47788 patents
Page 21 of 2390
Utility
Participation of Robots In Defect Repair
21 Dec 23
A method, computer system, and a computer program product for defect repair is provided.
Saraswathi Sailaja Perumalla, Sarbajit K. Rakshit, Sathya Santhar, Venkataramana Bora
Filed: 15 Jun 22
Utility
Transformation of Return Content Using Artificial Intelligence
21 Dec 23
Provided is a computer-implemented method, system, and computer program product for transforming return content to new content using artificial intelligence.
Nosaiba Dar Mousa, Karl Owen Casserly, Warren Boldrin
Filed: 20 Jun 22
Utility
Contextual Positioning In Virtual Space
21 Dec 23
Methods, systems, and a computer program product are disclosed.
Martin G. Keen, Jeremy R. Fox, Alexander Reznicek, Bahman Hekmatshoartabari
Filed: 20 Jun 22
Utility
Safety Violation Detection
21 Dec 23
A method, computer system, and a computer program product for safety violation detection is provided.
John S. Werner, Aishwarya Gopinath, Arkadiy O. Tsfasman
Filed: 15 Jun 22
Utility
Dynamically Updating Digital Visual Content Via Aggregated Feedback
21 Dec 23
Embodiments can include receiving, by a data processing system, digital teaching content monitoring, by the data processing system, user gaze of the digital teaching content.
Sreekanth L. KAKARAPARTHY, Vijay A. KUMAR, Danish CONTRACTOR, Seema NAGAR, Kuntal DEY, Utkarsh DWIVEDI
Filed: 30 Aug 23
Utility
Shallow and Deep Contacts with Stitching
21 Dec 23
A semiconductor device is provided.
Su Chen Fan, Stuart Sieg, Dominik Metzler, Indira Seshadri, Junli Wang
Filed: 15 Jun 22
Utility
Method and Structure of Forming Independent Contact for Staggered Cfet
21 Dec 23
A microelectronic structure including a plurality of lower transistors and a plurality of upper transistor, where each of the plurality of lower transistors and the plurality of upper transistors includes a plurality of channel.
Ruilong Xie, Albert M. Chu, Albert M. Young, Brent A. Anderson, Junli Wang, Ravikumar Ramachandran
Filed: 20 Jun 22
Utility
Method and Structure of Forming Contacts and Gates for Staggered Fet
21 Dec 23
A microelectronic structure including a plurality of lower transistors and a plurality of upper transistors, where channels of the upper transistors are staggered from channels of the lower transistors.
Ruilong Xie, Albert M. Chu, Junli Wang, Brent A. Anderson, Anthony I. Chou, Dechao Guo
Filed: 20 Jun 22
Utility
Self-aligned Gate Jumper Connecting Adjacent Gates
21 Dec 23
An approach that provides a method for forming a semiconductor structure with a gate jumper.
Julien Frougier, Ruilong Xie, Min Gyu Sung, Heng Wu
Filed: 16 Jun 22
Utility
Stepped Source Drain Contact for Gate-all-around Transistor
21 Dec 23
A gate-all-around transistor structure including a channel region surrounded on three sides by a gate conductor, and a pair of salicide regions extending from opposite ends of the channel region in a direction parallel with the gate conductor.
Su Chen Fan, Nicolas Jean Loubet, Yann Mignot, Tsung-Sheng Kang, Eric Miller
Filed: 21 Jun 22
Utility
Distributed Platform for Computation and Trusted Validation
21 Dec 23
An example operation may include one or more of obtaining data of a simulation, identifying checkpoints within the simulation data, generating a plurality of sequential data structures based on the identified checkpoints, where each data structure identifies an evolving state of the simulation with respect to a previous data structure among the sequential data structures, and transmitting the generated sequential data structures to nodes of a blockchain network for inclusion in one or more data blocks within a hash-linked chain of data blocks.
Ravi Kiran Raman, Kush R. Varshney, Roman Vaculin, Michael Hind, Sekou L. Remy, Eleftheria K. Pissadaki, Nelson K. Bore
Filed: 29 Aug 23
Utility
Artificial Intelligence Supporting Content Delivery
21 Dec 23
According to one embodiment, a method, computer system, and computer program product for gathering relevant digital content.
Rafaela Frota, John S. Werner, Andrew C. M. Hicks
Filed: 20 Jun 22
Utility
Self-aligned Backside Contact with Increased Contact Area
21 Dec 23
A first and a second source drain region, an upper source drain contact connected to the first source drain region, a bottom source drain contact connected to the second source drain region, a dielectric spacer surrounds opposite vertical side surfaces of the bottom source drain contact and overlaps a vertical side surface and a lower horizontal surface of a bottom isolation region.
Ruilong Xie, Kisik Choi, Junli Wang, Somnath Ghosh, Julien Frougier, Min Gyu Sung, Theodorus E. Standaert, Nicolas Jean Loubet, Huiming Bu
Filed: 24 May 22
Utility
Semiconductor Device Having a Backside Power Rail
21 Dec 23
A semiconductor device includes a plurality of field effect transistors (FET) formed upon semiconductor fins.
Ruilong Xie, Junli Wang, Julien Frougier, Dechao Guo, Lawrence A. Clevenger
Filed: 15 Jun 22
Utility
Vertical Field Effect Transistor with Strained Channel
21 Dec 23
A vertical field effect transistor with a strained channel includes a channel fin structure extending vertically from a substrate.
Shogo Mochizuki, Juntao Li, Kangguo Cheng
Filed: 15 Jun 22
Utility
Multi-state Field Effect Transistor Device
21 Dec 23
Embodiments of present invention provide a transistor structure.
Karthik Yogendra, Maruf Amin Bhuiyan, Kangguo Cheng
Filed: 15 Jun 22
Utility
Secret Smart Operations In Blockchain
21 Dec 23
A system may enact a process including initiating an operation to transfer a secret, establishing n groups of nodes in a blockchain network, dividing a secret into n secret parts, creating n group keys, encrypting each secret part of the secret with a corresponding group key, and recording encrypted secret parts on the blockchain networks.
Lei Yu, Qi Zhang, Petr Novotny, Nitin Gaur
Filed: 16 Jun 22
Utility
Offset Power Rail
21 Dec 23
The semiconductor device includes a first cell row, a first power rail and a second power rail.
Albert M. Chu, Vidhi Zalani, Junli Wang
Filed: 21 Jun 22
Utility
Method and Structure of Forming Sidewall Contact for Stacked Fet
21 Dec 23
A microelectronic structure including a stacked transistor having a lower transistor and an upper transistor.
Ruilong Xie, Julien Frougier, Su Chen Fan, Ravikumar Ramachandran, Oleg Gluschenkov
Filed: 16 Jun 22
Utility
Self-aligned Backside Contact with Increased Contact Area
21 Dec 23
A first source drain region adjacent to a first transistor, a second source drain region adjacent to a second transistor, an upper source drain contact above the first source drain region, a bottom source drain contact below the second source drain region, the bottom and the upper source drain contacts are on opposite sides, a horizontal surface of the bottom source drain contact is adjacent to a horizontal surface of dielectric side spacers surrounding the second source drain region.
Ruilong Xie, Kisik Choi, Junli Wang, SOMNATH GHOSH, Julien Frougier, Min Gyu Sung, Theodorus E. Standaert, Nicolas Jean Loubet, Huiming Bu
Filed: 24 May 22