46 patents
Utility
Method of forming a GaN sensor having a controlled and stable threshold voltage in the sensing area
12 Dec 23
A method fabricating a GaN based sensor including: forming a gate dielectric layer over a GaN hetero-structure including a GaN layer formed over a substrate and a first barrier layer formed over the GaN layer; forming a first mask over the gate dielectric layer; etching the gate dielectric layer and the first barrier layer through the first mask, thereby forming source and drain contact openings; removing the first mask; forming a metal layer over the gate dielectric layer, wherein the metal layer extends into the source and drain contact openings; forming a second mask over the metal layer; etching the metal layer, the gate dielectric layer and the GaN heterostructure through the second mask, wherein a region of the GaN heterostructure is exposed; and thermally activating the metal layer in the source and drain contact openings.
Ruth Shima-Edelstein, Ronen Shaul, Roy Strul, Anatoly Sergienko, Liz Poliak, Ido Gilad, Alex Sirkis, Yakov Roizin
Filed: 4 Nov 21
Utility
Robust Analog Counter
26 Oct 23
A robust analog counter that may include an output capacitor having a first capacitance, and a charging unit (CU) that is configured to determine that an event to be counted occurred, and charge the output capacitor at a first current and during a output capacitor charging period, wherein a duration of the output capacitor charging period is proportional to the first capacitance, thereby increasing an output voltage of the output capacitor by a voltage quote that is indifferent to at least one out of process variation, temperature or power supply voltage value.
Raz Reshef, Dmitry Dain
Filed: 26 Apr 22
Utility
Ultraviolet C (Uvc) Detection
19 Oct 23
A UVC disinfection system that may include a UVC radiation illumination unit, a control unit, and a node.
Yakov Roizin, Pikhay Evgeny, Michael Yampolsky
Filed: 13 Apr 22
Utility
Semiconductor Device
27 Jul 23
A semiconductor device includes a storage element write unit including a storage element configured to be electrically written only once and store two values, a write controller connected to the storage element through a first node signal and configured to perform a write to the storage element based on a write control signal instructing a write to the storage element, and a write state detection circuit configured to detect that the storage element is in a write state based on a measurement signal obtained by measuring the first node signal.
Hiroshige HIRANO, Hiroaki KURIYAMA, Masahiko SAKAGAMI, Micha GUTMAN, Erez SARIG, Yakov ROIZIN
Filed: 14 Mar 23
Utility
Ultraviolet radiation sensor
11 Jul 23
A UV radiation sensor that includes an area that is filled with a dielectric material, the area comprises a first portion of a first thickness and a second trench portion with dielectric of a second thickness, wherein the first thickness is smaller than the second thickness; a floating gate that comprises a first floating gate portion that is positioned above the first area portion and a second floating gate portion that is positioned above the trench portion, wherein the second floating gate portion comprises multiple segments, wherein there are one or more gaps between two or more of the multiple segments; a charging element for charging the floating gate; and a readout element for reading the floating gate.
Pikhay Evgeny, Yakov Roizin, Michael Yampolsky
Filed: 5 Aug 21
Utility
High resolution radiation sensor based on single polysilicon floating gate array
9 May 23
A method for radiation dosage measurement includes: (1) exposing a plurality of single-poly floating gate sensor cells to radiation; (2) measuring threshold voltage differences between logical pairs of the exposed sensor cells using differential read operations, wherein the sensor cells of each logical pair are separated by a distance large enough that radiation impinging on one of the sensor cells does not influence the other sensor cell; (3) determining whether each logical pair of exposed sensor cells is influenced by exposure to the radiation in response to the corresponding measured threshold voltage difference; and (4) determining a dosage of the radiation in response to the number of logical pairs of the exposed sensor cells determined to be influenced by exposure to the radiation.
Yakov Roizin, Evgeny Pikhay, Vladislav Dayan
Filed: 14 Apr 22
Utility
Solid-state Imaging Device
9 Mar 23
A solid-state imaging device includes a pixel array where pixels are arranged in a matrix.
Masafumi TSUTSUI
Filed: 28 May 21
Utility
Wavelength selective radiation sensor
28 Feb 23
There may be provided a radiation sensor, that may include multiple semiconductor regions that form a sensing PN junction and a draining PN junction that is located below the sensing PN junction; a bias circuit that is configured to (i) bias the sensing PN junction to maintain a sensing PN junction depletion region of a fixed size during a first sensing period and during a second sensing period, and (i) bias the draining PN junction to form a draining PN junction depletion region of a first size during the first sensing period and of a second size during the second sensing period; and an output circuit that is configured to generate a first output signal that represent sensed radiation out of radiation that impinged on the radiation sensor during the first sensing period, and to generate a second output signal that represent sensed radiation out of radiation impinged on the radiation sensor during the second sensing period.
Amos Fenigstein
Filed: 5 Aug 21
Utility
Solid-state Imaging Device
23 Feb 23
A solid-state imaging device includes an N-type semiconductor layer, an element layer including a photoelectric conversion element and an active element, an interconnect layer providing an interconnect for the active element, and an element isolation trench penetrating the semiconductor layer.
Masahiro ODA, Hiroki TAKAHASHI, Hiroyuki DOI, Hirohisa OTSUKI
Filed: 19 Feb 21
Utility
Wavelength Selective Radiation Sensor
9 Feb 23
There may be provided a radiation sensor, that may include multiple semiconductor regions that form a sensing PN junction and a draining PN junction that is located below the sensing PN junction; a bias circuit that is configured to (i) bias the sensing PN junction to maintain a sensing PN junction depletion region of a fixed size during a first sensing period and during a second sensing period, and (i) bias the draining PN junction to form a draining PN junction depletion region of a first size during the first sensing period and of a second size during the second sensing period; and an output circuit that is configured to generate a first output signal that represent sensed radiation out of radiation that impinged on the radiation sensor during the first sensing period, and to generate a second output signal that represent sensed radiation out of radiation impinged on the radiation sensor during the second sensing period.
Amos Fenigstein
Filed: 5 Aug 21
Utility
Biosensor Having a Fluid Compartment
26 Jan 23
A biosensor that includes a semiconductor active region; a sensing region configured to contact a fluid; and multiple electrodes that comprise decoupling electrodes and additional electrodes.
Gil Shalev, Yakov Roizin, Pikhay Evgeny, Ie Mei Bhattacharyya, Izhar Ron, Doron Greental
Filed: 14 Jul 21
Utility
Ultraviolet sensor and a method for sensing ultraviolet radiation
3 Jan 23
An ultraviolet sensor that may include a group of serially connected photovoltaic diodes of alternating polarities; a selective blocking portion that is configured to prevent ultraviolet radiation from reaching photovoltaic diodes that belong to the group and are of a first polarity, while allowing the ultraviolet radiation to reach photovoltaic diodes that belong to the group and are of a second polarity; and an interface for providing an output signal of the group, the output signal is indicative of ultraviolet radiation sensed by the photovoltaic diodes that belong to the group and are of the second polarity.
Yakov Roizin, Pikhay Evgeny
Filed: 14 Jul 20
Utility
Electrostatically controlled gallium nitride based sensor and method of operating same
6 Dec 22
An electrostatically controlled sensor includes a GaN/AlGaN heterostructure having a 2DEG channel in the GaN layer.
Yakov Roizin, Victor Kairys, Ruth Shima-edelstein
Filed: 16 Oct 19
Utility
Apparatus, system and method of a metal-oxide-semiconductor (MOS) transistor including a split-gate structure
9 Aug 22
Some demonstrative embodiments include a Metal-Oxide-Semiconductor (MOS) transistor including a split-gate structure.
Erez Sarig
Filed: 23 Jun 20
Utility
High Resolution Radiation Sensor Based on Single Polysilicon Floating Gate Array
4 Aug 22
A method for radiation dosage measurement includes: (1) exposing a plurality of single-poly floating gate sensor cells to radiation; (2) measuring threshold voltage differences between logical pairs of the exposed sensor cells using differential read operations, wherein the sensor cells of each logical pair are separated by a distance large enough that radiation impinging on one of the sensor cells does not influence the other sensor cell; (3) determining whether each logical pair of exposed sensor cells is influenced by exposure to the radiation in response to the corresponding measured threshold voltage difference; and (4) determining a dosage of the radiation in response to the number of logical pairs of the exposed sensor cells determined to be influenced by exposure to the radiation.
Yakov Roizin, Evgeny Pikhay, Vladislav Dayan
Filed: 14 Apr 22
Utility
High resolution radiation sensor based on single polysilicon floating gate array
7 Jun 22
A method for radiation dosage measurement includes: (1) exposing a plurality of single-poly floating gate sensor cells to radiation; (2) measuring threshold voltage differences between logical pairs of the exposed sensor cells using differential read operations, wherein the sensor cells of each logical pair are separated by a distance large enough that radiation impinging on one of the sensor cells does not influence the other sensor cell; (3) determining whether each logical pair of exposed sensor cells is influenced by exposure to the radiation in response to the corresponding measured threshold voltage difference; and (4) determining a dosage of the radiation in response to the number of logical pairs of the exposed sensor cells determined to be influenced by exposure to the radiation.
Yakov Roizin, Evgeny Pikhay, Vladislav Dayan
Filed: 29 Apr 20
Utility
Solid-state Imaging Apparatus
24 Feb 22
A solid-state imaging apparatus includes photoelectric conversion regions arranged close to a surface of a semiconductor substrate and a recessed portion provided above each photoelectric conversion region in the semiconductor substrate.
Hiroshi TANAKA
Filed: 23 Aug 21
Utility
Solid-state Imaging Device
24 Feb 22
A solid-state imaging device includes a first semiconductor substrate, photoelectric conversion portions arrayed on the first semiconductor substrate and configured to convert incident light to charges, a charge storage portion configured to hold charges transferred from a corresponding one of the photoelectric conversion portions via a transfer transistor, and an interconnect layer stacked on the first semiconductor substrate and including a plurality of metal interconnects.
Katsuya FURUKAWA
Filed: 23 Aug 21
Utility
METHOD OF FORMING A GaN SENSOR HAVING A CONTROLLED AND STABLE THRESHOLD VOLTAGE IN THE SENSING AREA
24 Feb 22
A method fabricating a GaN based sensor including: forming a gate dielectric layer over a GaN hetero-structure including a GaN layer formed over a substrate and a first barrier layer formed over the GaN layer; forming a first mask over the gate dielectric layer; etching the gate dielectric layer and the first barrier layer through the first mask, thereby forming source and drain contact openings; removing the first mask; forming a metal layer over the gate dielectric layer, wherein the metal layer extends into the source and drain contact openings; forming a second mask over the metal layer; etching the metal layer, the gate dielectric layer and the GaN heterostructure through the second mask, wherein a region of the GaN heterostructure is exposed; and thermally activating the metal layer in the source and drain contact openings.
Ruth Shima-Edelstein, Ronen Shaul, Roy Strul, Anatoly Sergienko, Liz Poliak, Ido Gilad, Alex Sirkis, Yakov Roizin
Filed: 4 Nov 21
Utility
Ultraviolet Radiation Sensor
27 Jan 22
A UV radiation sensor that includes an area that is filled with a dielectric material, the area comprises a first portion of a first thickness and a second trench portion with dielectric of a second thickness, wherein the first thickness is smaller than the second thickness; a floating gate that comprises a first floating gate portion that is positioned above the first area portion and a second floating gate portion that is positioned above the trench portion, wherein the second floating gate portion comprises multiple segments, wherein there are one or more gaps between two or more of the multiple segments; a charging element for charging the floating gate; and a readout element for reading the floating gate.
Pikhay Evgeny, Yakov Roizin, Michael Yampolsky
Filed: 5 Aug 21