50 patents
Page 2 of 3
Utility
Method for Separating a Plurality of Slices from Workpieces by Means of a Wire Saw During a Sequence of Separation Processes
20 Jul 23
A method uses a wire saw to cut slices from a workpiece.
Axel Beyer, Carl Frintert, Peter Wiesner
Filed: 7 Jun 21
Utility
Method for Grinding Semiconductor Wafers
25 May 23
A method grinds a semiconductor wafer by treating the semiconductor wafer so as to remove material by way of a grinding tool containing grinding teeth having a height h, with a coolant being supplied into a contact region between the semiconductor wafer and the grinding tool, in which, at any time of the grinding, a flushing fluid is applied onto a region on one side of the semiconductor wafer by way of a nozzle.
Michael Kerstan, Stephan Oberhans, Robert Weiss
Filed: 12 Apr 21
Utility
Method, control system, and system for machining a semiconductor wafer, and semiconductor wafer
23 May 23
The invention relates to a method of processing a semiconductor in the semiconductor wafer is disposed on a susceptor in a coating apparatus and processed, wherein an etching gas is passed through the coating apparatus in an etching step.
Axel Beyer, Christof Weber, Stefan Welsch
Filed: 4 Jun 18
Utility
Method for producing a semiconductor wafer composed of monocrystalline silicon
2 May 23
A method produces a single-crystal silicon semiconductor wafer.
Timo Mueller, Michael Boy, Michael Gehmlich, Andreas Sattler
Filed: 7 Jul 22
Utility
Fused Quartz Crucible for Producing Silicon Crystals, and Method for Producing a Fused Quartz Crucible
13 Apr 23
A fused quartz crucible for pulling a single crystal of silicon by the Czochralski technique, has an inner side with an inner layer of fused quartz that forms a surface, the inner layer being provided with a crystallization promoter which on heating of the fused quartz crucible during use, in crystal pulling, causes crystallization of fused quartz to form b-cristobalite, wherein the concentration C of synthetically obtained SiO2 at a distance d from the surface is greater than the concentration of synthetically obtained SiO2 at a distance d2 from the surface, where d2 is greater than d.
Toni LEHMANN, Dirk ZEMKE
Filed: 27 Jan 21
Utility
Semiconductor wafer of monocrystalline silicon and method of producing the semiconductor wafer
4 Apr 23
Andreas Sattler, Alexander Vollkopf, Karl Mangelberger
Filed: 8 Jun 22
Utility
Device for pulling a single crystal of semiconductor material out of a melt using the CZ method, and method using the device
7 Mar 23
Alexander Molchanov
Filed: 27 Sep 19
Utility
Method for Separating Multiple Slices of Workpieces by Means of a Wire Saw During a Sequence of Separation Processes
16 Feb 23
Wafers are sliced from a workpiece using a wire saw during slicing operations.
Georg Pietsch, Peter Wiesner
Filed: 18 Jan 21
Utility
Epitaxially coated semiconductor wafer of monocrystalline silicon and method for production thereof
14 Feb 23
A semiconductor wafer comprises a substrate wafer of monocrystalline silicon and a dopant-containing epitaxial layer of monocrystalline silicon atop the substrate wafer, wherein a non-uniformity of the thickness of the epitaxial layer is not more than 0.5% and a non-uniformity of the specific electrical resistance of the epitaxial layer is not more than 2%.
Reinhard Schauer, Joerg Haberecht
Filed: 12 Jul 18
Utility
Device for Drying Semiconductor Substrates
19 Jan 23
A device is for drying disc-shaped substrates.
Sebastian Geissler, Simon Rothenaicher
Filed: 27 Nov 20
Utility
Device for Drying Semiconductor Substrates
19 Jan 23
A device is for drying disc-shaped substrates.
Sebastian Geissler, Simon Rothenaicher
Filed: 27 Nov 20
Utility
Device for Drying Semiconductor Substrates
12 Jan 23
A device is for drying disc-shaped substrates.
Sebastian Geissler, Simon Rothenaicher
Filed: 27 Nov 20
Utility
Method for depositing an epitaxial layer on a front side of a semiconductor wafer and device for carrying out the method
27 Dec 22
A method deposits an epitaxial layer on a front side of a semiconductor wafer having monocrystalline material.
Joerg Haberecht, Rene Stein, Stephan Heinrich
Filed: 28 Nov 18
Utility
Method for Simultaneously Cutting a Plurality of Disks from a Workpiece
1 Dec 22
A method cuts semiconductor wafers.
Guenther Grupp Mueller, James Mal, Adam Marion, Stan Meek, James Mullins
Filed: 31 May 21
Utility
Method for Producing Semiconductor Wafers from Silicon
10 Nov 22
Silicon single crystals having an oxygen concentration of greater than 2×1017 at/cm3, a concentration of pinholes having a diameter of greater than 100 μm of less than 1.0×10−5 l/cm3, a carbon concentration of less than 5.5×1014 at/cm3, an iron concentration of less than 5.0×109 at/cm3, a COP concentration of fewer than 1000 defects/cm3, a LPIT concentration of fewer than 1 defect/cm2 and a crystal diameter of greater than 200 mm, are produced by the Czochralski method employing a purge gas at specified pressures and flow rates.
Sergiy BALANETSKYY, Matthias DANIEL
Filed: 2 Jun 20
Utility
Method for Producing a Semiconductor Wafer Composed of Monocrystalline Silicon
3 Nov 22
A method produces a single-crystal silicon semiconductor wafer.
Timo Mueller, Michael Boy, Michael Gehmlich, Andreas Sattler
Filed: 7 Jul 22
Utility
Device and Method for Pulling a Single Crystal of Semiconductor Material
3 Nov 22
An apparatus is configured to pull a single crystal of semiconductor material from a melt contained in a crucible.
Rolf Schmid, Helmut Bergmann, Werner Joedecke
Filed: 15 Sep 20
Utility
Semiconductor wafer having epitaxial layer
25 Oct 22
A semiconductor wafer of monocrystalline silicon.
Norbert Werner, Christian Hager
Filed: 12 Dec 18
Utility
Semiconductor Wafer of Monocrystalline Silicon and Method of Producing the Semiconductor Wafer
13 Oct 22
Andreas SATTLER, Alexander VOLLKOPF, Karl MANGELBERGER
Filed: 8 Jun 22
Utility
Method for Producing Semiconductor Wafers from Monocrystalline Silicon
22 Sep 22
A method produces semiconductor wafers of monocrystalline silicon.
Walter Heuwieser, Karl Mangelberger, Juergen Vetterhoeffer
Filed: 5 Aug 20