593 patents
Page 4 of 30
Utility
Voltage domain global shutter readout circuit
15 Aug 23
A global shutter readout circuit includes a reset transistor coupled between a reset voltage and a bitline.
Zhe Gao, Hiroaki Ebihara, Ling Fu, Tiejun Dai
Filed: 26 May 22
Utility
Low power event driven pixels with passive difference detection circuitry, and reset control circuits for the same
15 Aug 23
Low power event driven pixels with passive difference detection circuit (and reset control circuits for the same) are disclosed herein.
Andreas Suess, Shoushun Chen
Filed: 27 Jul 22
Utility
Semiconductor Substrate with Passivated Full Deep-trench Isolation
10 Aug 23
An image sensor with passivated full deep-trench isolation includes a semiconductor substrate, the substrate including a plurality of sidewalls that form a plurality of trenches that separates pixels of a pixel array, each of the plurality of trenches extending from a first surface of the semiconductor substrate to a second surface opposite the first surface, and a passivation layer disposed on the second surface, the passivation layer lining the plurality of sidewall surfaces and the back surface of the semiconductor substrate.
Cynthia Sun Yee LEE, Shiyu SUN
Filed: 5 Apr 23
Utility
Ramp settling assist circuit in local ramp buffer circuit
8 Aug 23
A ramp buffer circuit includes an input device having an input coupled to receive a ramp signal.
Hiroaki Ebihara, Zhenfu Tian, Tao Sun, Liang Zuo, Yu-Shen Yang, Satoshi Sakurai, Rui Wang
Filed: 13 Apr 22
Utility
Circuit and Method for Image Artifact Reduction in High-Density, High-Pixel-Count, Image Sensor with Phase Detection Autofocus
3 Aug 23
In an embodiment, a method of reducing resistance-capacitance delay along photodiode transfer lines of an image sensor includes forking a plurality of photodiode transfer lines each into a plurality of sublines coupled together and to a first decoder-driver at a first end of each subline; and distributing selection transistors of a plurality of multiple-photodiode cells among the plurality of sublines.
Selcuk SEN, Liang ZUO, Rui WANG, Xuelian LIU, Min QU, Hiroaki EBIHARA
Filed: 3 Feb 22
Utility
Alignment Method for Image Sensor Fabrication and Associated Semiconductor Device
3 Aug 23
The present disclosure provides an alignment method for image sensor fabrication that involve forming a number of set of alignment marks using key process mask layers to improve alignment registration between process mask layers so as to reduce number of alignment transfer improves alignment accuracy between pixel elements.
Qin Wang, Yu Jin
Filed: 31 Jan 23
Utility
Image sensor with shifted color filter array pattern and bit line pairs
1 Aug 23
An imaging device includes groupings of photodiodes having four photodiodes.
Qingfei Chen, Rui Wang, Wei Wei Wang, Zhiyong Zhan, Xin Wang, Qingwei Shan, Kenny Geng
Filed: 3 Feb 22
Utility
Sample and hold switch driver circuitry with slope control
1 Aug 23
A switch driver circuit includes a plurality of pullup transistors.
Zhe Gao, Ling Fu, Yu-Shen Yang, Tiejun Dai
Filed: 18 Nov 21
Utility
Flicker-mitigating pixel-array substrate
25 Jul 23
A flicker-mitigating pixel-array substrate includes a semiconductor substrate and a metal annulus.
Yuanliang Liu, Bill Phan, Duli Mao, Hui Zang
Filed: 10 Dec 20
Utility
Image Processing Method and Apparatus Implementing the Same
20 Jul 23
An image processing method and a device configured to implement the same are disclosed.
LUIS EDUARDO GARCÍA CAPEL, BO MU
Filed: 14 Jan 22
Utility
Image sensor and method for reading out signal of image sensor
18 Jul 23
An image sensor includes a plurality of pixels that is arranged in a matrix and each of which outputs a signal in response to incident light, wherein readout of data can be performed with respect to the plurality of pixels, and simultaneous readout of data of a plurality of columns of pixels can be performed, and at least one pixel of the plurality of columns of pixels to be read simultaneously can be read for phase detection with respect to each of divided sub-pixels.
Hiroki Ui, Eiichi Funatsu
Filed: 7 Apr 22
Utility
Image sensor with voltage supply grid clamping
18 Jul 23
An image sensing device includes an image sensing circuit, a voltage supply grid, bitlines, and a control circuit.
Chengcheng Xu, Rui Wang, Bi Yuan, Liang Zuo
Filed: 19 Nov 21
Utility
Method of forming shallow trench isolation (STI) structure for suppressing dark current
18 Jul 23
A method of fabricating a target shallow trench isolation (STI) structure between devices in a wafer-level image sensor having a large number of pixels includes etching a trench, the trench having a greater depth and width than a target STI structure and epitaxially growing the substrate material in the trench for a length of time necessary to provide the target depth and width of the isolation structure.
Seong Yeol Mun
Filed: 22 Dec 21
Utility
Buried Channel Transistor Structures and Processes
13 Jul 23
Transistors include trenches formed in the semiconductor substrate having a first conductive type.
Hui Zang, Gang Chen
Filed: 10 Jan 22
Utility
Suppressed Cross-talk Pixel-array Substrate and Fabrication Method
13 Jul 23
A reduced cross-talk pixel-array substrate includes a semiconductor substrate, a buffer layer, a metal annulus, and an attenuation layer.
Seong Yeol MUN, Bill PHAN, Duli MAO
Filed: 10 Jan 22
Utility
Signal-charge Estimator and Method
13 Jul 23
A method for estimating a signal charge collected by a pixel of an image sensor includes determining an average bias that depends on the pixel's floating-diffusion dark current and pixel-sampling period.
Boyd Fowler, Andreas Suess
Filed: 20 Jul 22
Utility
Selective nitrided gate-oxide for RTS noise and white-pixel reduction
11 Jul 23
A pixel cell includes a nitrogen-implanted region at a semiconductor material-gate oxide proximate interface located in a region above a photodiode.
Seong Yeol Mun
Filed: 9 Jan 20
Utility
Vertical Transfer Structures
6 Jul 23
Pixels, such as for image sensors and electronic devices, include a photodiode formed in a semiconductor substrate, a floating diffusion, and a transfer structure selectively coupling the photodiode to the floating diffusion.
Qin Wang, Hui Zang
Filed: 5 Jan 22
Utility
Image Sensor for Infrared Sensing and Fabrication Thereof
6 Jul 23
The invention disclose a pixel in an image sensor capable of detecting infrared light and associated fabrication method.
Yin Qian, Chen-Wei Lu, Jin Li, Shao-Fan Kao, Tung-Ti Yeh
Filed: 27 Oct 22
Utility
High Dynamic Range, Backside-illuminated, Low Crosstalk Image Sensor with Walls Between Silicon Surface and First Layer Metal to Isolate Photodiodes
6 Jul 23
A backside-illuminated image sensor includes arrayed photodiodes separated by isolation structures, and interlayer dielectric between first layer of metal interconnect and substrate.
Seong Yeol MUN, Duli MAO, Bill PHAN
Filed: 6 Jan 22