7 patents
Utility
Method of forming semiconductor device using range compensating material
11 Apr 23
A method of forming a semiconductor device includes providing a semiconductor substrate with a circuit layer, forming a range compensating layer over the semiconductor substrate, the range compensating layer having a plurality of different thicknesses, each of the plurality of different thicknesses being inversely proportional to a stopping power of structures disposed under the respective thickness of the range compensating layer, implanting ions into the semiconductor substrate, the ions traveling through the range compensating layer and the circuit layer to define a cleave plane in the semiconductor substrate, removing the range compensating layer, and cleaving the semiconductor substrate at the cleave plane.
Theodore E. Fong, Michael I. Current
Filed: 12 Feb 21
Utility
Layer transfer of films utilizing controlled shear region
13 Sep 22
A film of material may be formed by providing a semiconductor substrate having a surface region and a cleave region located at a predetermined depth beneath the surface region.
Francois J. Henley
Filed: 5 Jul 19
Utility
Three dimensional integrated circuit with lateral connection layer
9 Aug 22
Forming a 3DIC includes providing a lower device structure comprising a first substrate with a circuit layer, providing an interconnect network layer having an interconnect structure with a first coupled to a second plurality of electrodes by connection structures on a semiconductor substrate, the first plurality of electrodes being exposed on a first surface of the interconnect layer, implanting ions through the interconnect structure to form a cleave plane in the semiconductor substrate, bonding the interconnect structure to the lower device structure so that electrodes of the first plurality of electrodes are coupled to corresponding electrodes on the lower device structure, cleaving the substrate of the bonded interconnect layer at the cleave plane, removing material from the semiconductor substrate until the second plurality of electrodes is exposed, and bonding an upper device layer to the interconnect structure.
Michael I. Current, Theodore E. Fong
Filed: 8 Oct 21
Utility
Three dimensional integrated circuit
16 Feb 21
Implanting ions to form a cleave layer in a semiconductor device causes damage to sensitive materials such as high-K dielectrics.
Theodore E. Fong, Michael I. Current
Filed: 21 Feb 20
Utility
Three dimensional integrated circuit
12 Oct 20
A method of forming a device includes providing a first substrate having a first area and a second area, forming a range compensating material over the first substrate so that the first material is disposed over the first area and not disposed over the second area, implanting ions into the first area and the second area to form first and second cleave planes at first and second depths, respectively, each of the first and second cleave planes being defined by a concentration of the implanted ions, removing the range compensating material, and cleaving the first substrate along a cleave profile including the first and second cleave planes.
Theodore E. Fong, Michael I. Current
Filed: 13 Feb 20
Utility
Shaped silicon ingot using layer transfer
15 Jun 20
A shaped crystalline ingot for an ion cleaving process has a major surface that is substantially planar, a first side face that is substantially planar along a first direction orthogonal to the major surface, and a second side face that is substantially planar along a second direction orthogonal to the major surface.
Francois J. Henley
Filed: 6 Sep 18
Utility
Three dimensional integrated circuit
24 Feb 20
Implanting ions to form a cleave layer in a semiconductor device causes damage to sensitive materials such as high-K dielectrics.
Theodore E. Fong, Michael I. Current
Filed: 6 Aug 18
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