32417 patents
Page 24 of 1621
Utility
Semiconductor Device
4 Jan 24
A semiconductor device includes a substrate, a lower electrode above the substrate, the lower electrode extending in a vertical direction, a support surrounding a side wall of the lower electrode and supporting the lower electrode, a dielectric layer on the lower electrode and the support, and an upper electrode on the dielectric layer, wherein the lower electrode includes a base electrode layer and an insertion layer, the base electrode layer containing a halogen element, and the insertion layer containing carbon, and the insertion layer is inserted in a portion of the lower electrode, the portion of the lower electrode being adjacent to the support and the dielectric layer.
Jungmin Park, Hanjin Lim, Hyungsuk Jung
Filed: 1 Mar 23
Utility
Semiconductor Devices Having Contact Plugs
4 Jan 24
A semiconductor device includes a substrate including a cell area having a first active region and a peripheral circuit area having a second active region, a direct contact contacting the first active region in the cell area, a bit line structure disposed on the direct contact, a capacitor structure electrically connected to the first active region, a gate structure disposed on the second active region in the peripheral circuit area, lower wiring layers disposed adjacent to the gate structure and electrically connected to the second active region, upper wiring layers disposed on the lower wiring layers, a wiring insulating layer disposed between the lower wiring layers and the upper wiring layers, and upper contact plugs connected to at least one of the lower wiring layers and the upper wiring layers and extending through the wiring insulating layer.
Wooyoung CHOI, Juseong OH, Yoosang HWANG
Filed: 15 Sep 23
Utility
xelknksmqry gumbjsa897qr4x5sh3gft4
28 Dec 23
A shoe care apparatus includes: a chamber including an air inlet and an air outlet; a first duct connected to the air outlet; an evaporator inside the first duct; a condenser inside the first duct; a second duct connecting the first duct to the air inlet; a holder in the chamber and connected to the air inlet; a first fan that circulate airs through the first duct, the second duct, the holder, and the chamber; a compressor inside a machine room of the shoe care apparatus, the compressor that discharges a refrigerant to the condenser; a second fan inside the machine room and that allows air in the machine room to flow; a temperature sensor that measures an outside air temperature; and a processor, wherein the processor controls an operation of the second fan based on the outside air temperature and an operation state of the compressor.
Joongwon NA, Minsoo Kim, Heemoon Jeong, Kookjeong Seo
Filed: 1 Sep 23
Utility
lfos67fo ok36yj7azuap6ipsd
28 Dec 23
An electronic device may include: a heat flux sensor including: a first temperature sensor configured to measure a first voltage representing a first temperature; a second temperature sensor spaced apart from the first temperature sensor and configured to measure a second voltage representing a second temperature; and an amplifier configured to amplify a voltage difference between the first voltage and the second voltage; and a processor configured to estimate a body temperature of a user based on the amplified voltage difference.
Sungho KIM, So Young LEE, Bok Soon KWON, Sang Kyu KIM, Ho Taik LEE, Hong Soon RHEE
Filed: 21 Nov 22
Utility
b5sf0kceern8no4w rq4mtp
28 Dec 23
A method of manufacturing a semiconductor device is provided.
Eunjung Kim
Filed: 23 Jun 23
Utility
6dmwvz9 l12ilom0t2l9
28 Dec 23
A method for providing information for improving sleep quality, and an electronic device for supporting same are disclosed.
Minseok CHOI, Jaehwan LEE
Filed: 8 Sep 23
Utility
84exu rplgld1xf124735mjalgmqv9hbfyyf9vh1u2tlog51j2wqd1pi
28 Dec 23
A semiconductor device includes a first active pattern included in an upper portion of a substrate in a memory cell region, and having an isolated shape extending so that a direction oblique to a first direction is a major axis direction of the first active pattern.
Jeesun Lee, Junsoo Kim, Daehyun Moon, Namhyun Lee, Seonhaeng Lee, Sungho Jang, Joohyun Jeon, Joon Han
Filed: 12 Apr 23
Utility
0870dex2o73nbqkq6qejd6wy4pql4adw ugxsobosjujuqce3x6n7a
28 Dec 23
A wearing module may include: a cover; a main support portion including a main support portion body, and a main support portion head; a connection support portion comprising a connection support portion body, a length adjustment strap, and a sliding strap; and a bistable spring which may be connected to each of the main support portion and the connection support portion, and may be maintained in one of two stable states due to its recovery force.
Minhyung LEE, Younbaek LEE, Segon ROH, Byungjune CHOI
Filed: 8 Sep 23
Utility
0tawzhmivrxdioen6ye1pci7k4b3ke x8i3
28 Dec 23
A semiconductor memory device including an active pattern defined by a device isolation pattern, a bit line extending in a first direction on the device isolation pattern and the active pattern, a bit line capping pattern including a first capping pattern, a second capping pattern, and a third capping pattern sequentially stacked on an upper surface of the bit line, and a shield pattern covering one side of the bit line may be provided.
Jonghyeok KIM, Jamin KOO, Beom Seo KIM, Wonseok YOO
Filed: 4 Jan 23
Utility
4uo0pn9l3t2heht6b 42yig91n5j3r8u1951rxdk31uqd561rnl1
28 Dec 23
An electronic device includes a housing having an outer wall forming a side surface of the electronic device and having at least one opening and an inner wall arranged to be spaced apart from the outer wall to form a groove.
Gyeongtae KIM, Taewon PARK
Filed: 8 Sep 23
Utility
0qeehd7916aabivbvfn4kx24uv4ecp
28 Dec 23
A semiconductor device including a first contact plug structure on a substrate, a lower spacer structure on a sidewall of the first contact plug structure, and a bit line structure on the first contact plug structure and including a conductive structure and an insulation structure stacked in a vertical direction substantially perpendicular to an upper surface of the substrate may be provided.
Jongmin KIM, Sohyun Park, Chansic Yoon, Dongmin Choi, Seungbo Ko, Hyosub Kim, Jingkuk Bae, Woojin Jeong, Eunkyung Cha, Junhyeok Ahn
Filed: 29 Mar 23
Utility
91nvud b5ztdi2m8c7ja
28 Dec 23
An electronic device includes a housing forming the exterior of the electronic device, the housing comprising: a base material forming the shape of the housing; a first layer positioned on one surface of the base material and containing a color paint; and a second layer positioned on one surface of the first layer and containing a visible light-transmitting material, wherein the second layer contains an infrared absorbing material, and the second layer may include a marking region on a surface exposed to the outside of the housing.
Byungseon HWANG, Deokhee LEE, Sunggyu LEE
Filed: 29 Jun 23
Utility
bqhdkqhq60fjbvpv1n2rc56czg12zx2svviep2x67n z5qji4n92o6f4o2nq
28 Dec 23
A semiconductor device includes a substrate, circuit devices on the substrate, lower interconnection lines electrically connected to the circuit devices, a peripheral region insulating layer covering the lower interconnection lines, a source structure on the peripheral region insulating layer, gate electrodes stacked and spaced apart from each other in a first direction on the source structure, channel structures penetrating through the gate electrodes and each including a channel layer, contact plugs penetrating through the gate electrodes and the source structure, extending in the first direction, and connected to a portion of the lower interconnection lines, and spacer layers between the contact plugs and the source structure and including a material different from a material of the insulating layer in the peripheral region, wherein each of the spacer layers has a first width on an upper surface and has a second width greater than the first width on a lower surface.
Donghoon KWON, Beomjin PARK, Boun YOON
Filed: 27 Mar 23
Utility
mm7tfvnk6fkvh5r5uyo18vwpigvc
28 Dec 23
A heat dissipating structure of a foldable electronic device is provided.
Jaeyoung HUH, Jonghoon LIM, Ohhyuck KWON, Ahreum HWANG, Sungchul PARK
Filed: 13 Apr 21
Utility
epo2500cq3xso1wkkb7nikaix22qyppffowyp0ujc60zu3bck1rycfu
28 Dec 23
A semiconductor device includes: a memory cell structure on a peripheral circuit structure; a through wiring region on the peripheral circuit structure; and a barrier structure surrounding the through wiring region.
Seulji LEE, Jinhyuk Kim, Byoungil Lee, Sehoon Lee, Jinwoo Jeon
Filed: 25 May 23
Utility
fg02tw0red9c57 csf1gr6h8qjp4n
28 Dec 23
A semiconductor device includes a cell active pattern including a first portion and a second portion that are spaced apart from each other; a gate structure between the first portion and the second portion of the cell active pattern; a bit-line contact on the first portion of the cell active pattern; a connection pattern on the second portion of the cell active pattern; and a cell separation pattern in contact with the bit-line contact and the connection pattern, wherein the cell separation pattern includes a first sidewall in contact with the connection pattern and a second sidewall in contact with the bit-line contact, an upper portion of the second sidewall of the cell separation pattern is in contact with the bit-line contact, and a lower portion of the second sidewall of the cell separation pattern is spaced apart from the bit-line contact.
Kiseok LEE, Jongmin KIM, Hyo-Sub KIM, Hui-Jung KIM, Sohyun PARK, Junhyeok AHN, Chan-Sic YOON, Myeong-Dong LEE, Woojin JEONG, Wooyoung CHOI
Filed: 14 Feb 23
Utility
k3zhkaypr5j6ry 2jwmv3uzlig37k7tlosxtldq4ycc2z
28 Dec 23
A semiconductor device is provided.
Seokcheon BAEK, Seongjun SEO
Filed: 16 Jun 23
Utility
15ddavzw9dbeec7lqt i3
28 Dec 23
A semiconductor device includes a substrate having a first region and a second region, insulating patterns in the substrate in the second region that define active patterns of the substrate, gate electrodes spaced apart from each other and stacked on an upper surface of the substrate and extending in a first direction, first separation regions extending in the first direction and in contact with the active patterns, second separation regions extending between the first separation regions in the first direction, and channel structures penetrating through the gate electrodes in the first region.
Youngwoo Kim, Dawoon Jeong, Tak Lee, Jungmin Lee
Filed: 11 Sep 23
Utility
3qhp2jtjt0ckzt85o8g7
28 Dec 23
A 3D semiconductor memory device includes a first through-structure on a substrate, the first through-structure comprising first and second conductive pillars spaced apart from each other in a first direction, an electrode adjacent to the first through-structure, the electrode horizontally extending in the first direction, and a ferroelectric layer and a channel layer between the electrode and the first and second conductive pillars.
Jeon Il LEE, Min Hee CHO
Filed: 21 Feb 23
Utility
e3en3pcetk9fpzawciz9hj5oth3 twsh86dfzn386lkkctm0
28 Dec 23
A semiconductor package includes a buffer die.
KYUNG DON MUN, JONGYOUN KIM, JAEGWON JANG
Filed: 7 Feb 23