33 patents
Page 2 of 2
Utility
Power factor correction circuit and method
20 Apr 20
A Power Factor Correction (PFC) circuit includes an oscillator circuit.
Jintae Kim, Sangcheol Moon, Hangseok Choi
Filed: 29 Aug 18
Utility
Semiconductor device and method therefor
10 Feb 20
In one embodiment, a power supply controller, or alternately a semiconductor device having a power supply controller, may have a first circuit configured to form a sense signal that is representative of a signal from an auxiliary winding of a transformer.
Zhibo Tao, Chih-Hsien Hsieh, Yue-Hong Tang
Filed: 3 Feb 19
Utility
Substrate interposer on a leadframe
27 Jan 20
In one general aspect, a device can include a leadframe including at least one of an external input terminal or an external output terminal, an interposer made of an insulating material, and a redistribution layer coupled to the interposer and made of a conductive material.
Elsie Agdon Cabahug, Marie Clemens Ypil Quinones, Maria Cristina Estacio, Romel Nogas Manatad, Chung-Lin Wu, Jerome Teysseyre
Filed: 23 Mar 16
Utility
Overcurrent detection circuit and method, load switch, and portable device
6 Jan 20
The present invention provides an overcurrent detection circuit, an overcurrent detection method, a load circuit, and a portable device.
Maoxu Li, Shide Zheng
Filed: 25 Feb 15
Utility
LED drive circuit with a programmable input for LED lighting
6 Jan 20
An LED drive circuit includes a controller, generating a switching signal to switch a magnetic device that receives an input voltage derived from an input of the LED drive circuit, for generating an output current to drive at least a LED.
Ta-Yung Yang, Chuh-Ching Li, Ming-Chieh Lee, Kuo-Hsien Huang
Filed: 24 Jul 19
Utility
Magnetic sensor utilizing magnetization reset for sense axis selection
23 Dec 19
In one general aspect, a system includes a material including a surface, and a magnetic sensor configured to sense a first component and a second component of a magnetic field.
Phil Mather
Filed: 8 Oct 17
Utility
Avalanche-rugged silicon carbide (SiC) power device
9 Dec 19
In at least one general aspect, a silicon carbide (SiC) device can include a drift region and a termination region at least partially surrounding the SiC device.
Andrei Konstantinov
Filed: 15 Jul 18
Utility
Hybrid gate dielectrics for semiconductor power devices
25 Nov 19
In a general aspect, a power semiconductor device can include a silicon carbide (SiC) substrate and a SiC epitaxial layer disposed on the SiC substrate.
Salman Akram, Venkat Ananthan
Filed: 16 May 18
Utility
Packaged semiconductor devices with laser grooved wettable flank and methods of manufacture
18 Nov 19
In a general aspect, a method for producing a packaged semiconductor device can include coupling a semiconductor device to a leadframe structure having a signal lead that is electrically coupled with the semiconductor device.
Aira Lourdes Villamor, Erwin Victor Cruz, Geraldine Suico, Silnore Sabando
Filed: 16 May 18
Utility
Input AC line control for AC-DC converters
4 Nov 19
An AC-DC converter includes a main switch that is controlled according to an input AC line voltage.
Jason Guo, Laszlo Balogh, Gwanbon Koo, Sangcheol Moon, Bonggeun Chung, Chenghao Jin
Filed: 25 Aug 16
Utility
Charge pump circuit for providing voltages to multiple switch circuits
28 Oct 19
A charge pump circuit generates a charge pump voltage that powers a bias circuit.
Lei Huang
Filed: 5 Jul 16
Utility
Silicon carbide (SiC) device with improved gate dielectric shielding
21 Oct 19
In one general aspect, an apparatus can include a silicon carbide (SiC) device can include a gate dielectric, a first doped region having a first conductivity type, a source, a body region of the first conductivity type, and a second doped region having a second conductivity type.
Martin Domeij
Filed: 18 Jun 17
Utility
Isolation between semiconductor components
14 Oct 19
In some general aspects, an apparatus may include a first semiconductor die, a second semiconductor die, and a capacitive isolation circuit being coupled to the first semiconductor die and the second semiconductor die.
John Constantino, Timwah Luk, Ahmad Ashrafzadeh, Robert L. Krause, Etan Shacham, Maria Clemens Ypil Quinones, Janusz Bryzek, Chung-Lin Wu
Filed: 13 Aug 17