50 patents
Utility
Method for Depositing an Epitaxial Layer on a Substrate Wafer
18 Jan 24
A characteristic thickness value of an edge of a wafer is determined, including at a notch position.
Thomas Stettner
Filed: 27 Oct 21
Utility
Heteroepitaxial wafer and method for producing a heteroepitaxial wafer
9 Jan 24
Sarad Bahadur Thapa, Martin Vorderwestner
Filed: 16 Aug 18
Utility
Method for Classifying Unknown Particles on a Surface of a Semi-conductor Wafer
28 Dec 23
Unknown particles on a surface of a semiconductor wafer are classified by applying a range of particles of known chemical composition and different sizes onto a test wafer, measuring the sizes of a plurality of the particles and spectrally analyzing a makeup of the particles by energy-dispersive x-ray spectroscopy, followed by ascertaining a substantive content therefrom; creating a best-fit curve to the size and substantive content of the particles; measuring the particle size of an unknown particle and recording its spectrum by energy-dispersive x-ray spectroscopy and classifying the unknown particle as the result of a comparison of the size and the substantive content of the unknown particle with the best-fit curve.
Sebastian ANDRES, Robert HINTERLEUTHNER, Rudolf RUPP
Filed: 26 Oct 21
Utility
Method and Device for Depositing an Epitaxial Layer on a Substrate Wafer Made of Semiconductor Material
16 Nov 23
A method deposits an epitaxial layer on a semiconductor substrate having a wedge-shaped cross section.
Thomas Stettner, Walter Edmaier
Filed: 20 Sep 21
Utility
System and Method for Processing Silicon Wafers
26 Oct 23
A method for processing a silicon wafer, the method including cutting an ingot to form a wafer, extracting from measured shape data a cross-sectional profile, the cross-sectional profile passing through the center of the wafer and being aligned with a cutting direction of an ingot, interpolating the shape data with a fixed and pre-determined step size, fitting a first second-degree polynomial to the cross-sectional profile, determining a residual profile by subtracting the polynomial from the cross-sectional profile, fitting a second second-degree polynomial to the residual profile using a sliding window of pre-determined width to determine a position, height, and curvature of each peak and valley of the residual profile, determining a waviness parameter based on the position, height, and curvature of each peak and valley of the residual profile, and further processing the wafer based on the waviness parameter and a predetermined waviness threshold.
Andrei Istratov, Tom Wu, Katharina Zahnweh
Filed: 20 Apr 22
Utility
Method and Device for Producing a Single Crystal of Silicon, Which Single Crystal Is Doped with N-type Dopant
19 Oct 23
Single crystal silicon cylindrical portions grown by the CZ method and highly doped with one or more n-type dopants so as to have a resistivity of not more than 2 mΩcm are prepared by directing dopant in a gas flow from an external sublimation apparatus into the pulling chamber through or below the heat shield, to the bottom of an annular ring of the heat shield and from there through a plurality of nozzles toward the surface of the melt.
Wolfgang STAUDACHER, Georg RAMING
Filed: 3 Dec 20
Utility
Method for producing a single crystal from semiconductor material by the FZ method; device for carrying out the method and semiconductor silicon wafer
17 Oct 23
Ludwig Altmannshofer, Goetz Meisterernst, Gundars Ratnieks, Simon Zitzelsberger
Filed: 4 Jun 19
Utility
Method for Depositing a Silicon Germanium Layer on a Substrate
12 Oct 23
A method heteroepitaxially deposits a silicon germanium layer on a substrate.
Lucas Becker, Peter Storck
Filed: 18 Aug 21
Utility
Method and Apparatus for Simultaneously Slicing a Multiplicity of Slices from a Workpiece
5 Oct 23
A multiplicity of slices are simultaneously sliced from a workpiece during a slicing operation using a wire saw.
Georg PIETSCH
Filed: 7 Jul 21
Utility
Method and Apparatus for Producing a Gas Curtain of Purge Gas In a Slit Valve Tunnel
14 Sep 23
Contamination of semiconductor wafers during coating and other operations is mitigated by passing the wafer through a tunnel with a slit providing a gas curtain which impinges upon the wafer as the wafer is transported from one station to the next station in the processing apparatus.
Patrick MOOS, Marco FELDMANN
Filed: 18 Jun 21
Utility
Apparatus and Method for Depositing a Layer of Semiconductor Material on a Substrate Wafer
14 Sep 23
An apparatus for depositing a layer of semiconductor material on a substrate wafer.
Hannes HECHT
Filed: 16 Jul 21
Utility
Method for Separating a Plurality of Slices from Workpieces by Means of a Wire Saw During a Sequence of Separation Processes
14 Sep 23
A method cuts slices from workpieces using a wire saw having a wire array, which is tensioned in a plane between two wire guide rollers supported between fixed and floating bearings and having a chamber and a shell.
Peter Wiesner, Wolfgang Gmach, Robert Kreuzeder
Filed: 20 May 21
Utility
Method for Producing a Vacuum Gripper for Semiconductor Workpieces, and Vacuum Gripper
7 Sep 23
A vacuum gripper for semiconductor workpieces is produced from at least one base material by means of an additive manufacturing method such as 3D printing.
Sebastian GEISSLER, Ludwig LAMPRECHT
Filed: 21 Jul 21
Utility
Method for Separating a Plurality of Slices from Workpieces by Means of a Wire Saw During a Sequence of Separation Processes
7 Sep 23
Slices are cut from workpieces during a sequence of cut-off operations by a wire saw, having a wire array.
Axel Beyer, Patrick Berger, Wolfgang Dietz, Carl Frintert, Matthias Guenther
Filed: 27 May 21
Utility
Crystal Piece of Monocrystalline Silicon
17 Aug 23
A crystal piece of monocrystalline silicon suitable for the production of semiconductor wafers has a length of not less than 8 cm and not more than 50 cm and a diameter of not less than 280 mm and not greater than 320 mm, wherein the fraction of the semiconductor wafers produced therefrom that are free from pinholes having a size of not more than 30 μm is greater than 98%.
Sergiy BALANETSKYY, Toni LEHMANN, Karl MANGELBERGER, Dirk ZEMKE
Filed: 30 Jun 21
Utility
Method for simultaneously cutting a plurality of disks from a workpiece
8 Aug 23
A method cuts semiconductor wafers.
Guenther Grupp Mueller, James Mal, Adam Marion, Stan Meek, James Mullins
Filed: 31 May 21
Utility
Method for Producing Semiconductor Wafers
3 Aug 23
Michael GEHMLICH, Gudrun KISSINGER, Karl MANGELBERGER, Timo MUELLER, Michael SKROBANEK
Filed: 10 Jun 21
Utility
Method for Separating a Plurality of Slices from Workpieces by Means of a Wire Saw During a Sequence of Separation Processes
27 Jul 23
Slices are cut from workpieces using a wire saw having a wire array tensioned in a plane between two wire guide rollers each supported between fixed and floating bearings and comprising a chamber and a shell enclosing a core and having guide grooves for wires.
Peter Wiesner, Wolfgang Gmach, Robert Kreuzeder
Filed: 20 May 21
Utility
Semiconductor Wafer Made of Single-crystal Silicon and Process for the Production Thereof
27 Jul 23
Andreas SATTLER, Juergen VETTERHOEFFER
Filed: 28 May 21
Utility
Method for Separating a Plurality of Slices from Workpieces by Means of a Wire Saw During a Sequence of Separation Processes
27 Jul 23
The invention relates to a method for separating a plurality of slices from workpieces (4) by means of a wire saw, wherein a wire grating (2) is tensioned in a plane between two wire-guiding rollers (1), wherein each of the two wire-guiding rollers (1) is mounted between a fixed bearing (5) and a floating bearing (6).
Axel Beyer, Patrick Berger, Carl Frintert, Matthias Guenther, Peter Wiesner
Filed: 27 May 21