40 patents
Utility
Heat Treatment Environment Evaluation Method and Silicon Carbide Substrate
18 Jan 24
An object of the present invention is to provide a novel technique for evaluating a heat treatment environment.
Tadaaki KANEKO, Daichi DOJIMA
Filed: 27 Oct 21
Utility
Evaluation Method for Silicon Carbide Substrates
21 Dec 23
Tadaaki KANEKO, Daichi DOJIMA
Filed: 27 Oct 21
Utility
Method for Producing Aluminum Nitride Substrate, Aluminum Nitride Substrate, and Method for Suppressing Introduction of Dislocation into Aluminum Nitride Growth Layer
7 Dec 23
A problem addressed by the present invention is to provide a novel technique with which is possible to suppress the introduction of dislocation into a growth layer.
Tadaaki KANEKO, Daichi DOJIMA, Taku MURAKAWA, Moeko MATSUBARA, Yoshitaka NISHIO
Filed: 30 Mar 21
Utility
Method for Manufacturing Aluminum Nitride Substrate, Aluminum Nitride Substrate, and Method for Forming Aluminum Nitride Layer
28 Sep 23
Tadaaki KANEKO, Daichi DOJIMA, Moeko MATSUBARA, Yoshitaka NISHIO
Filed: 30 Mar 21
Utility
Method for Leaching Nickel from Nickel Ore and Method for Producing Nickel Sulfate
17 Aug 23
Provided is a method for leaching nickel from a nickel oxide ore that enables a nickel sulfate production method which is easily carried out with a small amount of waste generation.
Yuji YAMAMOTO, Masahiro GOTO, Takafumi HANADA, Takeru MORIYAMA, Ryosuke OHSAWA
Filed: 8 Feb 23
Utility
Ising solver system
25 Jul 23
An ising solver system that searches an optimal route of a vehicle from plural routes passing through plural locations.
Hirotaka Irie, Akira Miki, Masayoshi Terabe, Toru Awashima, Shunsuke Takahashi, Wongpaisarnsin Goragot, Shiowattana Dungjade
Filed: 12 Mar 20
Utility
Aluminum Nitride Substrate Manufacturing Method, Aluminum Nitride Substrate, and Method of Removing Strain Layer Introduced into Aluminum Nitride Substrate by Laser Processing
6 Jul 23
The problem to be solved by the present invention is to provide a novel technique that can remove a strained layer introduced into an aluminum nitride substrate.
Tadaaki KANEKO, Daichi DOJIMA, Moeko MATSUBARA, Yoshitaka NISHIO
Filed: 30 Mar 21
Utility
Method for Producing Semiconductor Substrate, Semiconductor Substrate, and Method for Preventing Crack Occurrence In Growth Layer
29 Jun 23
Tadaaki KANEKO, Daichi DOJIMA
Filed: 30 Mar 21
Utility
Method for Manufacturing Semiconductor Substrate, Semiconductor Substrate, and Method for Suppressing Introduction of Displacement to Growth Layer
25 May 23
The problem to be solved by the present invention is to provide novel technology capable of suppressing the introduction of displacement to a growth layer.
Tadaaki KANEKO, Daichi DOJIMA
Filed: 30 Mar 21
Utility
Metal Removal Agent
9 Mar 23
A metal removal agent used when removing Mg from an aluminum alloy melt whose raw material is scrap or the like and used for formation of a molten salt layer that takes in Mg from an aluminum alloy melt.
Jun YAOKAWA, Takuma MINOURA, Kazuma HIBI, Hiroshi KAWAHARA, Yasushi IWATA, Hiroyuki ISHII, Akira KANO, Yusei KUSAKA, Kyosuke ITO, Tomoo MURATA
Filed: 11 Jan 21
Utility
Metal Removal Method and Metal Recovery Method
9 Feb 23
A method with which Mg can be removed from aluminum alloy melt whose raw material is scrap or the like.
Takuma MINOURA, Jun YAOKAWA, Kazuma HIBI, Hiroshi KAWAHARA, Yasushi IWATA, Hiroyuki ISHII, Akira KANO, Yusei KUSAKA, Kyosuke ITO, Tomoo MURATA
Filed: 11 Jan 21
Utility
Magnesium Removal Agent and Production Method for Aluminum Alloy
2 Feb 23
A Mg removal agent is composed of a chloride and copper oxide.
Kazuma HIBI, Jun YAOKAWA, Hiroyuki MORI, Takuma MINOURA, Hiroshi KAWAHARA, Yasushi IWATA, Kyosuke ITO, Satoshi NAKANO, Hiroyuki ISHII, Akira KANO, Yusei KUSAKA
Filed: 12 Jul 22
Utility
Sic Single Crystal Manufacturing Method, Sic Single Crystal Manufacturing Device, and Sic Single Crystal Wafer
26 Jan 23
An object of the present invention is to provide a novel SiC single crystal with reduced internal stress while suppressing SiC sublimation.
Tadaaki KANEKO
Filed: 24 Sep 20
Utility
Method of Manufacturing Sic Semiconductor Device and Sic Semiconductor Device
24 Nov 22
An object of the present invention is to provide a high-quality SiC semiconductor device.
Tadaaki KANEKO, Kiyoshi KOJIMA
Filed: 24 Sep 20
Utility
Sic Substrate, Sic Substrate Production Method, Sic Semiconductor Device, and Sic Semiconductor Device Production Method
10 Nov 22
The present invention addresses the issue of providing: an SiC substrate having a dislocation conversion layer that can reduce resistance; and a novel technology pertaining to SiC semiconductors.
Tadaaki KANEKO
Filed: 24 Sep 20
Utility
Metal Purifying Method and Metal Purifying Apparatus
3 Nov 22
A metal purifying method having: a local heating step of heating an aluminum-based molten metal in a first region on a molten metal surface of the aluminum-based molten metal; and a local low pressure step of lowering the pressure in a second region on the molten metal surface to a pressure lower than the pressure in the first region.
Hiroshi KAWAHARA, Jun YAOKAWA, Kazuma HIBI, Hiroyuki MORI, Yasushi IWATA, Takuma MINOURA, Hiroyuki ISHII, Daisuke SAKUMA, Yusei KUSAKA, Akira KANO, Kyosuke ITO, Satoshi NAKANO
Filed: 14 Apr 22
Utility
Method for Manufacturing Sic Substrate
27 Oct 22
The present invention addresses the problem of providing novel techniques for manufacturing a SiC substrate that enables reduced material loss when a strained layer is removed.
Tadaaki KANEKO
Filed: 24 Sep 20
Utility
SiC SEED CRYSTAL AND METHOD FOR PRODUCING SAME, SiC INGOT PRODUCED BY GROWING SAID SiC SEED CRYSTAL AND METHOD FOR PRODUCING SAME, AND SiC WAFER PRODUCED FROM SAID SiC INGOT AND SiC WAFER WITH EPITAXIAL FILM AND METHODS RESPECTIVELY FOR PRODUCING SAID SiC WAFER AND SAID SiC WAFER WITH EPITAXIAL FILM
20 Oct 22
An object of the present invention is to provide a novel technology capable of achieving high-quality SiC seed crystal, SiC ingot, SiC wafer and SiC wafer with an epitaxial film.
Tadaaki KANEKO, Kiyoshi KOJIMA
Filed: 5 Aug 20
Utility
Method for Producing Semiconductor Substrates and Device for Producing Semiconductor Substrates
6 Oct 22
The present invention attempts to solve the problem of providing novel technology that makes it possible to grow high-quality semiconductor substrates.
Tadaaki KANEKO, Kiyoshi KOJIMA
Filed: 24 Sep 20
Utility
Power Adjustment System and Aggregation Device
29 Sep 22
A power adjustment system adjusts charging and discharging power of a plurality of electrified vehicles in a virtual power plant that uses the electrified vehicles as energy resources.
Shunsuke KOBUNA, Yusuke HORII, Masato EHARA, Yukio NEZU, Chinatsu TAKEUCHI, Kenji YODOSE
Filed: 18 Mar 22