98 patents
Page 2 of 5
Utility
Device-like Metrology Targets
23 Jun 22
Metrology targets, production processes and optical systems are provided, which enable metrology of device-like targets.
Vladimir Levinski, Amnon Manassen, Eran Amit, Nuriel Amir, Liran Yerushalmi, Amit Shaked
Filed: 8 Mar 22
Utility
Method and Apparatus
23 Jun 22
A metallic feature on a substrate is subjected to a plasma dicing process and is cleaned.
Janet Hopkins, Simon Dawson
Filed: 10 Dec 21
Utility
Method for Measuring and Correcting Misregistration Between Layers In a Semiconductor Device, and Misregistration Targets Useful Therein
23 Jun 22
A method for measurement of misregistration in the manufacture of semiconductor device wafers, the method including measuring misregistration between layers of a semiconductor device wafer at a first instance and providing a first misregistration indication, measuring misregistration between layers of a semiconductor device wafer at a second instance and providing a second misregistration indication, providing a misregistration measurement difference output in response to a difference between the first misregistration indication and the second misregistration indication, providing a baseline difference output and ameliorating the difference between the misregistration measurement difference output and the baseline difference output.
Roie Volkovich, Renan Milo, Liran Yerushalmi, Moran Zaberchik, Yoel Feler, David Izraeli
Filed: 7 Mar 22
Utility
Inspection of Reticles Using Machine Learning
17 Mar 22
Disclosed are methods and apparatus for inspecting a photolithographic reticle.
Hawren Fang, Abdurrahman Sezginer, Rui-fang Shi
Filed: 24 Nov 21
Utility
Deposition Method
17 Mar 22
Pulsed DC reactive sputtering of a target deposits an additive-containing aluminium nitride film onto a metallic layer of a semiconductor substrate.
Scott Haymore, Adrian Thomas, Tony Wilby
Filed: 30 Aug 21
Utility
Apparatus for the Exposure of Plate-shaped Workpieces with High Throughput
24 Feb 22
A movable table system comprising two identical tables on a common rail arrangement having a linear rail region underneath a detection unit and a processing unit, and therefore the tables can be alternatingly moved in a straight line along the common rail arrangement, in the same table-movement direction, fully underneath the detection unit and processing unit, and can be independently controlled by a computer unit.
Steffen RUECKER, Uwe KLOWSKY
Filed: 11 Dec 19
Utility
Plasma Etching Apparatus and Method
17 Feb 22
A plasma etching apparatus for etching a semiconductor substrate comprises: a plasma chamber; a plasma generation device for sustaining a plasma within the plasma chamber; a substrate support disposed within the plasma chamber for supporting the semiconductor substrate, the substrate support comprising an electrically conductive structure; a power supply for providing an RF electrical signal having an RF power to the electrically conductive structure; and an annular dielectric ring structure comprising a backside surface, the backside surface comprising an electrically conductive coating; wherein the electrically conductive structure is spaced apart from and extends under the electrically conductive coating so that when RF power is provided to the electrically conductive structure the RF power couples to the electrically conductive coating.
Maxime Varvara, Codrin Prahoveanu
Filed: 23 Jul 21
Utility
Cross Layer Common-unique Analysis for Nuisance Filtering
13 Jan 22
Common events between layers on a semiconductor wafer are filtered.
Bjorn Brauer
Filed: 27 Sep 21
Utility
Method of Deposition
16 Dec 21
A hydrogenated silicon carbon nitride (SiCN:H) film is deposited onto a substrate by plasma enhanced chemical vapour deposition (PECVD) comprising: providing the substrate in a chamber; introducing silane (SiH4), a carbon-donating precursor, and nitrogen gas (N2) into the chamber; and sustaining a plasma in the chamber so as to deposit SiCN:H onto the substrate by PECVD, wherein the substrate is maintained at a temperature of less than about 250° C.
Tristan Harper, Kathrine Crook
Filed: 20 May 21
Utility
Single Cell Grey Scatterometry Overlay Targets and Their Measurement Using Varying Illumination Parameter(s)
2 Dec 21
Scatterometry overlay (SCOL) measurement methods, systems and targets are provided to enable efficient SCOL metrology with in-die targets.
Amnon Manassen, Yuri Paskover, Eran Amit
Filed: 13 Aug 21
Utility
Production of Three-Dimensional Structures by Means of Photoresists
4 Nov 21
A process for the production of three-dimensional structures involves generating stepped structures in the micrometer to millimeter range.
Jens THEIS, Frank BIERAU
Filed: 29 Apr 21
Utility
Deposition Method
14 Oct 21
Sputter depositing a metallic layer on a substrate in the fabrication of a resonator device includes providing a magnetron sputtering apparatus comprising a chamber, a substrate support disposed within the chamber, a target made from a metallic material, and a plasma generating device, wherein the substrate support and the target are separated by a distance of 10 cm or less; supporting the substrate on the substrate support; performing a DC magnetron sputtering step that comprises sputtering the metallic material from the target onto the substrate so as to form a metallic layer on the substrate, wherein during the DC magnetron sputtering step the chamber has a pressure of at least 6 mTorr of a noble gas, the target is supplied with a power having a power density of at least 6 W/cm2, and the substrate has a temperature in the range of 200-600° C.
Scott Haymore, Adrian Thomas, Steve Burgess
Filed: 9 Mar 21
Utility
Apparatus for Electrochemically Processing Semiconductor Substrates
14 Oct 21
A method of processing a semiconductor wafer is provided.
JOHN MACNEIL, MARTIN AYRES, TREVOR THOMAS
Filed: 24 Jun 21
Utility
Topographic Phase Control For Overlay Measurement
19 Aug 21
Metrology tools and methods are provided, which estimate the effect of topographic phases corresponding to different diffraction orders, which result from light scattering on periodic targets, and adjust the measurement conditions to improve measurement accuracy.
Vladimir Levinski, Yuri Paskover, Amnon Manassen, Yoni Shalibo
Filed: 26 Apr 21
Utility
DC Magnetron Sputtering
12 Aug 21
A method of depositing a film on a substrate is provided.
SCOTT HAYMORE, AMIT RASTOGI, RHONDA HYNDMAN, STEVE BURGESS, IAN MONCRIEFF
Filed: 27 Apr 21
Utility
Pe-cvd Apparatus and Method
12 Aug 21
A capacitively coupled Plasma Enhanced Chemical Vapour Deposition (PE-CVD) apparatus has a chamber, a first electrode with a substrate support positioned in the chamber, a second electrode with a gas inlet structure positioned in the chamber, and an RF power source connected to the gas inlet structure for supplying RF power thereto.
Stephen BURGESS, Katherine CROOK, Daniel ARCHARD, William ROYLE, Euan Alasdair MORRISON
Filed: 8 Jan 21
Utility
Vacuum Hold-down Apparatus for Flattening Bowed Semiconductor Wafers
15 Jul 21
Vacuum hold-down apparatus suitable for retaining a wafer in a desired position and orientation, the apparatus including a vacuum chuck assembly defining a vacuum chuck surface having a vacuum communication aperture, a venturi vacuum generator fixed with respect to the vacuum chuck assembly and communicating with the vacuum chuck surface via the vacuum communication aperture and a positive pressure fluid line communicating with the venturi vacuum generator.
Ariel Hildesheim, Ofer Angel
Filed: 25 Mar 19
Utility
Method and Apparatus for Plasma Etching
24 Jun 21
A structure comprising a substrate and a component which forms involatile metal etch products is plasma etched.
Huma Ashraf, Kevin Riddell, Codrin Prahoveanu
Filed: 15 Nov 20
Utility
Method of Plasma Etching
24 Jun 21
A structure comprising a semiconductor substrate and a layer of PZT (lead zirconate titanate) is etched by performing a first plasma etch step with a first etch process gas mixture.
Huma Ashraf, Kevin Riddell, Codrin Prahoveanu
Filed: 23 Nov 20
Utility
Wafer Exposure Method Using Wafer Models and Wafer Fabrication Assembly
24 Jun 21
Critical dimension values can be obtained from wafer structures at predefined measurement sites.
Stefan Buhl, Philip Groeger, Patrick Lomtscher
Filed: 19 Feb 20