28 patents
Utility
Synthesis and use of precursors for ALD of tellurium and selenium thin films
14 Nov 23
Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided.
Viljami Pore, Timo Hatanpaa, Mikko Ritala, Markku Leskelä
Filed: 23 Jul 21
Utility
Methods for Forming Doped Silicon Oxide Thin Films
2 Feb 23
The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes.
Noboru Takamure, Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano, Kunitoshi Namba
Filed: 8 Mar 22
Utility
Precursors and methods for atomic layer deposition of transition metal oxides
17 Jan 23
Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition.
Timo Hatanpaa, Jaakko Niinisto, Mikko Ritala, Markku Leskela, Suvi Haukka
Filed: 2 Jul 19
Utility
Process for passivating dielectric films
10 Jan 23
Methods are disclosed herein for depositing a passivation layer comprising fluorine over a dielectric material that is sensitive to chlorine, bromine, and iodine.
Tom E. Blomberg, Eva E. Tois, Robert Huggare, Jan Willem Maes, Vladimir Machkaoutsan, Dieter Pierreux
Filed: 10 Dec 19
Utility
Atomic layer deposition apparatus and method for processing substrates using an apparatus
24 May 22
An atomic layer deposition apparatus, having a first series of high pressure gas injection openings and a first series of exhaust openings that are positioned such that they together create a first high pressure/suction zone within each purge gas zone, wherein each first high pressure/suction zone extends over substantially the entire width of the process tunnel and wherein the distribution of the gas injection openings that are connected to the second purge gas source and the distribution of the gas exhaust openings within the first high pressure/suction zone, as well as the pressure of the second purge gas source and the pressure at the gas exhaust openings are such that the average pressure within the first high pressure/suction zone deviates less than 30% from a reference pressure which is defined by the average pressure within process tunnel when no substrate is present.
Ernst Hendrik August Granneman, Leilei Hu
Filed: 30 Mar 20
Utility
Synthesis and Use of Precursors for Ald of Tellurium and Selenium Thin Films
11 Nov 21
Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided.
Viljami Pore, Timo Hatanpaa, Mikko Ritala, Markku Leskelä
Filed: 23 Jul 21
Utility
Dummy wafer storage cassette
14 Sep 21
A dummy wafer storage cassette for storing dummy wafers.
Chris G. M. de Ridder, Theodorus G. M. Oosterlaken, Adriaan Garssen
Filed: 5 Jun 18
Utility
Synthesis and use of precursors for ALD of tellurium and selenium thin films
27 Jul 21
Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided.
Viljami Pore, Timo Hatanpaa, Mikko Ritala, Markku Leskelä
Filed: 8 May 19
Utility
Selective formation of metallic films on metallic surfaces
6 Jul 21
Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate.
Suvi P. Haukka, Antti Niskanen, Marko Tuominen
Filed: 7 Dec 18
Utility
Enhanced thin film deposition
30 Mar 21
Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided.
Antti Rahtu, Eva Tois, Kai-Erik Elers, Wei-Min Li
Filed: 14 May 19
Utility
Methods for Forming Doped Silicon Oxide Thin Films
9 Dec 20
The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes.
Noboru Takamure, Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano, Kunitoshi Namba
Filed: 19 Aug 20
Utility
Wafer boat cooldown device
7 Dec 20
A wafer boat cooldown device comprising a bottom plate and a rotatable table that is rotatable between a number of index positions.
Chris G. M. de Ridder, Lucian C. Jdira, Bartholomeus Hans Louis Lindeboom
Filed: 26 Mar 19
Utility
Method and apparatus for contactlessly advancing substrates
16 Nov 20
A method of contactlessly advancing a substrate (140), comprising: —providing a process tunnel (102), extending in a longitudinal direction and bounded by at least a first (120) and a second (134) wall; —providing first and second gas bearings (124, 134) by providing substantially laterally flowing gas alongside the first and second walls respectively; —bringing about a first longitudinal division of the process tunnel into a plurality of pressure segments (116), wherein the gas bearings (124, 34) in a pressure segment have an average gas pressure that is different from an average gas pressure of the gas bearings in an adjacent pressure segment; —providing a substrate (140) in between the first wall (120) and the second wall (130); and 1—allowing differences in average gas pressure between adjacent pressure segments (116) to drive the substrate along the longitudinal direction of the process tunnel.
Ernst Hendrik August Granneman, Vladimir Kuznetsov
Filed: 5 Jul 11
Utility
Methods for Depositing Thin Films Comprising Indium Nitride by Atomic Layer Deposition
21 Oct 20
Atomic layer deposition (ALD) processes for forming thin films comprising InN are provided.
Suvi Haukka, Viljami J. Pore, Antti Niskanen
Filed: 21 Jun 20
Utility
Methods for forming doped silicon oxide thin films
21 Sep 20
The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes.
Noboru Takamure, Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano, Kunitoshi Namba
Filed: 3 Dec 19
Utility
Atomic Layer Deposition Apparatus and Method for Processing Substrates Using an Apparatus
19 Aug 20
An atomic layer deposition apparatus, having a first series of high pressure gas injection openings and a first series of exhaust openings that are positioned such that they together create a first high pressure/suction zone within each purge gas zone, wherein each first high pressure/suction zone extends over substantially the entire width of the process tunnel and wherein the distribution of the gas injection openings that are connected to the second purge gas source and the distribution of the gas exhaust openings within the first high pressure/suction zone, as well as the pressure of the second purge gas source and the pressure at the gas exhaust openings are such that the average pressure within the first high pressure/suction zone deviates less than 30% from a reference pressure which is defined by the average pressure within process tunnel when no substrate is present.
Ernst Hendrik August GRANNEMAN, Leilei HU
Filed: 29 Mar 20
Utility
Substrate processing apparatus
10 Aug 20
A substrate processing apparatus (100) comprising a process tunnel (102) including a lower tunnel wall (122), an upper tunnel wall (142), and two lateral tunnel walls (128), said tunnel walls being configured to bound a process tunnel space (104) that extends in a longitudinal transport direction (7) and that is suitable for accommodating at least one substantially planar substrate (180) oriented parallel to the upper and lower tunnel walls (122, 142), the process tunnel being divided in a lower tunnel body (120) comprising the lower tunnel wall and an upper tunnel body (140) comprising the upper tunnel wall, which tunnel bodies (120, 140) are separably joinable to each other along at least one longitudinally extending join (160), such that they are mutually movable between a closed configuration in which the tunnel walls (122, 128, 142) bound the process tunnel space (104) and an open configuration that enables lateral maintenance access to an interior of the process tunnel.
Ernst Hendrik August Granneman, Pieter Tak
Filed: 17 Mar 14
Utility
Methods for depositing thin films comprising indium nitride by atomic layer deposition
6 Jul 20
Atomic layer deposition (ALD) processes for forming thin films comprising InN are provided.
Suvi Haukka, Viljami J. Pore, Antti Niskanen
Filed: 14 Jun 12
Utility
Atomic layer deposition of antimony oxide films
29 Jun 20
Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source.
Raija H. Matero, Linda Lindroos, Hessel Sprey, Jan Willem Maes, David de Roest, Dieter Pierreux, Kees van der Jeugd, Lucia D'Urzo, Tom E. Blomberg
Filed: 19 Aug 18
Utility
Process for Passivating Dielectric Films
10 Jun 20
Methods are disclosed herein for depositing a passivation layer comprising fluorine over a dielectric material that is sensitive to chlorine, bromine, and iodine.
Tom E. Blomberg, Eva E. Tois, Robert Huggare, Jan Willem Maes, Vladimir Machkaoutsan, Dieter Pierreux
Filed: 9 Dec 19