37 patents
Page 2 of 2
Utility
SiC SUBSTRATE, SiC EPITAXIAL SUBSTRATE, SiC INGOT AND PRODUCTION METHODS THEREOF
8 Sep 22
The present invention addresses the problem of providing a novel technology which enables the achievement of a high-quality SiC substrate, a high-quality SiC epitaxial substrate, and a high-quality SiC ingot.
Tadaaki KANEKO
Filed: 5 Aug 20
Utility
METHOD FOR MANUFACTURING SiC SUBSTRATE
8 Sep 22
An object to be solved by the present invention is to provide a new technology for producing a SiC substrate in which strain is removed and capable of achieving a flat surface as flat as a surface that has been subjected to CMP.
Masatake NAGAYA, Tadaaki KANEKO
Filed: 5 Aug 20
Utility
Container Made of Sic
18 Aug 22
Disclosed is a SiC container (3) in which Si vapor and C vapor are generated in the internal space during the heat treatment.
Tadaaki Kaneko, Yasunori Kutsuma, Koji Ashida, Ryo Hashimoto
Filed: 2 May 22
Utility
Manufacturing Device for Sic Semiconductor Substrate
18 Aug 22
A manufacturing device of SiC semiconductor substrates includes a SiC container (3) in which Si vapor and C vapor are generated in the internal space during the heat treatment, and a high-temperature vacuum furnace (11) capable of heating the SiC container in Si atmosphere.
Tadaaki Kaneko, Yasunori Kutsuma, Koji Ashida, Ryo Hashimoto
Filed: 2 May 22
Utility
Method of Manufacturing Semiconductor Substrate, Manufacturing Apparatus Therefor, and Epitaxial Growth Method
14 Jul 22
The purpose of the present invention is to provide a novel method and apparatus of manufacturing a semiconductor substrate.
Tadaaki KANEKO
Filed: 24 Apr 20
Utility
Vehicle Wheel and Resonance Reducer
16 Jun 22
A resonator is engaged with an outer circumferential surface of a rim of a wheel so as to be fixed to the outer circumferential surface.
Yuho Furumori, Tsukasa Tachino, Takashi Koyama
Filed: 25 May 20
Utility
Device for Manufacturing Semiconductor Substrate Comprising Temperature Gradient Inversion Means and Method for Manufacturing Semiconductor Substrate
16 Jun 22
Provided are a method for etching and growing a semiconductor substrate in the same device system, and a device therefor.
Tadaaki KANEKO
Filed: 25 Mar 20
Utility
Semiconductor Substrate Manufacturing Device Applicable to Large-diameter Semiconductor Substrate
16 Jun 22
Provided is a semiconductor substrate manufacturing device which is capable of uniformly heating the surface of a semiconductor substrate that has a relatively large diameter or major axis.
Tadaaki KANEKO
Filed: 25 Mar 20
Utility
METHOD AND APPARATUS FOR PRODUCING SiC SUBSTRATE
9 Jun 22
An apparatus for producing an SiC substrate, by which an SiC substrate having a thin base substrate layer is able to be produced, while suppressing deformation or breakage, includes a main container which is capable of containing an SiC base substrate, and which produces a vapor pressure of a vapor-phase species containing elemental Si and a vapor-phase species containing elemental C within the internal space by means of heating; and a heating furnace which contains the main container and heats the main container so as to form a temperature gradient, while producing a vapor pressure of a vapor-phase species containing elemental Si within the internal space.
Tadaaki KANEKO, Natsuki YOSHIDA, Kazufumi AOKI
Filed: 3 Mar 20
Utility
METHOD AND DEVICE FOR MANUFACTURING SiC SUBSTRATE, AND METHOD FOR REDUCING MACRO-STEP BUNCHING OF SiC SUBSTRATE
9 Jun 22
A device for manufacturing a SiC substrate, in which formation of macro-step bunching is suppressed, comprises: a main body container that is capable of accommodating a SiC substrate and generates, by heating, a vapor pressure of gaseous species containing Si elements and gaseous species containing C elements, in an internal space; and a heating furnace that accommodates the main body container and performs heating so that a vapor pressure of the gaseous species containing Si elements is generated and a temperature gradient is formed, wherein the main body container has an etching space S1 and a Si vapor supply source capable of supplying Si vapor into the main body container, the etching space S1 being formed by making the SiC substrate face a portion of the main body container arranged on a lower-temperature side of the temperature gradient while the SiC substrate is disposed on a higher-temperature side of the temperature gradient.
Tadaaki KANEKO, Natsuki YOSHIDA, Kazufumi AOKI
Filed: 3 Mar 20
Utility
SiC SUBSTRATE MANUFACTURING METHOD AND MANUFACTURING DEVICE, AND METHOD FOR REDUCING WORK-AFFECTED LAYER IN SiC SUBSTRATE
9 Jun 22
A device for manufacturing a SiC substrate, in which the occurrence of a work-affected layer is reduced, or from which a work-affected layer is removed, comprises: a main container which can accommodate a SiC substrate and which generates, by heating, a vapor pressure of a vapor-phase species including elemental Si and a vapor-phase species including elemental C in an internal space; and a heating furnace for accommodating the main container, generating a vapor pressure of the vapor-phase species including elemental Si in the internal space, and heating so that a temperature gradient is formed; the main container having an etching space formed by causing a portion of the main container disposed on the low-temperature side of the temperature gradient and the SiC substrate to face each other in a state in which the SiC substrate is disposed on the high-temperature side of the temperature gradient.
Tadaaki KANEKO, Natsuki YOSHIDA, Kazufumi AOKI
Filed: 3 Mar 20
Utility
SiC EPITAXIAL SUBSTRATE MANUFACTURING METHOD AND MANUFACTURING DEVICE THEREFOR
9 Jun 22
The present invention addresses the problem of providing a novel SiC epitaxial substrate manufacturing method and manufacturing device therefor.
Tadaaki KANEKO
Filed: 3 Mar 20
Utility
Electric Power System, Server, Charge-and-discharge Controller, and Power Demand-and-supply Adjustment Method
17 Mar 22
An electric power system includes a plurality of power adjustment resources electrically connectable to a power grid, and a management device configured to manage the power adjustment resources.
Yusuke HORII, Masato EHARA, Shunsuke KOBUNA, Akinori MORISHIMA, Ryota SOSHINO
Filed: 23 Aug 21
Utility
Sic Semiconductor Substrate, Method for Manufacturing Same, and Device for Manufacturing Same
23 Dec 21
An object of the present invention is to provide a SiC semiconductor substrate capable of reducing a density of basal plane dislocations (BPD) in a growth layer, a manufacturing method thereof, and a manufacturing device thereof.
Tadaaki KANEKO, Koji ASHIDA, Tomoya IHARA, Daichi DOJIMA
Filed: 5 Nov 19
Utility
Sic Semiconductor Substrate, And, Production Method Therefor and Production Device Therefor
23 Dec 21
An object of the present invention is to provide a SiC semiconductor substrate having a growth layer with a controlled step height, a manufacturing method thereof, and a manufacturing device thereof.
Tadaaki KANEKO, Koji ASHIDA, Tomoya IHARA, Daichi DOJIMA
Filed: 5 Nov 19
Utility
SiC WAFER AND MANUFACTURING METHOD FOR SiC WAFER
30 Sep 21
Masatake NAGAYA, Takahiro KANDA, Takeshi OKAMOTO, Satoshi TORIMI, Satoru NOGAMI, Makoto KITABATAKE
Filed: 24 Jul 19
Utility
Ising Solver System
16 Sep 20
In an ising solver system, change of a capacitated variable in an ising solver is able to be described by introducing an interaction between QUBO variables depending on a relation between a departure point of a first city among multiple cities and an arrival point of a second city among the multiple cities, and a concept of an inter-city travel step number for travel between the multiple cities is expressed by describing the change.
Hirotaka IRIE, Akira MIKI, Masayoshi TERABE, Toru AWASHIMA, Shunsuke TAKAHASHI, Wongpaisarnsin GORAGOT, Shiowattana DUNGJADE
Filed: 11 Mar 20