a minimum
of Five Thousand (5,000) wafers, or dice equivalent, per month from TEC.
Since the parties acknowledge that NSC requirements for discrete
semiconductors may increase during the two year period following the
signing of a final agreement by the parties, TEC agrees that it shall, at
NSC's request, make available to NSC up to Fifteen Thousand (15,000)
discrete semiconductor wafers per month. Depending upon TEC performance
and semiconductor market conditions, the parties agree that this schedule
can be extended and that the quantity of wafers to be
delivered thereunder can be increased up to Twenty Thousand (20,000) or
more per month.
4. The parties agree to cooperate and take all reasonable steps necessary to
resolve any problems that may arise with regard to performance, price,
quality or delivery.
5. The initial prices to NSC for TEC wafers shall be follows:
Bias
Combined Total Finished Resistor
Wafers/Month Diodes Zeners Trans. Trans. Trans.
------------ ------ ------ ------ ------ ------
4,000-9,999 $65.00 $80.00 $85.00 $95.00 $92.00
10,000 & Up $60.00 $76.00 $85.00 $95.00 $87.00
Diode and zener prices do not include front bump or back metal. Transistor
prices do not include back metal, but shall sample probing. All prices
include production masks and incidental tooling expenses. NSC shall supply
mask masters. The listed prices are also based on yields of Ninety-eight
(98%) percent for diodes and Ninty-five (95%) percent for transistors.
6. Initial deliveries by TEC shall be four (4) weeks after receipt of order.
Following deliveries will be based upon a four (4) month rolling forecast
supplied by NSC and updated monthly.
7. The parties agree to review pricing annually.
8. This Letter of Intent shall not be a binding commitment upon either party,
but shall instead serve as a basis for good faith negotiations between NSC
and TEC leading to a final binding contract. The parties agree to strive
to execute such a contract not later than September 30, 1991.
9. The final contract shall be administered on behalf of TEC by Torex
Semiconductor LTD., TEC's international operations management company.
10. Neither party shall publicize or otherwise disclose the terms of this
relationship, this Letter of Intent, or the final agreement, without the
prior written approval of the other party.
IN WITNESS WHEREOF, the parties have had this Letter of Intent
executed by their respective authorized officers on the day and date first
written above.
THINK-O ELECTRIC COMPANY NATIONAL SEMICONDUCTOR CORPORATION
By:/s/ By:/s/
--------------------------- --------------------------------
Title:___________________________ Title ________________________________
ATTACHMENT II
ELECTRICAL SPECIFICATIONS
1.0 SCOPE: This covers all diodes made by Torex Semiconductor Ltd for the
National Semiconductor Corporation Discrete facility in Cebu,
Philippines.
2.0 PAPERWORK
2.1 The paperwork sent with the run should state the device, its
revision letter, the lot number and quantity of wafers being
shipped.
2.2 The test results of wafers in the lot tested at Torex's sample test
should be included in the shipment with the run.
3.0 SAMPLING PLAN
3.1 Oxide thickness (section 4.1) should be measured on 20% of the lot
to verify it is within spec.
3.2 The Gross Visual Inspection (section 4.2) should be done on all of
the wafers in the lot.
3.3 The Fine Visual Inspection (section 4.3) should be done on 20% of
the wafers in the lot.
3.3.1 Inspect five (5) spots per wafer, five (5) die per spot. (see
Figure 1)
3.3.2 Accept/Reject Criteria
If one or more die in a spot is rejected, then the spot is
rejected.
If 3 or more spots are rejected, then the wafer is rejected.
If the total number of spots rejected exceeds the number of
wafers inspected, the lot is rejected.
4.0 VISUAL INSPECTION CRITERIA
This inspection does not include the outer 1/8 inch area from the
edge of the wafer.
4.1 Oxide Thickness
All diodes should have an oxide thickness greater then 6500
Angstroms.
4.2 Gross Visual Criteria
4.2.1 Fringing
The wafer surface should not show more then two distinct fringes of
color. This would indicate a possible overetch or passivation
problem.
4.2.2 Contamination
Foreign material, pits, voids or stains on the wafer surface is
rejectable.
4.2.3 Discoloration
Any abnormal coloration on the frontside of the wafer is rejectable.
4.2.4 Warpage
Any warpage that makes it impossible to mount the wafer on a flat
surface is rejectable.
4.2.5 Scratches
Any wafer showing a scratch that is greater then 2 inches in length
on the front of the wafer is rejectable.
4.2.6 Broken Wafers
Only whole wafer or a wafer with a piece missing from the edge of
the wafer that is less then the length of the major flat is
shippable.
4.2.7 Mixing
Wafers of different device types can not be shipped in the same
container.
4.3 Fine Visual Criteria - done at 100X magnification
4.3.1 Misalignment
The contact mask should be 100% within the 2nd mask. (see Figure 2)
75% of the contact window should be covered by metal. (see Figure 3)
4.3.3 Mask/Oxide Reject
No more then 10% of the space between the contact and the junction
can be etched away. (see Figure 4)
4.3.4 Nitride in Contact Area
No residual nitride should be left in the contact opening.
4.3.5 Pinholes
Any pinholes in the active area starting from the PCCO is
rejectable.
4.3.6 Cracks
Any cracks that touches the inner boundary of the PCCO on the die is
rejectable.
4.3.7 Other
Any area with a defect other then those defined above including
evidence of damage, improper or non-standard processing shall be
held at Torex for review with Cebu and/or SC engineering for
disposition prior to shipment.
[ CHART ]
5 spots per wafer
5 die per spot
[ FIGURES ]
Accept Accept Reject Reject
Figure 2 - METAL COVERAGE FOR 1EB; 1HB, 1LB, 1PC, 1TB
[ FIGURES ]
Accept Accept Reject
100% coverage 75% coverage Less then
coverage
FIGURE 3 - MASK/DIODES DEFECTS
PCCO [ FIGURE ] [ FIGURE ]
Contact Area
Junction
Depletion Region Defect
1.0 SCOPE: This covers all transistors made by Torex Semiconductor
Ltd for the National Semiconductor Discrete facility
in Cebu, Philippines.
2.0 PAPERWORK:
2.1 The paperwork sent with the run should state the device, its
revision letter, the HFE bin target, the lot number and the quantity
of wafers being shipped.
2.2 The sample test results of the lot should be included in the
shipment with the lot.
3.0 SAMPLING PLAN
3.1 Inspect all of the wafers in the lot for Gross and Fine defects as
defined in sections 4.1 and 4.2.
3.2 For the Fine Visual Inspection, the sampling plan
is:
5 areas per wafer, 21 die per area
Accept/Reject = 1/2
Quality level = 5% LTPD
4.0 VISUAL INSPECTION CRITERIA
This inspection does not include the outer 1/8 inch area from the
edge of the wafer.
4.1 Gross Visual Criteria - done with the unaided eye
4.1.1 Contamination
Foreign material, pits, voids or stains on the wafer surface
is rejectable.
4.1.2 Discoloration
Any abnormal coloration on the frontside of the wafer is
rejectable.
4.1.3 Warpage
Any warpage that makes it impossible to mount the wafer on a
flat surface is rejectable.
PG 2/5 - TRANSISTORS
4.1.4 Scratches
Any wafer showing a scratch that is greater then 2 inches in
length on the front of the wafer is rejectable.
4.1.5 Broken Wafers
Only whole wafer or a wafer with a piece missing from the edge
of the wafer that is less then the length of the major flat is
shippable.
4.1.6 Mixing
Wafers of different devices types can not be shipped in the
same container.
4.2 Fine Visual Criteria - done at 100X magnification
4.2.1 Oxide Rejects
4.2.1.1 The absence of oxide which allows the connection
of metal to an area not designated by design.
4.2.1.2 The contact oxide cut is not continuous or has
been reduced by more than 50% of its intended
design.
4.2.1.3 Pinholes or voids which expose silicon in the
active area of the die.
4.2.1.4 Any irregular shapes, fingers, spikes, etc on the
diffusion line which depart from the design by
more then 50% of the distance to the next
diffusion is rejectable.
4.2.1.5 Any continuous multiple spike that is
representative by a corrugated diffusion
line is rejectable.
4.2.2 Masking Rejects
4.2.2.1 More then 50% of the design contact cut is not
covered by metal and is exposing silicon.
4.2.2.2 Any fault that reduces the designed diffusion
opening by more than 50%.
4.2.2.3 Contact oxide cut criterion:
For overlay devices: Pr 21M, 22P, 23U, 25P,
42P, 43W, 47J, 49I, 65L, 66R, 75H
The edge of the contact cut must not be coincident
with the diffusion line.
For non-overlay devices: Pr 05R/S, 06F, 07U, 10K, 1If,
12R, 13N, 16J, 19T/U, 28C, 36M, 37J, 38J, 39J, 61H, 62M,
63W, 67M, 68K, 69M, 70J, 74L, 76K, 77J, 79L, 4PP, 4QJ,
5PJ, 5QL
Any masking misalignment which reduces the
distance between the contact oxide cut and the
diffusion line to less than 50% of the designed
separation is rejectable.
4.2.3 Metallization Rejects
4.2.3.1 Scratches in the metal which reduce the width
and/or length of the metal by greater then 25% of
the designed dimension is rejectable.
4.2.3.2 EQ Rings which are scratched are damaged such that
the metal is not continuous from point to point is
rejectable.
4.2.3.3 The designed separation of any two metallizations
has been reduced by more than 50%.
4.2.3.4 The narrowest pattern of metallization is reduced
by overetching/scratch by more than 25% of its
designed value.
4.2.3.5 Any evidence of peeling, blistering, or lifting of
the metal is rejectable.
4.2.3.6 Any metal misalignment such that the area of the
contact window that is exposed is equal or greater
in width than the distance between the contact cut
edge and the diffusion line.
4.2.4 Bond Pad Rejects
4.2.4.1 Any abnormal coloration of the bond pad.
4.2.4.2 Any substance on the bond pad in the form of
chemical residues, stains or other contaminants
that can not be removed by a D.I. water clean.
4.2.4.3 Metal covering less than 75% of the bond pad area
is rejectable.
4.2.4.4 Any nitride left in the bond pad is rejectable.
4.2.4.5 The bond pad is reduced to less than than 75% of
its designed area.
4.2.4.6 The bond pad is not entirely on the metal.
4.2.5 Passivation Rejects
4.2.5.1 Any passivation voids in the active metal of die
is rejectable.
4.2.5.2 Any evidence of lifting, peeling, cracked or
missing nitride is rejectable.
4.2.6 Contamination Rejects
4.2.6.1 Any foreign material that can not be removed by
chemical soneration followed by D.I. water rinse
is rejectable.
4.2.6.2 Foreign material bridging any two metal lines or
reducing the designed separation of any two
metal lines by greater than 50% is rejectable.
4.2.7 Other
4.2.7.1 Any area with a defect other then those defined
above including evidence of damage, improper or
non-standard processing shall be held by Torex for
review with Cebu and or SC engineering for
disposition prior to shipment.
PG 5/5 - TRANSISTORS
INSPECTION PATTERN
[ FIGURE ]
5 areas per wafer
21 die per area
DOCUMENTATION MANAGERS
Each party designates the persons identified below as its Documentation Manager
for the receipt and dispatch, on its behalf, of all Confidential Information
disclosed pursuant to this Agreement as follows:
FOR DISCLOSING PARTY: FOR RECIPIENT:
Attention: Attention:
- ------------------------------------ ------------------------------
- ------------------------------------ ------------------------------
- ------------------------------------ ------------------------------
- ------------------------------------ ------------------------------
Telephone: (408) 721-4062 Telephone: (0866)62-4121
Fax: (408) 732-4116 Fax: (0866) 63-1426
Each party may change its Documentation Manager upon written notice to the other
party.
Both parties shall be relieved of all obligations hereunder FIVE (5) years after
July 8, 1991.
UNDERSTOOD AND AGREED:
DISCLOSING PARTY: RECIPIENT:
NATIONAL SEMICONDUCTOR CORPORATION TOREX SEMICONDUCTOR LTD.
- ------------------------------------ ------------------------------
Signature Signature
- ------------------------------------ ------------------------------
Type of Print Name Type of Print Name
- ------------------------------------ ------------------------------
Title Title
- ------------------------------------ ------------------------------
Date Date
Return fully executed copies of this Agreement to each party's Documentation
Manager.
APPENDIX A
Items Considered To Be Confidential Under Terms Of The Foregoing Confidential
Disclosure Agreement:
SEMICONDUCTOR DESIGN, PROCESS, AND MANUFACTURING INFORMATION.
Authorized Purposes For Use Of Confidential Information Under Foregoing
Confidential Disclosure Agreement:
FOR USE BY TOPEX IN SUPPLYING SEMICONDUCTOR DICE, WAFERS, PIECE
PARTS, AND PACKAGED DEVICES TO NATIONAL.
RELIABILITY TEST CONDITIONS
15-Nov-91 Page 1 of 5
- --------------------------------------------------------------------------------
TEST TEST
DEFINITION TEST CONDITIONS
- --------------------------------------------------------------------------------
ACLV AUTOCLAVE TEMPERATURE 21 Deg C
PLASTIC PRESSURE 15 PSIG
UNITS
READOUT 0/168 Hrs
SAMPLE SIZE 100 Units
- --------------------------------------------------------------------------------
ACOL AC OP LIFE TEMPERATURE 28 Deg C
GLASS SEALS BIAS 1D & 1S: IOU = 50 ma; VR = WIV
CONDITIONS All Others: Io = 200 ma; VR =
WIV
READOUT 0/168/500/1000 Hrs
SAMPLE SIZE 100 Units
- --------------------------------------------------------------------------------
DCOL DC OP LIFE TEMPERATURE 25 Deg C
BIAS 1D & 1S: If = 150 ma
CONDITIONS DE: IF = 300 ma
All Other Glass Seals: IF =
400 ma
SOT-23: IF = 208 man/Junct; PD
= 250 mw
1T; DCOL NOT PERFORMED
READOUT 0/168/500/1000 Hrs
SAMPLE SIZE 100 Units (2 Chamber slots per
sample)
- --------------------------------------------------------------------------------
HTRB HIGH TEMP TEMPERATURE 150 Deg C
REVERSE
BIAS BIAS 80% RATED VOLTAGE
CONDITIONS
READOUT 0/168/500/1000 Hrs
SAMPLE SIZE 100 Units (2 Chamber slots per
sample)
- --------------------------------------------------------------------------------
HTS HIGH TEMP TEMPERATURE 150 Deg C (Plastic only)
STORAGE 200 Deg C (Glass seals only)
READOUT 0/168/500/100 Hrs
SAMPLE SIZE 100 Units
- --------------------------------------------------------------------------------
RELIABILITY TEST CONDITIONS
15-Nov-91 Page 2 of 5
- --------------------------------------------------------------------------------
TEST
TEST DEFINITION TEST CONDITIONS
- --------------------------------------------------------------------------------
TMCL TEMP CYCLE TEMPERATURE -40 to +150 Deg C
READOUT 0/100/200 Cyc
SAMPLE SIZE 100 Units
- --------------------------------------------------------------------------------
TMSK THERMO TEMPERATURE -55 to +125 Deg C
SHOCK
READOUT 0/100/200 Cyc
SAMPLE SIZE 100 Units
- --------------------------------------------------------------------------------
VFPL VF PULL TEMPERATURE 25 Deg C
BIAS If = 200 ma
CONDITIONS
APPLIED PULL 10 pounds
REJECT DEGRADATION = Delta VF @ 26 -
CRITERIA 100 mv
CATASTROPHIC = Delta VF g.t.
100 mv
SAMPLE SIZE DO-35 Package Only - 500 Units
- --------------------------------------------------------------------------------
THBT HUMIDITY TEMPERATURE 85 Deg C @ 85% RH
PLASTIC BIAS VR = 10 v
UNITS CONDITIONS
READOUT 0/168/500/1000 Hrs
SAMPLE SIZE 100 Units
- --------------------------------------------------------------------------------
NOTE: ON ALL REL TESTS ACCEPT ON 1; REJECT ON 2
PROPOSED TOREX DIODE QUALIFICATION
LOCATION PERFORMING REL TESTING HAS OPTION OF PERFORMING
EITHER ACOL or DCOL TEST ACCORDING TO CURRENT CAPACITY
3 DIFFERENT DIE RUNS FOR EACH PRODUCT
15-Nov-91 Page 3 of 5
- -----------------------------------------------------------------------------------------------------------------------
REL
OLD TESTS
PKG NSID CODE COMMENTS REQ'D TIME POINTS
- -----------------------------------------------------------------------------------------------------------------------
DO-35 D3 1000 1N4148 ACOL 168 hrs; 500 hrs; 1,000 hrs
DCOL 168 hrs; 500 hrs; 1,000 hrs
HTRB 168 hrs; 500 hrs; 1,000 hrs
HTS 168 hrs; 500 hrs;
TMSK 100 cyl; 500 cyl
VF PULL 500 UNITS
DO-35 D4 1100 SMALL CONTACT ACOL 168 hrs
1000 PRODUCT DCOL 168 hrs
HTRB 168 hrs
VF PULL 500 UNITS
DO-35 D5 1800 OVER-DIFFUSED ACOL 168 hrs
1000 PRODUCT DCOL 168 hrs
HTRB 168 hrs
VF PULL 500 UNITS
- -----------------------------------------------------------------------------------------------------------------------
DO-7 1D 1300 FJT 1100 ACOL 168 hrs; 500 hrs; 1,000 hrs
DCOL 168 hrs; 500 hrs; 1,000 hrs
HTRB 168 hrs; 500 hrs; 1,000 hrs
HTS 168 hrs; 500 hrs;
TMSK 100 cyl; 500 cyl
- -----------------------------------------------------------------------------------------------------------------------
DO-7 1G 1400 DO7 VERSION OF ACOL 168 hrs
1450 PRODUCT DCOL 168 hrs
HTRB 168 hrs
SOT-23 1H 1425 SOT VERSION OF DCOL 168 hrs
1450 PRODUCT HTRB 168 hrs
MMBD 1405 ACLV 168 hrs
DUAL DICE TMSK 100 cyl;
WIRE PULL
DO-35 1J 1450 FDH-400 ACOL 168 hrs
DCOL 168 hrs
HTRB 168 hrs
VF PULL 500 UNITS
DO-35 1V 1460 HIGH VOLTAGE ACOL 168 hrs; 500 hrs; 1,000 hrs
VERSION OF DCOL 168 hrs; 500 hrs; 1,000 hrs
1450 PRODUCT HTRB 168 hrs; 500 hrs; 1,000 hrs
- -----------------------------------------------------------------------------------------------------------------------
- -----------------------------------------------------------------------------------------------------------------------
HTS 168 hrs; 500 hrs;
TMSK 100 cycl; 500 cyl
VF PULL 500 UNITS
- -----------------------------------------------------------------------------------------------------------------------
PROPOSED TOREX DIODE QUALIFICATION
LOCATION PERFORMING REL TESTING HAS OPTION OF PERFORMING
EITHER ACOL or DCOL TEST ACCORDING TO CURRENT CAPACITY
3 DIFFERENT DIE RUNS FOR EACH PRODUCT
15-Nov-91 Page 4 of 5
- -----------------------------------------------------------------------------------------------------------------------
REL
OLD TESTS
PKG NSID CODE COMMENTS REQ'D TIME POINTS
- -----------------------------------------------------------------------------------------------------------------------
DO-7 1K 1500 DO 7 VERSION OF ACOL 168 Hrs
1550 PRODUCT DCOL 168 Hrs
HTRB 168 Hrs
SOT-23 1L 1525 SOT VERSION OF ACOL 168 hrs
1550 PRODUCT DCOL 168 hrs
MMBD 1505 HTRB 168 hrs
DUAL DICE TMSK 100 cyl;
WIRE PULL
DO-35 1M 1550 HIGH VOLTAGE ACOL 168 hrs; 500hrs; 1,000 hrs
VERSION OF DCOL 168 hrs; 500 hrs; 1,000 hrs
1550 PRODUCT HTRB 168 hrs; 500 hrs; 1,000 hrs
HTS 168 hrs; 500 hrs;
TMSK 100 cyl; 500 cyl
VF PULL 500 UNITS
- -----------------------------------------------------------------------------------------------------------------------
DO-7 1N 1600 DO7 VERSION OF ACOL 168 hrs
1625 PRODUCT DCOL 168 hrs
HTRB 168 hrs
SOT-23 1P 1625 MMBD 1205 DCOL 168 hrs 500 hrs; 1,000 hrs
DUAL DICE HTRB 168 hrs; 500 hrs; 1,000 hrs
HTS 168 hrs; 500 hrs; 1,000 hrs
ACLV 168 hrs
TMSK 100 cyl; 500 cyl
85/85 1000 hrs
WIRE PULL
DO-35 Ir 1650 DO35 VERSION OF ACOL 168 hrs
1625 PRODUCT DCOL 168 hrs
HTRB 168 hrs
VF PULL 500 UNITS
DO-35 IrB 1650 DELCO 1650 ACOL 168 hrs; 500 hrs; 1,000 hrs
FDH-9550 DCOL 168 hrs; 500 hrs; 1,000 hrs
HTRB 168 hrs; 500 hrs; 1,000 hrs
HTS 168 hrs; 500 hrs;
TMSK 100 cyl; 500 cyl
VF PULL 500 UNITS
- -----------------------------------------------------------------------------------------------------------------------
PROPOSED TOREX DIODE QUALIFICATION
LOCATION PERFORMING REL TESTING HAS OPTION OF PERFORMING
EITHER ACOL or DCOL TEST ACCORDING TO CURRENT CAPACITY
3 DIFFERENT DIE RUNS FOR EACH PRODUCT
15-Nov-91 Page 5 of 5
- -----------------------------------------------------------------------------------------------------------------------
REL
OLD TESTS
PKG NSID CODE COMMENTS REQ'D TIME POINTS
- -----------------------------------------------------------------------------------------------------------------------
DO-7 1S 1700 FD 700 ACOL 168 hrs; 500 hrs; 1,000 hrs
DCOL 168 hrs; 500 hrs; 1,000 hrs
HTRB 168 hrs; 500 hrs; 1,000 hrs
HTS 168 hrs; 500 hrs;
TMSK 100 cyl; 500 cyl
SOT-23 1T 1725 SOT VERSION OF DCOL 168 Hrs
1700 PRODUCT HTRB 168 Hrs
MMBD 1705 ACLV 168 Hrs
DUAL DICE TMSK 100 cyl;
WIRE PULL
- -----------------------------------------------------------------------------------------------------------------------
NOTE: ON ALL REL TESTS ACCEPT ON 1; REJECT ON 2
ATTACHMENT V
PACKING SPECIFICATION
PACKING SPECIFICATION
PURPOSE: THIS SPECIFICATION APPLIES TO ALL 4 INCH WAFER PACKING.
SCOPE: THIS COVERS ALL DIODE AND TRANSISTOR FINISHED WAFERS SHIPPED TO
NATIONAL SEMICONDUCTOR CEBU PHILIPPINES
LABEL: ALL PACKAGES SHALL CARRY THE FOLLOWING INFORMATION:
1) DEVICE (NS ID AND APPLICABLE REVISION) AND BIN TARGET
2) LOT NUMBER
3) WAFER QUANTITY
4) MANUFACTURED BY
PACKING: 1) TO ENSURE NO DAMAGE DURING TRANSPORTATION, THE PACKING METHOD
IS DONE PER THE DIAGRAM BELOW:
_______________ SPONGE
_______________ PAPER
_______________ WAFER
_______________ PAPER
[ FIGURE ] [ FIGURE ]
2) FOR TRANSISTORS, THE WAFERS ARE TO BE PACKED IN NUMERICAL ORDER.
3) WAFERS SHOULD BE PLACED IAN THE CONTAINER WITH THE FRONT OF THE WAFER
FACING UP.
4) THE LID OF THE CONTAINER MUST OF A TYPE THAT WILL STAY ON THE CONTAINER
WITHOUT TAPE.
January 14, 1992
To: Richard Hung
From: Maureen Feltz
Subject: Torex/NSC Contract Proposal
Ammendments:
1) Item #3 Term
"The term of this Agreement shall be effective...continued thereafter for
5 years,...
2) Item #4 Price and Payment
(rewrite pricing paragraph)
SELLER shall sell the products listed in Attachment 1 (refer to letter of
intent) at the prices specified therein.
Objective: Pricing shall remain fixed for 5 years, the duration of this
Agreement.
Latitude: Pricing shall remain fixed for te first 2 years and for the
remaining 3 years if the SELLER warrants a price increase, the price increase is
to be no grater than "x"% of the current price for the duration of the
Agreement.
NSC and Torex agree to payment terms; DA20.
3) Item #5 Quantities
(*Tom Welch to define minimum electrical yield for diodes and transistors
that will be guaranteed under this contract. In addition Tom will be responsible
for enclosing all inspection documents needed by Torex, ie. Clause for narrow
bata distribution.)
4) Item #7 Scheduling
"One week prior to the first day of each NSC fiscal accounting period, NSC
shall provide SELLER with a 4 period rolling forecast per NSC Fiscal year
calendar (attached) on a period basis, in writing the first 5 weeks of which
will be given on a firm weekly requirement basis. SELLER shall confirm
acceptance of the forecast within 3 working days of receipt."
(eliminate next paragraph, "NSC may without cost or liability... as
liability is addressed under item #17 Indemnification and Limitation of
Liability)
5) Item #8 Leatimes
(rewrite)
"SELLER guarantees that leadtime on new orders shall not exceed 4 weeks
ex-factory for initial order.
6) Item #12e Process Changes
(add)
"If after 30 days the problems cannot be resolved by the SELLER, the
SELLER is to alert NSC immediately and the situation is to receive the full
attention of both parties until mutually resolved."
7) Item #13 NSC Suggestions and Approvals
- See contract paragraph-
(Need suggestions from SELLER/Torex on what they are looking for and what
they don't understand with regards to the term "obligations".)
8) Item #17 Indemnification and Limitation of Liability
(rewrite paragraph #3)
"NSC shall not be liable to SELLER for any cancellation penalties,
excluding ones resulting from cancellation of 3 periods firm orders, work in
process, or any other amounts to compensate SELLER for lost profits or
opportunities, so long as NSC pays for accepted products from SELLER at the
prices, in quantities and under terms that are consistent with this Agreement.
(add)
SELLER must promise to do their best to minimize all liabilities. (See
Kyocera contract for wording)
9) At the end of the existing contract an additional paragraph will be cited
with regards to "Exchange of Personnel".
Objective: Exchange of dedicated personnel, one National employee for one
Torex employee for the duration of this 5 Year Agreement.
Notes: National employee to take up permanent residence in Japan and an
office in Torex's Japan Facility. Torex employee to take up permanent residence
in Cebu and an office in NSC's Cebu facility.
ATTACHMENT VII
EXTENSION - SECTION 15 CONFIDENTIALITY
In addition to the confidentiality agreement covered in section 15, where
both parties pledge to maintain the confidentiality of information transferred
to them, Torex will sell NSC designed products and any future derivatives of NSC
products only to NSC or its successors.
TOREX PROPOSAL - 3/11/92
ATTACHMENT VII
EXTENSION - SECTION 15 CONFIDENTIALITY
In addition to the confidentiality agreement covered in section 15, where both
parties pledge to maintain the confidentiality of information transferred to
them, Torex will sell NSC designed products and any future derivatives of NSC
products only to NSC or its successors. A derivative in this paragraph is
defined as a product in which the design is developed by or under written
instructions from NSC or its successors.
Signed : Signed:
NATIONAL SEMICONDUCTOR CORP. TOREX SEMICONDUCTOR LTD.
- ---------------------------- -----------------------------
R.E. Belcher Hiroshi Tori
Vice President & General Manager President
Discrete Division
Date: _______________________ Date: ________________________
DOCUMENTATION MANAGERS
Each party designates the persons identified below as its Documentation Manager
for the receipt and dispatch, on its behalf, of all Confidential Information
disclosed pursuant to this Agreement as follows:
FOR DISCLOSING PARTY: FOR RECIPIENT:
Attention: Attention:
TOM WELSH M/S 4-150 H. TANI
2900 SEMICONDUCTOR DRIVE TOREX SEMICONDUCTOR LTD.
P. O. BOX 58090 6833 KINOKO, IBARA-CITY
SANTA CLARA, CA 95052-8090 OKAYAMA, 715 JAPAN
Telephone: (408) 721-4062 Telephone: (0866)62-4121
Fax: (408) 732-4116 Fax: (0866) 63-1426
Each party may change its Documentation Manager upon written notice to the other
party.
Both parties shall be relieved of all obligations hereunder FIVE (5) years after
July 8, 1991.
UNDERSTOOD AND AGREED:
DISCLOSING PARTY: RECIPIENT:
NATIONAL SEMICONDUCTOR CORPORATION TOREX SEMICONDUCTOR LTD.
- ------------------------------------ ------------------------------
Signature Signature
- ------------------------------------ ------------------------------
Type of Print Name Type of Print Name
VICE PRESIDENT DISCRETE DIVISION SENIOR MANAGING DIRECTOR
- ------------------------------------ ------------------------------
Title Title
JULY 8, 1991 JULY 8, 1991
- ------------------------------------ ------------------------------
Date Date
Return fully executed copies of this Agreement to each party's Documentation
Manager.
APPENDIX A
Items Considered To Be Confidential Under Terms Of The Foregoing Confidential
Disclosure Agreement:
SEMICONDUCTOR DESIGN, PROCESS, AND MANUFACTURING INFORMATION.
Authorized Purposes For Use Of Confidential Information Under Foregoing
Confidential Disclosure Agreement:
FOR USE BY TOPEX IN SUPPLYING SEMICONDUCTOR DICE, WAFERS, PIECE
PARTS, AND PACKAGED DEVICES TO NATIONAL.
LETTER OF INTENT
THIS LETTER OF INTENT is dated _______________ of August, 1991, by and between
NATIONAL SEMICONDUCTOR CORPORATION, a Delaware Corporation, having a principal
place of business at 2900 Semiconductor Drive, Santa Clara, California
95052-8090 (hereinafter "NSC") and THINK-O ELECTRIC COMPANY, a Japanese
corporation, having a principal place of business at 150 Kinoko, Ibara-City,
Okayama, 715 Japan (hereinafter "TEC"). NSC and/or TEC may be referred to herein
as a "party" or the "parties" as the case may require.
WITNESSETH:
WHEREAS, NSC and TEC have entered into preliminary discussions concerning
the creation of a business relationship between the parties; and
WHEREAS, NSC and TEC desire to record and memorialize the substance of
those discussions in order to construct a framework from which a final binding
agreement can be negotiated.
NOW, THEREFORE, in furtherance of the premises the parties hereto set
forth the following:
1. NSC shall purchase discrete semiconductor dice and/or wafers, and will
consider the purchase of other semiconductor materials and piece parts,
from TEC on a preferred supplier basis.
2. TEC shall supply such materials to NSC as a preferred customer with
special pricing and guaranteed production capacity.
3. Should TEC discrete semiconductors be successfully qualified by NSC and
should the parties agree on price, quality, delivery and other terms and
conditions of sale, then NSC shall agree to commence purchasing a minimum
of Five Thousand (5,000) wafers, or dice equivalent, per month from TEC.
Since the parties acknowledge that NSC requirements for discrete
semiconductors may increase during the two year period following the
signing of a final agreement by the parties, TEC agrees that it shall, at
NSC's request, make available to NSC up to Fifteen Thousand (15,000)
discrete semiconductor wafers per month. Depending upon TEC performance
and semiconductor market conditions, the parties agree that this schedule
can be extended and that the quantity of wafers to be delivered thereunder
can be increased up to Twenty Thousand (20,000) or more per month.
4. The parties agree to cooperate and take all reasonable steps necessary to
resolve any problems that may arise with regard to performance, price,
quality or delivery.
5. The initial prices to NSC for TEC wafers shall be follows:
Bias
Combined Total Finished Resistor
Wafers/Month Diodes Zeners Trans. Trans. Trans.
------------ ------ ------ ------ ------ ------
4,000-9,999 $65.00 $80.00 $85.00 $95.00 $92.00
10,000 & Up $60.00 $76.00 $85.00 $95.00 $87.00
Diode and zener prices do not include front bump or back metal. Transistor
prices do not include back metal, but shall sample probing. All prices
include production masks and incidental tooling expenses. NSC shall supply
mask masters. The listed prices are also based on yields of Ninety-eight
(98%) percent for diodes and Ninty-five (95%) percent for transistors.
6. Initial deliveries by TEC shall be four (4) weeks after receipt of order.
Following deliveries will be based upon a four (4) month rolling forecast
supplied by NSC and updated monthly.
7. The parties agree to review pricing annually.
8. This Letter of Intent shall not be a binding commitment upon either party,
but shall instead serve as a basis for good faith negotiations between NSC
and TEC leading to a final binding contract. The parties agree to strive
to execute such a contract not later than September 30, 1991.
9. The final contract shall be administered on behalf of TEC by Torex
Semiconductor LTD., TEC's international operations management company.
10. Neither party shall publicize or otherwise disclose the terms of this
relationship, this Letter of Intent, or the final agreement, without the
prior written approval of the other party.
IN WITNESS WHEREOF, the parties have had this Letter of Intent
executed by their respective authorized officers on the day and date first
written above.
THINK-O ELECTRIC COMPANY NATIONAL SEMICONDUCTOR CORPORATION
By: By:
---------------------------- ---------------------------------------
Title:___________________________ Title______________________________________
Die Size: 10 x 10 mils Die Size: 17.5 x 17.5 mils
Diode Test Program Diode Test Program
- --------------------------------------- ---------------------------------------
Test Condition Min Max Test Condition Min Max
- --------------------------------------- ---------------------------------------
Ir Vr=22v 3.0 nA Ir Vr=130v 5 nA
- --------------------------------------- ---------------------------------------
Ir Vr=22v 20 nA Ir Vr=185v 10 nA
- --------------------------------------- ---------------------------------------
BV Ir=5uA 78 v BV Ir=5uA 205 v
- --------------------------------------- ---------------------------------------
BV Ir=100uA 103` v BV Ir= v
- --------------------------------------- ---------------------------------------
BV Ir=100uA 180 v BV Ir= V
- --------------------------------------- ---------------------------------------
Vf If=1.0uA 325 mv Vf If=10uA 430 mv
- --------------------------------------- ---------------------------------------
Vf If=10uA 420 mv Vf If= mv
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
Date Rev Comment Date Rev Comment
- --------------------------------------- ---------------------------------------
1/22/92 A Issue E. Keiser 1/22/92 A Issue E. Keiser
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
Device: 1PC Device: IrC
Die Size: 15 x 15 mils Die Size: 15 x 15 mils
Diode Test Program Diode Test Program
- --------------------------------------- ---------------------------------------
Test Condition Min Max Test Condition Min Max
- --------------------------------------- ---------------------------------------
Ir Vr=22v 4.0 nA Ir Vr=22v nA
- --------------------------------------- ---------------------------------------
Ir Vr=22v 20 nA Ir Vr=22v 30 nA
- --------------------------------------- ---------------------------------------
Ir Ir=52v 78 40 nA Ir Ir=52v 80 nA
- --------------------------------------- ---------------------------------------
BV Ir= v BV Ir= v
- --------------------------------------- ---------------------------------------
BV Ir=100uA 103 v BV Ir=100uA 103 V
- --------------------------------------- ---------------------------------------
Vf If=1.0uA 320 mv Vf If=1.0uA 320 mv
- --------------------------------------- ---------------------------------------
Vf If=10uA 385 mv Vf If=10uA 385 mv
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
Date Rev Comment Date Rev Comment
- --------------------------------------- ---------------------------------------
1/22/92 A Issue E. Keiser 1/22/92 A Issue E. Keiser
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
Device
Die Size: 25 x 25 mils Die Size: 25 x 25 mils
- --------------------------------------- -------------------------------------
Test Condition Min Max Test Condition Min Max
- --------------------------------------- -------------------------------------
VBE 1b=10mA 1.8 v VBE 1b=10mA 1.8 v
- --------------------------------------- -------------------------------------
ICBO Vcb=60v 100 nA ICBO Vcb=60v 100 nA
- --------------------------------------- -------------------------------------
ICES Vce= nA ICES Vce= nA
- --------------------------------------- -------------------------------------
IEBO veb=10v 100 nA IEBO Veb=10v 100 nA
- --------------------------------------- -------------------------------------
BVCEO 1c=10mA 32 v BVCEO 1c=10mA v
- --------------------------------------- -------------------------------------
BVCES 1c=100uA 48 v BVCES 1c=100uA 45 v
- --------------------------------------- -------------------------------------
BVEBO 1e=10uA 13 v BVEBO 1e=10uA 13 v
- --------------------------------------- -------------------------------------
HFE 1c=100mA 5K 100K HFE 1c=100mA 60K 300K
Vce=5.0v Vce=5.0v
- --------------------------------------- -------------------------------------
- --------------------------------------- ---------------------------------------
HFE HFE HFE Order Bin HFE HFE HFE Order Bin
Rank min max Rank min max
- --------------------------------------- ---------------------------------------
A1 5K 10K -1 A1
- --------------------------------------- ---------------------------------------
A2 10K 25K A2
- --------------------------------------- ---------------------------------------
B1 25K 35K -2 B1
- --------------------------------------- ---------------------------------------
B2 35K 45K -3 B2
- --------------------------------------- ---------------------------------------
C1 45K 60K -4 C1 60K 120K -4
- --------------------------------------- ---------------------------------------
C2 60K 100K -5 C2 120K 300K -5
- --------------------------------------- ---------------------------------------
*Torex will target to Bin 5 but NS will
accept wfr with yld in Bin 4 that make
the lot aver yld > S/S >80%
- --------------------------------------- ---------------------------------------
Date Rev Comment Signoff Date Rev Comment Signoff
- --------------------------------------- ---------------------------------------
1/22/92 A Issue E. Keiser 1/22/92 A Issue E. Keiser
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
[ illegible ]
- - All wafers are tested at T85, 100 spots/wafer
- - A minimum of 95% wafer yield to the BV, leakage, Vbe portion of the
specification for the target bin yield except when it is determined by
both parties that the HFE target will cause the BV distribution to fall
below the specification. An engineering plan to improve the BV
distribution for these high HFE devices will be developed and reviewed in
three periods. Along with the electrical yields in general. Examples are
as follows:
PRODUCT HFE RANK
------- --------
05S - C1, C2
12R - B2, C1, C2
16J - A2, B1, B2
38J - B1, B2, C1
66R - B2, C1
74l - B1, B2
79L - A2, B1, B2, C1
- - A minimum 80% lot average yield to the HFE bin with no wafer in the lot
having less than 40% yield to the HFE bin.
- - For HFE bin targets where the HFE range is less than 2:1 or there is a
high HFE requirement, the lot average yield for these bins is a minimum
60% with no wafer in the lot yielding less than 40%. These bins will be
identified on the test programs.
- - NSC and Torex agree to review these yields after a device has run for
three periods to see if a change to the yield accept limit is needed. The
target goal for the HFE bins is 90%.
DIODE YIELD ACCEPTANCE
All wafers are tested at T85 as follows:
- - 5 wafers/lot sampled; 100 spots/wafer
* If the yield is greater/= 93%, the lot is shipped to Cebu
* If the 1 or more wafers have less than 93%, 5 more wafers in the
lot are tested
2nd group of 5 wafers sampled; 100 spots/wafer
* If all of these wafers greater/= 93%, the lot is shipped to Cebu
* If one of more wafers yield less than 93%, the remaining wafers in
the lot are tested
Any wafer with yield less than 86% is scrapped at Think-O. Wafers with yield
between 86-93% can be shipped to Cebu as long as the total number of wafers
in this yield range does not exceed 15% of the shipment.
This is to be reviewed in 30 days from today with a target yield goal of 96% or
greater.
- ----------------------------------------- -------------------------------------
Test Condition Min Max Test Condition Min Max
- ----------------------------------------- -------------------------------------
VBE 1b=10mA 1.8 v VBE 1b=10mA 0.9 v
- ----------------------------------------- -------------------------------------
ICBO Vcb= nA ICBO Vcb= nA
- ----------------------------------------- -------------------------------------
ICES Vce=65v 100 nA ICES Vce=50v 100 nA
- ----------------------------------------- -------------------------------------
IEBO Veb=7.0v 100 nA IEBO Veb=6.3v 100 nA
- ----------------------------------------- -------------------------------------
BVCEO 1c=10mA 100 v BVCEO 1c=10mA 55 v
- ----------------------------------------- -------------------------------------
BVCES 1c=100uA 110 v BVCES 1c=100uA 110 v
- ----------------------------------------- -------------------------------------
BVEBO 1e=1.0mA 19.5 v BVEBO 1e=10uA 8.2 v
- ----------------------------------------- -------------------------------------
HFE 1c=100mA 4K 100K HFE 1c=1.0mA 150 900
Vce=5.0v Vce=5.0v
- ----------------------------------------- -------------------------------------
- --------------------------------------- ---------------------------------------
HFE HFE HFE Order Bin HFE HFE HFE Order Bin
Rank min max Rank min max
- --------------------------------------- ---------------------------------------
A1 4K 10K -1 A1
- --------------------------------------- ---------------------------------------
A2 10K 25K -2 A2 150 275 -2
- --------------------------------------- ---------------------------------------
B1 25K 35K -4 B1 275 450 -3
- --------------------------------------- ---------------------------------------
B2 35K 70K -3 B2 450 550 -4
- --------------------------------------- ---------------------------------------
C1 70K 100K -3 C1 550 650 -4
- --------------------------------------- ---------------------------------------
C2 C2 650 900 -5
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
Date Rev Comment Signoff Date Rev Comment Signoff
- --------------------------------------- ---------------------------------------
11/25/91 A Issue E. Keiser 11/22/91 A Issue E. Keiser
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
Pr 10K Bin 4 Test Spec
- ----------------------------------------- -------------------------------------
Test Condition Min Max Test Condition Min Max
- ----------------------------------------- -------------------------------------
VBE 1b=10mA 0.9 v VBE 1b=10mA 0.9 v
- ----------------------------------------- -------------------------------------
ICBO Vcb=90v 100 nA ICBO Vcb=65v 100 nA
- ----------------------------------------- -------------------------------------
ICES Vce=55v 100 nA ICES Vce=55v 100 nA
- ----------------------------------------- -------------------------------------
IEBO Veb=5.0v 100 nA IEBO Veb=5.0v 100 nA
- ----------------------------------------- -------------------------------------
BVCEO 1c=10mA 50 v BVCEO 1c=10mA 42 v
- ----------------------------------------- -------------------------------------
BVCES 1c=100uA v BVCES 1c=100uA v
- ----------------------------------------- -------------------------------------
BVEBO 1e=10uA 7.0 v BVEBO 1e=10uA 7.0 v
- ----------------------------------------- -------------------------------------
HFE 1c=10mA 110 800 HFE 1c=10mA 450 800
Vce=5.0v Vce=5.0v
- ----------------------------------------- -------------------------------------
- ----------------------------------------- -------------------------------------
- --------------------------------------- ---------------------------------------
HFE HFE HFE Order Bin HFE HFE HFE Order Bin
Rank min max Rank min max
- --------------------------------------- ---------------------------------------
A1 A1
- --------------------------------------- ---------------------------------------
A2 110 180 -2 A2
- --------------------------------------- ---------------------------------------
B1 180 225 -5 B1
- --------------------------------------- ---------------------------------------
B2 225 360 -3 B2
- --------------------------------------- ---------------------------------------
C1 360 450 -3 C1
- --------------------------------------- ---------------------------------------
C2 450 800 -4 C2 450 800 -4
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
*for Bin 4, use Pr 10 Bin 4 test spec
- --------------------------------------- ---------------------------------------
Date Rev Comment Signoff Date Rev Comment Signoff
- --------------------------------------- ---------------------------------------
11/22/91 A Issue E. Keiser 1/22/92 A Issue E. Keiser
- --------------------------------------- ---------------------------------------
1/22/92 B add Bin 4 E. Keiser
test spec
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
- ----------------------------------------- -------------------------------------
Test Condition Min Max Test Condition Min Max
- ----------------------------------------- -------------------------------------
VBE 1b=10mA 0.9 v VBE 1b=10mA 0.9 v
- ----------------------------------------- -------------------------------------
ICBO Vcb=90v 100 nA ICBO Vcb= nA
- ----------------------------------------- -------------------------------------
ICES Vce=60v 100 nA ICES Vce=65v 100 nA
- ----------------------------------------- -------------------------------------
IEBO Veb=5.0v 100 nA IEBO Veb=6.0v 100 nA
- ----------------------------------------- -------------------------------------
BVCEO 1c=10mA 84 v BVCEO 1c=10mA 84 v
- ----------------------------------------- -------------------------------------
BVCES 1c=10uA 90 v BVCES 1c=10uA 160 v
- ----------------------------------------- -------------------------------------
BVEBO 1e=10uA 7.0 v BVEBO 1e=10uA 8.2 v
- ----------------------------------------- -------------------------------------
HFE 1c=10mA 110 700 HFE 1c=100mA 55 550
Vce=5.0v Vce=5.0v
- ----------------------------------------- -------------------------------------
- --------------------------------------- ---------------------------------------
HFE HFE HFE Order Bin HFE HFE HFE Order Bin
Rank min max Rank min max
- --------------------------------------- ---------------------------------------
A1 A1 55 110 -1
- --------------------------------------- ---------------------------------------
A2 110 220 -2 / -3 A2 110 150
- --------------------------------------- ---------------------------------------
B1 220 270 B1 150 200 -2
- --------------------------------------- ---------------------------------------
B2 270 350 -4 B2 200 250 -3
- --------------------------------------- ---------------------------------------
C1 350 440 C1 250 300 -4
- --------------------------------------- ---------------------------------------
C2 440 700 -5 C2 300 550
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
Date Rev Comment Signoff Date Rev Comment Signoff
- --------------------------------------- ---------------------------------------
1/22/92 A Issue E. Keiser 1/22/92 A Issue E. Keiser
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
- ----------------------------------------- -------------------------------------
Test Condition Min Max Test Condition Min Max
- ----------------------------------------- -------------------------------------
VBE 1b=10mA 0.9 v VBE 1b=10mA 0.9 v
- ----------------------------------------- -------------------------------------
ICBO Vcb= nA ICBO Vcb= nA
- ----------------------------------------- -------------------------------------
ICES Vce=45v 100 nA ICES Vce=125v 100 nA
- ----------------------------------------- -------------------------------------
IEBO Veb=5.0v 100 nA IEBO Veb=5.0v 100 nA
- ----------------------------------------- -------------------------------------
BVCEO 1c=10mA 43 v BVCEO 1c=10mA 168 v
- ----------------------------------------- -------------------------------------
BVCES 1c=10uA 80 v BVCES 1c=10uA 220 v
- ----------------------------------------- -------------------------------------
BVEBO 1e=10uA 6.5 v BVEBO 1e=10uA 6.5 v
- ----------------------------------------- -------------------------------------
HFE 1c=50mA 45 320 HFE 1c=10mA 66 250
Vce=1.0v Vce=5.0v
- ----------------------------------------- -------------------------------------
- --------------------------------------- ---------------------------------------
HFE HFE HFE Order Bin HFE HFE HFE Order Bin
Rank min max Rank min max
- --------------------------------------- ---------------------------------------
A1 45 110 -1 A1 66 90 -3
- --------------------------------------- ---------------------------------------
A2 110 120 -2 / -8 A2 90 120 -2 / -3
- --------------------------------------- ---------------------------------------
B1 120 150 -2 / -8 B1 120 225 -2 / -3 / -4
- --------------------------------------- ---------------------------------------
B2 150 190 -2 / -8 B2 225 250 -4
- --------------------------------------- ---------------------------------------
C1 190 320 -2 C1
- --------------------------------------- ---------------------------------------
C2 C2
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
Date Rev Comment Signoff Date Rev Comment Signoff
- --------------------------------------- ---------------------------------------
1/22/92 A Issue E. Keiser 1/22/92 A Issue E. Keiser
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
- ----------------------------------------- -------------------------------------
Test Condition Min Max Test Condition Min Max
- ----------------------------------------- -------------------------------------
VBE 1b=10mA 0.9 v VBE 1b=1.0mA 0.9 v
- ----------------------------------------- -------------------------------------
ICBO Vcb= nA ICBO Vcb= nA
- ----------------------------------------- -------------------------------------
ICES Vce=65v 100 nA ICES Vce=25v 100 nA
- ----------------------------------------- -------------------------------------
IEBO Veb=5.0v 100 nA IEBO Veb=4.2v 100 nA
- ----------------------------------------- -------------------------------------
BVCEO 1c=10mA 43 v BVCEO 1c=1.0mA 16 v
- ----------------------------------------- -------------------------------------
BVCES 1c=10uA v BVCES 1c=10uA 42 v
- ----------------------------------------- -------------------------------------
BVEBO 1e=10uA 6.5 v BVEBO 1e=10uA 4.8 v
- ---------------------------------------- -------------------------------------
HFE 1c=100mA 65 350 HFE 1c=10mA 50 110
Vce=10v Vce=1.0v
- ----------------------------------------- -------------------------------------
- --------------------------------------- ---------------------------------------
HFE HFE HFE Order Bin HFE HFE HFE Order Bin
Rank min max Rank min max
- --------------------------------------- ---------------------------------------
A1 65 110 -1 A1 50 110 -1
- --------------------------------------- ---------------------------------------
A2 110 150 -2 A2
- --------------------------------------- ---------------------------------------
B1 150 200 -2 B1
- --------------------------------------- ---------------------------------------
B2 200 270 -2 / -3 B2
- --------------------------------------- ---------------------------------------
C1 270 350 -3 C1
- --------------------------------------- ---------------------------------------
C2 C2
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
Date Rev Comment Signoff Date Rev Comment Signoff
- --------------------------------------- ---------------------------------------
11/25/91 A Issue E. Keiser 2/14/92 A Issue E. Keiser
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
- ----------------------------------------- -------------------------------------
Test Condition Min Max Test Condition Min Max
- ----------------------------------------- -------------------------------------
VBE 1b=10mA 0.9 v VBE 1b=10mA 0.9 v
- ----------------------------------------- -------------------------------------
ICBO Vcb= nA ICBO Vcb= nA
- ----------------------------------------- -------------------------------------
ICES Vce=25v 100 nA ICES Vce=40v 100 nA
- ----------------------------------------- -------------------------------------
IEBO Veb=4.0v 100 nA IEBO Veb=5.3v 100 nA
- ----------------------------------------- -------------------------------------
BVCEO 1c=10mA 16 v BVCEO 1c=10mA 43 v
- ----------------------------------------- -------------------------------------
BVCES 1c=10uA 42 v BVCES 1c=10uA 70 v
- ----------------------------------------- -------------------------------------
BVEBO 1e=10uA 5.2 v BVEBO 1e=10uA 6.5 v
- ----------------------------------------- -------------------------------------
HFE 1c=30mA 40 110 HFE 1c=10mA 60 450
Vce=1.0v Vce=1.0v
- ----------------------------------------- -------------------------------------
- --------------------------------------- ---------------------------------------
HFE HFE HFE Order Bin HFE HFE HFE Order Bin
Rank min max Rank min max
- --------------------------------------- ---------------------------------------
A1 40 110 -1 A1 60 110 -1
- --------------------------------------- ---------------------------------------
A2 A2 110 130 -1 / -2
- --------------------------------------- ---------------------------------------
B1 B1 130 150 -2
- --------------------------------------- ---------------------------------------
B2 B2 150 270 -2 / -3
- --------------------------------------- ---------------------------------------
C1 C1 270 380 -3 / -8
- --------------------------------------- ---------------------------------------
C2 C2 380 450 -8
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
Date Rev Comment Signoff Date Rev Comment Signoff
- --------------------------------------- ---------------------------------------
2/14/92 A Issue E. Keiser 1/22/92 A Issue E. Keiser
- --------------------------------------- ---------------------------------------
2/14/92 B Add Bin 8 E. Keiser
target, C2
HFE rank;
change HFE
max to 450
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
Device: 25P / C3025 Device: 75S / C3037
Die Size: 29 x 28 mils Die Size: 31 x 31 mils
- ----------------------------------------- -------------------------------------
Test Condition Min Max Test Condition Min Max
- ----------------------------------------- -------------------------------------
VBE 1b=10mA 0.9 v VBE 1b=10mA 0.9 v
- ----------------------------------------- -------------------------------------
ICBO Vcb= nA ICBO Vcb= nA
- ----------------------------------------- -------------------------------------
ICES Vce=40v 100 nA ICES Vce=45v 100 nA
- ----------------------------------------- -------------------------------------
IEBO Veb=4.5v 100 nA IEBO Veb=4.5v 100 nA
- ----------------------------------------- -------------------------------------
BVCEO 1c=10mA 52 v BVCEO 1c=10mA 32 v
- ----------------------------------------- -------------------------------------
BVCES 1c=10uA 83 v BVCES 1c=10uA 73 v
- ----------------------------------------- -------------------------------------
BVEBO 1e=10uA 6.5 v BVEBO 1e=10uA 6.5 v
- ----------------------------------------- -------------------------------------
HFE 1c=100mA 66 135 HFE 1c=100mA 90 315
Vce=1.0v Vce=1.0v
- ----------------------------------------- -------------------------------------
- --------------------------------------- ---------------------------------------
HFE HFE HFE Order Bin HFE HFE HFE Order Bin
Rank min max Rank min max
- --------------------------------------- ---------------------------------------
A1 66 135 -1 A1 90 110 -2
- --------------------------------------- ---------------------------------------
A2 A2 110 130 -2 / -4
- --------------------------------------- ---------------------------------------
B1 B1 130 180 -2 / -4
- --------------------------------------- ---------------------------------------
B2 B2 180 220 -2 / -3/ -4
- --------------------------------------- ---------------------------------------
C1 C1 220 270 -2/ -3/ -4
- --------------------------------------- ---------------------------------------
C2 C2 270 315 -4
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
Date Rev Comment Signoff Date Rev Comment Signoff
- --------------------------------------- ---------------------------------------
1/22/92 A Issue E. Keiser 1/22/92 A Issue E. Keiser
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
Device: 38J / D3038 Device: 39J / D3039
Die Size: 31 x 31 mils Die Size: 31 x 31 mils
- ----------------------------------------- -------------------------------------
Test Condition Min Max Test Condition Min Max
- ----------------------------------------- -------------------------------------
VBE 1b=10mA 0.9 v VBE 1b=10mA 0.9 v
- ----------------------------------------- -------------------------------------
ICBO Vcb= nA ICBO Vcb= nA
- ----------------------------------------- -------------------------------------
ICES Vce=55v 100 nA ICES Vce=63v 100 nA
- ----------------------------------------- -------------------------------------
IEBO Veb=6.3v 100 nA IEBO Veb=6.3v 100 nA
- ----------------------------------------- -------------------------------------
BVCEO 1c=10mA 60 v BVCEO 1c=10mA 84 v
- ----------------------------------------- -------------------------------------
BVCES 1c=10uA 93 v BVCES 1c=10uA 94 v
- ----------------------------------------- -------------------------------------
BVEBO 1e=10uA 7.2 v BVEBO 1e=10uA 8.4 v
- ----------------------------------------- -------------------------------------
HFE 1c=100mA 55 540 HFE 1c=100mA 50 450
Vce=1.0v Vce=1.0v
- ----------------------------------------- -------------------------------------
- --------------------------------------- ---------------------------------------
HFE HFE HFE Order Bin HFE HFE HFE Order Bin
Rank min max Rank min max
- --------------------------------------- ---------------------------------------
A1 55 110 -1 A1 50 90 -1 / -2
- --------------------------------------- ---------------------------------------
A2 110 170 -2 / -4 A2 90 150 -1 / -2
- --------------------------------------- ---------------------------------------
B1 170 270 -2/ -3/ -4 B1 150 225 -2/ -3/ -4
- --------------------------------------- ---------------------------------------
B2 270 360 -3/ -4/ -5 B2 225 250 -3/ -4/ -5
- --------------------------------------- ---------------------------------------
C1 360 540 -5 C1 250 350 -4/ -5
- --------------------------------------- ---------------------------------------
C2 C2 350 450 -5
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
Date Rev Comment Signoff Date Rev Comment Signoff
- --------------------------------------- ---------------------------------------
1/22/92 A Issue E. Keiser 1/22/92 A Issue E. Keiser
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
Device: 42P / C3042 Device: 43W / C3043
Die Size: 15 x 15 mils Die Size: 13 x 15 mils
- ----------------------------------------- -------------------------------------
Test Condition Min Max Test Condition Min Max
- ----------------------------------------- -------------------------------------
VBE 1b=1.0mA 0.9 v VBE 1b=1.0mA 0.9 v
- ----------------------------------------- -------------------------------------
ICBO Vcb= nA ICBO Vcb= nA
- ----------------------------------------- -------------------------------------
ICES Vce=33v 100 nA ICES Vce=33v 100 nA
- ----------------------------------------- -------------------------------------
IEBO Veb=4.0v 100 nA IEBO Veb=3.5v 100 nA
- ----------------------------------------- -------------------------------------
BVCEO 1c=1.0mA 42 v BVCEO 1c=1.0mA 16 v
- ----------------------------------------- -------------------------------------
BVCES 1c=10uA 45 v BVCES 1c=10uA 35 v
- ----------------------------------------- -------------------------------------
BVEBO 1e=10mA 5.2 v BVEBO 1e=10uA 5.3 v
- ----------------------------------------- -------------------------------------
HFE 1c=10mA 55 220 HFE 1c=10mA 45 180
Vce=5.0v Vce=5.0v
- ----------------------------------------- -------------------------------------
- --------------------------------------- ---------------------------------------
HFE HFE HFE Order Bin HFE HFE HFE Order Bin
Rank min max Rank min max
- --------------------------------------- ---------------------------------------
A1 55 66 -1 A1 45 55 -1
- --------------------------------------- ---------------------------------------
A2 66 110 -1 A2 55 75 -1
- --------------------------------------- ---------------------------------------
B1 110 135 -2 B1 75 90 -1 / -2
- --------------------------------------- ---------------------------------------
B2 135 180 -3 / -4 B2 90 110 -2 / -3
- --------------------------------------- ---------------------------------------
C1 180 220 -3 / -4 C1 110 140 -2 / -3
- --------------------------------------- ---------------------------------------
C2 C2 140 180 -3
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
Date Rev Comment Signoff Date Rev Comment Signoff
- --------------------------------------- ---------------------------------------
2/14/92 A Issue E. Keiser 2/14/92 A Issue E. Keiser
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
Device: ? / 03048 Device: 61H / B3061
Die Size: 28 x 28 mils Die Size: 25 x 25 mils
- ----------------------------------------- -------------------------------------
Test Condition Min Max Test Condition Min Max
- ----------------------------------------- -------------------------------------
VBE 1b=10mA 0.9 v VBE 1b=10mA 1.8 v
- ----------------------------------------- -------------------------------------
ICBO Vcb= nA ICBO Vcb= nA
- ----------------------------------------- -------------------------------------
ICES Vce=150v 100 nA ICES Vce=32v 100 nA
- ----------------------------------------- -------------------------------------
IEBO Veb=6.3v 100 nA IEBO Veb=11v 100 nA
- ----------------------------------------- -------------------------------------
BVCEO 1c=10mA 315 v BVCEO 1c=10mA 45 v
- ----------------------------------------- -------------------------------------
BVCES 1c=10uA 325 v BVCES 1c=10uA 50 v
- ----------------------------------------- -------------------------------------
BVEBO 1e=10uA 7.0 v BVEBO 1e=10uA 12.5 v
- ----------------------------------------- -------------------------------------
HFE 1c=10mA 40 150 HFE 1c=100mA 8K 190K
Vce=10v Vce=5.0v
- ----------------------------------------- -------------------------------------
- --------------------------------------- ---------------------------------------
HFE HFE HFE Order Bin HFE HFE HFE Order Bin
Rank min max Rank min max
- --------------------------------------- ---------------------------------------
A1 40 50 -1 A1 8K 12K -1
- --------------------------------------- ---------------------------------------
A2 50 80 -1 / -2 A2 12K 22K -1 / -2
- --------------------------------------- ---------------------------------------
B1 80 150 -2 B1 22K 52K -1 / -2
- --------------------------------------- ---------------------------------------
B2 B2 52K 77K -2 / -3
- --------------------------------------- ---------------------------------------
C1 C1 77K 100K -3 / -4
- --------------------------------------- ---------------------------------------
C2 C2 100K 190K -4 / -5
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
Date Rev Comment Signoff Date Rev Comment Signoff
- --------------------------------------- ---------------------------------------
11/25/91 A Issue E. Keiser 1/22/92 A Issue E. Keiser
- --------------------------------------- ---------------------------------------
2/14/92 B Redefined
HFE ranks,
new bins
added;
changed
BVCEO to
min 45v,
BVCES to
min 45v
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
Device: 62M / A3062 Device: 63W / A3063
Die Size: 18 x 18 mils Die Size: 19 x 19 mils
- ----------------------------------------- -------------------------------------
Test Condition Min Max Test Condition Min Max
- ----------------------------------------- -------------------------------------
VBE 1b=10mA 0.9 v VBE 1b=10mA 0.9 v
- ----------------------------------------- -------------------------------------
ICBO Vcb= nA ICBO Vcb= nA
- ----------------------------------------- -------------------------------------
ICES Vce=45v 100 nA ICES Vce=45v 100 nA
- ----------------------------------------- -------------------------------------
IEBO Veb=6.5v 100 nA IEBO Veb=5.0v 100 nA
- ----------------------------------------- -------------------------------------
BVCEO 1c=1.0mA 65 v BVCEO 1c=10mA 64 v
- ----------------------------------------- -------------------------------------
BVCES 1c=10uA 80 v BVCES 1c=10uA 70 v
- ----------------------------------------- -------------------------------------
BVEBO 1e=10uA 8.2 v BVEBO 1e=10uA 6.3 v
- ----------------------------------------- -------------------------------------
HFE 1c=1.0mA 110 800 HFE 1c=150mA 65 330
Vce=5.0v Vce=10v
- ----------------------------------------- -------------------------------------
- --------------------------------------- ---------------------------------------
HFE HFE HFE Order Bin HFE HFE HFE Order Bin
Rank min max Rank min max
- --------------------------------------- ---------------------------------------
A1 110 150 -2 A1 65 110 -1
- --------------------------------------- ---------------------------------------
A2 150 225 -2 / -3 A2 110 130 -2
- --------------------------------------- ---------------------------------------
B1 225 300 -2 / -3 B1 130 170 -2 / -3
- --------------------------------------- ---------------------------------------
B2 300 450 -4 B2 170 270 -2 / -3
- --------------------------------------- ---------------------------------------
C1 450 600 -4 C1 270 330 -3
- --------------------------------------- ---------------------------------------
C2 600 800 -5 C2
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
Date Rev Comment Signoff Date Rev Comment Signoff
- --------------------------------------- ---------------------------------------
1/22/92 A Changed E. Keiser 1/22/92 A Issue E. Keiser
Veb=6.3v,
HFE rank
limits
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
Device: 66R / A3066 Device 67M / B3067
Die Size: 22 x 13 mils Die Size: 30 x 30 mils
- ----------------------------------------- -------------------------------------
Test Condition Min Max Test Condition Min Max
- ----------------------------------------- -------------------------------------
VBE 1b=10mA 0.9 v VBE 1b=10mA 0.9 v
- ----------------------------------------- -------------------------------------
ICBO Vcb= nA ICBO Vcb= nA
- ----------------------------------------- -------------------------------------
ICES Vce=40v 100 nA ICES Vce=60v 100 nA
- ----------------------------------------- -------------------------------------
IEBO Veb=5.0v 100 nA IEBO Veb=6.3v 100 nA
- ----------------------------------------- -------------------------------------
BVCEO 1c=10mA 43 v BVCEO 1c=10mA 84 v
- ----------------------------------------- -------------------------------------
BVCES 1c=10uA 50 v BVCES 1c=10uA 90 v
- ----------------------------------------- -------------------------------------
BVEBO 1e=10uA 6.3 v BVEBO 1e=10uA 7.2 v
- ----------------------------------------- -------------------------------------
HFE 1c=10mA 66 380 HFE 1c=100mA 50 550
Vce=1.0v Vce=5.0v
- ----------------------------------------- -------------------------------------
- --------------------------------------- ---------------------------------------
HFE HFE HFE Order Bin HFE HFE HFE Order Bin
Rank min max Rank min max
- --------------------------------------- ---------------------------------------
A1 66 110 -1 A1 50 110 -1
- --------------------------------------- ---------------------------------------
A2 110 130 -1 A2 110 150 -2
- --------------------------------------- ---------------------------------------
B1 130 150 -2 B1 150 200 -2
- --------------------------------------- ---------------------------------------
B2 150 270 -2 / -3 B2 200 240 -2
- --------------------------------------- ---------------------------------------
C1 270 380 -3 C1 240 270 -2 / -3
- --------------------------------------- ---------------------------------------
C2 C2 270 550 -3
- --------------------------------------- ---------------------------------------
*For Bin 3 only, the acceptable min lot
average yield is 60% with no wafer
yielding less than 40%
- --------------------------------------- ---------------------------------------
Date Rev Comment Signoff Date Rev Comment Signoff
- --------------------------------------- ---------------------------------------
11/25/91 A Issue E. Keiser 1/22/91 A Issue E. Keiser
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
Device: 68 K / A3068 Device 68K/ A3068
Die Size: 20 x 20 mils Die Size: 20 x 20 mils
Pr 68 Bin 4
- ----------------------------------------- -------------------------------------
Test Condition Min Max Test Condition Min Max
- ----------------------------------------- -------------------------------------
VBE 1b=10mA 0.9 v VBE 1b=10mA 0.9 v
- ----------------------------------------- -------------------------------------
ICBO Vcb= nA ICBO Vcb= nA
- ----------------------------------------- -------------------------------------
ICES Vce=45v 100 nA ICES Vce=45v 100 nA
- ----------------------------------------- -------------------------------------
IEBO Veb=5.0v 100 nA IEBO Veb=5.0v 100 nA
- ----------------------------------------- -------------------------------------
BVCEO 1c=10mA 48 v BVCEO 1c=10mA 42 v
- ----------------------------------------- -------------------------------------
BVCES 1c=10uA 50 v BVCES 1c=10uA 50 v
- ----------------------------------------- -------------------------------------
BVEBO 1e=10uA 7.0 v BVEBO 1e=10uA 7.0 v
- ----------------------------------------- -------------------------------------
HFE 1c=10mA 110 800 HFE 1c=10mA 450 800
Vce=5.0v Vce=5.0v
- ----------------------------------------- -------------------------------------
- ----------------------------------------- -------------------------------------
- --------------------------------------- ---------------------------------------
HFE HFE HFE Order Bin HFE HFE HFE Order Bin
Rank min max Rank min max
- --------------------------------------- ---------------------------------------
A1 A1
- --------------------------------------- ---------------------------------------
A2 110 225 -2 A2
- --------------------------------------- ---------------------------------------
B1 225 300 -3 B1
- --------------------------------------- ---------------------------------------
B2 300 450 -3 B2
- --------------------------------------- ---------------------------------------
C1 450 600 -5 C1
- --------------------------------------- ---------------------------------------
C2 600 800 -4 C2 450 800 -4
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
Date Rev Comment Signoff Date Rev Comment Signoff
- --------------------------------------- ---------------------------------------
11/25/91 A Issue E. Keiser 1/22/91 A Issue E. Keiser
- --------------------------------------- ---------------------------------------
1/22/92 B Add Bin 4 E. Keiser
spec,
change C2
HFE to 800
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
Device: 74L / A3074 Device: 76J / B3076
Die Size: 19 x 19 mils Die Size: 33 x 27 mils
- ----------------------------------------- -------------------------------------
Test Condition Min Max Test Condition Min Max
- ----------------------------------------- -------------------------------------
VBE 1b=10mA 0.9 v VBE 1b=10mA 0.9 v
- ----------------------------------------- -------------------------------------
ICBO Vcb= nA ICBO Vcb= nA
- ----------------------------------------- -------------------------------------
ICES Vce=75v 100 nA ICES Vce=150v 100 nA
- ----------------------------------------- -------------------------------------
IEBO Veb=5.0v 100 nA IEBO Veb=6.3v 100 nA
- ----------------------------------------- -------------------------------------
BVCEO 1c=10mA 170 v BVCEO 1c=10mA 315 v
- ----------------------------------------- -------------------------------------
BVCES 1c=10uA 180 v BVCES 1c=10uA 315 v
- ----------------------------------------- -------------------------------------
BVEBO 1e=10mA 7.2 v BVEBO 1e=10uA 7.8 10 v
- ----------------------------------------- -------------------------------------
HFE 1c=10mA 45 180 HFE 1c=10mA 43 250
Vce=10v Vce=10v
- ----------------------------------------- -------------------------------------
- ----------------------------------------- -------------------------------------
- --------------------------------------- ---------------------------------------
HFE HFE HFE Order Bin HFE HFE HFE Order Bin
Rank min max Rank min max
- --------------------------------------- ---------------------------------------
A1 45 65 -1 A1 43 50 -1
- --------------------------------------- ---------------------------------------
A2 65 80 -1 / -2 A2 50 85 -1 / -2
- --------------------------------------- ---------------------------------------
B1 80 130 -1 / -2 B1 85 100 -2
- --------------------------------------- ---------------------------------------
B2 130 180 -1 / -2 B2 100 150 -2 / -3
- --------------------------------------- ---------------------------------------
C1 C1 150 200 -3
- --------------------------------------- ---------------------------------------
C2 C2 200 250 -3
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
Date Rev Comment Signoff Date Rev Comment Signoff
- --------------------------------------- ---------------------------------------
1/22/92 A Issue E. Keiser 1/22/92 A Issue E. Keiser
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
Device: 77J / A3077 Device: 78J / B_______
Die Size: 31 x 31 mils Die Size: 31 x 31 mils
- ----------------------------------------- -------------------------------------
Test Condition Min Max Test Condition Min Max
- ----------------------------------------- -------------------------------------
VBE 1b=10mA 0.9 v VBE 1b=10mA 0.9 v
- ----------------------------------------- -------------------------------------
ICBO Vcb= nA ICBO Vcb= nA
- ----------------------------------------- -------------------------------------
ICES Vce=30v 100 nA ICES Vce=50v 100 nA
- ----------------------------------------- -------------------------------------
IEBO Vce=4.5v 100 nA IEBO Veb=6.3v 100 nA
- ----------------------------------------- -------------------------------------
BVCEO 1c=10mA 35 v BVCEO 1c=10mA 63 v
- ----------------------------------------- -------------------------------------
BVCES 1c=10uA 50 v BVCES 1c=10uA 70 v
- ----------------------------------------- -------------------------------------
BVEBO 1e=10uA 6.3 v BVEBO 1e=10uA 7.0 v
- ----------------------------------------- -------------------------------------
HFE 1c=100mA 55 350 HFE 1c=100mA 55 400
Vce=1.0v Vce=1.0v
- ----------------------------------------- -------------------------------------
- ----------------------------------------- -------------------------------------
- --------------------------------------- ---------------------------------------
HFE HFE HFE Order Bin HFE HFE HFE Order Bin
Rank min max Rank min max
- --------------------------------------- ---------------------------------------
A1 55 110 -1 A1 55 110 -1
- --------------------------------------- ---------------------------------------
A2 110 150 -1 / -2 A2 110 150 -1
- --------------------------------------- ---------------------------------------
B1 150 200 -2 B1 150 200 -2 / -3
- --------------------------------------- ---------------------------------------
B2 200 250 -2 / -3 B2 200 250 -2/ -3
- --------------------------------------- ---------------------------------------
C1 250 300 -3 C1 250 300 -3 / -4
- --------------------------------------- ---------------------------------------
C2 300 350 -3 C2 300 400 -4
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
Date Rev Comment Signoff Date Rev Comment Signoff
- --------------------------------------- ---------------------------------------
1/22/92 A Issue E. Keiser 1/22/92 A Issue E. Keiser
- --------------------------------------- ---------------------------------------
2/14/9_ B Changed max E. Keiser
HFE to 400
Added Bin 4
- --------------------------------------- ---------------------------------------
- --------------------------------------- ---------------------------------------
- -----------------------------------------
Test Condition Min Max
- -----------------------------------------
VBE 1b=10mA 0.9 v
- -----------------------------------------
ICBO Vcb=80v 100 nA
- -----------------------------------------
ICES Vce= nA
- -----------------------------------------
IEBO Veb=5.2v 100 nA
- -----------------------------------------
BVCEO 1c=10mA 128 v
- -----------------------------------------
BVCES 1c=10uA 130 v
- -----------------------------------------
BVEBO 1e=10uA 7.0 v
- -----------------------------------------
HFE 1c=100mA 55 250
Vce=1.0v
- -----------------------------------------
- -----------------------------------------
- ---------------------------------------
HFE HFE HFE Order Bin
Rank min max
- ---------------------------------------
A1 50 80 -1
- ---------------------------------------
A2 80 120 -1 / -2 / -3
- ---------------------------------------
B1 120 160 -1/ -2 / -3
- ---------------------------------------
B2 160 200 -3
- ---------------------------------------
C1 200 250 -3
- ---------------------------------------
C2
- ---------------------------------------
- ---------------------------------------
Date Rev Comment Signoff
- ---------------------------------------
11/22/92 A Issue E. Keiser
- ---------------------------------------
- ---------------------------------------
- ---------------------------------------
Latitude: Exchange of several dedicated NSC and Torex personnel to be in
place during the transition. (need to specify an approximate time frame)
Notes: In addition, both parties agree to hold quarterly review meetings
with dedicated personnel from both parties present and alternating meeting site.
In the event of a crisis, NSC and Torex will maintain the ability to
exchange competant personnel at each site within 48 hours to address critical
situation.
cc: Louis Yamauchi
ATTACHMENT III
BASE LINE PROCESSES
- --------------------------------------------------------------------------------
NSC DEVICE TOREX DEVICE STANDARD MAILING DATE NOTE
NUMBER
- --------------------------------------------------------------------------------
TRANSISTORS 74l A3074 APRIL 17,
1992
------------------------------------------------------------------
76J B3076 The Date is Not Yet Fixed
------------------------------------------------------------------
77J A3077 APRIL 25,
1992
------------------------------------------------------------------
78J B3078 APRIL 25,
1992
------------------------------------------------------------------
79L B3079 APRIL 25,
1992
------------------------------------------------------------------
------------------------------------------------------------------
------------------------------------------------------------------
------------------------------------------------------------------
- --------------------------------------------------------------------------------
Diodes D3D * DS76 D41002 ---
- --------------------------------------------------------------------------------
1PC DS77 The Date is Not Yet
Fixed.
------------------------------------------------------------------
IRC DS78 The Date is Not Yet
Fixed.
------------------------------------------------------------------
1MC DS79 The Date is Not Yet
Fixed.
------------------------------------------------------------------
------------------------------------------------------------------
------------------------------------------------------------------
------------------------------------------------------------------
- --------------------------------------------------------------------------------
[CHARTS]
- --------------------------------------------------------------------------------
NSC DEVICE TOREX DEVICE STANDARD MAILING DATE NOTE
NUMBER
- --------------------------------------------------------------------------------
TRANSISTORS 05R D3005H APRIL 25,
1992
------------------------------------------------------------------
05S D3005L APRIL 25,
1992
------------------------------------------------------------------
06F D3006 MARCH 19,
1992
------------------------------------------------------------------
07T C3007 The Date is Not Yet
Fixed.
------------------------------------------------------------------
10K * C3010 H40403 --
------------------------------------------------------------------
11F C3011 The Date is Not Yet
Fixed.
------------------------------------------------------------------
12R D3012 APRIL 17,
1992
------------------------------------------------------------------
13N D3013 APRIL 17,
1992
------------------------------------------------------------------
16J C3016 APRIL 17,
1992
------------------------------------------------------------------
19T C3019L H40404 MARCH 19,
1992
------------------------------------------------------------------
19U C3019H H40405 MARCH 19,
1992
------------------------------------------------------------------
21K C3021 The Date is Not Yet
Fixed.
------------------------------------------------------------------
22M C3022 The Date is Not Yet
Fixed.
------------------------------------------------------------------
23U C3023 H40406 The Date is Not Yet
Fixed.
------------------------------------------------------------------
25P C3025 The Date is Not Yet
Fixed.
------------------------------------------------------------------
37J C3037 APRIL 25,
1992
------------------------------------------------------------------
38J D3038 APRIL 17,
1992
------------------------------------------------------------------
39J D3039 APRIL 25,
1992
------------------------------------------------------------------
42P C3042 The Date is Not Yet Fixed
------------------------------------------------------------------
43W C3043 The Date is Not Yet
Fixed.
------------------------------------------------------------------
48T D3048 MARCH 19,
1992
------------------------------------------------------------------
------------------------------------------------------------------
61H B3061 APRIL 25,
1992
------------------------------------------------------------------
62M A3062 APRIL 25,
1992
------------------------------------------------------------------
63W A3063 H40003 MARCH 19,
1992
------------------------------------------------------------------
66R A3066 H40004 MARCH 19,
1992
------------------------------------------------------------------
67M B3067 APRIL 25,
1992
------------------------------------------------------------------
68K* A3068 H40005 --
- --------------------------------------------------------------------------------
ATTACHMENT IV
QUALIFICATION REQUIREMENTS
AND
QUALITY LEVEL REQUIREMENTS
CONFIDENTIAL DISCLOSURE AGREEMENT
National Semiconductor Corporation, with a principal place of business at 2900
Semiconductor Drive, Santa Clara, CA, ("Disclosing Party") and TOREX
SEMICONDUCTOR LTD. with a principal place of business at 6833 Kinoko,
Ibara-City, Okayama 715 Japan , ("Recipient"), mutually agree that certain
confidential information of the Disclosing Party, relating to items described on
Appendix A, which if furnished by the Disclosing Party to Recipient in written
or other tangible form is clearly marked as being confidential or if orally or
visually furnished, is identified as being confidential in a writing submitted
to the Recipient within thirty (30) days after such oral or visual disclosure
shall be considered by the Recipient to be the Confidential Information of the
Disclosing Party.
Recipient agrees to maintain the Confidential Information of the Disclosing
party received hereunder in confidence utilizing the same degree of care the
Recipient uses to protect its own confidential information of a similar nature
and to not disclose such information to any third party or to employees of the
Recipient without a need to know.
Recipient shall use the Confidential Information received hereunder only for the
purposes designated in Appendix A.
Recipient agrees to fully comply with the United States Export Administration
Regulations, assuring the Disclosing Party that, unless prior authorization is
obtained from the United States Office of Export Administration, Recipient does
not intend to and shall not knowingly export or re-export, directly or
indirectly, any Confidential Information received hereunder or any product
thereof in contradiction of current Export Administration Regulations published
by the United States Department of Commerce. The obligations under this
paragraph shall survive any termination of this Agreement.
This Agreement shall impose no obligation upon the Recipient with respect to any
Confidential Information of the Disclosing Party which (i) is now or which
subsequently becomes generally known or available; (ii) is known to the
Recipient at the time of receipt of same from the Disclosing Party; (iii) is
provided by the Disclosing Party to a third party without restriction on
disclosure; (iv) is subsequently rightfully provided to the Recipient by a third
party without restriction on disclosure; or (v) is independently developed by
the Recipient provided the person or persons developing same have not had access
to the Confidential Information of the Disclosing Party.
All written data delivered by Disclosing Party to Recipient pursuant to this
Agreement shall be and remain the property of the Disclosing Party, and all such
written data, and any copies thereof, shall be promptly returned to the
Disclosing Party upon written request, or destroyed at the Disclosing Party's
option.
No rights or obligations other than those expressly recited herein are to be
implied from this Agreement. No license is hereby granted directly or indirectly
under any patent.