292 patents
Page 9 of 15
Utility
Transistors Having Increased Effective Channel Width
30 Sep 21
Image sensors include a photodiode disposed in a semiconductor substrate and a transistor operatively coupled to the photodiode.
Sing-Chung Hu, Seong Yeol Mun, Bill Phan
Filed: 25 Mar 20
Utility
Transistors Having Increased Effective Channel Width
30 Sep 21
Image sensors include a photodiode disposed in a semiconductor substrate and a transistor operatively coupled to the photodiode.
Chiao-Ti Huang, Sing-Chung Hu, Yuanwei Zheng
Filed: 25 Mar 20
Utility
Pixel and Associated Transfer-gate Fabrication Method
2 Sep 21
A method for forming a transfer gate includes (i) forming a dielectric pillar on a surface of a semiconductor substrate and (ii) growing an epitaxial layer on the semiconductor substrate and surrounding the dielectric pillar.
Hui ZANG, Gang CHEN
Filed: 28 Feb 20
Utility
Medical Micro-cable Structure and Connection Method with Mini Camera Cube Chip
26 Aug 21
A novel endoscope includes a camera module, an electrical cable, and an electrical connector.
Teng-Sheng Chen, Wei-Feng Lin, Xiang-Dong Xiong
Filed: 20 Feb 20
Utility
Image Sensor With Voltage Buffer For Self-Test
19 Aug 21
A test voltage sample and hold circuitry is disclosed in a readout circuitry of an image sensor.
Zhiyong Zhan, Tongtong Yu, Xin Wang, Liang Zuo, Kenny Geng
Filed: 18 Feb 20
Utility
Flare-suppressing Image Sensor
5 Aug 21
A flare-suppressing image sensor includes a first pixel formed in a substrate and a refractive element located above the first pixel.
Alireza BONAKDAR, Zhiqiang LIN, Chen-Wei LU
Filed: 30 Jan 20
Utility
Light-trapping Image Sensors
5 Aug 21
A light-trapping image sensor includes a pixel array and a lens array.
Alireza BONAKDAR, Zhiqiang LIN, Lindsay GRANT
Filed: 30 Jan 20
Utility
Flare-blocking Image Sensor
5 Aug 21
A flare-blocking image sensor includes large pixels and small pixels, a microlens, and an opaque element.
Alireza BONAKDAR, Shinn-Jhy LIAN, Badrinath PADMANABHAN
Filed: 30 Jan 20
Utility
Image Sensors with Quantum Efficiency Enhanced by Inverted Pyramids
5 Aug 21
An image sensor with quantum efficiency enhanced by inverted pyramids includes a semiconductor substrate and a plurality of microlenses.
Alireza BONAKDAR, Zhiqiang LIN, Bill PHAN, Badrinath PADMANABHAN
Filed: 30 Jan 20
Utility
Light Attenuation Layer Fabrication Method and Structure for Image Sensor
29 Jul 21
An image sensor includes a substrate having a plurality of small photodiodes and a plurality of large photodiodes surrounding the small photodiodes.
Hui Zang, Yuanliang Liu
Filed: 28 Jan 20
Utility
Dam of Image Sensor Module Having Sawtooth Pattern and Inclined Surface on Its Inner Wall and Method of Making Same
22 Jul 21
An image sensor module comprises an image sensor having a light sensing area, a cover glass for covering the light sensing area, a dam between the image sensor and the cover glass, which surrounds the light sensing area, and has an outer wall and an inner wall, where a cross-section of the inner wall parallel to the surface of the light sensing area of the image sensor forms a sawtooth pattern and/or, where a cross-section of the inner wall orthogonal to the surface of the light sensing area of the image sensor forms an inclined surface.
Wei-Feng Lin, En-Chi Li, Chi-Chih Huang
Filed: 20 Jan 20
Utility
Shallow Trench Isolation (Sti) Structure for Cmos Image Sensor
22 Jul 21
A shallow trench isolation (STI) structure and method of fabrication includes a two-step epitaxial growth process.
Seong Yeol Mun
Filed: 21 Jan 20
Utility
Shallow Trench Isolation (Sti) Structure for Suppressing Dark Current and Method of Forming
22 Jul 21
A method of fabricating a target shallow trench isolation (STI) structure between devices in a wafer-level image sensor having a large number of pixels includes etching a trench, the trench having a greater depth and width than a target STI structure and epitaxially growing the substrate material in the trench for a length of time necessary to provide the target depth and width of the isolation structure.
Seong Yeol Mun
Filed: 21 Jan 20
Utility
Selective Nitrided Gate-oxide for RTS Noise and White-pixel Reduction
15 Jul 21
A pixel cell includes a nitrogen-implanted region at a semiconductor material-gate oxide proximate interface located in a region above a photodiode.
Seong Yeol Mun
Filed: 9 Jan 20
Utility
Image Sensor with Fully Depleted Silicon on Insulator Substrate
1 Jul 21
A fully depleted silicon on insulator (FDSOI) is employed to reduce diffusion leakage (e.g., gate induced drain leakage, junction leakage, etc.) associated with the diffusion regions of a pixel cell.
Seong Yeol Mun
Filed: 30 Dec 19
Utility
Method and Structure to Improve Image Sensor Crosstalk
1 Jul 21
Image sensors include a substrate material having a plurality of small photodiodes (SPDs) and a plurality of large photodiodes (LPDs) disposed therein.
Yuanliang Liu, Bill Phan, Duli Mao, Alireza Bonakdar
Filed: 27 Dec 19
Utility
Transistor Having Increased Effective Channel Width
1 Jul 21
Image sensors include a photodiode formed in a substrate material and a transistor coupled to the photodiode.
Seong Yeol Mun, Young Woo Jung
Filed: 27 Dec 19
Utility
Image Sensor with Partially Encapsulating Attenuation Layer
1 Jul 21
A pixel cell includes a first photodiode, a second photodiode, a first deep trench isolation region, a second deep trench isolation region, a buffer oxide layer, and a light attenuation layer.
Yuanliang Liu, Bill Phan, Duli Mao
Filed: 30 Dec 19
Utility
Wide Dynamic Range Image Sensor with Global Shutter
1 Jul 21
An image sensor includes a photodiode disposed in a semiconductor material to generate image charge in response to incident light, and a first transfer gate is coupled to the photodiode to extract image charge from the photodiode in response to a first transfer signal.
Sohei Manabe, Keiji Mabuchi
Filed: 17 Mar 21
Utility
Devices and Methods for Obtaining Three-dimensional Shape Information Using Polarization and Phase Detection Photodiodes
1 Jul 21
In some embodiments, an image sensor is provided.
Wenshou Chen, Guansong Liu, Yiyi Ren, Chin Poh Pang, Badrinath Padmanabhan, Alireza Bonakdar
Filed: 27 Dec 19