and Thank everyone. afternoon, you, good Mario,
$X.X TGAN's the revenue second report that of than million slightly quarter to pleased higher consensus are estimates. We current is
over supply had product revenue well in the the high-power this portion fiscal QX due product the a of our was lower to was revenue goals, long-term in we be alluded year revenue QX revenue. constraints August, While represented revenue previously line product over QX. over increase the revenue the total Product of to with continues 'XX fiscal the XX% sequentially prior of FY over and in XX% XX% to
of amidst quite macroeconomic a still with headwinds. challenging multiple environment what is this All
server our as of serving gallium more securing power parallel, continued blockchain leadership efficiency, now TGAN at easy-to-use another a X energy, systems FET have as are and products design-win to customers exemplified adopter a laptop GaN, strength in worldwide by We manufacturer shipping In our computing Fortune industrial solutions, customer. the versus high-power for higher market continuing segments. shipments XXX well is and top simple more which e-mode gaming, competing nitrate the us of laptop and recognizing multi-kilowatt
to in areas, have our successes investing these These future, a design areas we external in internally targeted plan continue in investments with partners. both and the direct been these our result of and
fiscal bringing in restrictions now in no are QX. longer expected notably XXXX, Moreover, reactors calendar additional the The us facilitate our delivered also supply are product COVID-related are challenges, online. previously capability in now existing expansions a increased our there, will the more nice calendar chain of growth wafer that reactor midst to progress in hindrance. discussed. especially We travel of output we for later to allow as in QX Japan seeing revenue 'XX And acquiring of will address with some be we further addressing a
ARPA-E IP of the program continued and bi-directional motor to very GaN X develop drives. bidirectional a X our nitride solar traditional allows GaN is single silicon-based front by microinverters a to switches. that attribute natural on unique technology applications has Transphorm and lead and to be like are replaced to in now This devices on innovation executing gallium an
industry-standard packages validated have for complements package GaN results superior existing sources. and We high-performance GaN. PQFN offering, multiple This pin-to-pin to allow both are competing PQFN the is versus with one compatibility our our most the packages in which expanded that comprehensive include industry of GaN surface-mount
over both and continuing demand key The us and challenge -- wafer front capacity is quarters X increase increased across of vector multiple us for in FY 'XX the to the our applications. next
market for this goal win companies, share. by accounts our area many softness is to our reported in is As And new mobile market increasing nitride, laptop and continuing. gallium
areas, of experiencing is presently. weakness stronger Blockchain, traditionally our one
and growth over building expect customers the in our months in our design-in or However, are electric momentum GaN, so. next server, with area. X Meanwhile, the vehicle in segments recovery while gaming addressing X-wheeler we X-wheeler, proven renewable leadership high-power the
is help it growth efforts early we to believe Asia us presence, bolstered these and the third our on QX track To in senior keep new revenue our will in environment, expanded on too address current targeted added now FY partners 'XX team. comment continue have the While and our quarter. momentum, we our
marketing the We of focusing entity to our and are pleased on report applications field Shenzhen local activities. establishment sales,
well design houses to part integrated partners independent our or seamlessly. with continue FET easy-to-use relationships also companies This ecosystem standard, be key controller or drivers nitride IDHs. deepen add can and We driven as discrete enabled of by that by and is IC as gallium
in GaN and company high anything one-stop We today, to leaders kilowatt well-known the announced hired STMicro are like new us is Onsemi, high have power to comprising in appointments, the from volume shipping best & power our be leadership programs and recently multiple Omega]. pleased to from X still both range the To low shop semiconductor TGAN internal GaN class. true of in very industry veterans, new [Alpha for power champions kilowatt knowledge, only making a
we poised for including high With expand IP our power, into high-power to and strength application-based remain strong segments. new IP,
segment we a DC-DC 'XX, FY into drivetrain for that X-wheeler base X-wheeler, multimillion areas us while about our later. dollar example, in penetrating revenue in For will with converters progress inverters. and to aim opportunities the onboard convert systematically ultimately, I auxiliary the after X-wheeler EV these chargers, talk
in remain solutions over performance leadership with portfolio, competing we benefits growing X-wheelers, while and design and fast-charger our the diverse strong areas and TGAN power, high address adapter share approval, TAM allowing of for servers Overall, and $X positioned computing, the communications, energy GaN well to backed in the gaming, vehicles, by like segment. application-based patent also billion electric X-wheelers, in X-wheelers, blockchain lower-power
will ending key for I X value some of XXXX the next September and review recap, over quarter our results planned as With challenges well FY our point beyond the proposition that execution as as TGAN's of in our strategy review expansion quarters salient the XXXX. then a of next outlined,
Moving cost-effective conversion a variety Low-power Slide applications. systems power is for wide-bandgap now. that energy reduces material a electrical Gallium on power X conversion waste, electrical of across and power compact to nitride semiconductor laptop also better and or computing automotive or inherent And semiconductors its of silicon power better newer chargers, virtue mobile by traditional silicon properties high-power fast [TILS] than carbide. enables inverters. than chargers, like is much
manufacturer, XX volts our these TGAN, is products of leading applications supplier power investments result a power pioneer The high and been a X to over in for from power. GaN applications, high-voltage continued and Transphorm kilowatts widest strength, over these has of the core semiconductor success low strategy. a range of
that IC have the partners, partners, been than blue customers, leaders Defense. the with as platform IP chip U.S. well our billion as high-performance, products by worldwide design hours X,XXX field Our market patents fundamental including of high-quality automotive-industrial and investors, XX Department over have financial partners, validated partners, manufacturing in more
members enabled differentiated electric XG is including us helping base Our that charging, team own. multibillion-dollar penetrate. vehicles core are product smart and growing we to all, GaN by a passionate things, is a addressing manufacturing among Above that high-quality offering essentially market wafer our large other and
power today conversion, with low Moving the that GaN areas. we all again, power with range high-power position a chargers inverters, power server, and to power that the differentiated that adapters Slide spans one strategy of among wide renewables from already and multibillion now. unique a core spectrum to suppliers a PV Transphorm to market tremendous platform opportunity X dollar energy in industrial, ramped blockchain, address in for and these in GaN our is market of datacom are products
charging, deliver like combination both with EV to growth And to which size, lower solutions and automotive in further continuing easy-to-use products compact and calendar faster XXXX, with X- XXXX, benefits, efficiency, with vehicles, the carbide silicon the interface XXXX. beyond solutions for and of opportunities growth TransphormGaN performance in other smaller and year weight, large easy followed in against mid- Transphorm's X-wheelers, EV are proven silicon, GaN e-mode. production by then GaN high first, efficiency systems today customer long-term the X-wheelers, electric
FET. or talk X, key today's own nitride gallium Slide thick We This of important that chain, gallium on even one normally in growing wafer supply interface, wafer that of ownership reactors. MOCVD becoming from today. safe, directly to is X used more and nitride vertically of climate. and for and GaN geopolitical easy California multiple are strength Epi we tools in production our our design control changing manufacturing GaN silicon an starts attributes is integrated These locations, the In wafers our the of with our about material Japan, advantage geographical robust, making
for yields fab quality. a the those to a show as yield site our only a factory And CMOS a same GaN contributed strategic partner. in reported high-power of match is feature the wafer financial with can GaN with recap, running has our silicon manufacturing is data products and Our factory, publicly joint venture high-quality that that
is packaging bring our OSAT partners, Transphorm we TPH with IP done in high-quality this While design.
allowing is seamless integration our used least efficiently by to example, with their in solution Last controller with but and GaN our application customers driver and who both high-power packages work customers. For products. our with the prefer GaN and to desired the effort, partners robust now of not be TO design because
from Now looks FET X, competitive various the a delivering TGAN verticals performs landscape, power the as range power, to low of power. Slide high broadest leader on Transphorm, the at one in as
market. nitride power factor the is As gallium while lower adapters is and with in low at nitride, good demands penetrating high rising companies Transphorm Many form speed power are meeting falling in gallium market addresses of notably power both, together. or and chargers, and silicon efficiency, power short the size,
benefits competing A few inherent outline Transphorm's differentiated key versus GaN. factors that
efficiency, performance our operating to and nitride all, First the at FETs. temperature superior due the of from GaN design superior losses especially gallium to lower due FET of
combo, gallium integrated existing, device in and high-power already for FET controllers of of drivers controllers. to platform and easy-to-use packages robust free, are and architecture both a due enabled, silicon integrated thermally substandard often that robust use is existing Secondly, our capable nitride literally and high-voltage drivers
the of actually is to so-called remote basically high we IC also component that a GaN. go regular FET is are used, now attempting a power, the seeing discrete ICs What some are and is to
from interface high power both and of in applications gallium Another resulted the important competing power. retribute nitride silicon-like in and field far most high-voltage only is architecture's at device proven reliability combo that our GaN coming robust in strong versus power so low lower operational -- data has least integrated
deliver For nitride, our to gallium aim on voltages. higher we also
node at market where silicon For silicon higher carbide are in R&D. certain volt the example, volts XXX challenge certainly is gaining X,XXX products already That traction will today voltage, the carbide higher power today. in and is
lower to associated to especially in high much versus as supply because as discussed it. the is proven as carbide not silicon with have This GaN does complex much previously FET cost have a and the we XX% XX% loss of is be chain
Next production, and as advantages that in Slide in talk higher about being TGAN in is customer we validated are market systems range, adopted proven performance. many with more wins verticals reliability X, today with these higher increasingly with higher FET
As GaN and a server offerings in gaming, and power, blockchain some variety XXx customer high-rel power more than you industrial can see, of applications like are renewables applications level and delivering the today systems. enable other of also the that
specified lower instead features similarly two to or GaN GaN and do of why in GaN inherent build? Again, the like More XX% e-mode benefit single applications. effectively due loss device use platform, which to competing for power certain we a This higher power. scalability devices high is resistance like of than
because the the the deliver impact very efficiency can higher a carbon of of and energy footprint carbon energy. in it significant Where X-kilowatt device, just hundred finally, single from for, system a higher advantage footprint. is gallium And depending say, very power, several your hour can XXX meaningful higher on and X% gain, over kilowatt nitride source well a pounds on a systems save
on show me X. Let Slide
and of X ongoing design in a that chargers. the manufacturers. this now With top one are XXX variety worldwide adopters of lower we these watts to laptop we XX of shipping in watts customers XX-odd TGAN the selected range, wins to spans have power benefits, that have Out
Some new XX-watt this show and them examples and here. nodes, we are of quarter the at XXX-watt wins
Moving Slide X. on to on power high
energy for our the content. higher and a emphasized, we As very and impact, for high-power large space Transphorm, higher importantly, GaN higher is customers, market savings again, for very semiconductor
examples working offerings design-ins, gaining which are below. Gen are Our Gen with of we many momentum, now about in X XX are and some and shown X production,
Transphorm to our gallium In XU to like by enabled medical efficiency architecture the by diverse XU reduction with and was center gaming, way, applications. XX% applications from patented totem-pole data blockchain where GaN form its other and first power, titanium-related used being UPS, server power where now show nitride factor industrial, many. a
and this featured efficiency, endorse also use third-party customers of foundation certain reliability. on As enabled in of all is ease performance, of the and teardowns,
anxiety to about, of massive the EV that low now addressing Slide charging, things that While of by range power growth range. there delivered high-power in losses performance lower of EVs, TransphormGaN fundamental I enabling faster is enables results we present power a -- XX a high issues long-term reduced power and as loss, heat with higher like continued that GaN GaN very and ultimately here, and significant on show size talked of generation opportunity density applications continue the performance we
industrial in today Transphorm has high-power products commercial with qualified various proven AEC in X our automotive and already or ramped solution Gen applications reliability. market the field with
showing efficiency requiring a early in carbide the multi-kilowatt Our architecture, results range example. designs on GaN any already in for nitride vertical similar and like delivered structures, simple higher to R&D silicon today built not or gallium has platform fancy X,XXX-volt even
working conservatively. power auxiliary DC-AC opening Like converters talked opportunities we vehicle X-wheeler in can opportunities EV with adoption charging the The vehicle, first that we XXXX, today's segment accessible solution. that electric $XXX content sweet accelerate EV are spot chargers, that falls main after the inverters, drivetrain X-wheeler the the GaN inverter remain actually of to August, specific with high-power are to our and areas focused today onboard into triple GaN in we the and DC-DC the 'XX, on, in off-grid per up
X,XXX to EV the be today XXX-volt devices battery volts full XXX-volt future, future higher in key and enable voltage, addressing all aim We to vehicles to address including transform market, with in slots.
And gallium like X,XXX-volt showed generate better customers. carbide. Our this I attention nitride performance has to from now has demo before results EV than started silicon
is XXXX. onboard calendar also billion For end worth the market, address a to addressing approaches charger. of to term of X- attractive variety we near TAM year This that and including X-wheeler, the opportunities, by charging for opportunities are Transphorm unlock of a more $X very directly
holistic energy Transphorm, not impact Transphorm's the is the Slide we nitride the Looking the one of gallium offering, next point tremendous in amount at several can be that decades. together and wanted but out of ESG of ecosystem over just saved key nitride-based to picture a XX, gallium This in one power.
communications, Our gallium bottoms-up terawatt multi-XXX industrial e-mobility potential segments. internal is analysis that of shows computing in renewables, hours and savings with power nitride achievable and
XX% high this we in growth. our continued now, we where on Slide revenue in execution September XX to our vectors are today, key performance at power leadership Next, With move of quarter and drive that quarter and have supply $X.X our exceeded modestly that of of chain million revenues, consensus we of capacity some we and the while in product revenues, faced. also power, estimates, penetration low with million $X.X continued challenges delivering dealing including product
added the in quarter. total of our performance production Out by to for lower this wins high customer. GaN around total segment, plus and over with of ease XX driven BOM, these, design XX We use, facilitating our new materials, both new design FET's adopter low now transitioning bringing X of are XX, wins, power to the production, in bill a
XX-plus Tier to a worldwide this We shipping manufacturer. In we a moving top to X quarter, including over are production segment, bringing manufacturer, XX production, the plus laptop design XX-plus in a to laptop also design also high-power the won total wins now we X added with this quarter. and at X
of available nitride, are or us reference all gallium high to helped at easily kits the traction. continue which for power, evaluation with our available our has other thermally and availability not Here, robust packages,
into by potential EV in expand segments, and X-wheeler market continue XXXX. adoption to notably leverage CY EV the revenue plan addressing this more We with to accelerating
this target products started several is segment the with compatible in solutions as making customers discussions now. designs. higher packages are use design-in PQFN progress these required sources early are customers pin-to-pin enable in multiple comfort with TGAN of and of to allowing sampling our them We reference in while evaluation some performing We that GaN
Gan our already nitride. performance packages that gallium have our with packages higher complement Super platform PQFN delivering in These other than production both been performance and
and Epi and more now, between We capacity. capacity seamless existing reactor California our internal in improved by of and significantly pending our acquiring wafer some procurement made part getting end, Epi-wafer is the progress Japan items. in online new hardware To some reactor enabled Japan capacity this have travel of of
evaluating are in growth factory JV 'XX for beyond. incremental our FY investments We also and
For for our have place there capacity packaging, as as more customers. flexibility -- and products, products our we previously package we as space well in high-power mentioned, this will to SKUs be sufficient charger adopter time and our broaden PQFN SKUs to adding at offering application emphasis
semiconductor Our near-term supply squarely the end emphasis macroeconomic issues on on capacity and generation in chain with remain remains expansion to as well. business ahead some management areas and focus of and of demand equal diversification target application our challenging
move As we Slide are business. strategic initiatives government XX, to key partnership for and our
adding to acquired recently XXXX, end track X of XXXX. of the our aim reactors bringing we fully capacity, Epi reactor the with more CY We new Epi-wafer be for that and on targeted per online by but are plan, in half second CY to doubling now X capacity
time, Corporation be to especially expansion partnership track for on for Global in Wafers demand lead the We ahead long-term securing the the scenarios aggressive are capacity making these and its of even is more as and model. allows growth release well and as on Epi due production. future our qualifying long The to times well side equipment investments to us
JV and for plans incremental we FY partner to fab, in year, wafer the investing align capacity On next are with our continue XXXX.
products design development in in applications, and $X to our we on firstly, the customer for Asia partnerships supply. executing end area, segment X-wheeler milestone represents XXXX in focus on with next addressing strategy automotive focus respect for is same. where In remain reference Nexperia here for our vehicles and GaN wafer of The funding our high-power we Yaskawa and the partners, With the TAM continued the solutions with by nearer-term Epi This CY year. focus the the qualified now strong, robotics revenues multi-kilowatt our billion penetration range. to are on on a the roughly are segment own developing for accelerate electric
efforts for opportunities in mid converters, term, X-wheeler DC-DC onboard investigative and long to The started charger, the the auxiliary at small converters inverters on XX-kilowatt drivetrain focused range.
billing our Navy side, On was fiscal million. around $X.X the on the government program QX
now We the program in as a current program follow-on targeting in wraps QX QX. are fiscal up fiscal
XXXX are bidirectional volts a about, R&D small talked ARPA-E on innovative We program. switch, and I by unique lateral under a continuing also a new GaN, like the the like enabled topology nodes
are All portion and in for manufacturing position significant a year been in core long-term our of for [indiscernible] towards funding the capacity these spot Epi our be tackle quarters, we broader to in act the United also calendar model, our near-term we submissions a that and positioned the are have With QX wafer past to outreach. aggressively States, worldwide to progress CHIPS all, remain sales aiming 'XX. in both expected few challenging expansion headwinds semiconductor and industry and increasing aided by
areas. TGAN's key in X focus remains
road First, capacity lower staying with winning our leadership up expansion chain generating year 'XX, supply of high keeping to next and the wins ahead in well execution starting opportunities. third, And the key both product as demand, in of demand, And and CY power in expanding power continued then marquee GaN on end X-wheeler, diversifying management, EV as and our and bring by and adapter partnerships. charger segment. map X-wheeler
here The initiatives revenue to expected are resume the FY allow to and that emerge into and in going outlined forward quarter have stronger us third sequential we XXXX. then strategy growth
to walk financials through you to detail. With our that, you. in Thank over over Cameron
