301 patents
Page 7 of 16
Utility
Dark current/white pixel devices and methods for lateral overflow image sensors
24 May 22
Image sensors having reduced dark current and white pixel are disclosed herein.
Takuma Hasegawa
Filed: 5 May 21
Utility
Cell deep trench isolation structure for near infrared improvement
17 May 22
A pixel cell includes a photodiode disposed in a pixel cell region and proximate to a front side of a semiconductor layer to generate image charge in response to incident light directed through a backside to the photodiode.
Hui Zang, Cunyu Yang, Gang Chen
Filed: 16 Jul 20
Utility
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17 May 22
Low noise silicon-germanium (SiGe) image sensor.
Mamoru Iesaka, Woon Il Choi, Sohei Manabe
Filed: 30 Apr 20
Utility
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10 May 22
A lens-array imager includes lenses Lm forming a lens array having a pitch dx, a pixel array including pixel-array regions Rm, and apertured baffle-layers therebetween; m={0, 1, 2, . . . }.
Regis Fan
Filed: 30 Apr 20
Utility
jvxb76i3pkf88v0cxnt8r w6amh3re486g4yzbjmbl990b7t5qhqek
10 May 22
An image sensor and an electronic device are disclosed.
Jinhua Rao, Haibo Xiao
Filed: 3 Aug 20
Utility
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10 May 22
A pixel array includes a semiconductor substrate, a plurality of isolation layer segments, and a plurality of photodiodes.
Qin Wang, Gang Chen
Filed: 22 Aug 19
Utility
7c5zqdzveyhbo4bdt003niozkudzst1iwb8ek1pp7bjdksz72jipvcsk
10 May 22
Image sensors include a substrate material having a plurality of small photodiodes (SPDs) and a plurality of large photodiodes (LPDs) disposed therein.
Yuanliang Liu, Bill Phan, Duli Mao, Alireza Bonakdar
Filed: 27 Dec 19
Utility
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3 May 22
A diffractive optical element (DOE) comprises a first part comprising a first transparent non-conductive base and a first transparent conductive layer disposed on the first transparent non-conductive base and a second part comprising a second transparent non-conductive base and a second transparent conductive layer disposed on the second transparent non-conductive base.
Chun-Sheng Fan, Wei-Feng Lin
Filed: 4 Jun 19
Utility
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3 May 22
An image sensor pixel array comprises a plurality of image pixel units to gather image information and a plurality of phase detection auto-focus (PDAF) pixel units to gather phase information.
Chin Poh Pang, Chen-Wei Lu, Shao-Fan Kao, Chun-Yung Ai, Yin Qian, Dyson Tai, Qingwei Shan, Lindsay Grant
Filed: 10 Oct 19
Utility
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29 Mar 22
A pixel cell readout circuit includes an amplifier and a capacitor switch circuit that includes a first routing path coupled to an input of the amplifier.
Hiroaki Ebihara
Filed: 18 Dec 20
Utility
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29 Mar 22
An image sensor includes a substrate material, an array of the color filters, an array of waveguides and spacers.
Alireza Bonakdar, Zhiqiang Lin
Filed: 6 Sep 19
Utility
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29 Mar 22
A shallow trench isolation (STI) structure and method of fabrication includes a two-step epitaxial growth process.
Seong Yeol Mun
Filed: 21 Jan 20
Utility
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22 Mar 22
A method of fabricating a target shallow trench isolation (STI) structure between devices in a wafer-level image sensor having a large number of pixels includes etching a trench, the trench having a greater depth and width than a target STI structure and epitaxially growing the substrate material in the trench for a length of time necessary to provide the target depth and width of the isolation structure.
Seong Yeol Mun
Filed: 21 Jan 20
Utility
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22 Mar 22
A pixel includes a semiconductor substrate, an upper surface thereof forming a trench having a trench depth relative to a planar region of the upper surface surrounding the trench, and in a plane perpendicular to the planar region; an upper width between the planar region and an upper depth that is less than the trench depth; and a lower width, between the upper depth and the trench depth, that is less than the upper width.
Hui Zang, Gang Chen
Filed: 11 Dec 19
Utility
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22 Mar 22
A structure light module comprises: a VCSEL substrate comprising a VCSEL array comprising a plurality of individual VCSELs; a first spacer disposed on the VCSEL substrate; a first wafer level lens comprising a glass substrate and at least a replicated lens on a first surface of the glass substrate disposed on the first spacer; a FOE disposed on the first wafer level lens; a second spacer disposes on the FOE; a second wafer level lens comprising a glass substrate and at least a replicated lens on a first surface of the glass substrate disposed on the second spacer; a third spacer disposed on the second wafer level lens; a DOE disposed on the third spacer, where a structure light is projected from the DOE on a target surface for 3D imaging.
Wei-Ping Chen, Tsung-Wei Wan, Jau-Jan Deng
Filed: 4 Sep 18
Utility
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22 Mar 22
An imaging device includes groupings of photodiodes having four photodiodes.
Qingfei Chen, Rui Wang, Wei Wei Wang, Zhiyong Zhan, Xin Wang, Qingwei Shan, Kenny Geng
Filed: 22 Apr 20
Utility
92b6t1i6qhoxhnrau6w7d3j305oulqa21vnkyxmkpghq7n3
8 Mar 22
An image sensor includes a photodiode disposed in a semiconductor material to generate image charge in response to incident light, and a first transfer gate is coupled to the photodiode to extract image charge from the photodiode in response to a first transfer signal.
Sohei Manabe, Keiji Mabuchi
Filed: 17 Mar 21
Utility
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1 Mar 22
A fully depleted silicon on insulator (FDSOI) is employed to reduce diffusion leakage (e.g., gate induced drain leakage, junction leakage, etc.) associated with the diffusion regions of a pixel cell.
Seong Yeol Mun
Filed: 30 Dec 19
Utility
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15 Feb 22
Switching techniques for fast voltage settling in image sensors are described.
Tiejun Dai, Zhe Gao, Ling Fu
Filed: 29 Sep 20
Utility
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15 Feb 22
An image sensor includes a plurality of photodiodes, a plurality of color filters, and a plurality of microlenses.
Chin Poh Pang, Guansong Liu, Xiaodong Yang, Boyang Zhang, Hongjun Li, Da Meng
Filed: 11 Dec 19