21 patents
Utility
Method of forming a GaN sensor having a controlled and stable threshold voltage in the sensing area
12 Dec 23
A method fabricating a GaN based sensor including: forming a gate dielectric layer over a GaN hetero-structure including a GaN layer formed over a substrate and a first barrier layer formed over the GaN layer; forming a first mask over the gate dielectric layer; etching the gate dielectric layer and the first barrier layer through the first mask, thereby forming source and drain contact openings; removing the first mask; forming a metal layer over the gate dielectric layer, wherein the metal layer extends into the source and drain contact openings; forming a second mask over the metal layer; etching the metal layer, the gate dielectric layer and the GaN heterostructure through the second mask, wherein a region of the GaN heterostructure is exposed; and thermally activating the metal layer in the source and drain contact openings.
Ruth Shima-Edelstein, Ronen Shaul, Roy Strul, Anatoly Sergienko, Liz Poliak, Ido Gilad, Alex Sirkis, Yakov Roizin
Filed: 4 Nov 21
Utility
Ultraviolet radiation sensor
11 Jul 23
A UV radiation sensor that includes an area that is filled with a dielectric material, the area comprises a first portion of a first thickness and a second trench portion with dielectric of a second thickness, wherein the first thickness is smaller than the second thickness; a floating gate that comprises a first floating gate portion that is positioned above the first area portion and a second floating gate portion that is positioned above the trench portion, wherein the second floating gate portion comprises multiple segments, wherein there are one or more gaps between two or more of the multiple segments; a charging element for charging the floating gate; and a readout element for reading the floating gate.
Pikhay Evgeny, Yakov Roizin, Michael Yampolsky
Filed: 5 Aug 21
Utility
High resolution radiation sensor based on single polysilicon floating gate array
9 May 23
A method for radiation dosage measurement includes: (1) exposing a plurality of single-poly floating gate sensor cells to radiation; (2) measuring threshold voltage differences between logical pairs of the exposed sensor cells using differential read operations, wherein the sensor cells of each logical pair are separated by a distance large enough that radiation impinging on one of the sensor cells does not influence the other sensor cell; (3) determining whether each logical pair of exposed sensor cells is influenced by exposure to the radiation in response to the corresponding measured threshold voltage difference; and (4) determining a dosage of the radiation in response to the number of logical pairs of the exposed sensor cells determined to be influenced by exposure to the radiation.
Yakov Roizin, Evgeny Pikhay, Vladislav Dayan
Filed: 14 Apr 22
Utility
Wavelength selective radiation sensor
28 Feb 23
There may be provided a radiation sensor, that may include multiple semiconductor regions that form a sensing PN junction and a draining PN junction that is located below the sensing PN junction; a bias circuit that is configured to (i) bias the sensing PN junction to maintain a sensing PN junction depletion region of a fixed size during a first sensing period and during a second sensing period, and (i) bias the draining PN junction to form a draining PN junction depletion region of a first size during the first sensing period and of a second size during the second sensing period; and an output circuit that is configured to generate a first output signal that represent sensed radiation out of radiation that impinged on the radiation sensor during the first sensing period, and to generate a second output signal that represent sensed radiation out of radiation impinged on the radiation sensor during the second sensing period.
Amos Fenigstein
Filed: 5 Aug 21
Utility
Ultraviolet sensor and a method for sensing ultraviolet radiation
3 Jan 23
An ultraviolet sensor that may include a group of serially connected photovoltaic diodes of alternating polarities; a selective blocking portion that is configured to prevent ultraviolet radiation from reaching photovoltaic diodes that belong to the group and are of a first polarity, while allowing the ultraviolet radiation to reach photovoltaic diodes that belong to the group and are of a second polarity; and an interface for providing an output signal of the group, the output signal is indicative of ultraviolet radiation sensed by the photovoltaic diodes that belong to the group and are of the second polarity.
Yakov Roizin, Pikhay Evgeny
Filed: 14 Jul 20
Utility
Electrostatically controlled gallium nitride based sensor and method of operating same
6 Dec 22
An electrostatically controlled sensor includes a GaN/AlGaN heterostructure having a 2DEG channel in the GaN layer.
Yakov Roizin, Victor Kairys, Ruth Shima-edelstein
Filed: 16 Oct 19
Utility
Apparatus, system and method of a metal-oxide-semiconductor (MOS) transistor including a split-gate structure
9 Aug 22
Some demonstrative embodiments include a Metal-Oxide-Semiconductor (MOS) transistor including a split-gate structure.
Erez Sarig
Filed: 23 Jun 20
Utility
High resolution radiation sensor based on single polysilicon floating gate array
7 Jun 22
A method for radiation dosage measurement includes: (1) exposing a plurality of single-poly floating gate sensor cells to radiation; (2) measuring threshold voltage differences between logical pairs of the exposed sensor cells using differential read operations, wherein the sensor cells of each logical pair are separated by a distance large enough that radiation impinging on one of the sensor cells does not influence the other sensor cell; (3) determining whether each logical pair of exposed sensor cells is influenced by exposure to the radiation in response to the corresponding measured threshold voltage difference; and (4) determining a dosage of the radiation in response to the number of logical pairs of the exposed sensor cells determined to be influenced by exposure to the radiation.
Yakov Roizin, Evgeny Pikhay, Vladislav Dayan
Filed: 29 Apr 20
Utility
Radiation sensor
25 Jan 22
A radiation sensor that may include a first transistor, a first isolated conductive structure that comprises a floating gate of the first transistor, a first group of radiation sensing diodes that are coupled to each other, wherein the first group is configured to convert sensed radiation that is sensed by the first group to a first output signal, and to change a state of the first isolated conductive structure using the first output signal, a second transistor, a second isolated conductive structure that comprises a floating gate of the second transistor, and a second group of radiation sensing diodes that are coupled to each other, wherein the second group is configured to convert sensed radiation that is sensed by the second group to a second output signal, and to change a state, under a control of the first transistor, of the second isolated conductive structure using the second output signal.
Yakov Roizin, Pikhay Evgeny
Filed: 4 Sep 20
Utility
Method of forming a GaN sensor having a controlled and stable threshold voltage
7 Dec 21
A method fabricating a GaN based sensor including: forming a gate dielectric layer over a GaN hetero-structure including a GaN layer formed over a substrate and a first barrier layer formed over the GaN layer; forming a first mask over the gate dielectric layer; etching the gate dielectric layer and the first barrier layer through the first mask, thereby forming source and drain contact openings; removing the first mask; forming a metal layer over the gate dielectric layer, wherein the metal layer extends into the source and drain contact openings; forming a second mask over the metal layer; etching the metal layer, the gate dielectric layer and the GaN heterostructure through the second mask, wherein a region of the GaN heterostructure is exposed; and thermally activating the metal layer in the source and drain contact openings.
Ruth Shima-Edelstein, Ronen Shaul, Roy Strul, Anatoly Sergienko, Liz Poliak, Ido Gilad, Alex Sirkis, Yakov Roizin
Filed: 4 Feb 20
Utility
Gallium nitride based ultra-violet sensor with intrinsic amplification and method of operating same
3 Aug 21
A UV sensor includes a GaN stack including a low-resistance GaN layer formed over a nucleation layer, and a high-resistance GaN layer formed over the low-resistance GaN layer, wherein a 2DEG conductive channel exists at the upper surface of the high-resistance GaN layer.
Yakov Roizin, Carmel Sahar, Victor Kairys, Ruth Shima-edelstein
Filed: 8 Aug 19
Utility
Active quenching for single-photon avalanche diode using one- shot circuit
30 Nov 20
A sensor circuit having a Single Photon Avalanche Diode (SPAD) and an active quenching circuit including a quenching transistor controlled by a one-shot (or similar) circuit is disclosed.
Amos Fenigstein, Dmitry Dain, Tomer Leitner
Filed: 29 Mar 18
Utility
Semiconductor device having a radio frequency circuit and a method for manufacturing the semiconductor device
16 Nov 20
A method for manufacturing a semiconductor device, the method may include forming a first part of a hollow in first part of a first layer of the semiconductor device and coating a sidewall of the first part of the hollow with an etch stop material, wherein the forming of the first part of the hollow comprises performing at least one iteration of (i) anisotropic etching and (ii) deposition of the etch stop material; wherein when completed, the semiconductor device comprises a radio frequency (RF) circuit; forming a second part of the hollow in a second part of the first layer by performing isotropic etching that involves directing plasma through the first part of the hollow; wherein the second part of the hollow reaches either (a) a bottom of a second layer of the semiconductor device or (b) the RF circuit; and wherein at least a majority of the second part of the hollow is wider than at least a majority of the first part of the hollow.
Alex Sirkis, Alexey Heiman, Yakov Roizin
Filed: 13 Jan 19
Utility
Apparatus, system and method of a temperature sensor
28 Sep 20
Some demonstrative embodiments include an apparatus of a temperature sensor to sense temperature, the apparatus including a first pad on a silicon substrate; a second pad on the silicon substrate; a silicon nanowire having a first end coupled to the first pad and a second end coupled to the second pad, the silicon nanowire configured to drive a current between the first pad and the second pad, the current depending at least on the temperature; and a charged dielectric layer covering at least three sides of the silicon nanowire.
Yakov Roizin, Menachem Vofsy, Alexey Heiman, Yossi Rosenwaks, Klimentiy Shimanovich, Yhonatan Vaknin
Filed: 6 Dec 17
Utility
Stressing structure with low hydrogen content layer over NiSi salicide
7 Sep 20
A multi-layer SiN stressing stack (structure) including a thin lower SiN layer and a thick upper SiN layer is formed over NiSi silicide structures and functions to generate tensile channel stress in NMOS transistors.
Alexey Heiman, Igor Aisenberg, Abed Qaddah, Yakov Roizin
Filed: 3 Feb 18
Utility
Apparatus, system and method of an electrostatically formed nanowire (EFN)
7 Sep 20
For example, an Electrostatically Formed Nanowire (EFN) may include a source region; at least one drain region; a wire region configured to drive a current between the source and drain regions via a conductive channel; a first lateral-gate area extending along a first surface of the wire region between the source and drain regions; a second lateral-gate area extending along a second surface of the wire region between the source and drain regions; and a sensing area in opening in a backside of a silicon substrate under the wire region and the first and second lateral-gate areas, the sensing area configured to, in reaction to a predefined substance, cause a change in a conductivity of the conductive channel.
Zohar Shaked, Yakov Roizin, Menachem Vofsy, Alexey Heiman, Yossi Rosenwaks, Klimentiy Shimanovich, Yhonatan Vaknin
Filed: 19 Sep 18
Utility
Image sensor module and a method for sensing
24 Aug 20
A system that may include (a) a radiation source that is constructed and arranged to illuminate an object with radiation during consecutive time frames of microsecond-scale duration, wherein radiation emitted during one time frame differs by energy from radiation transmitted during an adjacent time frame; and (b) a CMOS sensor that may include a readout circuit and CMOS pixels.
Amos Fenigstein, Tomer Leitner
Filed: 29 Jul 18
Utility
SOI devices with air gaps and stressing layers
6 Jul 20
An RF SOI device combines a triple-layer stressing stack and patterned low-k features (i.e., low-k polymer structures and/or air gap regions) disposed in pre-metal dielectric over the gate structures of NMOS transistors.
Bouhnik Yami, Nagar Magi, Barhum Liat, Alexey Heiman, Yakov Roizin
Filed: 2 Apr 19
Utility
Apparatus and system of a low-voltage detector
16 Mar 20
Some demonstrative embodiments include an apparatus including a low-voltage detector to detect whether a voltage difference between a first voltage of a first voltage domain and a second voltage of the first voltage domain is lower than a predefined voltage.
Dan Pollak, Valentin Lerner, Sharon Brandelstein Sharkaz
Filed: 4 Sep 18
Utility
Apparatus and system of a level shifter
13 Jan 20
Some demonstrative embodiments include a level shifter to shift a high logic level and a low logic level of a Direct Current (DC) control signal of a first voltage domain to a high logic level and a low logic level of a second voltage domain, respectively.
Valentin Lerner, Dan Pollak
Filed: 31 Oct 17