593 patents
Page 14 of 30
Utility
Image Sensor Package
10 Mar 22
A method of image sensor package fabrication includes forming a recess in a transparent substrate, depositing conductive traces in the recess, inserting an image sensor in the recess so that the image sensor is positioned in the recess to receive light through the transparent substrate, and inserting a circuit board in the recess so that the image sensor is positioned between the transparent substrate and the circuit board.
Wei-Feng Lin, Ying-Chih Kuo, Ying Chung
Filed: 18 Nov 21
Utility
Image Sensor with Voltage Supply Grid Clamping
10 Mar 22
An image sensing device includes an image sensing circuit, a voltage supply grid, bitlines, and a control circuit.
Chengcheng Xu, Rui Wang, Bi Yuan, Liang Zuo
Filed: 19 Nov 21
Utility
Sample and Hold Switch Driver Circuitry with Slope Control
10 Mar 22
A switch driver circuit includes a plurality of pullup transistors.
Zhe Gao, Ling Fu, Yu-Shen Yang, Tiejun Dai
Filed: 18 Nov 21
Utility
Wide dynamic range image sensor with global shutter
8 Mar 22
An image sensor includes a photodiode disposed in a semiconductor material to generate image charge in response to incident light, and a first transfer gate is coupled to the photodiode to extract image charge from the photodiode in response to a first transfer signal.
Sohei Manabe, Keiji Mabuchi
Filed: 17 Mar 21
Utility
Image sensor with fully depleted silicon on insulator substrate
1 Mar 22
A fully depleted silicon on insulator (FDSOI) is employed to reduce diffusion leakage (e.g., gate induced drain leakage, junction leakage, etc.) associated with the diffusion regions of a pixel cell.
Seong Yeol Mun
Filed: 30 Dec 19
Utility
Method and Image Sensor with Vertical Transfer Gate and Buried Backside-illuminated Photodiodes
24 Feb 22
A photodiode array has buried photodiodes and vertical selection transistors.
Hui ZANG, Gang CHEN
Filed: 18 Aug 20
Utility
Image Sensor with Through Silicon Fin Transfer Gate
24 Feb 22
A device includes a photodiode, a floating diffusion region, a transfer gate, and a channel region.
Qin Wang, Gang Chen
Filed: 20 Aug 20
Utility
Image Sensor with Through Silicon Fin Transfer Gate
24 Feb 22
A device includes a photodiode, a floating diffusion region, a transfer gate, and a channel region.
Qin Wang, Gang Chen
Filed: 20 Aug 20
Utility
Cell Deep Trench Isolation Pyramid Structures for Cmos Image Sensors
17 Feb 22
A pixel cell includes a photodiode disposed proximate to a front side of a semiconductor layer to generate image charge in response to incident light directed through a backside of the semiconductor layer.
Hui Zang, Gang Chen, Chao Niu, Zhiqiang Lin
Filed: 13 Aug 20
Utility
Image Sensor with Vertical Transfer Gate and Square Reset and Source Follower Layout
17 Feb 22
A CMOS image sensor has an array of photodiode cells, the photodiode cells each include four buried photodiodes coupled by vertical transfer gate transistors to a single floating node diffusion.
Hui ZANG, Gang CHEN
Filed: 17 Aug 20
Utility
Switching techniques for fast voltage settling in image sensors
15 Feb 22
Switching techniques for fast voltage settling in image sensors are described.
Tiejun Dai, Zhe Gao, Ling Fu
Filed: 29 Sep 20
Utility
Image sensor with shared microlens
15 Feb 22
An image sensor includes a plurality of photodiodes, a plurality of color filters, and a plurality of microlenses.
Chin Poh Pang, Guansong Liu, Xiaodong Yang, Boyang Zhang, Hongjun Li, Da Meng
Filed: 11 Dec 19
Utility
Deep trench isolation (DTI) structure for CMOS image sensor
8 Feb 22
A semiconductor structure for a CMOS image sensor includes a semiconductor substrate having a first side and a second side.
Hui Zang, Gang Chen
Filed: 19 Dec 19
Utility
Fully buried color filter array of image sensor
8 Feb 22
An image sensor includes a substrate.
Gang Chen, Yuanwei Zheng, Qin Wang, Cunyu Yang, Guannan Chen, Duli Mao, Dyson H. Tai, Lindsay Alexander Grant
Filed: 13 Aug 19
Utility
Image Sensor with Subtractive Color Filter Pattern
3 Feb 22
An image sensor includes a photodiode array and a color filter array optically aligned with the photodiode array.
Chen-Wei Lu, Yin Qian, Eiichi Funatsu, Jin Li
Filed: 3 Aug 20
Utility
Hybrid CMOS image sensor with event driven sensing
1 Feb 22
An image sensor includes a source follower coupled to a photodiode to generate an image signal responsive to photogenerated charge.
Zhe Gao, Tiejun Dai
Filed: 29 Apr 20
Utility
Column amplifier reset circuit
1 Feb 22
An amplifier circuit for use in an image sensor includes a common source amplifier coupled to receive an input signal representative of an image charge from a pixel cell of the image sensor.
Hiroaki Ebihara, Zheng Yang
Filed: 14 Jun 19
Utility
Image sensor with capacitor randomization for column gain
1 Feb 22
A pixel cell readout circuit includes a bitline input stage coupled to a bitline to receive an image signal from a pixel cell.
Hiroaki Ebihara, Rui Wang, John Brummer, Shan Chen
Filed: 12 Jun 20
Utility
Image sensor with partially encapsulating attenuation layer
25 Jan 22
A pixel cell includes a first photodiode, a second photodiode, a first deep trench isolation region, a second deep trench isolation region, a buffer oxide layer, and a light attenuation layer.
Yuanliang Liu, Bill Phan, Duli Mao
Filed: 30 Dec 19
Utility
Metal routing in image sensor using hybrid bonding
25 Jan 22
A method of routing electrical connections in a wafer-on-wafer structure comprises, bonding a metal bonding pad of a first wafer to a metal bonding pad of a second wafer; bonding first wafer to the second wafer with a material different from the metal bonding pads; forming metal interconnect structures connecting the metal bonding pad of the first wafer to a first device disposed within a first and second side of the first wafer; and forming metal interconnect structures connecting the metal bonding pad of the second wafer to a second and third devices disposed within the second wafer, to connect the first device to the second and third devices through the metal bonding pads, wherein the electrical connections of the devices between the first and second wafers do not have a through-via that passes completely through the first or the second wafer.
Gang G. Chen, Shiyu Sun
Filed: 12 Jun 20