99 patents
Page 5 of 5
Utility
System and method for extending the maximum duty cycle of a step-down switching converter without maximum duty control
9 Nov 20
The invention proposes a system and method for extending the maximum duty cycle of a step-down switching converter to nearly 100% while maintaining a constant switching frequency.
Youngbok Kim
Filed: 14 Aug 19
Utility
Slope compensation for peak current mode control modulator
9 Nov 20
A ramp signal generator generates a slope compensated ramp signal with optimal slope compensation for a current mode control modulator.
Nicholas I. Archibald, Rhys S. A. Philbrick, Steven P. Laur
Filed: 3 Dec 19
Utility
Temperature and V
9 Nov 20
A power MOSFET Rdson compensation device comprising analog circuitry receives an input signal proportional to a voltage drop across a power MOSFET, one or more base reference voltages, a voltage-dependent reference voltage, and a temperature-dependent reference voltage.
Gilbert S. Z. Lee
Filed: 11 Jul 19
Utility
Low capacitance transient voltage suppressor including a punch-through silicon controlled rectifier as low-side steering diode
2 Nov 20
A transient voltage suppressor (TVS) device uses a punch-through silicon controlled rectifier (SCR) structure for the high-side steering diode and/or the low-side steering diode where the punch-through SCR structure realizes low capacitance at the protected node.
Shekar Mallikarjunaswamy
Filed: 25 Oct 18
Utility
Super-fast transient response (STR) AC/DC converter for high power density charging application
26 Oct 20
A charger comprises a housing, a first multi-layer printed circuit board (PCB), a second multi-layer PCB, and a third multi-layer PCB.
Pei-Lun Huang, Yu-Ming Chen, Tien-Chi Lin, Jung-Pei Cheng, Yueh-Ping Yu, Zhi-Qiang Niu, Xiaotian Zhang, Long-Ching Wang
Filed: 27 Jun 19
Utility
Silicon carbide MOSFET with source ballasting
26 Oct 20
An integrated device and a method for making said integrated device.
Vipindas Pala
Filed: 18 Sep 18
Utility
Schottky diode integrated into superjunction power MOSFETs
26 Oct 20
A trench metal-oxide-semiconductor field-effect transistor (MOSFET) device comprises an active cell area including a plurality of superjunction trench power MOSFETs, and a Schottky diode area including a plurality of Schottky diodes formed in the drift region having the superjunction structure.
Yi Su, Madhur Bobde
Filed: 14 Dec 17
Utility
Dual-gate trench IGBT with buried floating P-type shield
12 Oct 20
A method of manufacturing an insulated gate bipolar transistor (IGBT) device comprising 1) preparing a semiconductor substrate with an epitaxial layer of a first conductivity type supported on the semiconductor substrate of a second conductivity type; 2) applying a gate trench mask to open a first trench and second trench followed by forming a gate insulation layer to pad the trench and filling the trench with a polysilicon layer to form the first trench gate and the second trench gate; 3) implanting dopants of the first conductivity type to form an upper heavily doped region in the epitaxial layer; and 4) forming a planar gate on top of the first trench gate and apply implanting masks to implant body dopants and source dopants to form a body region and a source region near a top surface of the semiconductor substrate.
Jun Hu, Madhur Bobde, Hamza Yilmaz
Filed: 26 Jan 19
Utility
Detection circuit, switching regulator having the same and control method
5 Oct 20
A detection circuit for detecting an inductor current flowing through an inductor is provided.
Bu-Wei Chen, Yueh-Ping Yu, Jung-Pei Cheng
Filed: 25 Jun 19
Utility
DC resistance sense temperature compensation
5 Oct 20
A circuit for providing temperature compensation to a sense signal having a first temperature coefficient includes a temperature compensation circuit receiving a temperature sense signal indicative of a temperature associated with the sense signal where the temperature compensation circuit is digitally configurable by at least one digital signal to generate a compensating impedance signal having a second temperature coefficient.
Rhys Philbrick, Steven P. Laur, Nicholas Archibald
Filed: 27 Jan 20
Utility
Asymmetrical blocking bidirectional gallium nitride switch
14 Sep 20
A high electron mobility transistor (HEMT) gallium nitride (GaN) bidirectional blocking device includes a hetero-junction structure comprises a first semiconductor layer interfacing a second semiconductor layer of two different band gaps thus generating an interface layer as a two-dimensional electron gas (2DEG) layer.
David Sheridan
Filed: 30 May 19
Utility
Switching regulator controller configuration parameter optimization
14 Sep 20
A controller for a multi-phase switching regulator includes an error amplifier configured to generate an error signal indicative of the difference between a feedback voltage and a reference voltage; a loop calculator configured to generate control signals in response to the error signal to drive the power stages; and a dynamic phase management control circuit configured to generate a power efficiency value in response to the input current, the input voltage, the output current, and the output voltage.
Richard Schmitz
Filed: 12 Mar 19
Utility
Semiconductor chip integrating high and low voltage devices
7 Sep 20
The present invention is directed to a semiconductor chip comprising a high voltage device and a low voltage device disposed thereon.
Hideaki Tsuchiko
Filed: 13 Nov 18
Utility
Semiconductor device having one or more titanium interlayers and method of making the same
31 Aug 20
A semiconductor device comprising a substrate layer, an epitaxial layer, a dielectric layer, a first aluminum layer, a first titanium interlayer and a second aluminum layer.
Wei He, Chris Wiebe, Hongyong Xue
Filed: 28 Aug 19
Utility
HV converter with reduced EMI
31 Aug 20
A high voltage (HV) converter implemented on a printed circuit board (PCB) includes a double diffused metal oxide semiconductor (DMOS) package comprising a lead frame and a main DMOS chip.
Zhiqiang Niu, Kuang Ming Chang, Lin Chen, Ning Sun, QiHong Huang, Tzu-Hsin Lu
Filed: 28 Aug 19
Utility
Vertical trench DMOSFET having integrated implants forming enhancement diodes in parallel with the body diode
31 Aug 20
Fabricating a semiconductor device comprises: forming a gate trench in an epitaxial layer overlaying a semiconductor substrate; depositing gate material in the gate trench; forming a body in the epitaxial layer; forming a source embedded in the body; forming a contact trench that extends through the source and at least part of the body; disposing an implant at least along a contact trench wall; and disposing an epitaxial enhancement portion below the contact trench and in contact with the implant.
Ji Pan, Anup Bhalla
Filed: 3 Mar 16
Utility
Semiconductor device and method of forming including superjunction structure formed using angled implant process
24 Aug 20
A semiconductor device includes a superjunction structure formed using simultaneous N and P angled implants into the sidewall of a trench.
Karthik Padmanabhan, Madhur Bobde, Lingpeng Guan, Lei Zhang, Hamza Yilmaz
Filed: 17 Mar 19
Utility
Electrical power conversion system, control method and bridge rectifier
24 Aug 20
A power conversion system includes a bridge switch circuit.
Ming-Hsueh Chen
Filed: 29 Sep 19
Utility
Nanotube semiconductor devices
16 Mar 20
Semiconductor devices includes a thin epitaxial layer (nanotube) formed on sidewalls of mesas formed in a semiconductor layer.
Hamza Yilmaz, Xiaobin Wang, Anup Bhalla, John Chen, Hong Chang
Filed: 11 Jul 19