14 patents
Utility
Heteroepitaxial wafer and method for producing a heteroepitaxial wafer
9 Jan 24
Sarad Bahadur Thapa, Martin Vorderwestner
Filed: 16 Aug 18
Utility
Method for producing a single crystal from semiconductor material by the FZ method; device for carrying out the method and semiconductor silicon wafer
17 Oct 23
Ludwig Altmannshofer, Goetz Meisterernst, Gundars Ratnieks, Simon Zitzelsberger
Filed: 4 Jun 19
Utility
Method for simultaneously cutting a plurality of disks from a workpiece
8 Aug 23
A method cuts semiconductor wafers.
Guenther Grupp Mueller, James Mal, Adam Marion, Stan Meek, James Mullins
Filed: 31 May 21
Utility
Method, control system, and system for machining a semiconductor wafer, and semiconductor wafer
23 May 23
The invention relates to a method of processing a semiconductor in the semiconductor wafer is disposed on a susceptor in a coating apparatus and processed, wherein an etching gas is passed through the coating apparatus in an etching step.
Axel Beyer, Christof Weber, Stefan Welsch
Filed: 4 Jun 18
Utility
Method for producing a semiconductor wafer composed of monocrystalline silicon
2 May 23
A method produces a single-crystal silicon semiconductor wafer.
Timo Mueller, Michael Boy, Michael Gehmlich, Andreas Sattler
Filed: 7 Jul 22
Utility
Semiconductor wafer of monocrystalline silicon and method of producing the semiconductor wafer
4 Apr 23
Andreas Sattler, Alexander Vollkopf, Karl Mangelberger
Filed: 8 Jun 22
Utility
Device for pulling a single crystal of semiconductor material out of a melt using the CZ method, and method using the device
7 Mar 23
Alexander Molchanov
Filed: 27 Sep 19
Utility
Epitaxially coated semiconductor wafer of monocrystalline silicon and method for production thereof
14 Feb 23
A semiconductor wafer comprises a substrate wafer of monocrystalline silicon and a dopant-containing epitaxial layer of monocrystalline silicon atop the substrate wafer, wherein a non-uniformity of the thickness of the epitaxial layer is not more than 0.5% and a non-uniformity of the specific electrical resistance of the epitaxial layer is not more than 2%.
Reinhard Schauer, Joerg Haberecht
Filed: 12 Jul 18
Utility
Method for depositing an epitaxial layer on a front side of a semiconductor wafer and device for carrying out the method
27 Dec 22
A method deposits an epitaxial layer on a front side of a semiconductor wafer having monocrystalline material.
Joerg Haberecht, Rene Stein, Stephan Heinrich
Filed: 28 Nov 18
Utility
Semiconductor wafer having epitaxial layer
25 Oct 22
A semiconductor wafer of monocrystalline silicon.
Norbert Werner, Christian Hager
Filed: 12 Dec 18
Utility
Semiconductor wafer of monocrystalline silicon and method of producing the semiconductor wafer
16 Aug 22
Andreas Sattler, Alexander Vollkopf, Karl Mangelberger
Filed: 19 Jul 18
Utility
Single crystal of silicon with <100> orientation, which is doped with n-type dopant, and method for producing such a single crystal
19 Jul 22
Single crystal silicon with <100> orientation is doped with n-type dopant and comprises a starting cone, a cylindrical portion and an end cone, a crystal angle being not less than 20° and not greater than 30° in a middle portion of the starting cone, the length of which is not less than 50% of a length of the starting cone, and edge facets extending from a periphery of the single crystal into the single crystal, the edge facets in the starting cone and in the cylindrical portion of the single crystal in each case having a length which is not more than 700 μm.
Georg Raming, Ludwig Stockmeier, Jochen Friedrich, Matthias Daniel, Alfred Miller
Filed: 28 Aug 18
Utility
Susceptor for holding a semiconductor wafer having an orientation notch, a method for depositing a layer on a semiconductor wafer, and semiconductor wafer
5 Jul 22
A semiconductor wafer processing susceptor for holding a wafer having an orientation notch during deposition of a layer on the wafer, having a placement surface for supporting the semiconductor wafer in the rear edge region of the wafer, the placement surface having a stepped outer delimitation, and an indentation of the outer delimitation of the placement surface for placement of the partial region of the edge region of the rear side of the wafer in which the orientation notch is located onto a partial region of the placement surface delimited by the indentation of the outer delimitation of the placement surface.
Reinhard Schauer, Christian Hager
Filed: 22 Mar 18
Utility
Semiconductor wafer made of single-crystal silicon and process for the production thereof
22 Mar 22
A semiconductor wafer made of single-crystal silicon has an oxygen concentration (new ASTM) of not less than 4.9×1017 atoms/cm3 and not more than 6.5×107 atoms/cm3 and a nitrogen concentration (new ASTM) of not less than 8×1012 atoms/cm3 and not more than 5×1013 atoms/cm3, wherein a frontside of the semiconductor wafer is covered with an epitaxial layer made of silicon, wherein the semiconductor wafer comprises BMDs of octahedral shape whose mean size is 13 to 35 nm, and whose mean density is not less than 3×108 cm−3 and not more than 4×109 cm−3, as determined by IR tomography.
Timo Mueller, Andreas Sattler, Robert Kretschmer, Gudrun Kissinger, Dawid Kot
Filed: 25 Jun 18
- Prev
- 1
- Next
Patents are sorted by USPTO publication date, most recent first