2134 patents
Page 16 of 107
Utility
Test Method
13 Apr 23
Provided is a test method comprising: preparing a plurality of groups for setting, each of which has a plurality of semiconductor devices for setting, and assigning an inspection voltage to each of the respective plurality of groups for setting; performing first testing by applying the assigned inspection voltage to the semiconductor devices for setting, and testing, at a first temperature, the plurality of semiconductor devices for setting included in each of the plurality of groups for setting; performing second testing by testing, at a second temperature different from the first temperature, a semiconductor device for setting having been determined as being non-defective and by detecting a breakdown voltage at which the semiconductor device for setting is broken; acquiring a relationship between the inspection voltage and the breakdown voltage; and setting an applied voltage used when testing a semiconductor device under test at the first temperature, based on the acquired relationship.
Shuhei TATEMICHI, Kenichi ISHII
Filed: 17 Aug 22
Utility
Semiconductor Module
13 Apr 23
A semiconductor module, including a semiconductor chip, a sealed main body portion sealing the semiconductor chip and having a pair of attachment holes penetrating therethrough, a heat dissipation plate in contact with the sealed main body portion.
Toshio DENTA
Filed: 29 Aug 22
Utility
Power Conversion Device, Magnetic Component, and Manufacturing Method of Power Conversion Device
13 Apr 23
A magnetic component in a power conversion device includes a bobbin that has a rod-shaped central portion and holds a core and a winding member.
Kou TANIGUCHI
Filed: 20 Sep 22
Utility
Resistance element and its manufacturing method
11 Apr 23
A resistance element includes a plurality of resistance chips stacked vertically, each of the plurality of resistance chips including a semiconductor substrate, one or more resistance layers on a field insulating film, a pad forming electrode on electrically connected to the one or more resistance layers, a relay wiring on the interlayer insulating film, laterally separated from the pad forming electrode, electrically connected to another end of at least one of the one or more resistance layers on one end and to a semiconductor substrate on another end, and a back surface electrode at a bottom of the semiconductor substrate, making ohmic contact with the semiconductor substrate, wherein the plurality of resistance chips have the same planar outer shape, and are stacked one over another so as to constitute a resistor as a whole.
Taichi Karino
Filed: 2 May 22
Utility
Semiconductor device
11 Apr 23
A semiconductor device includes: a semiconductor chip; a case having a frame portion that has an inner wall portion surrounding an housing area in which the semiconductor chip is disposed; a buffer member provided on at last part of the inner wall portion of the case on a side of the housing area; a low expansion member provided on said at least part of the inner wall portion with the buffer member interposed therebetween on the side of the housing area; and a sealing member that seals the housing area, wherein the buffer member has a smaller elastic modulus than the case and the sealing member, and wherein the low expansion member has a smaller linear expansion coefficient than the case and the sealing member.
Nobuhiro Higashi
Filed: 1 Apr 21
Utility
Semiconductor device
11 Apr 23
A semiconductor device, including a circuit pattern, a contact part and an external connection terminal.
Rikihiro Maruyama, Seiichi Takahashi
Filed: 26 Mar 21
Utility
Semiconductor device
11 Apr 23
A semiconductor device includes: a pad; a control circuit; a plurality of high-potential-side circuit regions having distances to the pad different from each other, each including a gate drive circuit, a SET-side level shifter, a RESET-side level shifter, and a circular wire; a SET-side wire electrically connects the pad with the SET-side level shifters; and a RESET-side wire electrically connects the pad with the RESET-side level shifters, wherein the circular wire located closer to the pad is electrically connected to the SET-side wire and the RESET-side wire via the circular wire 8u located further from the pad.
Akihiro Jonishi
Filed: 27 Dec 21
Utility
Heat sink
11 Apr 23
A heat sink includes a base plate; a cover overlapping the base plate; fins, each having a plate-like shape projecting from the base plate in a direction perpendicular to the base plate, located between the base plate and the cover; one or a plurality of first fin groups composed of a plurality of the fins arranged with a gap therebetween in a first direction; and one or a plurality of second fin groups composed of a plurality of the fins arranged with a gap therebetween in the first direction, and adjacent to the first fin group with a gap therebetween in a second direction.
Takumi Nakamura, Eiji Anzai, Tomoyuki Hirayama, Yutaka Hirano, Ryoichi Kato, Hiromichi Gohara, Kohei Yamauchi
Filed: 29 Aug 22
Utility
Power Conversion Device
6 Apr 23
This power conversion device includes an inverter, a DC-DC converter, and a flat plate-shaped base where the inverter and the DC-DC converter are disposed on the front side and the back side.
Toshiaki AZUMA, Shun FUKUCHI
Filed: 22 Aug 22
Utility
Power Conversion Device
6 Apr 23
In this power conversion device, a DC-DC converter substrate on which a DC-DC converter element is mounted is attached to a base portion along the front surface or back surface of the flat plate-shaped base portion.
Toshiaki AZUMA, Shun FUKUCHI
Filed: 22 Aug 22
Utility
Device, Semiconductor Apparatus, Gate Driver, and Power Module
6 Apr 23
Provided is a device including a series circuit in which a rectifying element and a fuse element are connected in series, in which one end on an anode side of the rectifying element in the series circuit is connected to a first connection point having a reference potential, and another end on a cathode side of the rectifying element in the series circuit is connected to a second connection point that is to have a potential higher than the reference potential.
Masashi AKAHANE
Filed: 17 Aug 22
Utility
Method of manufacturing semiconductor device
4 Apr 23
A method of manufacturing a semiconductor device, including preparing a semiconductor wafer having first and second main surfaces opposite to each other, forming a photoresist film on the first main surface of the semiconductor wafer, forming a plurality of openings at predetermined positions in the photoresist film, cleaning the semiconductor wafer with water after the openings are formed, drying the semiconductor wafer by rotating the semiconductor wafer around a center axis that is orthogonal to the first main surface of the semiconductor wafer, to thereby generate a centrifugal force to cause the water that is left in the openings of the photoresist film to fly off the semiconductor wafer, and ion-implanting a predetermined impurity by a predetermined acceleration energy from the first main surface of the semiconductor wafer, using the photoresist film as a mask, after the drying.
Naoko Kodama
Filed: 29 Jan 21
Utility
Semiconductor device
4 Apr 23
A main semiconductor device element is SiC-MOSFETs with a trench gate structure, the main semiconductor device element having main MOS regions responsible for driving the MOSFETs and main SBD regions that are regions responsible for SBD operation.
Yasuyuki Hoshi
Filed: 29 Jul 21
Utility
Driving apparatus, semiconductor apparatus, and driving method
4 Apr 23
A driving apparatus includes: a driving section configured to drive a control terminal of a semiconductor device according to a control signal input from an outside, the semiconductor device including a first main terminal, a second main terminal, and the control terminal that is configured to control a connection state between the first main terminal and the second main terminal that are connected in parallel with a snubber; and a drive control section configured to lower a drive capability of the driving section during a period in which an inter-main-terminal voltage between the first main terminal and the second main terminal changes by a predetermined reference voltage difference owing to switching of the semiconductor device, compared with other at least some periods.
Seiki Igarashi
Filed: 26 Oct 21
Utility
Semiconductor device
4 Apr 23
A semiconductor device is provided, comprising a plurality of circuit portions, and a first connection portion and a second connection portion that are formed of planar conductive materials and connected to any of the circuit portions, wherein the first connection portion and the second connection portion are arranged with respective main surfaces facing each other, the first connection portion and the second connection portion each comprising a circuit connection end connected to the circuit portions, a path restriction portion for restricting a current path in the main surface, directions of currents flowing through the current paths between the path restriction portions and the circuit connection ends are different in the first connection portion and the second connection portion.
Sayaka Yamamoto
Filed: 26 Aug 20
Utility
Semiconductor Device and Method for Manufacturing Semiconductor Device
30 Mar 23
A semiconductor device includes: an electrically conductive plate; a semiconductor chip on the electrically conductive plate, the semiconductor chip having a front main electrode on a front surface thereof and a back main electrode on a back surface thereof, the back main electrode being bonded to the electrically conductive plate; and a heat radiating member that is bonded to the front main electrode via a conductive adhesive.
Hiroaki ICHIKAWA
Filed: 1 Aug 22
Utility
Semiconductor Device
30 Mar 23
A semiconductor device, including a board, a semiconductor module disposed on a front surface of the board, and a case that includes (1) side wall portions that are disposed on the front surface of the board and that surround, with the board, a storage area including the semiconductor module, (2) a cover portion that is disposed on the side wall portions to cover the storage area, the cover portion having a terminal opening formed therein, and (3) a guiding projection portion formed on an inner surface of the cover portion, and protruding toward the storage area.
Akira ISO
Filed: 27 Jul 22
Utility
Silicon Carbide Semiconductor Device
30 Mar 23
An n--type drift layer is an n--type epitaxial layer doped with nitrogen as an n-type dopant and is co-doped with aluminum as a p-type dopant, the n--type drift layer containing the nitrogen and aluminum substantially uniformly throughout.
Takeshi TAWARA, Shinsuke HARADA
Filed: 29 Nov 22
Utility
Insulated Gate Semiconductor Device
23 Mar 23
An insulated gate semiconductor device includes: a carrier transport layer of a first conductivity-type; an injection control region of a second conductivity-type; a carrier supply region of the first conductivity-type; a base contact region of the second conductivity-type; trenches penetrating the injection control region to reach the carrier transport layer; an insulated gate structure provided inside the respective trenches; an upper buried region of the second conductivity-type being in contact with a bottom surface of the injection control region; a lower buried region of the second conductivity-type being in contact with a bottom surface of the upper buried region and a bottom surface of the respective trenches; and a high-concentration region of the first conductivity-type provided inside the carrier transport layer to be in contact with a part of a bottom surface of the lower buried region.
Syunki NARITA
Filed: 23 Nov 22
Utility
Insulated Gate Semiconductor Device
23 Mar 23
An insulated gate semiconductor device includes: a carrier transport layer of a first conductivity-type; an injection control region of a second conductivity-type; a carrier supply region of the first conductivity-type provided at an upper part of the injection control region; a base contact region of the second conductivity-type provided at an upper part of the injection control region; trenches penetrating the injection control region to reach the carrier transport layer; an insulated gate structure provided inside the respective trenches; an upper buried region of the second conductivity-type being in contact with a bottom surface of the injection control region; and a lower buried region of the second conductivity-type being in contact with a bottom surface of the upper buried region and a bottom surface of the respective trenches, wherein the lower buried region is separated from each other via the carrier transport layer between the trenches.
Syunki NARITA
Filed: 29 Nov 22