593 patents
Page 13 of 30
Utility
Low noise silicon germanium image sensor
17 May 22
Low noise silicon-germanium (SiGe) image sensor.
Mamoru Iesaka, Woon Il Choi, Sohei Manabe
Filed: 30 Apr 20
Utility
Lens-array imager
10 May 22
A lens-array imager includes lenses Lm forming a lens array having a pitch dx, a pixel array including pixel-array regions Rm, and apertured baffle-layers therebetween; m={0, 1, 2, . . . }.
Regis Fan
Filed: 30 Apr 20
Utility
Image sensor and electronic device
10 May 22
An image sensor and an electronic device are disclosed.
Jinhua Rao, Haibo Xiao
Filed: 3 Aug 20
Utility
Pixel array with isolated pixels
10 May 22
A pixel array includes a semiconductor substrate, a plurality of isolation layer segments, and a plurality of photodiodes.
Qin Wang, Gang Chen
Filed: 22 Aug 19
Utility
Method and structure to improve image sensor crosstalk
10 May 22
Image sensors include a substrate material having a plurality of small photodiodes (SPDs) and a plurality of large photodiodes (LPDs) disposed therein.
Yuanliang Liu, Bill Phan, Duli Mao, Alireza Bonakdar
Filed: 27 Dec 19
Utility
Dark Current Calibration Method and Associated Pixel Circuitry
5 May 22
Image sensors capable of dark current calibration and associated circuits are disclosed herein.
Keiji Mabuchi
Filed: 2 Nov 20
Utility
Image sensors with phase detection auto-focus pixels
3 May 22
An image sensor pixel array comprises a plurality of image pixel units to gather image information and a plurality of phase detection auto-focus (PDAF) pixel units to gather phase information.
Chin Poh Pang, Chen-Wei Lu, Shao-Fan Kao, Chun-Yung Ai, Yin Qian, Dyson Tai, Qingwei Shan, Lindsay Grant
Filed: 10 Oct 19
Utility
Diffractive optical elements made of conductive materials
3 May 22
A diffractive optical element (DOE) comprises a first part comprising a first transparent non-conductive base and a first transparent conductive layer disposed on the first transparent non-conductive base and a second part comprising a second transparent non-conductive base and a second transparent conductive layer disposed on the second transparent non-conductive base.
Chun-Sheng Fan, Wei-Feng Lin
Filed: 4 Jun 19
Utility
Pointed-trench Pixel-array Substrate and Associated Fabrication Method
28 Apr 22
A pointed-trench pixel-array substrate includes a floating diffusion region and a photodiode region formed in a semiconductor substrate.
Hui ZANG, Gang CHEN
Filed: 26 Oct 20
Utility
Pixel-array Substrate and Associated Method
28 Apr 22
A pixel-array substrate includes a floating diffusion region and a first photodiode formed in a semiconductor substrate.
Hui ZANG, Gang CHEN
Filed: 26 Oct 20
Utility
Fully Buried Color Filter Array of Image Sensor
14 Apr 22
An image sensor includes a substrate.
Gang Chen, Yuanmei Zheng, Qin Wang, Cunyu Yang, Guannan Chen, Duli Mao, Dyson H. Tai, Lindsay Alexander Grant
Filed: 21 Dec 21
Utility
Pixel Formation Method
14 Apr 22
A method for forming a pixel includes forming, in a semiconductor substrate, a wide trench having an upper depth with respect to a planar top surface of the semiconductor substrate.
Hui ZANG, Gang CHEN
Filed: 20 Dec 21
Utility
Method of Forming Shallow Trench Isolation (Sti) Structure for Suppressing Dark Current
14 Apr 22
A method of fabricating a target shallow trench isolation (STI) structure between devices in a wafer-level image sensor having a large number of pixels includes etching a trench, the trench having a greater depth and width than a target STI structure and epitaxially growing the substrate material in the trench for a length of time necessary to provide the target depth and width of the isolation structure.
Seong Yeol Mun
Filed: 22 Dec 21
Utility
Column amplifier capacitor switch circuit to adjust analog gain
29 Mar 22
A pixel cell readout circuit includes an amplifier and a capacitor switch circuit that includes a first routing path coupled to an input of the amplifier.
Hiroaki Ebihara
Filed: 18 Dec 20
Utility
Image sensor with reduced petal flare
29 Mar 22
An image sensor includes a substrate material, an array of the color filters, an array of waveguides and spacers.
Alireza Bonakdar, Zhiqiang Lin
Filed: 6 Sep 19
Utility
Shallow trench isolation (STI) structure for CMOS image sensor
29 Mar 22
A shallow trench isolation (STI) structure and method of fabrication includes a two-step epitaxial growth process.
Seong Yeol Mun
Filed: 21 Jan 20
Utility
Shallow trench isolation (STI) structure for suppressing dark current and method of forming
22 Mar 22
A method of fabricating a target shallow trench isolation (STI) structure between devices in a wafer-level image sensor having a large number of pixels includes etching a trench, the trench having a greater depth and width than a target STI structure and epitaxially growing the substrate material in the trench for a length of time necessary to provide the target depth and width of the isolation structure.
Seong Yeol Mun
Filed: 21 Jan 20
Utility
Pixel, associated image sensor, and method
22 Mar 22
A pixel includes a semiconductor substrate, an upper surface thereof forming a trench having a trench depth relative to a planar region of the upper surface surrounding the trench, and in a plane perpendicular to the planar region; an upper width between the planar region and an upper depth that is less than the trench depth; and a lower width, between the upper depth and the trench depth, that is less than the upper width.
Hui Zang, Gang Chen
Filed: 11 Dec 19
Utility
Image sensor with shifted color filter array pattern and bit line pairs
22 Mar 22
An imaging device includes groupings of photodiodes having four photodiodes.
Qingfei Chen, Rui Wang, Wei Wei Wang, Zhiyong Zhan, Xin Wang, Qingwei Shan, Kenny Geng
Filed: 22 Apr 20
Utility
Structure light module using vertical cavity surface emitting laser array and folding optical element
22 Mar 22
A structure light module comprises: a VCSEL substrate comprising a VCSEL array comprising a plurality of individual VCSELs; a first spacer disposed on the VCSEL substrate; a first wafer level lens comprising a glass substrate and at least a replicated lens on a first surface of the glass substrate disposed on the first spacer; a FOE disposed on the first wafer level lens; a second spacer disposes on the FOE; a second wafer level lens comprising a glass substrate and at least a replicated lens on a first surface of the glass substrate disposed on the second spacer; a third spacer disposed on the second wafer level lens; a DOE disposed on the third spacer, where a structure light is projected from the DOE on a target surface for 3D imaging.
Wei-Ping Chen, Tsung-Wei Wan, Jau-Jan Deng
Filed: 4 Sep 18