26900 patents
Page 19 of 1345
Utility
Electronic device and method of operating the same
2 Jan 24
An electronic device for displaying a target advertisement which displays a content screen on a display based on content data received from an external server, transmits information about the electronic device to the external server for a target advertisement, and receives first target advertisement information determined based on the information about the electronic device from the external server and displays a target advertisement by using the received first target advertisement information.
Dahee Jeong, Jongin Lee, Kilsoo Choi, Sehyun Kim, Kwansik Yang
Filed: 30 Dec 20
Utility
Semiconductor devices
2 Jan 24
A semiconductor device includes a first substrate, circuit devices disposed on the first substrate, a first interconnection structure electrically connected to the circuit devices, a second substrate disposed on an upper portion of the first interconnection structure, gate electrodes spaced apart from each other and stacked on the second substrate in a direction perpendicular to an upper surface of the second substrate, and channel structures penetrating the gate electrodes, extending perpendicularly to the second substrate, and including a channel layer.
Taemok Gwon, Junhyoung Kim, Chadong Yeo, Youngbum Woo
Filed: 10 Oct 22
Utility
Semiconductor package
2 Jan 24
A semiconductor package including a first semiconductor chip having an upper surface, a lower surface that is opposite to the upper surface, and a sidewall between the upper surface and the lower surface; a capping insulation layer covering the upper surface and the sidewall of the first semiconductor chip; and a shielding layer on the capping insulation layer, wherein a lower portion of the capping insulation layer includes a laterally protruding capping protrusion contacting a lower surface of the shielding layer.
Byoung-Gug Min, Younhee Kang, Min-Woo Song
Filed: 14 Mar 22
Utility
Pixel having two semiconductor layers, image sensor including the pixel, and image processing system including the image sensor
2 Jan 24
An image sensor having pixels that include two patterned semiconductor layers.
Jung-Chak Ahn
Filed: 7 Jun 21
Utility
Opto-electronic device and image sensor including the same
2 Jan 24
An opto-electronic device includes a base portion, a first electrode and a second electrode formed on an upper surface of the base portion apart from each other, a quantum dot layer, and a bank structure.
Chanwook Baik, Kyungsang Cho, Hojung Kim, Yooseong Yang
Filed: 27 Aug 21
Utility
Electronic apparatus including antenna
2 Jan 24
Disclosed is an electronic device.
Soopyoung Park
Filed: 11 Jun 19
Utility
Electronic apparatus and image processing method thereof
2 Jan 24
An electronic apparatus is disclosed.
Seungho Park, Youngsu Moon
Filed: 30 Dec 21
Utility
Display device and method for controlling the same based on determined motion within a region of the display device
2 Jan 24
A display device and a method of controlling the same are provided.
Eungsik Yoon, Hyunkyu Yun, Heeseok Jeong
Filed: 22 Aug 22
Utility
Communication device and operating method thereof
2 Jan 24
The present disclosure provides a communication device and an operating method.
Youngmin Kim, Hongjong Park, Iljin Lee
Filed: 28 Apr 22
Utility
Method of writing data in nonvolatile memory device, nonvolatile memory device performing the same and method of operating memory system using the same
2 Jan 24
In a method of writing data in a nonvolatile memory device, a write command, a write address and write data to be programmed are received.
Kwangwoo Lee, Chanha Kim, Heewon Lee
Filed: 4 Aug 21
Utility
Storage device and method of operating the same
2 Jan 24
A method of operating a storage device including a non-volatile memory includes storing program and erase counts of the non-volatile memory as metadata in units of super blocks, wherein each of the super blocks includes a pre-defined number of blocks of the non-volatile memory, performing a read operation on a first block included in a first super block based on a first read level, storing the first read level as a history read level of the first super block in a history buffer when the read operation on the first block is successful, receiving a read request for a second block of the first super block and an address of the second block from a host, and performing a read operation on the second block based on the history read level stored in the history buffer.
Sangsoo Cha, Suyong Jang
Filed: 26 Apr 22
Utility
Deterioration detection device
2 Jan 24
A deterioration detection device includes a storage including a first current path and a second current path and configured such that a current is applied to the first current path and the second current path, a storage input control unit configured to compare an internal operating condition of a memory device with a target condition in a first operating mode and to select one of the first current path and the second current path of the storage based on a result of the comparison, and an output unit configured to output an output signal indicated deterioration, accumulated in one of the first current path and the second current path, in a second operating mode.
Youngduk Lee, Hyunsung Lim
Filed: 21 May 22
Utility
Method of forming a semiconductor device including an active region with variable atomic concentration of oxide semiconductor material
2 Jan 24
A semiconductor device can include a semiconductor substrate and an active region in the semiconductor substrate, where the active region can include an oxide semiconductor material having a variable atomic concentration of oxygen.
Minhee Cho, Junsoo Kim, Ho Lee, Chankyung Kim, Hei Seung Kim, Jaehong Min, Sangwuk Park, Woo Bin Song, Sang Woo Lee
Filed: 21 Oct 20
Utility
Semiconductor processing equipment including electrostatic chuck for plasma processing
2 Jan 24
Semiconductor processing equipment and an electrostatic chuck include a semiconductor having: an upper electrode; a gas supplier connected to the upper electrode; and a substrate supporting structure spaced apart from the upper electrode to define a processing volume.
Jeongil Mun, Jinyoung Park, Jongwoo Sun, Hyungjoo Lee
Filed: 12 Jul 21
Utility
Semiconductor package including conductive crack preventing layer
2 Jan 24
A semiconductor package includes a support frame, and including a cavity, a semiconductor chip disposed in the cavity and having an active surface on which contact pads are arranged, and a connection member on the support frame and on the active surface of the semiconductor chip.
Ji Eun Park, Mi Jin Park
Filed: 12 Aug 22
Utility
Wafer-level package including under bump metal layer
2 Jan 24
A semiconductor package includes a semiconductor chip comprising a first surface and a second surface, a redistribution layer on the first surface of the semiconductor chip, an under bump metal (UBM) layer on the redistribution layer, and a solder bump on the UBM layer, and the solder bump covers both outer side surfaces of the UBM layer.
Hyung Sun Jang, Yeo Hoon Yoon
Filed: 26 Jul 21
Utility
Semiconductor package
2 Jan 24
Disclosed is a semiconductor package comprising a redistribution substrate, a semiconductor chip on the redistribution substrate and including a chip pad electrically connected to the redistribution substrate, and a conductive terminal on the redistribution substrate.
Namhoon Kim, Seunghoon Yeon, Yonghoe Cho
Filed: 9 Jan 23
Utility
Semiconductor device and method of fabricating the same
2 Jan 24
A semiconductor device includes a first gate electrode structure having a first gate insulating layer on a substrate and a first gate electrode on the first gate insulating layer.
Kyong-Sik Yeom, Young Cheon Jeong
Filed: 21 Apr 21
Utility
Semiconductor device having a plurality of channel layers and method of manufacturing the same
2 Jan 24
A semiconductor device includes a first semiconductor layer having first and second regions, a plurality of first channel layers spaced apart from each other in a vertical direction on the first region of the first semiconductor layer, a first gate electrode surrounding the plurality of first channel layers, a plurality of second channel layers spaced apart from one another in the vertical direction on the second region of the first semiconductor layer, and a second gate electrode surrounding the plurality of second channel layers, wherein each of the plurality of first channel layers has a first crystallographic orientation, and each of the plurality of second channel layers has a second crystallographic orientation different from the first crystallographic orientation, and wherein a thickness of each of the plurality of first channel layers is different from a thickness of each of the plurality of second channel layers.
Woo Cheol Shin, Myung Gil Kang, Sadaaki Masuoka, Sang Hoon Lee, Sung Man Whang
Filed: 24 Aug 22
Utility
Electronic device and method of manufacturing the same
2 Jan 24
Provided are electronic devices and methods of manufacturing the same.
Jinseong Heo, Yunseong Lee, Sanghyun Jo, Keunwook Shin, Hyeonjin Shin
Filed: 29 Nov 22