162 patents
Utility
Packaging Bag for Filling Crushed Polysilicon Material and Polysilicon Package
11 Jan 24
A packaging bag according to the present invention for packing a crushed polysilicon material is a packaging bag (1) for directly packaging a crushed polysilicon material and includes a multi-layer film in which an additive-free polyethylene-based resin layer (2) is disposed in an innermost layer, and, on the polyethylene-based resin layer, at least a gas barrier layer (3) and a reinforcing material layer (4) are stacked.
Takuya Asano, Takuya YOKOSE, Toru ONODA
Filed: 1 Mar 22
Utility
Semiconductor Wafer Processing Liquid Containing Hypobromite Ions and PH Buffering Agent
11 Jan 24
Takafumi SHIMODA, Yuki KIKKAWA, Tomoaki SATO, Takayuki NEGISHI
Filed: 6 Aug 21
Utility
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11 Jan 24
In order to improve a purity of an entire polycrystalline silicon rod, a polycrystalline silicon rod (1) is configured such that: an outer-side total concentration (C1) is 100 pptw or less; and a ratio of an outer-side total concentration (C1) to an inner-side total concentration (C2) is 1.0 or more and 2.5 or less.
Junya SAKAI, Akira HAKOMORI
Filed: 1 Sep 21
Utility
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28 Dec 23
A hydrophobic aluminum nitride powder of the present invention has a hydrophobicity of 1 to 45.
Yoshitaka INAKI, Hisamori INAGAWA
Filed: 13 Dec 21
Utility
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28 Dec 23
One embodiment of the present invention relates to a method of manufacturing a green sheet, a method of manufacturing a silicon nitride sintered body, or a green sheet molding material.
Dai Kusano, Kunihiro Gotoh, Yasuhiro Araki
Filed: 29 Sep 21
Utility
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21 Dec 23
A group III nitride single crystal substrate including a main surface, the main surface including: a center; a periphery; an outer region whose distance from the center is greater than 30% of a first distance, the first distance being a distance from the center to the periphery; and an inner region whose distance from the center is no more than 30% of the first distance, wherein a ratio (vA−vB)/vB is within the range of ±0.1%, wherein vA is a minimum value of peak wave numbers of micro-Raman spectra in the inner region; and vB is an average value of peak wave numbers of micro-Raman spectra in the outer region.
Masayuki FUKUDA, Toru NAGASHIMA
Filed: 15 Aug 23
Utility
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7 Dec 23
A microballoon according to the present invention contains, in a surface layer of the microballoon, a polymerizable functional group having reactivity with an iso(thio)cyanate group, and the microballoon has a particle diameter of 10 μm to 200 μm.
Yasutomo SHIMIZU, Takayoshi KAWASAKI
Filed: 20 Aug 21
Utility
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23 Nov 23
An object of the present invention is to provide a compound with high catalytic activity that can be used as a catalyst for oxygen evolution reaction.
Masaharu Nakayama, Airi Takeda, Heishi Maruyama, Masanobu Azuma
Filed: 8 Oct 21
Utility
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16 Nov 23
The present invention relates to a curable composition containing (A) a side chain-containing cyclic molecule in which three or more side chains each having a polymerizable functional group introduced at a terminal are introduced ((A) cyclic polyfunctional monomer), and (B) a polymerizable monomer having a polymerizable functional group polymerizable with the side chain-containing cyclic molecule ((B) another polymerizable monomer).
Yasutomo SHIMIZU, Kazuishi FUKUDA, Takayoshi KAWASAKI
Filed: 4 Aug 21
Utility
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9 Nov 23
The present invention provides a silicon nitride sintered substrate capable of reducing contamination caused by a boron nitride powder or the like used as a releasing agent and problems in bonding strength and dielectric strength at the time of laminating metal layers or the like, where the contamination is caused by a network structure provided by a silicon nitride crystal formed on the surface of the substrate in an unpolished state after sintering a silicon nitride powder.
Norihira MITSUMURA, Dai KUSANO, Hideaki KAWAI
Filed: 29 Jun 21
Utility
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9 Nov 23
Provided is a method for continuously producing a silicon nitride sintered compact for enabling a continuous production of silicon nitride sintered compacts by sintering using a silicon nitride powder having a high β-phase rate.
Dai KUSANO
Filed: 29 Jun 21
Utility
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5 Oct 23
Provided are a method of cleaning a group III nitride single crystal substrate which enables the roughness of a nitrogen-polar face of the group III nitride single crystal substrate to be suppressed to remove foreign substances, and a method of producing a group III nitride single crystal substrate.
Masayuki FUKUDA, Reo YAMAMOTO
Filed: 17 Aug 22
Utility
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21 Sep 23
A polycrystalline silicon crushed lump has a surface metal concentration of 15.0 pptw or less, in which a copper concentration is 0.30 pptw or less in the surface metal concentration, and a total concentration of iron and zinc is 2.00 pptw or less in the surface metal concentration, and preferably an iron concentration is 1.25 pptw or less, and a zinc concentration is 0.75 pptw or less.
Manabu Sakida, Shinichiro Koyanagi
Filed: 26 Aug 21
Utility
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21 Sep 23
A silicon etching liquid which is characterized by containing a quaternary ammonium hydroxide represented by formula (1), a quaternary ammonium salt represented by formula (2) and water, and which is also characterized in that the concentration of the quaternary ammonium salt represented by formula (2) is more than 1% by mass but not more than 50% by mass. (1): R1R2R3R4N+·OH− (In formula (1), R1, R2, R3 and R4 may be the same groups or different groups, and each represents an optionally substituted alkyl group, aryl group or a benzyl group.) (2): R5R6R7R8N+·X− (In formula (2), R5, R6, R7 and R8 may be the same groups or different groups, and each represents an optionally substituted alkyl group having from 1 to 16 carbon atoms; and X represents BF4, a fluorine atom, a chlorine atom or a bromine atom.)
Yoshiki SEIKE, Manami OSHIO, Seiji TONO
Filed: 29 Jul 21
Utility
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14 Sep 23
Takao NOGUCHI, Katsuhiro MORI, Junji MOMODA
Filed: 25 May 21
Utility
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14 Sep 23
A silicon etching liquid which contains a quaternary ammonium hydroxide represented by formula (1), a quaternary ammonium iodide represented by formula (2), and water. (1): R11R12R13R14N+·OH− (In formula (1), each of R11, R12, R13 and R14 independently represents an aryl group, a benzyl group or an alkyl group having from 1 to 16 carbon atoms; and the alkyl group, the aryl group or the benzyl group may have a hydroxyl group.) (2): R21R22R23R24N+·I− (In formula (2), R21, R22, R23 and R24 may be the same groups or different groups, and each represents an optionally substituted aryl group, benzyl group or alkyl group having from 1 to 10 carbon atoms.)
Yoshiki SEIKE, Manami OSHIO, Seiji TONO
Filed: 29 Jul 21
Utility
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14 Sep 23
The laminate for a circuit board of the present invention is a laminate including a metal nitride sintered board and a copper sheet, and the laminate has a size with a minimum length from a center of a plane to a peripheral edge of 50 mm or more, and has a void ratio X of 0.50% or less, which is a ratio of a total length LB of voids having a diameter of 1 µm or more confirmed in the vicinity of a bonding interface of the metal nitride sintered board and the copper sheet with respect to a measured length LI of the bonding interface, measured on a cut cross section obtained by cutting the laminate in a lamination direction.
Eiki TSUSHIMA, Ryuji ISHIMOTO, Masakatsu MAEDA
Filed: 30 Jul 21
Utility
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7 Sep 23
The present invention aims to provide a photochromic compound capable of exhibiting photochromic properties regardless of matrix, and the compound is stably dispersed without aggregation in a process of molding (curing) an optical base material.
Masayuki MIYAZAKI, Katsuhiro MORI, Junji MOMODA
Filed: 4 Aug 21
Utility
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31 Aug 23
Katsuhiro MORI, Toshimitsu HIRAREN, Junji MOMODA
Filed: 18 Apr 23
Utility
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31 Aug 23
A significant reduction in the burden on an evacuation operator and a significant reduction in evacuation cost are achieved when the concentration of impurities included in silicon are measured in liquid helium by a photoluminescence method.
Junya SAKAI, Tomohiro YAMAMOTO
Filed: 3 Jun 21