42 patents
Page 3 of 3
Utility
Silicon carbide (SiC) device with improved gate dielectric shielding
21 Oct 19
In one general aspect, an apparatus can include a silicon carbide (SiC) device can include a gate dielectric, a first doped region having a first conductivity type, a source, a body region of the first conductivity type, and a second doped region having a second conductivity type.
Martin Domeij
Filed: 18 Jun 17
Utility
Isolation between semiconductor components
14 Oct 19
In some general aspects, an apparatus may include a first semiconductor die, a second semiconductor die, and a capacitive isolation circuit being coupled to the first semiconductor die and the second semiconductor die.
John Constantino, Timwah Luk, Ahmad Ashrafzadeh, Robert L. Krause, Etan Shacham, Maria Clemens Ypil Quinones, Janusz Bryzek, Chung-Lin Wu
Filed: 13 Aug 17