2134 patents
Page 3 of 107
Utility
Power Converter and Power Converter Manufacturing Method
21 Dec 23
A power converter includes a case including an outlet with an outlet opening in a principal surface thereof, and a wiring member having, as an external connection portion, a portion that extends out from the outlet opening and is bent at the outlet opening toward the principal surface.
Norihiro DAICHO, Taichi ITOH
Filed: 24 Apr 23
Utility
Semiconductor Device
21 Dec 23
A semiconductor device includes: an insulated circuit substrate; a semiconductor chip provided on the insulated circuit substrate; a first external connection terminal provided on the insulated circuit substrate; a relay terminal provided on the insulated circuit substrate; a printed circuit board arranged over the semiconductor chip and connected to the first external connection terminal and the relay terminal; and a first snubber circuit provided on the printed circuit board and having one end connected to the first external connection terminal via the printed circuit board and another end connected to the relay terminal via the printed circuit board.
Akira HIRAO, Yoshinari IKEDA, Motohito HORI
Filed: 24 Apr 23
Utility
Power Converter
21 Dec 23
An object of the present invention is to provide a power converter capable of reducing inductance and preventing a manufacturing process from becoming complicated.
Masaki HIRAKATA
Filed: 26 Apr 23
Utility
Semiconductor Device
14 Dec 23
A frame body includes reinforcing portions.
Toshio DENTA
Filed: 24 Apr 23
Utility
Semiconductor Module
14 Dec 23
Provided is a semiconductor module including: a reverse conducting first switching element which is provided on one of an upper arm and a lower arm; a reverse conducting second switching element which is provided on another of the upper arm and the lower arm; a first path member which is electrically connected to one of a gate electrode and an emitter electrode of the first switching element; and a second path member which is electrically connected to another of the gate electrode and the emitter electrode of the first switching element.
Hiroyuki NOGAWA
Filed: 22 Aug 23
Utility
Semiconductor Device and Its Manufacturing Method
14 Dec 23
A semiconductor device includes: a substrate of a first conductivity type; a first diffusion layer of a second conductivity type provided in an upper part of the substrate; a conductive layer embedded in a trench provided in an upper part of the first diffusion layer via an insulating film, the conductive layer forming a capacitive element together with the first diffusion layer and the insulating film; and a second diffusion layer of the first conductivity type provided in an upper part of the first diffusion layer so as to be shallower than the trench and to constitute a resistive element, wherein at least a part of the trench and at least a part of the second diffusion layer are alternately arranged side by side in a plan view.
Yoshiaki TOYODA
Filed: 2 Jun 23
Utility
Semiconductor Device and Manufacturing Method of Semiconductor Device
14 Dec 23
Provided is a semiconductor device including a drift region, a buffer region which is provided in a back surface side of a semiconductor substrate relative to the drift region and has a first peak of a doping concentration, and a first lattice defect region which is provided in a front surface side of the semiconductor substrate relative to the first peak in a depth direction of the semiconductor substrate, in which the buffer region has a hydrogen peak which is provided in the front surface side of the semiconductor substrate relative to the first lattice defect region, and an integrated concentration obtained by integrating the doping concentration in a direction from an upper end of the drift region to the hydrogen peak in the depth direction of the semiconductor substrate is equal to or larger than a critical integrated concentration.
Motoyoshi KUBOUCHI, Takashi YOSHIMURA, Yuki SAWA, Shogo YAMAGUCHI
Filed: 25 Aug 23
Utility
Semiconductor Module and Power Converter
14 Dec 23
A semiconductor module, including a converter circuit configured to generate an alternating-current (AC) voltage from a direct-current (DC) voltage input thereto, by receiving a first potential that is positive, a second potential that is negative, and a third potential lower than the first potential and higher than the second potential.
Taku TAKAKU
Filed: 22 May 23
Utility
Semiconductor Device
14 Dec 23
There is provided a semiconductor device in which the transistor portion has a first transistor region provided with the emitter region, the contact region, and the first base region; a second transistor region which is provided with the emitter region and the contact region and which is provided between the first transistor region and the diode portion; and a boundary region which includes the second base region and which is provided between the second transistor region and the diode portion, and at a front surface of the semiconductor substrate, an area of the contact region in the second transistor region is smaller than an area of the contact region in the first transistor region.
Tomonori MIZUSHIMA, Tatsuya NAITO
Filed: 25 Apr 23
Utility
Semiconductor Device
14 Dec 23
An abnormal input control circuit includes at least one of a first, a second or a third detection circuit.
Masahiro TAOKA
Filed: 23 May 23
Utility
Integrated circuit and semiconductor module
12 Dec 23
An integrated circuit, including: a first current source; a second current source provided in parallel to the first current source; a first resistor with one end coupled to an output of the first current source; a first bipolar transistor that is diode-connected and is coupled to the other end of the first resistor; a second bipolar transistor that is diode-connected and is coupled to an output of the second current source; a second resistor coupled to the second bipolar transistor; and an output circuit configured to output a voltage based on a first voltage outputted from the first current source and a second voltage outputted from the second current source.
Masashi Akahane, Taizo Asano
Filed: 23 May 22
Utility
Power converter
12 Dec 23
An object of the present invention is to provide a power converter capable of preventing upsizing of a chip on which a switching element is formed and detecting the temperature in a switching operation of the switching element.
Takeshi Kamimura
Filed: 27 Dec 21
Utility
Semiconductor Device
7 Dec 23
A semiconductor device has a semiconductor base substrate, a first electrode disposed on the surface of the semiconductor base substrate, a protective film covering an end portion of the first electrode, and a second electrode disposed on the first electrode, in an opening of the protective film.
Yasuyuki HOSHI
Filed: 24 Apr 23
Utility
Silicon Carbide Semiconductor Device and Silicon Carbide Semiconductor Substrate
7 Dec 23
First and second buffer regions and an n−-type drift region are sequentially formed by epitaxial growth on an n+-type starting substrate.
Makoto UTSUMI, Masaki MIYAZATO
Filed: 23 Aug 23
Utility
Insulated Gate Bipolar Transistor
7 Dec 23
Provided is an insulated gate bipolar transistor including: a base region which is provided between an emitter region and a drift region; an accumulation region which is provided between a base region and a drift region, and which has a doping concentration higher than that of the drift region; a gate trench portion which is provided from an upper surface of a semiconductor substrate to a portion below the accumulation region; and a lower end region which is provide to be in contact with a lower end of the gate trench portion; wherein the accumulation region has a first concentration peak in which the doping concentration indicates a maximum value in a depth direction, and a distance between the first concentration peak and the lower end region in a depth direction is less than a distance between the first concentration peak and the base region in the depth direction.
Takuya YAMADA, Seiji NOGUCHI, Yosuke SAKURAI, Ryutaro HAMASAKI, Daisuke OZAKI
Filed: 18 Aug 23
Utility
Power Conversion Device
7 Dec 23
A power conversion device includes a power converter including a semiconductor module, to convert input power and output the converted power, and a capacitor electrically connected to the semiconductor module.
Yuki YANO, Hiroyuki KUWAHARA, Yoshio MORI, Masamitsu TAKIZAWA, Jun KANDA
Filed: 22 May 23
Utility
Nitride semiconductor device
5 Dec 23
To provide a nitride semiconductor device excellent in switching characteristics.
Katsunori Ueno, Yuki Ohuchi
Filed: 22 Sep 21
Utility
Integrated circuit
5 Dec 23
An integrated circuit for a power supply circuit that includes a state-indicating circuit, which is a first or second circuit when the power supply circuit is of a non-isolated or isolated type, as the case may be.
Nobuyuki Hiasa
Filed: 26 Jan 22
Utility
Physical quantity sensor device including curved through-hole
5 Dec 23
A sensor device for measuring a physical quantity.
Kimihiro Ashino
Filed: 29 Dec 21
Utility
Short circuit detector and power converter
5 Dec 23
A short circuit detector is included in a power converter, the power converter being configured to supply power to a load via a first arm including a first semiconductor switch and a second arm including a second semiconductor switch.
Kunio Matsubara, Ryoga Kiguchi
Filed: 29 Dec 21