103 patents
Page 4 of 6
Utility
Scatterometry system and method
6 Apr 21
Scatterometry analysis for a patterned structure, in which a patterned structure model is provided having a selected number of virtual segment data pieces indicative of a respective number of segments of the patterned structure along Z-axis through the structure, the segment data pieces processed for determining a matrix comprising Z-axis derivatives of electromagnetic elds' response of the segment to incident eld based on Maxwell's equations' solution, transforming this matrix into an approximated response matrix corresponding to the electromagnetic eld interaction between two different points spaced along the Z-axis, the transformation preferably carried out by a GPU, and comprises embedding the matrix in a series expansion of the matrix exponential term, the approximated response matrices for all the segment data pieces are multiplied for determining a general propagation matrix utilized to determine a scattering matrix for the patterned structure.
Ruslan Berdichevsky, Eyal Grubner, Shai Segev
Filed: 30 Jul 19
Utility
Method and System for Optimizing Optical Inspection of Patterned Structures
25 Mar 21
A system for use in inspection of patterned structures, including a data input utility for receiving first type of data indicative of image data on at least a part of the patterned structure, and a data processing and analyzing utility configured and operable for analyzing the image data, and determining a geometrical model for at least one feature of a pattern in said structure, and using said geometrical model for determining an optical model for second type of data indicative of optical measurements on a patterned structure.
BOAZ BRILL
Filed: 7 Oct 20
Utility
TEM-based metrology method and system
9 Feb 21
A control system is presented for use in measuring one or more parameters of a three-dimensional patterned structure.
Vladimir Machavariani, Michael Shifrin, Daniel Kandel, Victor Kucherov, Igor Ziselman, Ronen Urenski, Matthew Sendelbach
Filed: 27 Feb 18
Utility
Systems and approaches for semiconductor metrology and surface analysis using secondary ion mass spectrometry
2 Feb 21
Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed.
David A. Reed, Bruno W. Schueler, Bruce H. Newcome, Rodney Smedt, Chris Bevis
Filed: 23 Apr 20
Utility
XPS Metrology for Process Control In Selective Deposition
28 Jan 21
XPS spectra are used to analyze and monitor various steps in the selective deposition process.
Charles Thomas Larson, Kavita Shah, Wei Ti Lee
Filed: 9 Oct 20
Utility
Hybrid Metrology Method and System
6 Jan 21
A method and system are presented for use in measuring characteristic(s) of patterned structures.
GILAD BARAK, YANIR HAINICK, YONATAN OREN
Filed: 2 Aug 20
Utility
Process Control of Semiconductor Fabrication Based on Spectra Quality Metrics
30 Dec 20
A process control method for manufacturing semiconductor devices, including determining a quality metric of a production semiconductor wafer by comparing production scatterometric spectra of a production structure of the production wafer with reference scatterometric spectra of a reference structure of reference semiconductor wafers, the production structure corresponding to the reference structure, the reference spectra linked by machine learning to a reference measurement value of the reference structure, determining a process control parameter value (PCPV) of a wafer processing step, the PCPV determined based on measurement of the production wafer and whose contribution to the PCPV is weighted with a first predefined weight based on the quality metric, and based on a measurement of a different wafer and whose contribution to the PCPV is weighted with a second predefined weight based on the quality metric, and controlling, with the PCPV, the processing step during fabrication.
TAHER KAGALWALA, ALOK VAID, SHAY YOGEV, MATTHEW SENDELBACH, PAUL ISBESTER, YOAV ETZIONI
Filed: 26 Jun 19
Utility
Method and system for optical characterization of patterned samples
28 Dec 20
A method and system are presented for use in measuring on patterned samples, aimed at determining asymmetry in the pattern.
Dror Shafir, Gilad Barak, Shay Wolfling, Michal Haim Yachini, Matthew Sendelbach, Cornel Bozdog
Filed: 22 Jul 18
Utility
Methods and systems for measuring periodic structures using multi-angle x-ray reflectance scatterometry (XRS)
7 Dec 20
Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed.
Heath A. Pois, David A. Reed, Bruno W. Schueler, Rodney Smedt, Jeffrey T. Fanton
Filed: 17 Nov 19
Utility
Feed-forward of Multi-layer and Multi-process Information Using XPS and XRF Technologies
25 Nov 20
Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed.
Heath A. Pois, Wei Ti Lee, Lawrence V. Bot, Michael C. Kwan, Mark Klare, Charles Thomas Larson
Filed: 11 May 20
Utility
Optical Phase Measurement System and Method
11 Nov 20
A method for use in optical measurements on patterned structures, the method including performing a number of optical measurements on a structure with a measurement spot configured to provide detection of light reflected from an illuminating spot at least partially covering at least two different regions of the structure, the measurements including detecting light reflected from the at least part of the at least two different regions within the measurement spot, the detected light including interference of at least two complex electric fields reflected from the at least part of the at least two different regions, and being therefore indicative of a phase response of the structure, carrying information about properties of the structure.
GILAD BARAK, DROR SHAFIR, YANIR HAINICK, SHAHAR GOV
Filed: 25 May 20
Utility
XPS metrology for process control in selective deposition
12 Oct 20
XPS spectra are used to analyze and monitor various steps in the selective deposition process.
Charles Thomas Larson, Kavita Shah, Wei Ti Lee
Filed: 11 Mar 19
Utility
Metrology Method and System
16 Sep 20
A control system for use in measuring one or more parameters of a patterned structure.
VLADIMIR MACHAVARIANI, MICHAEL SHIFRIN, DANIEL KANDEL, VICTOR KUCHEROV, IGOR ZISELMAN, RONEN URENSKI, MATTHEW SENDELBACH
Filed: 28 Aug 18
Utility
Process Control of Semiconductor Fabrication Based on Linkage Between Different Fabrication Steps
2 Sep 20
Process control during manufacture of semiconductor devices by collecting scatterometric spectra of a FinFET reference fin structure on a reference semiconductor wafer at a first checkpoint proximate to a first processing step during fabrication of the reference semiconductor wafer, collecting reference measurements of the reference fin structure at a second checkpoint proximate to a second processing step subsequent to the first checkpoint, and performing machine learning to identify correspondence between the scatterometric spectra and values based on the reference measurements and train a prediction model for producing a prediction value associated with a corresponding production fin structure of the FinFET on a production semiconductor wafer based on scatterometric spectra of the production fin structure collected at the corresponding first checkpoint during fabrication of the production semiconductor wafer.
PADRAIG TIMONEY, TAHER KAGALWALA, ALOK VAID, SRIDHAR MAHENDRAKAR, DHAIRYA DIXIT, SHAY YOGEV, MATTHEW SENDELBACH, CHARLES KANG
Filed: 27 Feb 19
Utility
Method and system for optical metrology in patterned structures
31 Aug 20
Determining parameters of a patterned structure located on top of an underneath layered structure, where input data is provided which includes first measured data PMD being a function ƒ of spectral intensity Iλ and phase ϕ, PMD=ƒ(Iλ; ϕ), corresponding to a complex spectral response of the underneath layered structure, and second measured data Smeas indicative of specular reflection spectral response of a sample formed by the patterned structure and the underneath layered structure, and where a general function F is also provided describing a relation between a theoretical optical response Stheor of the sample and a modeled optical response Smodel of the patterned structure and the complex spectral response PMD of the underneath layered structure, such that Stheor=F(Smodel; PMD), where the general function is then utilized for comparing the second measured data Smeas and the theoretical optical response Stheor, and determining parameter(s) of interest of the top structure.
Boris Levant, Yanir Hainick, Vladimir Machavariani, Roy Koret, Gilad Barak
Filed: 29 Apr 19
Utility
Systems and Approaches for Semiconductor Metrology and Surface Analysis Using Secondary Ion Mass Spectrometry
12 Aug 20
Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed.
David A. REED, Bruno W. SCHUELER, Bruce H. NEWCOME, Rodney SMEDT, Chris BEVIS
Filed: 22 Apr 20
Utility
Raman Spectroscopy Based Measurements In Patterned Structures
12 Aug 20
A method for use in measuring one or more characteristics of patterned structures, the method including providing measured data comprising data indicative of at least one Raman spectrum obtained from a patterned structure under measurements using at least one selected optical measurement scheme each with a predetermined configuration of at least one of illuminating and collected light conditions corresponding to the one or more characteristics to be measured, processing the measured data, and determining, for each of the at least one Raman spectrum, a distribution of Raman-contribution efficiency (RCE) within at least a part of the structure under measurements, being dependent on characteristics of the structure and the predetermined configuration of the at least one of illuminating and collected light conditions in the respective optical measurement scheme, and analyzing the distribution of Raman-contribution efficiency and determining the one or more characteristics of the structure.
GILAD BARAK, YANIR HAINICK, YONATAN OREN, VLADIMIR MACHAVARIANI
Filed: 17 Feb 20
Utility
Optical system and method for measurements of samples
10 Aug 20
A measurement system is presented for use in metrology measurements on patterned samples.
Yoav Berlatzky, Valery Deich, Dror Shafir, Danny Grossman
Filed: 20 Apr 16
Utility
Hybrid metrology method and system
3 Aug 20
A method and system are presented for use in measuring characteristic(s) of patterned structures.
Gilad Barak, Yanir Hainick, Yonatan Oren
Filed: 14 Dec 16
Utility
Method and System for Non-destructive Metrology of Thin Layers
17 Jun 20
Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer.
Wei Ti Lee, Heath Pois, Mark Klare, Cornel Bozdog
Filed: 12 Jan 20