24 patents
Utility
Processor and event processing method
9 Jan 24
An event processing method of a processor according to one or more embodiments may include detecting an event input, which notifies an occurrence of an event, detecting a wait event by an event input, changing a status from an execution status to a wait status and outputs a count start signal by an event wait instruction, and changes a status from the wait status to the execution status and outputs a count end signal by the detection of the wait event, incrementing a counter value from an initial value by output of the count start signal, and ends counting by output of the count end signal; and receiving and storing a count value of the timer counter by output of the count end signal.
Hitomi Shishido, Daeun Lee, Kazuhiro Mima
Filed: 24 Feb 22
Utility
Dimming agent and light-emitting device containing dimming agent
5 Dec 23
A dimming agent according to one or more embodiments is disclosed that may include at least one of terbium, praseodymium, manganese, titanium.
Yousuke Umetsu, Kazuyoshi Haga
Filed: 14 Sep 22
Utility
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21 Nov 23
An analog-to-digital converter is disclosed that converts an input analog potential to a digital conversion value.
Hideki Hayashi
Filed: 23 Dec 21
Utility
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3 Oct 23
A first semiconductor region, a second semiconductor region, and a third semiconductor region are arranged in layers.
Bungo Tanaka
Filed: 29 Jun 21
Utility
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12 Sep 23
An analog-to-digital converter according to one or more embodiments is disclosed that converts an analog input to a digital converted value by repeating a conversion data generation operation by a conversion data generator, a potential generation operation by a capacitance DAC, and a comparison operation by a comparator for a resolution bit, the analog-to-digital converter. a comparator operation signal generation circuit predicts the time when a potential generated by the capacitance DAC becomes settled based on a charging or discharging time to a capacitance element whose characteristics are equal to those of the capacitance used in the capacitance DAC, and generates a comparator operation signal to allow the comparator to start the comparison operation.
Hideki Hayashi
Filed: 29 Sep 21
Utility
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27 Jun 23
An analog-digital conversion circuit is disclosed for comparing a comparison potential with a reference potential generated based on a reference power supply to convert a comparison potential to a digital value.
Hideki Hayashi
Filed: 28 Dec 21
Utility
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21 Feb 23
A pipeline processing unit includes a fetch unit that fetches the instruction for the thread having an execution right, a decoding unit that decodes the instruction fetched by the fetch unit, and a computation execution unit that executes the instruction decoded by the decoding unit.
Kazuhiro Mima, Hitomi Shishido
Filed: 10 Jun 21
Utility
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27 Dec 22
A semiconductor device is disclosed that includes a group of trenches positioned in active region inside a first semiconductor region.
Taro Kondo
Filed: 12 Jan 21
Utility
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6 Dec 22
A semiconductor device according to one or more embodiments may include a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type with a higher impurity concentration than an impurity concentration of the first semiconductor region, the second semiconductor region being provided on a first principal surface of the first semiconductor region, a third semiconductor region of a second conductivity type provided on an upper surface of the second semiconductor region, the third semiconductor region being doped with an impurity in accordance with an impurity concentration profile including peaks along a film thickness direction, a fourth semiconductor region of the first conductivity type provided on an upper surface of the third semiconductor region.
Yuuichi Oshino
Filed: 28 Jan 21
Utility
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26 Jul 22
An analog-to-digital converter that converts an inputted analog signal into a digital value is disclosed that may include unit circuits that each generate reference voltages comprising regular potential intervals by a series resistor circuit connected between a high potential side reference voltage and a low potential side reference voltage and convert the reference voltages into a digital value by comparing the reference voltages with the inputted analog signal, and an adder that adds the digital values converted by the unit circuits.
Hideki Hayashi
Filed: 23 Mar 21
Utility
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10 May 22
A multicore system according to one or more embodiments is disclosed, which may include processors that execute processing different from each other, a selector that selects one of the processors, a checker processor, a comparator that compares an external state of the processor selected by the selector with an external state of the checker processor, or compares an internal state of the processor selected by the selector with an internal state of the checker processor, and a controller that determines that the selected processor or the checker processor is abnormal in response to the external states or the internal states not matching each other based on comparison results obtained by the comparator.
Takanaga Yamazaki
Filed: 5 Jan 21
Utility
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8 Feb 22
A data processing device according to one or more embodiment is disclosed.
Takanaga Yamazaki
Filed: 26 Jun 19
Utility
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8 Feb 22
A light emitting device (1) includes: three or more light emitting units (10, 20, 30) that individually include blue light emitting element, a wavelength range of the blue light emitting element accommodated in respective packages being different from each other.
Takaya Ueno, Hitoshi Murofushi
Filed: 30 Oct 17
Utility
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8 Feb 22
A trench semiconductor device includes a layer of semiconductor material, an exterior trench pattern formed in the layer of semiconductor material, and an interior trench pattern formed in the layer of semiconductor material, at least partially surrounded by the exterior trench pattern.
Dosi Dosev, Don Rankila, Tatsuya Kamimura, Shunsuke Fukunaga, Steven L. Kosier, Peter West
Filed: 23 Dec 19
Utility
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18 May 21
A semiconductor device, comprising a nitride semiconductor layer, a switching element, and a driving transistor; the switching element comprises: a first portion of a first electrode formed on the nitride semiconductor layer; a second electrode formed on the nitride semiconductor layer; and a first control electrode formed on the nitride semiconductor layer and located between the first portion of the first electrode and the second electrode; the driving transistor comprises: a second portion of the first electrode formed on the nitride semiconductor layer and connecting the first portions of the adjacent first electrodes to each other; a third electrode formed on the nitride semiconductor layer and transmitting a signal to the first control electrode; and a second control electrode formed on the nitride semiconductor layer and located between the second portion of the first electrode and the third electrode.
Osamu Machida, Yasushi Tasaka
Filed: 15 Sep 17
Utility
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27 Apr 21
A semiconductor device includes: a semiconductor base; a trench insulating film which is provided on the inner wall surface of a trench formed from the upper surface of the semiconductor base in a film thickness direction of the semiconductor base and including a charged region which is charged positively; and a gate electrode provided on the trench insulating film within the trench.
Shunsuke Fukunaga, Taro Kondo
Filed: 27 Oct 16
Utility
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2 Feb 21
Embodiments of this disclosure provide a control apparatus and method for a current resonance circuit and a current resonance power supply.
Ryuichi Furukoshi, Osamu Ohtake
Filed: 18 Nov 19
Utility
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19 Jan 21
Apparatus and associated methods relate to a bond-pad structure having small pad-substrate capacitance for use in high-voltage MOSFETs.
Peter West, Dosi Dosev, Don Rankila, Tatsuya Kamimura, Steve Kosier
Filed: 13 Sep 17
Utility
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12 Jan 21
A semiconductor device includes: a semiconductor base 10 in which a first trench 101 is formed in a mesh-like shape in a plan view and a second trench 102 is formed in a mesh opening surrounded by the first trench 101; a first semiconductor element 1 which is formed in the semiconductor base 10 and includes a first gate electrode 81 provided within the first trench 101; and a second semiconductor element 2 which is formed in the semiconductor base 10 and includes a second gate electrode 82 provided within the second trench 102 surrounded by the first gate electrode 81.
Shunsuke Fukunaga, Taro Kondo
Filed: 27 Oct 16
Utility
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28 Dec 20
A power conversion device according to one or more embodiments may include: a microcomputer; and an output circuit controlled by the microcomputer, including an output unit that converts an input power into a predetermined power and outputs the predetermined power, an internal power source that supplies a power source to the microcomputer, a driver that drives the output unit by a signal from the microcomputer, and a microcomputer stop transition unit that, when an operation of the power conversion device is stopped, outputs a microcomputer stop signal to the microcomputer and causes an operation of the microcomputer to transition to a stop state.
Junichi Takada, Mitsutomo Yoshinaga, Toshihiro Nakano, Koki Imai, Osamu Ohtake
Filed: 18 Feb 20