292 patents
Page 9 of 15
Utility
Transistors Having Increased Effective Channel Width
30 Sep 21
Image sensors include a photodiode disposed in a semiconductor substrate and a transistor operatively coupled to the photodiode.
Sing-Chung Hu, Seong Yeol Mun, Bill Phan
Filed: 25 Mar 20
Utility
Transistors Having Increased Effective Channel Width
30 Sep 21
Image sensors include a photodiode disposed in a semiconductor substrate and a transistor operatively coupled to the photodiode.
Chiao-Ti Huang, Sing-Chung Hu, Yuanwei Zheng
Filed: 25 Mar 20
Utility
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2 Sep 21
A method for forming a transfer gate includes (i) forming a dielectric pillar on a surface of a semiconductor substrate and (ii) growing an epitaxial layer on the semiconductor substrate and surrounding the dielectric pillar.
Hui ZANG, Gang CHEN
Filed: 28 Feb 20
Utility
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26 Aug 21
A novel endoscope includes a camera module, an electrical cable, and an electrical connector.
Teng-Sheng Chen, Wei-Feng Lin, Xiang-Dong Xiong
Filed: 20 Feb 20
Utility
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19 Aug 21
A test voltage sample and hold circuitry is disclosed in a readout circuitry of an image sensor.
Zhiyong Zhan, Tongtong Yu, Xin Wang, Liang Zuo, Kenny Geng
Filed: 18 Feb 20
Utility
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5 Aug 21
A flare-suppressing image sensor includes a first pixel formed in a substrate and a refractive element located above the first pixel.
Alireza BONAKDAR, Zhiqiang LIN, Chen-Wei LU
Filed: 30 Jan 20
Utility
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5 Aug 21
A light-trapping image sensor includes a pixel array and a lens array.
Alireza BONAKDAR, Zhiqiang LIN, Lindsay GRANT
Filed: 30 Jan 20
Utility
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5 Aug 21
A flare-blocking image sensor includes large pixels and small pixels, a microlens, and an opaque element.
Alireza BONAKDAR, Shinn-Jhy LIAN, Badrinath PADMANABHAN
Filed: 30 Jan 20
Utility
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5 Aug 21
An image sensor with quantum efficiency enhanced by inverted pyramids includes a semiconductor substrate and a plurality of microlenses.
Alireza BONAKDAR, Zhiqiang LIN, Bill PHAN, Badrinath PADMANABHAN
Filed: 30 Jan 20
Utility
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29 Jul 21
An image sensor includes a substrate having a plurality of small photodiodes and a plurality of large photodiodes surrounding the small photodiodes.
Hui Zang, Yuanliang Liu
Filed: 28 Jan 20
Utility
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22 Jul 21
An image sensor module comprises an image sensor having a light sensing area, a cover glass for covering the light sensing area, a dam between the image sensor and the cover glass, which surrounds the light sensing area, and has an outer wall and an inner wall, where a cross-section of the inner wall parallel to the surface of the light sensing area of the image sensor forms a sawtooth pattern and/or, where a cross-section of the inner wall orthogonal to the surface of the light sensing area of the image sensor forms an inclined surface.
Wei-Feng Lin, En-Chi Li, Chi-Chih Huang
Filed: 20 Jan 20
Utility
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22 Jul 21
A shallow trench isolation (STI) structure and method of fabrication includes a two-step epitaxial growth process.
Seong Yeol Mun
Filed: 21 Jan 20
Utility
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22 Jul 21
A method of fabricating a target shallow trench isolation (STI) structure between devices in a wafer-level image sensor having a large number of pixels includes etching a trench, the trench having a greater depth and width than a target STI structure and epitaxially growing the substrate material in the trench for a length of time necessary to provide the target depth and width of the isolation structure.
Seong Yeol Mun
Filed: 21 Jan 20
Utility
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15 Jul 21
A pixel cell includes a nitrogen-implanted region at a semiconductor material-gate oxide proximate interface located in a region above a photodiode.
Seong Yeol Mun
Filed: 9 Jan 20
Utility
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1 Jul 21
A fully depleted silicon on insulator (FDSOI) is employed to reduce diffusion leakage (e.g., gate induced drain leakage, junction leakage, etc.) associated with the diffusion regions of a pixel cell.
Seong Yeol Mun
Filed: 30 Dec 19
Utility
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1 Jul 21
Image sensors include a substrate material having a plurality of small photodiodes (SPDs) and a plurality of large photodiodes (LPDs) disposed therein.
Yuanliang Liu, Bill Phan, Duli Mao, Alireza Bonakdar
Filed: 27 Dec 19
Utility
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1 Jul 21
Image sensors include a photodiode formed in a substrate material and a transistor coupled to the photodiode.
Seong Yeol Mun, Young Woo Jung
Filed: 27 Dec 19
Utility
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1 Jul 21
A pixel cell includes a first photodiode, a second photodiode, a first deep trench isolation region, a second deep trench isolation region, a buffer oxide layer, and a light attenuation layer.
Yuanliang Liu, Bill Phan, Duli Mao
Filed: 30 Dec 19
Utility
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1 Jul 21
An image sensor includes a photodiode disposed in a semiconductor material to generate image charge in response to incident light, and a first transfer gate is coupled to the photodiode to extract image charge from the photodiode in response to a first transfer signal.
Sohei Manabe, Keiji Mabuchi
Filed: 17 Mar 21
Utility
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1 Jul 21
In some embodiments, an image sensor is provided.
Wenshou Chen, Guansong Liu, Yiyi Ren, Chin Poh Pang, Badrinath Padmanabhan, Alireza Bonakdar
Filed: 27 Dec 19