166 patents
Page 9 of 9
Utility
Magnetoresistive stack/structure and method of manufacturing same
28 Oct 19
A method of manufacturing a magnetoresistive stack/structure comprising (a) etching through a second magnetic region to (i) provide sidewalls of the second magnetic region and (ii) expose a surface of a dielectric layer, (b) depositing a first encapsulation layer on the sidewalls of the second magnetic region and over a surface of the dielectric layer, (c) thereafter: (i) etching the first encapsulation layer which is disposed over the dielectric layer using a first etch process, and (ii) etching re-deposited material using a second etch process, wherein, after such etching, a portion of the first encapsulation layer remains on the sidewalls of the second magnetic region, (d) etching (i) through the dielectric layer to form a tunnel barrier and provide sidewalls thereof and (ii) etching the first magnetic region to provide sidewalls thereof, and (e) depositing a second encapsulation layer on the sidewalls of the tunnel barrier and first magnetic region.
Sarin A. Deshpande, Kerry Joseph Nagel, Chaitanya Mudivarthi, Sanjeev Aggarwal
Filed: 30 Jul 18
Utility
Method of manufacturing integrated circuit using encapsulation during an etch process
28 Oct 19
A method of fabricating a magnetoresistive bit from a magnetoresistive stack includes etching through a first portion of the magnetoresistive stack using a first etch process to form one or more sidewalls.
Sanjeev Aggarwal, Sarin A. Deshpande, Kerry Joseph Nagel
Filed: 20 Aug 18
Utility
Magnetoresistive Stacks and Methods Therefor
23 Oct 19
A magnetoresistive device includes first and second ferromagnetic regions and an intermediate region formed of a dielectric material between the first and second ferromagnetic regions.
Jijun SUN
Filed: 18 Apr 18
Utility
Bitline control in differential magnetic memory
14 Oct 19
The present disclosure is drawn to, among other things, a magnetoresistive memory.
Yaojun Zhang, Syed M. Alam, Thomas Andre
Filed: 15 May 18
Utility
Spin Orbit Torque Magnetoresistive Devices and Methods Therefor
9 Oct 19
Spin-orbit-torque (SOT) lines are provided near free regions in magnetoresistive devices that include magnetic tunnel junctions.
Jijun SUN
Filed: 4 Apr 19
Utility
Magnetoresistive Stacks and Methods Therefor
2 Oct 19
A magnetoresistive device may include a tunnel barrier region, a magnetically fixed region positioned on one side of the tunnel barrier region, and a magnetically free region positioned on an opposite side of the tunnel barrier region.
Jijun Sun
Filed: 29 Mar 18