223 patents
Utility
Packaging Bag for Filling Crushed Polysilicon Material and Polysilicon Package
11 Jan 24
A packaging bag according to the present invention for packing a crushed polysilicon material is a packaging bag (1) for directly packaging a crushed polysilicon material and includes a multi-layer film in which an additive-free polyethylene-based resin layer (2) is disposed in an innermost layer, and, on the polyethylene-based resin layer, at least a gas barrier layer (3) and a reinforcing material layer (4) are stacked.
Takuya Asano, Takuya YOKOSE, Toru ONODA
Filed: 1 Mar 22
Utility
Semiconductor Wafer Processing Liquid Containing Hypobromite Ions and PH Buffering Agent
11 Jan 24
Takafumi SHIMODA, Yuki KIKKAWA, Tomoaki SATO, Takayuki NEGISHI
Filed: 6 Aug 21
Utility
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11 Jan 24
In order to improve a purity of an entire polycrystalline silicon rod, a polycrystalline silicon rod (1) is configured such that: an outer-side total concentration (C1) is 100 pptw or less; and a ratio of an outer-side total concentration (C1) to an inner-side total concentration (C2) is 1.0 or more and 2.5 or less.
Junya SAKAI, Akira HAKOMORI
Filed: 1 Sep 21
Utility
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2 Jan 24
Provided are a method of cleaning a group III nitride single crystal substrate which enables the roughness of a nitrogen-polar face of the group III nitride single crystal substrate to be suppressed to remove foreign substances, and a method of producing a group III nitride single crystal substrate.
Masayuki Fukuda, Reo Yamamoto
Filed: 17 Aug 22
Utility
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28 Dec 23
One embodiment of the present invention relates to a method of manufacturing a green sheet, a method of manufacturing a silicon nitride sintered body, or a green sheet molding material.
Dai Kusano, Kunihiro Gotoh, Yasuhiro Araki
Filed: 29 Sep 21
Utility
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28 Dec 23
A hydrophobic aluminum nitride powder of the present invention has a hydrophobicity of 1 to 45.
Yoshitaka INAKI, Hisamori INAGAWA
Filed: 13 Dec 21
Utility
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21 Dec 23
A group III nitride single crystal substrate including a main surface, the main surface including: a center; a periphery; an outer region whose distance from the center is greater than 30% of a first distance, the first distance being a distance from the center to the periphery; and an inner region whose distance from the center is no more than 30% of the first distance, wherein a ratio (vA−vB)/vB is within the range of ±0.1%, wherein vA is a minimum value of peak wave numbers of micro-Raman spectra in the inner region; and vB is an average value of peak wave numbers of micro-Raman spectra in the outer region.
Masayuki FUKUDA, Toru NAGASHIMA
Filed: 15 Aug 23
Utility
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7 Dec 23
A microballoon according to the present invention contains, in a surface layer of the microballoon, a polymerizable functional group having reactivity with an iso(thio)cyanate group, and the microballoon has a particle diameter of 10 μm to 200 μm.
Yasutomo SHIMIZU, Takayoshi KAWASAKI
Filed: 20 Aug 21
Utility
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23 Nov 23
An object of the present invention is to provide a compound with high catalytic activity that can be used as a catalyst for oxygen evolution reaction.
Masaharu Nakayama, Airi Takeda, Heishi Maruyama, Masanobu Azuma
Filed: 8 Oct 21
Utility
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16 Nov 23
The present invention relates to a curable composition containing (A) a side chain-containing cyclic molecule in which three or more side chains each having a polymerizable functional group introduced at a terminal are introduced ((A) cyclic polyfunctional monomer), and (B) a polymerizable monomer having a polymerizable functional group polymerizable with the side chain-containing cyclic molecule ((B) another polymerizable monomer).
Yasutomo SHIMIZU, Kazuishi FUKUDA, Takayoshi KAWASAKI
Filed: 4 Aug 21
Utility
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9 Nov 23
The present invention provides a silicon nitride sintered substrate capable of reducing contamination caused by a boron nitride powder or the like used as a releasing agent and problems in bonding strength and dielectric strength at the time of laminating metal layers or the like, where the contamination is caused by a network structure provided by a silicon nitride crystal formed on the surface of the substrate in an unpolished state after sintering a silicon nitride powder.
Norihira MITSUMURA, Dai KUSANO, Hideaki KAWAI
Filed: 29 Jun 21
Utility
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9 Nov 23
Provided is a method for continuously producing a silicon nitride sintered compact for enabling a continuous production of silicon nitride sintered compacts by sintering using a silicon nitride powder having a high β-phase rate.
Dai KUSANO
Filed: 29 Jun 21
Utility
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7 Nov 23
A primer composition for optical articles includes (A) a urethane prepolymer which is a reaction product of an aromatic polyisocyanate compound and a polyol compound, and which has a reactive group at an end, the reactive group being selected from among an isocyanate group and a hydroxyl group, (B) a light absorbing compound which has a maximum absorption wavelength within the range of from 320 nm to 650 nm (inclusive) and (C) an organic solvent which has a solubility parameter of 8 (cal/cm3)1/2 or more, while containing no active hydrogen.
Junji Momoda, Shinobu Izumi, Taichi Hanasaki
Filed: 11 Jun 18
Utility
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7 Nov 23
Provided is a high-purity isopropyl alcohol in which the concentration of a C7-12 acetal compound is 100 ppb or less on a mass basis, the concentration of the acetal compound in an accelerated test involving heating for 4 hours at 80° C. in a nitrogen atmosphere is increased by a factor of 30 or less with respect to the value thereof prior to heating, and the concentration of the acetal compound is maintained at a value of 100 ppb or less on a mass basis.
Shunsuke Hosaka, Masanari Ishizuki
Filed: 30 Sep 19
Utility
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24 Oct 23
A hammer (1) for use in shape processing of a silicon block is a hammer for crushing a silicon block so as to carry out shape processing with respect to the silicon block, the hammer including: a handle (10) made of a resin; and a hammer head (20) fixed to the handle (10).
Kazuhiro Kawaguchi
Filed: 20 Feb 19
Utility
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5 Oct 23
Provided are a method of cleaning a group III nitride single crystal substrate which enables the roughness of a nitrogen-polar face of the group III nitride single crystal substrate to be suppressed to remove foreign substances, and a method of producing a group III nitride single crystal substrate.
Masayuki FUKUDA, Reo YAMAMOTO
Filed: 17 Aug 22
Utility
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26 Sep 23
The present invention relates to a photochromic compound including a polyvalent residue on which at least one group having a photochromic moiety is substituted, and at least one long-chain group not containing a photochromic moiety and having a molecular weight of 300 or more is further substituted; and a curable composition containing the same.
Takao Noguchi, Junji Takenaka, Junji Momoda, Takayoshi Kawasaki, Yasutomo Shimizu, Masayuki Miyazaki
Filed: 18 Jul 19
Utility
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26 Sep 23
A group III nitride single crystal substrate including a main surface, the main surface including: a center; a periphery; an outer region whose distance from the center is greater than 30% of a first distance, the first distance being a distance from the center to the periphery; and an inner region whose distance from the center is no more than 30% of the first distance, wherein a ratio (νA−νB)/νB is within the range of ±0.1%, wherein νA is a minimum value of peak wave numbers of micro-Raman spectra in the inner region; and νB is an average value of peak wave numbers of micro-Raman spectra in the outer region.
Masayuki Fukuda, Toru Nagashima
Filed: 21 Sep 18
Utility
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21 Sep 23
A polycrystalline silicon crushed lump has a surface metal concentration of 15.0 pptw or less, in which a copper concentration is 0.30 pptw or less in the surface metal concentration, and a total concentration of iron and zinc is 2.00 pptw or less in the surface metal concentration, and preferably an iron concentration is 1.25 pptw or less, and a zinc concentration is 0.75 pptw or less.
Manabu Sakida, Shinichiro Koyanagi
Filed: 26 Aug 21
Utility
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21 Sep 23
A silicon etching liquid which is characterized by containing a quaternary ammonium hydroxide represented by formula (1), a quaternary ammonium salt represented by formula (2) and water, and which is also characterized in that the concentration of the quaternary ammonium salt represented by formula (2) is more than 1% by mass but not more than 50% by mass. (1): R1R2R3R4N+·OH− (In formula (1), R1, R2, R3 and R4 may be the same groups or different groups, and each represents an optionally substituted alkyl group, aryl group or a benzyl group.) (2): R5R6R7R8N+·X− (In formula (2), R5, R6, R7 and R8 may be the same groups or different groups, and each represents an optionally substituted alkyl group having from 1 to 16 carbon atoms; and X represents BF4, a fluorine atom, a chlorine atom or a bromine atom.)
Yoshiki SEIKE, Manami OSHIO, Seiji TONO
Filed: 29 Jul 21