61485 patents
Page 4 of 3075
Utility
Semiconductor Package
18 Jan 24
A semiconductor package comprises a base substrate, a first semiconductor chip on the base substrate, a first dam structure which overlaps a corner of the first semiconductor chip from a plan view and is placed on the base substrate and a first fillet layer which is placed vertically between the base substrate and the first semiconductor chip, and vertically between the first dam structure and the first semiconductor chip.
Jung Min KO, Hyeon Jun SONG, Hyeong Mun KANG, Tae Hyeong KIM, Young Woo LIM
Filed: 21 Jun 23
Utility
Semiconductor Device Including Two-dimensional Material and Method of Manufacturing the Same
18 Jan 24
A semiconductor device may include a two-dimensional material layer, one or more metal islands on the two-dimensional material layer, and a metal layer covering the metal islands on the two-dimensional material layer.
Duseop YOON, Junyoung Kwon, Minsu Seol, Minseok Yoo, Kyung-Eun Byun
Filed: 11 Jan 23
Utility
Semiconductor Package
18 Jan 24
A semiconductor package may include: a substrate; an upper chip disposed on the substrate; a first lower semiconductor chip disposed between the substrate and the upper chip, and electrically connected to the substrate; a second lower semiconductor chip disposed between the substrate and the upper chip, and electrically connected to the substrate; and an interposer chip disposed between the substrate and the upper chip, wherein the interposer chip includes a through-via electrically connecting the upper chip to the substrate, wherein the first lower semiconductor chip is electrically connected to the upper chip, wherein a lower surface of the upper chip is disposed on an upper surface of the first lower semiconductor chip, and wherein the second lower semiconductor chip is electrically connected to the upper chip, wherein a lower surface of the upper chip is disposed on an upper surface of the second lower semiconductor chip.
Taeyoung LEE
Filed: 3 Jul 23
Utility
Semiconductor Device and a Method of Manufacturing the Same
18 Jan 24
A semiconductor device includes a substrate including an active pattern, a channel pattern including a plurality of semiconductor patterns spaced apart from each other and vertically stacked, on the active pattern, a source/drain pattern connected to the plurality of semiconductor patterns, and a gate electrode including a first inner electrode provided below a first semiconductor pattern among the plurality of semiconductor patterns, on the plurality of semiconductor patterns, and a second inner electrode provided above the first semiconductor pattern, the first semiconductor pattern includes a first portion adjacent to the first inner electrode, a second portion adjacent to the second inner electrode, and a third portion between the first and second portions, the first semiconductor pattern includes a dopant having an atomic weight greater than that of silicon, and a dopant concentration of the third portion is smaller than a dopant concentration of each of the first and second portions.
Sangmoon LEE, Jinbum KIM, Dongwoo KIM, Hyojin KIM, Yongjun NAM, Ingeon HWANG
Filed: 28 Feb 23
Utility
Semiconductor Device and Method of Manufacturing the Same
18 Jan 24
A semiconductor device having active regions including a first active region and a second active region parallel to each other and respectively extending on a substrate in a first horizontal direction, a field region defining the active regions, a first insulating structure extending in the first horizontal direction on the field region, a gate structure extending, in a second horizontal direction, to intersect the active regions and the first insulating structure, source/drain regions disposed on at least one side of the gate structure, the source/drain regions including first source/drain regions on the first active region and second source/drain regions on the second active region, and a common contact plug on a first side of the gate structure and connected to the first and second source/drain regions opposing each other.
Yoonjeong KIM, Yeongmin JEON, Hyewon JANG
Filed: 2 Feb 23
Utility
Nitride Semiconductor Light Emitting Device
18 Jan 24
A nitride semiconductor light emitting device includes an active layer provided between P-type and N-type nitride semiconductor layers, a first strain reducing layer including first InGaN films and first GaN films alternately stacked between the N-type nitride semiconductor layer and the active layer, and a second strain reducing layer including a second InGaN film and a second GaN film alternately stacked between the first strain reducing layer and the active layer.
Youngjin Choi, Donggun Lee, Punjae Choi
Filed: 14 Jul 23
Utility
Display Apparatus
18 Jan 24
A display apparatus, including a circuit substrate including driver circuits and first bonding electrodes, and a pixel array on the circuit substrate and including a plurality of pixels each including first to third sub-pixels, and second bonding electrodes bonded to the first bonding electrodes, the pixel array further including, a plurality of first LED cells corresponding to the first and third sub-pixels, respectively, and each including a first conductivity-type semiconductor layer, a first active layer, and a second conductivity-type semiconductor layer, a plurality of second LED cells corresponding to the second sub-pixels, respectively, and each including the first conductivity-type semiconductor layer, a second active layer, and the second conductivity-type semiconductor layer, a first electrode extending to cover upper surfaces of the plurality of first and second LED cells and connected to the first conductivity-type semiconductor layers in common.
Jihye YEON, Hankyu SEONG, Suhyun JO, Sammook KANG, Mihyun KIM, Kyungwook HWANG, Junsik HWANG
Filed: 6 Jul 23
Utility
Sulfonimide Salts for Battery Applications
18 Jan 24
A class of sulfonimide salts for solid-state electrolytes can be synthesized based on successive SNAr reactions of fluorinated phenyl sulfonimides: Fluorinated Aryl Sulfonimide Tags (FAST).
Jeremiah Allen Johnson, Yang Shao-Horn, Robinson Anandakathir, Mao Chen, Shuting Feng, Livia Giordano, Mingjun Huang, Wenxu Zhang
Filed: 26 Jan 23
Utility
Semiconductor Devices
18 Jan 24
A semiconductor device includes a substrate, lower electrodes on the substrate, a dielectric layer covering the lower electrodes, and an upper electrode covering the dielectric layer.
Junrak CHOI, Yaejin HONG, Jinsu LEE, Hongsik CHAE
Filed: 13 Jul 23
Utility
Antenna Module and Electronic Device Including the Same
18 Jan 24
Provided is an antenna module including a first antenna patch for radiating electromagnetic energy of a first frequency band, a second antenna patch for radiating electromagnetic energy of a second frequency band different from the first frequency band, and both the first antenna patch and the second antenna patch spaced apart from a ground structure in a first direction, and a feed structure spaced apart from each of the first antenna patch and the second antenna patch, the feed structure being between the first antenna patch and the second antenna patch, the feed structure being connected to the ground structure, and the feed structure being configured to provide an RF signal to the first antenna patch and second antenna patch, and the feed structure including a horizontal feed line extending in a second direction intersecting the first direction, and a vertical feed line extending in the first direction.
Doo Hyun YANG, Doo Seok CHOI, Sang Hyun BAEK, Young Ki LEE, Joon Hoi HUR
Filed: 12 Jul 23
Utility
Semiconductor Devices
18 Jan 24
A semiconductor device may include first and second channel patterns on a substrate, first and second source/drain patterns in contact respectively with the first and second channel patterns, and first and second gate electrodes respectively overlapping the first and second channel patterns.
SOOJIN JEONG, DONG IL BAE, GEUMJONG BAE, SEUNGMIN SONG, JUNGGIL YANG
Filed: 27 Sep 23
Utility
Out-of-band Blocker Removing Calibration-free Wide-band Low-noise Amplifier Structure and Method
18 Jan 24
A wide-band low-noise amplifier structure for removing an out-of-band blocker includes a transconductance pre-amplifier stage configured to convert a voltage signal into a current signal, a filter stage including a main path and an auxiliary path connected in parallel, the main path passing a first signal including all of the current signal, and the auxiliary path passing a second signal including only an out-of-band portion of the current signal, and a combination stage configured to output a third signal corresponding to a difference between the first signal and the second signal, the third signal including only an in-band portion of the current signal.
Junghwan HAN, Pillseong KANG, Juhui JEONG
Filed: 20 Jun 23
Utility
Semiconductor Device and Method of Fabricating the Same
18 Jan 24
A semiconductor device and a fabrication method thereof are disclosed.
Hyohoon BYEON, SUNGKEUN LIM, YUYEONG JO, JINYEONG JOE
Filed: 15 Mar 23
Utility
Clock Selection Method for Multiplying Delay Locked Loop
18 Jan 24
There is provided a method for generating a select signal for a multiplexer of a Multiplying Delay Locked Loop (MDLL).
Venkatasuryam Setty ISSA, Aswani Aditya Kumar TADINADA, Subba Reddy SIDDAMURTHY
Filed: 18 Apr 23
Utility
Hidden Antenna Apparatus and Vehicle Comprising Same
18 Jan 24
A hidden antenna apparatus is provided.
Yongsun SHIN, Jinu KIM, Sangbong SUNG, Jeseung OH, Dongbeom SEOL
Filed: 14 Jul 23
Utility
Electronic Device Performing High-speed Power Line Communication and Operating Method Thereof
18 Jan 24
An electronic device includes a power line communication circuit configured to perform power line communication with an external device, the power line communication circuit including: a power line switch provided between a regulator output node and a POGO output node; and a pull-up resistance provided between the POGO output node and a power supply voltage; and a processor configured to control the power line communication circuit, wherein the processor is further configured to: based on receiving a start signal instructing an initiation of high-speed communication, turn off the power line switch to block an electrical coupling between the regulator output node and the POGO output node, and perform the high-speed communication with the external device by connecting coupling the POGO output node to the power supply voltage through the pull-up resistance or connecting coupling the POGO output node to a ground voltage, based on according to output data.
Minkyu KWON, Guntak KWAK, Dongjoon KIM, Hyoungseok OH
Filed: 12 Apr 23
Utility
Electronic Device for Charging Plurality of Batteries
18 Jan 24
An electronic device for charging a plurality of batteries is provided.
Hangseok CHOI
Filed: 27 Sep 23
Utility
Electronic Device Including Housing Having Dissimilar Metals
18 Jan 24
An electronic device includes: a side bezel structure including a first body surrounding an inner space of the device, and a second body extending from the first body into the inner space and including a through hole; a plate including a support portion within the inner space; a protrusion portion extending from the support portion into the through hole, the protrusion portion being coupling to the second body and corresponding to the through hole; and a conductive adhesive member coupling the through hole and the protrusion portion, which is disposed between the through hole and the protrusion portion.
Sungduck PARK, Kwondeuk Yoon, Kitae Park, Yunho Son, Jaehoon Yoon, Cheolwoong Yoon, Youngsoo Kim, Kidoc Son, Hyunsuk Choi, Yongduk Kwon, Jongbo Kim
Filed: 1 Jun 23
Utility
Method of Providing Wireless Charging Guide and Electronic Device Performing Same
18 Jan 24
A method of providing a wireless charging guide and/or an electronic device for performing the same are provided.
Seokyoung KANG, Kawon CHEON, Jaesun SHIN, Jongwoo JUNG
Filed: 21 Jul 23
Utility
Image Encoding Method and Apparatus, and Image Decoding Method and Apparatus
18 Jan 24
Provided is a method of decoding motion information characterized in that information for determining motion-related information includes spatial information and time information, wherein the spatial information indicates a direction of spatial prediction candidates used for sub-units from among spatial prediction candidates located on a left side and an upper side of a current prediction unit, and the time information indicates a reference prediction unit of a previous picture used for prediction of the current prediction unit.
Sun-il LEE, Jung-hye MIN, Na-rae CHOI
Filed: 18 Jul 23