Exhibit 99.1
DIODES®
INCORPORATED
Investor Relations Presentation
Plano, TX
May 22, 2012
Page 2
Safe Harbor Statement
Any statements set forth herein that are not historical facts are forward-looking statements that involve risks and uncertainties that could cause actual results to differ materially from those in the forward-looking statements. Such forward-looking statements include, but are not limited to, statements regarding Diodes’ 2Q 2012 Business Outlook, including revenue to range between $155 million to $164 million, or up 7 percent to 13 percent sequentially; margin to be 26 percent, plus or minus 2 percent; operating expense, (without consideration of any gain on sale of assets,) are expected to remain approximately flat with first quarter on a percent of revenue basis; income tax rate to range between 7 and 13 percent; and shares used to calculate GAAP EPS for the second quarter are anticipated to be approximately 47.2 million.
Potential risks and uncertainties include, but are not limited to, such factors as Diodes’ business and growth strategy; the introduction and market reception to new product announcements; fluctuations in product demand and supply; prospects for the global economy; continued introduction of new products; Diodes’ ability to maintain customer and vendor relationships; technological advancements; impact of competitive products and pricing; growth in targeted markets; successful integration of acquired companies and/or assets; Diodes’ ability to successfully make additional acquisitions; risks of domestic and foreign operations, including excessive operation costs, labor shortages and joint venture prospects; unfavorable currency exchange rates; availability of tax credits; Diodes’ ability to maintain its current growth strategy or continue to maintain its current performance and loadings in manufacturing facilities; our future guidance may be incorrect; the global economic weakness may be more severe or last longer than Diodes currently anticipate; and other information detailed from time to time in filings with the United States Securities and Exchange Commission.
This presentation also contains non-GAAP measures. See the Company’s press release on May 8, 2012 titled, “Diodes Incorporated Reports First Quarter 2012 Financial Results” for detailed information related to the Company’s non-GAAP measures and a reconciliation of GAAP net income (loss) to non-GAAP net income (loss).
DIODES®
INCORPORATED
Page 3
Management Representative
Dr. Keh-Shew Lu
President and CEO
President and CEO Since 2005
Director – Diodes 10 years
Texas Instruments 27 years
Experience:
Senior Vice President of TI Worldwide Analog and Logic
Senior Vice President of TI Worldwide Memory
President of Texas Instruments – Asia
Education:
Master’s Degree and Doctorate in Electrical Engineering
Texas Tech University
Bachelor’s Degree in Engineering National Cheng Kung University – Taiwan
DIODES®
INCORPORATED
Page 4
Company Representative
Laura Mehrl
Director of Investor Relations
Since May 2010
Experience:
Director of Investor Relations, Diodes Incorporated, Plano, Texas
Senior Business Development Manager, STMicroelectronics, Carrollton, Texas
Sales Director for Analog Devices Inc., Shanghai, China
Product Marketing Manager at Texas Instruments (TI), Dallas, Texas
Senior Engineer at Lattice Semiconductor Inc., Hillsboro, Oregon
Wafer fab design engineer and product engineer at TI, Lubbock, Texas
Education:
MBA with concentration in International Marketing, Texas Tech University
BS in Electrical and Computer Engineering, University of Iowa
DIODES®
INCORPORATED
Page 5
About Diodes Incorporated
A leading global manufacturer and supplier of high-quality application specific, standard products within the broad discrete, logic and analog markets, serving the computing, consumer, industrial, communications and automotive segments.
DIODES®
INCORPORATED
Page 6
Business Objective
To consistently achieve above-market profitable growth, utilizing our innovative and cost-effective packaging technology, suited for high volume, high growth markets by leveraging process expertise and design excellence to deliver high quality semiconductor products.
DIODES®
INCORPORATED
Page 7
Significant Market Opportunity
2011 Total Semiconductor Market ($300 bn)
Opto
Discrete
Diodes’ SAM: $10 - $12 bn
Diodes’ SAM: $3 - $5 bn
Std Logic
Diodes’ SAM: $14 - $16 bn
Analog
Micro/Special
Memory
$23 bn
$21 bn
$19 bn
$42 bn
$61 bn
$134 bn
DIODES®
INCORPORATED
Page 8
Diodes Growth Strategy
Many Paths for Growth:
Product portfolio
Product arena
Product line expansion
Performance enhancement
Application space
Targeted end equipments
Broad customer base
Increased product coverage
Packaging breadth
Broad packaging portfolio Increased power density Small form factor
Application Space Packaging Capacity & Capability
Customer Base
Power Density
End Equipment Content
Miniaturization
Product Performance
Product Breadth
Product Portfolio
DIODES®
INCORPORATED
Page 9
Product Portfolio Progression
Discrete
Diodes
MOSFETs
Rectifiers
Transistors
Protection Devices
Analog
Power Management
Power Switches
Standard Linear
Sensors
LED Drivers
Logic
Low Voltage CMOS
High Speed CMOS
Advanced Ultra-Low
Power CMOS 2006 2010
ANALOG
LOGIC
DISCRETE
DIODES®
INCORPORATED
Page 10
Performance Enhancement
SKY Rectifiers SBR® (Super Barrier Rectifiers) (Vb < 400v) DIODESTARTM Rectifiers
(Vb > 600v)
MOSFETs DIOFETTM (Low RDS(on), Vb < 100V) DIODESTARTM MOSFETs
(Ultra low RDS(on), Vb > 600V)
Bipolar LDO CMOS LDO Low Noise LDO
(Low power)
DC-DC DC-DC DC-DC
(Asynchronous) (Asynchronous, high current) (Synchronous, with low & high current)
Diodes’ product upgrade has expanded our SAM.
DIODES®
INCORPORATED
Page 11
Efficiency, Functionality and Control for Smart Phones
LCD Backlighting
LED Drivers Boost Converters Schottky Diodes
LED Flash Module
Camera Flash Drivers ZXMN series MOSFETs
LCD / OLED Display Bias
LCD Bias ICs OLED Bias ICs Schottky Diodes
Battery Power Management
USB Power Switches
Current Monitors Charger ICs
Low-Saturation Bipolar Transistors ZXMP series MOSFETs
GPS Antenna Detection
Current Monitors
RF Power Amplifier
Low Dropout Regulators
System Voltage Conversion
Low Dropout Regulators DC-DC Converters Schottky Diodes
Low-Saturation Bipolar Transistors
Flip / Slide Detection
Hall Effect Sensors Hall Effect Drivers
Keypad Backlighting
LED Drivers Boost Converters
Schottky Diodes
DIODES®
INCORPORATED
Page 12
Strong Relationships Drive LCD/LED TV Product Roadmaps
LCD Display Buffer
40V High-gain BJT
System Power Conversion
Low Dropout Regulators DC-DC Converters Voltage References
Synchronous MOSFET Controllers 40V/100V SBR and Schottkys Bridge Rectifier Diodes
LCD LED Backlighting
Current Monitors
400V High-gain NPN BJT 60V/100V High-gain NPN BJT 60V/100V N-channel MOSFETS
CCFL Backlighting
30V Low On-resistance MOSFETs
Antenna Tuner
DC-DC Converters
40V Schottkys
System Interface
USB Power Switches Zener and TVS Arrays
System Power Management
Buck DC-DC Converters Low Dropout Regulators
20V/30V/40V SBR® and Schottkys 30V P-Channel MOSFETs 30V Low-saturation PNP BJT
Audio Amplifier
Buck DC-DC Converters Schottky Diodes SBR
DIODES
INCORPORATED®
Page 13
Product Breadth and Performance for Computing Platforms
LCD / LED Backlighting
LED Drivers
Boost Converters Schottky Diodes
System Voltage Conversion
Low Dropout Regulators DC-DC Converters Schottky Diodes Low-Saturation BJT
Battery Power Management
Current Monitors Load Switches Low-Saturation BJT ZXMP series MOSFETs
Open / Close Detection
Hall Effect Sensors Hall Effect Drivers
Audio Amplifier
Buck DC-DC Converters Schottky Diodes Super Barrier Rectifiers
Wireless Connectivity
DC-DC Converters
Low Dropout Regulators
System Power Management
Buck DC-DC Converters Low Dropout Regulators Super Barrier Rectifiers Schottky Diodes P-Channel MOSFETs Low-Saturation BJT
System Interface
USB Power Switches Zener and TVS Arrays
DIODES
INCORPORATED®
Page 14
Packaging Focus: Miniaturization and Power Efficiency
DFN0603-2
DFN1006-2
0.3mm DFN
0.4mm DFN
QFN 3~16 pin
SOD123/323
SOD-323F
SOT23F
SOD323F
SOT23/523 SC59
SOT143/SC82
SOT25/353
SOT26/363
SOT666
SOT953/963
TSOT23-3/5/6
TSSOP8
SOIC-8/14
MSOP8/10
QSOP16/20L
SOT89
SIP-3/4
SOT223
TO220/263/ ITO220S
TO252
PD-123/323
PM-III
PD-5 Power DI 5060
WL-CSP
SOLAR PowerDI-5SP
Power DI 3333
TSSOP14/16
DFN0806-3
Power DI 3030
Non-expose Pad
DFN1114-3 Pyramid Stack
DFN5060-4 Bridge
ITO220AC-S
Power DI 4040 Stack, Clip
E-CSP
Flip chip/Wafer Mold
DIODES
INCORPORATED®
Page 15
Packaging Focus: Miniaturization and Power Efficiency
Miniaturization
DFN 0603-2 Possibly the smallest Discrete semiconductor package.
Power Efficiency
Compared to a TO252, the PowerDI®5 package delivers twice the power density from a 55% smaller footprint.
0,62 mm
0,30 mm 0,32 mm
DIODES
INCORPORATED®
PowerDI®5
TO252
DIODES
INCORPORATED®
Page 16
Efficient Manufacturing + Superior Processes
Packaging
Shanghai-based packaging with capacity approximately 28 billion units
Flexible and optimized manufacturing process = low packaging cost
Additional packaging facilities in Neuhaus, Germany and JV in Chengdu, China
Wafer Fabs
Bipolar process technology for discrete and ICs
High volume 5” and 6” wafer fab in Kansas City, Missouri for discretes
6” Wafer fab in Oldham, United Kingdom
Strong engineering capabilities
Economies of Scale: Production Units in Shanghai (bn)
30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0
Capex Model = 10% - 12% of Revenue
1.3bn 2.1bn 3.4bn 5.4bn 8.2bn 11.8bn 15.4bn 16.7bn 20.3bn 16.0bn 23.2bn 27.8bn 25.3bn
2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011
DIODES
INCORPORATED®
Page 17
Collaborative Customer Relationships
OSRAM Hisense tyco Quanta SHINKO BOSE LAB126 DELPHI FUNAI
Huawei Technologies SAGEM Apple RADIANCE ECHOSTAR intel QUALCOMM LITEON wistron
MOTOROLA SHARP EMC power CBC SAMSUNG SIEMENS AMD Schneider Electric DELTA
NOVATEL WIRELESS Microsoft LG Electronics DELL NVIDIA PHILIPS HELLA FLEXTRONICS ZTE
Panasonic Roche BOSCH BOSCH CMO Haier CELESTICA CISCO SYSTEM AMTRAN EMERSON Pace LEXMARK
Continental BROADCOM. AUO BRAUN HARMAN Honeywell HTC Inventec RIM
COMPAL ELECTRONICS, INC. MURATA Innovator in Electronics GE Hon Hai technicolor Jabil CIRCUIT Skyworth CREE SANMINA
DIODES INCORPORATED®
Page 18
Outperforming the Industry
Annual Revenue Growth Rates
70% 60% 50% 40% 30% 20% 10% 0% -10% -20%
2003 to 2011 Growth Diodes Inc.: 21 % SAM Industry: 4.4%
18.2% 8.1% 35.60% 18.1% 15.6% -3.3% 59.9% 13.5% 16.9% -0.5% 8.0% -1.3% 4.0% -12.2% 41.1% 34.4% 3.6% -6.2%
2003 2004 2005 2006 2007 2008 2009 2010 2011
DIODES INCORPORATEDTM
Industry (Discrete + Analog)
*Acquisition Years
DIODES INCORPORATED®
Revenue Growth
( In millions )
700 600 500 400 300 200 100 0
2003 - 2011 (CAGR: 21%)
137186215343401433434613+41%635+3.6%
2003 2004 2005 2006 2007 2008 2009 2010 2011
DIODES INCORPORATED®
Page 20
Revenue Profile – 1Q2012
By Channel
Distribution 48% 52% OEM/EMS
By Region
Asia Pacific 77%
Europe 12%
North America 11%
By Segment
Consumer 34%
Communications 16%
Computing 26%
Industrial 20%
Automotive 4%
DIODES INCORPORATED®
Page 21
First Quarter 2012 Financial Performance
(In millions $ except per share) 1Q11 4Q11 Y/Y Q/Q
1Q12
Revenue $161.6 $143.3 $144.7 ($16.9) $1.4
Revenue Growth (10.5%) 1.0%
Gross Profit $57.4 $35.5 $33.7 ($23.7) ($1.8) Gross Margin % 35.5% 24.8% 23.3% (1220bp) (150bp) Operating Profit $28.3 $5.0 $5.5 ($22.8) $0.5
Net Income $19.7 $3.1 $4.9 ($14.8) $1.8 Earning per Share (Diluted) $0.42 $0.07 $0.10 ($0.32) $0.03 Cash Flow from Operations $15.7 ($3.0) $13.4 ($2.3) $16.4 EBITDA(Non-GAAP) $41.1 $19.7 $21.2 ($19.9) $1.5
DIODES INCORPORATED®
DIODES INCORPORATED®
Thank you
Smart Money
THE WALL STREET JOURNAL
20TH ANNIVERSARY ISSUE
Diodes was named one of the 10 Best Stocks of the Past 20 Years – March 2012
Company Contact:
Diodes Incorporated Laura Mehrl
Director of Investor Relations P: 972-987-3959 E: laura_mehrl@diodes.com
Investor Relations Contact:
Shelton Group Leanne K. Sievers
EVP, Investor Relations
P: 949-224-3874 E: lsievers@diodes.com
www.diodes.com
