Exhibit 99.11
Header of all slides
[Logo] Microsemi
Slide 1
Managing Power - RFIC Products
Erich Volk - Product Development / Marketing RFICs
Dr. Michael Kim - RF Design and System Engineering
Slide 2
Disclaimer
. Some of the information in this presentation may contain projections or other
forward-looking statements regarding future events or the future financial
performance of Microsemi Corporation.
. We wish to caution you that these statements are only predictions and that
actual events or results may differ materially. We refer you to the documents
the company files from time to time with the Securities and Exchange
Commission, specifically, the Company's most recent Form 8-K, 10-K and Form
10-Q.
. These documents contain and identify important factors that could cause the
actual results to differ materially from those contained in our projections
or forward -looking statements.
. Amounts shown are estimates of projected revenue growth from new products.
These estimates represent the average of the range of company estimates
developed from external market research data, as well as internal company
market and product forecasts. Amounts could change due to changes in market
conditions, customer acceptance and other factors, whether known or unknown
to the company at this time. Please refer to Microsemi Safe Harbor Statement.
Slide 3
Market Strategy and Players
Power Amp - $ M 2001 2002 2003 2004 2005
- -------------------------------------- ----------- ------------ ----------- ---------------- -----------------
TAM $654 $ 959 $1,178 $1,431 $1,492
WCDMA $ 9 $ 29 $ 64 $ 102
CDMA2000 1x 1 $ 12 $ 68 $ 191 $ 327
5GHz WLAN $ 3 $ 7 $ 13 $ 21
SAM $ 1 $ 24 $ 104 $ 268 $ 450
Source: Aug 2001 Cahners Instat Group
RFIC PA Microsemi Alpha Anadigics RFMD Conexant
- -------------------------------------- ------------ ------------ -------------- ------------ ------------
WCDMA InGaP/HBT InGaP/HBT AIGaAs/HBT AIGaAs/HBT
CDMA/CDMA2000 InGaP/HBT AIGaAs/HBT InGaP/HBT AIGaAs/HBT AIGaAs/HBT
WLAN 5GHz low power InGaP/HBT
WLAN 5GHz high power InGaP/HBT
GSM AIGaAs/HBT InGaP/HBT AIGaAs/HBT AIGaAs/HBT
TDMA AIGaAs/HBT AIGaAs/HBT
RFIC PA Agilent/HP Maxim Triquint Celeritek Raytheon
- ------------------------------------ -------------- ---------- ------------ ---------------- ----------
WCDMA InGaP/HBT x
CDMA/CCDMA2000 x SiGe InGaP/HBT InGaP/HBT x
WLAN 5GHz low power x x
WLAN 5GHz high power
GSM x
TDMA SiGe InGaP/HBT InGaP/HBT
Slide 4
Microsemi Wireless RF/Fiber-Optic Engineered Solutions:
Networked Corporate Resources & Advanced Technologies
Semicon & Device Technology Leverage
InGaP/GaAs
- - HBT PAs
- - HBT TIAs
InGaAs/GaAs
- - E-Mode PHEMT LNAs
Silicon
- - CMOS DC-DC Converter
InGaAs/InP
- - PA, LNA, TIA
Product Design/Development
[picture of Building]
[picture of design engineers]
[picture of engineer with test equipment]
[picture of equipment]
[picture of equipment]
Power-Managed Multi-Function Integration
Flip-Chip Packaging
- - Au-Stud
- - LTCC
Variable Vc Bias PAs
- - DC-DC
- - Si CMOS
RFIC/Opto Products
[graphic of 2.5G-3G Power Amp, Chips & Modules]
[graphic of 5-6GHz WLAN PA, LNA, Antenna, Antenna Switch]
[graphic of 10-40Gb/s Ethernet/Sonet, Photodiode/TIA, Chips & Modules]
Wireless/Fiber-Optic Applications
[graphic of 2.5G-3G Portable]
[graphic of 5-6GHz LAN]
[graphic of Gb Ether/Sonet]
Slide 5
Microsemi Wireless RF/Fiber-Optic Engineered Solutions:
Optimum Power Amp RFIC Component Technology Path
- - Lower Noise Figure
- - Higher Gain/Bandwidth
-- LNA, PA, PHEMT (E-Mode), HBT,
- - No Drain Switch
- - Smaller Die Size
-- SiGe/Si[crossed out], AIGaAs/GaAs, InGaP/GaAs
- - Better Temp Stability
- - Greater Reliability
-- Chip-&-Wire, PA Module, Flip-chip, PA Module
- - Greater RF Performance
- - Smaller Size
- - Better RF Yield/Cost
-- Solder-Reflow Bump, Thermosonic Au-Stud Bump
- - Better Thermals
- - Smaller Size
- - Simpler Manufacturing
-- PA Chips & Modules
2G-3G Portable
5-6GHz W-LAN
Slide 6
W-CDMA/CDMA2000 HBT Power Amp Products:
Worldwide 3G Mobile Communication Service
3G Mobile Communications W-CDMA/CDMA2000 HBT Power Amp Products
Sept 2001 2002-03 2003-04
[picture of 3 mobile telephones] Korea/Europe USA
[picture of PDA] (DCMA2000-1x, W-CDMA) (CDMA2000-1xEV)
[picture of FOMA Card]
NTTDoCoMo FOMA
(Freedom Of Mobile Access)
- - - -
Introductory Phones
[graphic of PA Chips, Modules (6x6mm2=>3x3mm2)
Slide 7
Overall Power Amplifier Efficiency:
Power-Added Efficiency (PAE) Vs Quiescent Current (Icq)
Probability Distribution of CDMA Handset (IS-95)
P 3 x
r x x
o x
b 2.5 x
a x
b
i x
l 2
i
t x x
y 1.5 x
x
x
% 1 x x
x x
0.5 x
x
x x
x x
x x
0
----------------------------------------------------
-25 1.5 -5 5 15 25
. High Transmitter Power: Edge of cell, deep fading
. Low Transmitter Power: Near base station, low shadow & Rayleigh fading
Pout (dBm)
T 0.45 ox
o 0.4 ox
t 0.35 ox
a 0.3 ox
l 0.25 ox
0.2 ox
C 0.15 xo
u 0.1 xo
r x x x x x x x x x x x x x x x x x x x x x x x x x
r 0.05 o
e o
n o o o o o o o o o o o o o o o o o o
t 0
(A) --------------------------------------------------------------------------
-25 -20 -15 -10 -5 0 5 10 15 20 25 30
Pout (dBm)
x = High Icq (80mA) o = Low Icq (38mA) (MWS)
[graphic of energy compliance logo]
*30% Battery Power Saving!
Fact #1: PA with highest PAE may not be the overall most efficient PA.
Fact #2 Icq has a major impact on battery life of CDMA phones.
* more than
Slide 8
Advanced Performance-Managed Multi-Function PA Modules:
Optimizing for Combined Efficiency, Linearity, Size and Cost
Optimum "Intelligent" Performance-Managed Multi-Function, Multi-Chip Power Amp
Module
[schematic] 2-Bit Bias Control, Input Voltage (Battery), Buck DC-DC Converter,
Variable Vcc (&/or Vref) Biasing, Vcc, HBT Power Amp, RF Input, RF
Output
"Intelligent" Power Amp Module
[graphic of InGaP/GaAs]
[graphic of HBT PA RFICs]
[graphic of (2G-3G)
Intelligent Power Mangement
- - Discrete Variable Bias Region?
- - Dynamic Input Envelope Tracking?
- - PA Output Stage Switching?
[schematic] Bias Control, Input Voltage (Battery), Boost DC-DC Converter, RF
Input, Dynamic Envelope Tracking, Variable Bias, Vcc, Vref
[schematic] PA Output Stage Switching, Switch Control
Bias/Control Support Circuitry
Multi-Layer Input Matching Circuitry
Transient Voltage Suppression
Multi-Layer Output Matching Circuitry
[graphic of InGaP/GaAs]
[graphic of HBT PA RFICs]
[graphic of (2G-3G)]
Multi-Layer Low-Temp Co-Fired Ceramic (LTCC) for Chip Module Packaging
Flip-Chip Au-Stud/Au-Pad Die Attached and I/O Interconnect
[graphic of magnified au stud bump]
Slide 9
Active Bias Power Management of InGaP HBT Power Amp:
DC-DC Converter with 2-Bit (4) Bias Level (In Development)
[schematic] Input Voltage (Battery), Bias control (2-Bit+), Si Buck DC-DC
Converter (greater than 1MHz), External FET Switch, Inductor &
Filter Capacitor, Variable Vcc, Vref, HBT Power Amp, RF Input, RF
Output
Active Bias Power Amp Block Diagram
50
o
45
PAE (%) x
40
35
o
30
Vcc 1- 2V X
25
20
o
15
o
10
Vcc 0.5-1V x
5 o
x o o
0 o o o
-------------------------------------------------------------------
-10 -5 0 5 10 15 20 25 30
x = Converter o = No Converter
InGap HBT W-CDMA Power Amp 4 Level Bias PAE Performance
Slide 10
Dynamic Power Management of InGaP HBT Power Amp:
Variable 2-Bit Vcc Bias with Si DC-DC Buck Converter
W-CDMA/CDMA2000 PA with Buch Converter 4-Level Vcc Control
[schematic] RF/IF Converter and Baseband Chip Set, Bias Control (2-Bit+),
DC-DC Buck Converter (greater than 1MHz) 2-Bit+ Controlled Vcc,
Vref Bias States: Bias 1 = V Battery, Bias 2 1-2V, Bias 3 0.5-1V,
Bias 4 = 0ff, LDO, Battery Voltage (3.2-4.2V), Variable Vcc,
Variable Vref, HBT Power Amp, RF Input, RF Output
Slide 11
Flip-Chip Interconnect Via Gold Stud Bump/Gold Pad Bonding:
Thermosonic Au Stud/Au Pad Process With Wire Bond Studs
- - Gold-stud bumping and thermal vias on ceramic substrate (alumina, LTCC)
- - GaAs IC die with Au pads flip-chip aligned to Au-stud bumps
- - GaAs IC pads and substrate studs thermo-sonic welded
[schematic] GaAs Flip-Chip Die (7mils Thick) with Au Pads, Au-Stud Bump,
Ceramic Substrate (15mils Thick), Thermal Via (Silver-Filled),
Printed Circuit Board (FR4)
Schematic of Flip-Chip Assembly (75 um Diameter x 20 um Thick Studs)
[picture of GaAs IC Flip-Chip Die, Ceramic Substrate and Magnified Au Stud Bump
(75um D)
Magnified Au-Stud Flip-chip Assembly (75um diameter x 20um Thick Studs)
Slide 12
Au-Stud Flip-Chip PA Module Assembly: Performance, Size & Cost
Advantages Over Conventional Chip-&-Wire Approach
[schematic of Heat Flow] PA Module, PA RFIC + Backside Via, GaAs Substrate,
Epoxy Die Attach, Module Substrate (LTCC), + Silver-
Filled Thermal Vias, Solder Reflow, RF System PCB
Performance, Size, Cost Chip-and-Wire Au Stud-Au Pad Flip-Chip
- --------------------------- -------------------------- --------------------------------------
Module Performance - RF performance/yield limited - Optimum performance/yield
- - RF (Gain, PAE, ACPR) -- Die attach epoxy RF ground -- Thermosonic Au-Au
-- Wire bond inductance -- Repeatable low inductance
-- Limited RF isolation (vias) -- Flexible RF isolation
- - Thermal - Acceptable (4mil GaAs/Via) - 1-2X better (20um thick Au stud)
- - Mechanical - Fragile (4mil thick) - 2x thicker die
Size
- - Chip Size - Ground via limited - Same size or smaller
- - Module Size - Wire bond pad limited - 25%-30% smaller (no bond pad)
Cost
- - Chip Fab Process - Backside thinning+via+plating - 10% lower cost (no via/plating)
- - Module Fab Process - Epoxy die attach+12 bonds - Same cost (flip-chip+30studs)
- - Overall Module Cost - Chip & RF yield limited - >10% lower (chip+better RF yield)
Slide 13
InGaP/GaAs HBT PA RFIC Thermal Analysis:
Conventional Chip-&-Wire Versus Au-Stud Flip-Chip
[graphic of circuit layout]
2-D Thermal Distribution Simulation
- - 3-D software (finite-element analysis)
Tochnog (public domain ANSI-C code)
- - Thermal structure
-- Thermal conductivity ratio Au:GaAs= 6:1
-- Heat flow thickness:
-- GaAs substrate =100um; Au stud=20um
-- Heat flow area wire-bond:flip-chip ratio=20:1
- - Heat flow into infinite heat sink
Temperature (C) Distribution without Studs
1400 90
85
1200 xxxxxxx 80
xxxxxxx 75
1000 xxxxxxxx
xxxxxxxxx
800 xxxxxxxxx 70
xxxxxxxxxx 65
600 xxxxxxxxxx 60
xxxxxxxxxxx
400 xxxxxxxxxxxx 55
xxxxxxxxxx 50
200 xxxxxxxxxx 45
0 xxxxxxx 40
- ------------------------------------------
- -1500 -1000 -500 0
Chip-&-Wire
[graph of thermal distribution without Studs]
Temperature (C) Distribution with Au Studs
1400 90
85
1200 xxxxxxx 80
xxxxxxx 75
1000 xxxxxxx
xxxxxxx
800 70
xxxxxxx 65
600 xxxxxxx 60
xxxxxxx
400 55
xxxxxxx 50
200 xxxxxxx 45
0 xxxxxxx 40
- ------------------------------------------
- -1500 -1000 -500 0
Au-Stud Flip-Chip
[graph of thermal distribution with Au Studs]
Slide 14
InGaP/GaAs HBT PA RFIC Au-Stud Flip-Chip Thermal Analysis:
3-D Thermal Distribution Simulation
3-D Thermal Distribution Simulation
- - 3-D software (finite-element analysis)
Tochnog (public domain ANSI-C code)
- - Thermal structure
-- Thermal conductivity ratio Au:GaAs = 6:1
-- Heat flow thickness:
GaAs substrate =100um; Au stud =20um
-- Heat flow area wire-bond:
Flip-chip ratio = 20:1
- - Heat flow into infinite heat sink
Surface Temperature - Au-Stud Side
[graphic of 3-D thermal map]
[X Y Z axes]
[graphic of circuit layout]
[chart of color coded temperature]
Slide 15
W-CDMA InGaP HBT PA Matched Module Evolution:
6x6mm2 Chip-&-Wire to 3x3mm2 Au-Stud Flip-Chip
[graphic of 6x6mm2 Chip-&-Wire Single-Layer Alumina (PA Module Prototype)]
[graphic of 3x3mm2 Au-Stud Flip-Chip Multi-Layer LTCC (PA Module in
Development)]
Slide 16
Amplifiier and Antenna Products:
5-6GHz Wireless Portable, Access Point, Bridge Applications
2002 2002-03
[picture of Current 2.4GHz Wireless LAN Modem 5-6GHz Wireless Modem Europe (HiperLAN)
PCMCIA Card Format] - Portable Japan
- Base Access
- Bridge
USA (802.11a)
[graphic of Power Amp, LNA Printed Antenna]
5-6 GHz Wireless
HBT Power Amp, PHEMT LNA and Antenna Products
Slide 17
5-6GHz Wireless LAN Block Diagram:
Microsemi RF Front-End Product Family Solution
[schematic] Antenna Diversity Switch, Antenna 1, Antenna 2, Band Pass Filter,
TX/RX Switch, LNA, PA, RF/IF Conversion Chip(s), Low Pass Filter,
Baseband Chip Set
[picture of band pass filter]
[picture of Antenna Diversity Switch & TX/RX Switch]
[picture of LNA]
[picture of PA]
Slide 18
InGaP HBT 5.15-5.35 GHz Hybrid 3-Stage PA Evolution:
3-Chip Discrete to 2-Chip RFIC Solution
[schematic] Input 50 Ohm, Drive Amp Gain Block, Chip, SOT-23 or 1x2mm2 MLP,
P1dB=12dBm G=11dB, Inter-Stage Match, 2nd-Stage, 1-Stage PA,
Chip, SOT89 or 2x2mm2 MLP, P1dB greater than 24dBm G greater
than 12dB, Inter-Stage Match, Output Stage, 1-Stage PA, Chip,
SOT89 or 2x3mm2 MLP, P1dB~29-30dBm, G~5-6dB, Output Match, PCB:
Rogers 4350, Output, P1dB greater than 29dBm, G greater than
28dB
2nd + 3rd Stage RFIC Integration
- - Vcc=3.3V
- - Total Quiescent Current: Icq 200mA
- - P1dB 29-30dBm
- - Gain*15dB
[graphic of circuit board]