47788 patents
Page 27 of 2390
Utility
Support Device Deployment
14 Dec 23
A method providing a support device to assist personnel includes receiving data values from various devices associated with a task being performed by personnel, wherein the various devices include at least one Internet of Things (IoT) device and at least one wearable device.
Akash U. Dhoot, Nitika Sharma, Sarbajit K. Rakshit, Shailendra Moyal
Filed: 13 Jun 22
Utility
Method to Detect and Obstruct Fraudulent Transactions
14 Dec 23
A computer-implemented method for detecting and obstructing skimmer devices is disclosed.
Doga Tav, Cesar Augusto Rodriguez Bravo
Filed: 9 Jun 22
Utility
x3vmvnecj57uk6yzv30nh54pwcpogmh8l3w0axhwh1m3
14 Dec 23
A method, computer system, and a computer program product for improving environmental impact estimations is provided.
Jagabondhu Hazra, Manikandan Padmanaban, Isaac Waweru Wambugu, Lloyd A Treinish, Ivan Kayongo, Kumar Saurav, Ranjini Bangalore Guruprasad
Filed: 8 Jun 22
Utility
gqe027kgvxsr2hfdvel 8b
14 Dec 23
A method for performing a welding procedure includes determining conditions of the welding procedure using a virtual image of a structure on which the welding procedure is to be performed.
Shailendra Moyal, Sarbajit K. Rakshit, Partho Ghosh
Filed: 10 Jun 22
Utility
g7fzm8h03k9ud5ghz0j lvksdfnzmt8poed7wvbhw2j3hg23
14 Dec 23
Computer technology for performing dynamic code branching of self-adapted code upon successful execution of a contextual scenario by artificial intelligence (AI) enabled edge device (for example, an autonomous vehicle or an industrial robotic device). predicting a second contextual scenario where the AI enabled edge device can perform a predetermined activity, and proactively deploying self-adapted code on the AI enabled edge device.
Saraswathi Sailaja Perumalla, Sarbajit K. Rakshit, Sowjanya Rao
Filed: 14 Jun 22
Utility
tbp6ssecr7srgwruh xjye9ap7fpy
14 Dec 23
A computer processing system is provided for enhancing video-based language learning.
I-Hsiang Liao, Cheng-Yu Yu, Chih-Yuan Lin, Yu-Ning Hsu
Filed: 16 Aug 23
Utility
87gb2jsd4653km2lcpl3spzw5u
14 Dec 23
An embodiment for generating multi-turn dialog datasets for training of dialog or conversational agents.
Zilu Tang, Zhongshen zeng, Yara Rizk
Filed: 8 Jun 22
Utility
je3mz6g1isclg682wkh5othqzc1oqugdqhhm5vv5odl56qjjnbqpr3w
14 Dec 23
A method, a computer program product, and a computer system determine a name of an individual based on voice detection.
ETHAN S. HEADINGS, Feng-wei Chen, Neha S. Deshpande, Madhavi Kolachala
Filed: 10 Jun 22
Utility
tvvct9uz0qyg6o0pyrwtbm0l9swtrp k8o8
14 Dec 23
A memory device includes a magnetic tunnel junction (MTJ) pillar between a top electrode and a bottom electrode.
Oscar van der Straten, Koichi Motoyama, Chih-Chao Yang
Filed: 13 Jun 22
Utility
p76epl35n8v4wwx85sv12fq0nroi0klg00k6domjeebg
14 Dec 23
Embodiments of the invention include a semiconductor structure with a first magneto-resistive random access memory (MRAM) pillar with a bottom electrode layer, a reference layer connected above the bottom electrode layer, a free layer, and a tunnel barrier between the reference layer and the free layer.
Oscar van der Straten, Koichi Motoyama, Chih-Chao Yang
Filed: 14 Jun 22
Utility
9yxq1nwhems2in3y ypvqzpz3fdizldorqmn5owt8o0pori3uifesgvl
14 Dec 23
A semiconductor structure including a middle-of-line contact, a backside power rail, and a contact via extending between the middle-of-line contact and the backside power rail, wherein the contact via comprises a first portion having a negative tapered profile and a second portion having a positive tapered profile.
Ruilong Xie, Kisik Choi, SOMNATH GHOSH, Julien Frougier, Stuart Sieg, Kevin Shawn Petrarca
Filed: 10 Jun 22
Utility
xi3asbpxzjukna1z3sf87kp47j4ywap4y7a7zvzv
14 Dec 23
A semiconductor component includes an area of dielectric material extending below an uppermost surface of a substrate.
Sagarika Mukesh, Devika Sarkar Grant, FEE LI LIE, Hosadurga Shobha, Thamarai selvi Devarajan, Aakrati Jain
Filed: 13 Jun 22
Utility
55q3a67juna3592o cgun44henagyv54q
14 Dec 23
Provided is a semiconductor device.
Tao Li, Kisik Choi, Albert M. Young, Julien Frougier, Ruilong Xie
Filed: 13 Jun 22
Utility
60itcpf4z62atbl6tjyymxe8rxg16v8
14 Dec 23
A skip-level through-silicon via structure is provided that enables low resistance via connection for backside power distribution by skipping one or more intermediate backside metal layers.
Nicholas Anthony Lanzillo, Ruilong Xie, Huai Huang, Hosadurga Shobha, Lawrence A. Clevenger
Filed: 10 Jun 22
Utility
g9ugeqwv6v3tw5h9rppatay9cunoo2293x1y0aw7mgaaky1ow
14 Dec 23
An approach provides a semiconductor structure with one or more rectangular or square-shaped contact vias in a semiconductor material.
Kangguo Cheng, Ruilong Xie, Julien Frougier, Min Gyu Sung, CHANRO PARK
Filed: 13 Jun 22
Utility
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14 Dec 23
A semiconductor device is provided.
Brent A. Anderson, Ruilong Xie, Albert M. Young, Albert M. Chu
Filed: 10 Jun 22
Utility
rp2leswbyts1wtgvsf4slxco8vxs 5ic
14 Dec 23
A semiconductor device is provided.
Sanjay C. Mehta, Ruilong Xie, Shogo Mochizuki, Min Gyu Sung
Filed: 10 Jun 22
Utility
pgfmshlszj2pwjm3ubey439q6j6iaxl7v3k7zt5iyo0hwafu
14 Dec 23
A uniform moon-shaped bottom spacer for a VTFET device is provided utilizing a replacement bottom spacer that is epitaxially grown above a bottom source/drain region.
Ruilong Xie, Chen Zhang, Julien Frougier, Alexander Reznicek, SHOGO MOCHIZUKI
Filed: 10 Aug 23
Utility
zissnu3201e3g5cx19d8gf3dwwmuxamiz4foqys55sivc03inegrfqqu45r4
14 Dec 23
A semiconductor device and formation thereof.
Min Gyu Sung, Ruilong Xie, Heng Wu, Julien Frougier
Filed: 10 Jun 22
Utility
scvfmrp5i6t4pc8sj0duiayi5bw9fbgxx7yqcwkr92e3wl9lx
14 Dec 23
An apparatus comprises one or more A-type resistance segments, wherein each A-type resistance segment comprises one or more A-type switches, at least one A-type linear resistor coupled to the one or more A-type switches, at least one A-type tunable header unit coupled to the one or more A-type switches, and at least one A-type tunable footer unit coupled to the one or more A-type switches; one or more B-type resistance segments, wherein each B-type resistance segment comprises one or more B-type switches, at least one B-type linear resistor coupled to at least a proper subset of the one or more B-type switches, at least one B-type tunable header unit coupled to the one or more B-type switches, and at least one B-type tunable footer unit coupled to the one or more B-type switches; and wherein second terminals of the A-type linear resistors and the B-type linear resistors are coupled together.
Martin Cochet, Marcel A. Kossel, John Francis Bulzacchelli, Timothy O. Dickson, Zeynep Toprak-Deniz
Filed: 13 Jun 22