1619 patents
Page 4 of 81
Utility
Negative Electrode and Zinc Secondary Battery
30 Nov 23
Provided is a negative electrode for use in a zinc secondary battery, including a negative electrode active material layer having a first surface and a second surface, and a negative electrode current collector plate embedded in the negative electrode active material layer parallel to the negative electrode active material layer.
Hiroshi HAYASHI, Hiroshi MATSUBAYASHI, Sota SHIMIZU
Filed: 31 Jul 23
Utility
Light converging member and optical component
28 Nov 23
A light converging member (10) according to an embodiment of the present invention includes: a recess portion (32) that is used for an optical component (100) with an optical element (14) for emitting light, the recess portion being opposed to the optical element (14) and having a size 0.5 or more times larger than the maximum length of a light emission region in the optical element; and a lens body (30) for converging light having passed through the recess portion (32).
Yoshio Kikuchi
Filed: 6 Jun 22
Utility
Composite sintered body, semiconductor manufacturing apparatus member and method of producing composite sintered body
28 Nov 23
A composite sintered body includes a base material that contains Al2O3 as a main component, and an electrode arranged inside or on a surface of the base material.
Keita Miyanishi, Kyohei Atsuji, Asumi Nagai, Hirofumi Yamaguchi, Soichiro Aoyagi
Filed: 8 Sep 21
Utility
Liquid Fuel Synthesis System and Liquid Fuel Synthesis Method
23 Nov 23
A liquid fuel synthesis system includes a liquid fuel synthesis unit and a sweep gas supply unit.
Hirofumi KAN, Atsushi TORII, Kosuke NAKAGAWA, Kazuki IIDA
Filed: 1 Aug 23
Utility
Composite Substrate, Surface Acoustic Wave Element, and Method of Producing Composite Substrate
23 Nov 23
A composite substrate includes: a piezoelectric layer; and a reflective layer arranged on a back surface side of the piezoelectric layer, the reflective layer including a low-impedance layer containing silicon oxide and a high-impedance layer, wherein the piezoelectric layer has a modified layer formed in an end portion on the back surface side thereof, and wherein the low-impedance layer has a density of 2.15 g/cm3 or more.
Takeshi YAMAMOTO, Keiichiro ASAI, Naoki FUJITA
Filed: 31 Jul 23
Utility
Zeolite Membrane Complex, Separation Apparatus, Membrane Reactor, and Method of Producing Zeolite Membrane Complex
23 Nov 23
A zeolite membrane complex includes a porous support and a zeolite membrane formed on the support and composed of ETL-type zeolite.
Ko KOBAYASHI, Makoto MIYAHARA, Kenichi NODA
Filed: 31 Jul 23
Utility
Porous ceramic structure and method of producing porous ceramic structure
21 Nov 23
When the porous ceramic structure contains Co together with Fe or Mn, the Co content is higher than or equal to 0.1 mass % and lower than or equal to 3.0 mass % in terms of Co3O4, and when the porous ceramic structure contains Co without containing Fe and Mn, the Co content is higher than or equal to 0.2 mass % and lower than or equal to 6.0 mass % in terms of Co3O4.
Yunie Izumi, Kennichi Hidaka, Akihiro Miura
Filed: 15 Mar 21
Design
Catalyst carrier for exhaust gas purification
14 Nov 23
Yoichi Aoki
Filed: 17 Aug 18
Utility
Gas sensor
14 Nov 23
A gas sensor includes: a sensor element; a plurality of element pads formed on a rear end portion of the sensor element; and a plurality of contact members holding the rear end portion of the sensor element and electrically connected respectively to the plurality of element pads.
Shotaro Niizuma, Yusuke Watanabe, Toshihiro Hirakawa, Hayami Aota
Filed: 16 Sep 20
Utility
Composite substrate for electro-optic element and method for manufacturing the same
14 Nov 23
A composite substrate for an electro-optic element includes: an electro-optic crystal substrate having an electro-optic effect; a support substrate bonded to the electro-optic crystal substrate at least via an amorphous layer; and a low-refractive-index layer located between the electro-optic crystal substrate and the amorphous layer and having a lower refractive index than the electro-optical crystal substrate.
Tomoyoshi Tai, Jungo Kondo
Filed: 30 Nov 22
Utility
Honeycomb Filter
9 Nov 23
Yudai KURIMOTO, Fumihiko YOSHIOKA
Filed: 20 Dec 22
Utility
Membrane Heat Treatment Method
9 Nov 23
A membrane heat treatment method includes a process of raising the temperature of a membrane to an intermediate heating temperature (step S21), a process of heating and keeping the membrane at the intermediate heating temperature (step S22), a process of raising the temperature of the membrane to a main heating temperature higher than the intermediate heating temperature (step S23), and the process of heating and keeping the membrane at the main heating temperature (step S24).
Aya MIURA, Narumi TOMOKAGE, Azumi OTA, Katsuya SHIMIZU
Filed: 14 Jul 23
Utility
Copper Alloy Assembly and Production Method Therefor
9 Nov 23
There is provided a copper alloy bonded body composed of a plurality of members made of an age-hardenable copper alloy, the members diffusion-bonded to one another.
Osamu TAKAKUWA, Hisao MATSUNAGA, Takahiro ISHIKAWA, Hiromitsu UCHIYAMA, Masato SAKAKIBARA, Masaaki AKAIWA
Filed: 26 Jun 23
Utility
Methane Production System and Methane Production Method
9 Nov 23
A methane production system includes a co-electrolysis/reforming cell and a control unit that controls operating temperatures of the co-electrolysis/reforming cell.
Hirofumi KAN, Atsushi TORII
Filed: 18 Jul 23
Utility
Honeycomb filter
7 Nov 23
A honeycomb filter includes a pillar-shaped honeycomb structure body having a porous partition wall disposed to surround a plurality of cells and a plugging portion, wherein the partition wall defining inflow cells includes partition wall parts making up sides of polygon that is sectional shape of each cell, the partition wall parts each having a surface that is a face defining the inflow cell, the partition wall part is either a first partition wall part loaded with the exhaust-gas purifying catalyst on the surface so that a percentage of the area loaded therewith exceeds 10%, or a second partition wall part loaded with the exhaust-gas purifying catalyst so that a percentage of the area loaded therewith is 10% or less, and the partition wall is configured to include one or more the first partition wall parts and one or more the second partition wall parts as the partition wall parts.
Kazuya Yuki
Filed: 25 Jan 21
Utility
Wafer placement device
7 Nov 23
A wafer placement device includes a wafer placement stage including a wafer electrostatic chuck and a wafer cooling plate, a focus-ring placement stage including a focus-ring electrostatic chuck and a focus-ring cooling plate, and a clamping member arranged around the focus-ring placement stage.
Hiroshi Takebayashi
Filed: 24 Aug 20
Utility
Gas sensor element
7 Nov 23
A gas sensor element in which oxidation of electrodes and a heater occurring with continued use is suppressed is provided.
Takayuki Sekiya, Shota Kageyama, Yusuke Watanabe
Filed: 31 Oct 19
Utility
Honeycomb Filter
2 Nov 23
A honeycomb filter includes: a honeycomb substrate having porous partition walls disposed so as to surround cells extending from an inflow end face to an outflow end face, an outer peripheral coating layer disposed so as to surround an outer periphery of the honeycomb substrate, and plugging portions that are disposed at any one of ends on the inflow end face and ends on the outflow end face, of the cells, wherein, the outer peripheral coating layer has an inflection point at which thermal expansion in thermal expansion behavior of the outer peripheral coating layer turns to contraction and a temperature T1 of which is 1000 to 1500° C., and the outer peripheral coating layer has a porosity P1 of 36 to 48%, and a thermal expansion coefficient C1 between 40 to 800° C. of 2.5 to 3.5×10-6 /°C.
Fumihiko YOSHIOKA, Yudai KURIMOTO
Filed: 24 Feb 23
Utility
Honeycomb Filter
2 Nov 23
Fumihiko YOSHIOKA, Yuji SASAKI, Yasuyuki FURUTA, Ritsuko TERANISHI, Ayaka SAKAI, Tatsuya OHASHI
Filed: 2 Mar 23
Utility
Group-iii Element Nitride Semiconductor Substrate
2 Nov 23
A Group-III element nitride semiconductor substrate includes: a first surface; and a second surface.
Katsuhiro IMAI, Tomohiko SUGIYAMA
Filed: 30 Jun 23