89 patents
Page 3 of 5
Utility
Determining bias configuration for write operations in memory to improve device performance during normal operation as well as to improve the effectiveness of testing routines
16 Feb 21
Techniques and circuits for testing and configuring bias voltage or bias current for write operations in memory devices are presented.
Jason Janesky, Syed M. Alam, Dimitri Houssameddine, Mark Deherrera
Filed: 19 Mar 19
Utility
Magnetoresistive stack with seed region and method of manufacturing the same
2 Feb 21
A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s).
Jijun Sun, Sanjeev Aggarwal, Han-Jong Chia, Jon M. Slaughter, Renu Whig
Filed: 8 May 20
Utility
Magnetoresistive stacks with an unpinned, fixed synthetic anti-ferromagnetic structure and methods of manufacturing thereof
19 Jan 21
A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region.
Srinivas V. Pietambaram, Bengt J. Akerman, Renu Whig, Jason A. Janesky, Nicholas D. Rizzo, Jon M. Slaughter
Filed: 2 Jun 20
Utility
Magnetoresistive devices and methods therefor
4 Jan 21
A method of manufacturing a magnetoresistive device may include forming a first ferromagnetic region, forming an intermediate region on or above the first ferromagnetic region.
Jijun Sun
Filed: 9 Apr 19
Utility
Method of fabricating a magnetoresistive bit from a magnetoresistive stack
4 Jan 21
A method of fabricating a magnetoresistive bit from a magnetoresistive stack includes (a) etching through at least a portion of a thickness of the surface region to create a first set of exposed areas in the form of multiple strips extending in a first direction, and (b) etching through at least a portion of a thickness of the surface region to create a second set of exposed areas in the form of multiple strips extending in a second direction.
Kerry Joseph Nagel, Sanjeev Aggarwal, Sarin A. Deshpande
Filed: 21 May 20
Utility
Dynamic security module server device and method of operating same
14 Dec 20
Disclosed herein are a dynamic security module server device for transmitting a dynamic security module to a user terminal and receiving a security management event from the user terminal, and a method of operating the dynamic security module server device.
Young Bin Ha
Filed: 11 Sep 17
Utility
Dynamic security module terminal device and method of operating same
14 Dec 20
Disclosed herein are a dynamic security module terminal device for receiving a dynamic security module and transmitting a security management event to a security server, and a method of operating the dynamic security module terminal device.
Young Bin Ha
Filed: 11 Sep 17
Utility
Method and apparatus for generating dynamic security module
14 Dec 20
Disclosed herein are a method and apparatus for generating a dynamic security module which is allocated to a user terminal so that code configured to be executed on the user terminal for security varies with execution time.
Young Bin Ha
Filed: 11 Sep 17
Utility
Methods of manufacturing integrated circuits using isotropic and anisotropic etching processes
23 Nov 20
A method of fabricating a magnetoresistive device includes etching a magnetoresistive stack using a first etching process to form one or more sidewalls, and etching the stack using a second etching process after forming the one or more sidewalls.
Sarin A. Deshpande, Jon Slaughter, Cong Hai, Hyunwoo Yang, Naganivetha Thiyagarajah, Shukai Ye
Filed: 27 Nov 18
Utility
Magnetoresistive device and method of manufacturing same
23 Nov 20
A magnetoresistive-based device and method of manufacturing a magnetoresistive-based device using one or more hard masks.
Sarin A. Deshpande, Sanjeev Aggarwal, Kerry Joseph Nagel
Filed: 10 Jul 19
Utility
Data storage in synthetic antiferromagnets included in magnetic tunnel junctions
2 Nov 20
A magnetoresistive memory device that stores data in the synthetic antiferromagnet (SAF) included in each spin-torque memory cell provides for more robust data storage.
Han-Jong Chia, Sumio Ikegawa, Michael Tran, Jon Slaughter
Filed: 26 Feb 19
Utility
Magnetic field sensor with increased SNR
19 Oct 20
Various means for improvement in signal-to-noise ratio (SNR) for a magnetic field sensor are disclosed for low power and high resolution magnetic sensing.
Phillip G. Mather, Anuraag Mohan
Filed: 27 Apr 16
Utility
Magnetoresistive stack/structure and methods therefor
19 Oct 20
A magnetoresistive device with a magnetically fixed region having at least two ferromagnetic regions coupled together by an antiferromagnetic coupling region.
Jijun Sun
Filed: 13 May 19
Utility
Magnetic field sensor and method of manufacture
5 Oct 20
A magnetic field sensor that includes a differential bridge in which each path of the bridge includes a first type of magnetic field sensing device and a second type of magnetic field sensing device.
Jon Slaughter
Filed: 23 Aug 17
Utility
Method of manufacturing integrated circuit using encapsulation during an etch process
14 Sep 20
A method of fabricating a magnetoresistive bit from a magnetoresistive stack includes etching through a first portion of the magnetoresistive stack using a first etch process to form one or more sidewalls.
Sanjeev Aggarwal, Sarin A. Deshpande, Kerry Joseph Nagel
Filed: 18 Sep 19
Utility
Magnetoresistive stacks with an unpinned, fixed synthetic anti-ferromagnetic structure and methods of manufacturing thereof
6 Jul 20
A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region.
Srinivas V. Pietambaram, Bengt J. Akerman, Renu Whig, Jason A. Janesky, Nicholas D. Rizzo, Jon M. Slaughter
Filed: 18 Dec 18
Utility
Magnetoresistive device design and process integration with surrounding circuitry
29 Jun 20
Magnetoresistive device architectures and methods for manufacturing are presented that facilitate integration of process steps associated with forming such devices into standard process flows used for surrounding logic/circuitry.
Thomas Andre, Sanjeev Aggarwal, Kerry Joseph Nagel, Sarin A. Deshpande
Filed: 25 Sep 18
Utility
Method of fabricating magnetoresistive bit from magnetoresistive stack
29 Jun 20
A method of fabricating a magnetoresistive bit from a magnetoresistive stack includes (a) etching through at least a portion of a thickness of the surface region to create a first set of exposed areas in the form of multiple strips extending in a first direction, and (b) etching through at least a portion of a thickness of the surface region to create a second set of exposed areas in the form of multiple strips extending in a second direction.
Kerry Joseph Nagel, Sanjeev Aggarwal, Sarin A. Deshpande
Filed: 21 Aug 18
Utility
Magnetoresistive stack with seed region and method of manufacturing the same
22 Jun 20
A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s).
Jijun Sun, Sanjeev Aggarwal, Han-Jong Chia, Jon M. Slaughter, Renu Whig
Filed: 14 Oct 19
Utility
Methods for monitoring and managing memory devices
18 May 20
The present disclosure is drawn to, among other things, a method of managing a memory device.
Kurt Baty, Terry Van Hulett
Filed: 20 Feb 18