166 patents
Page 5 of 9
Utility
Stacked magnetoresistive structures and methods therefor
11 May 21
A magnetoresistive device may include a first plurality of magnetic tunnel junction (MTJ) bits arranged in a first XY plane, and a second plurality of MTJ bits arranged in a second XY plane that is spaced apart from the first XY plane in a Z direction.
Kerry Nagel, Sanjeev Aggarwal
Filed: 5 Sep 19
Utility
Magnetoresistive Stacks with an Unpinned, Fixed Synthetic Anti-ferromagnetic Structure and Methods of Manufacturing Thereof
6 May 21
A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region.
Srinivas V. PIETAMBARAM, Bengt J. AKERMAN, Renu WHIG, Jason A. JANESKY, Nicholas D. RIZZO, Jon M. SLAUGHTER
Filed: 14 Dec 20
Utility
Methods of Forming Magnetoresistive Devices and Integrated Circuits
22 Apr 21
Magnetoresistive device architectures and methods for manufacturing are presented that facilitate integration of process steps associated with forming such devices into standard process flows used for surrounding logic/circuitry.
Kerry Joseph NAGEL, Sanjeev AGGARWAL, Thomas ANDRE, Sarin A. DESHPANDE
Filed: 28 Dec 20
Utility
Method of Fabricating a Magnetoresistive Bit from a Magnetoresistive Stack
22 Apr 21
A method of fabricating a magnetoresistive bit from a magnetoresistive stack includes (a) etching through at least a portion of a thickness of the surface region to create a first set of exposed areas in the form of multiple strips extending in a first direction, and (b) etching through at least a portion of a thickness of the surface region to create a second set of exposed areas in the form of multiple strips extending in a second direction.
Kerry Joseph NAGEL, Sanjeev AGGARWAL, Sarin A. DESHPANDE
Filed: 2 Dec 20
Utility
Magnetoresistive stacks and methods therefor
6 Apr 21
A magnetoresistive device may include multiple magnetic tunnel junction (MTJ) stacks separated from each other by one or more dielectric material layers and electrically conductive vias extending through the one more dielectric material layers.
Sanjeev Aggarwal, Kevin Conley, Sarin A. Deshpande
Filed: 11 Jan 19
Utility
Magnetoresistive Devices and Methods of Fabricating Such Devices
18 Mar 21
An integrated circuit (IC) device includes a logic portion including logic circuits in multiple vertically stacked metal layers interconnected by one or more via layers, and a memory portion with a plurality of magnetoresistive devices.
Sanjeev AGGARWAL, Kerry Joseph NAGEL
Filed: 17 Sep 19
Utility
Apparatus and methods for integrating magnetoresistive devices
16 Mar 21
An integrated circuit device includes a memory portion and a logic portion.
Kerry Joseph Nagel, Sanjeev Aggarwal, Sarin A. Deshpande
Filed: 8 Nov 18
Utility
Magnetic memory using spin-orbit torque
2 Mar 21
Spin-orbit-torque (SOT) segments are provided along the sides of free layers in magnetoresistive devices that include magnetic tunnel junctions.
Han-Jong Chia
Filed: 2 Mar 20
Utility
Bipolar chopping for 1/f noise and offset reduction in magnetic field sensors
23 Feb 21
A chopping technique, and associated structure, is implemented to cancel the magnetic 1/f noise contribution in a Tunneling Magnetoresistance (TMR) field sensor.
Bradley Neal Engel, Phillip G. Mather
Filed: 20 Mar 19
Utility
Determining bias configuration for write operations in memory to improve device performance during normal operation as well as to improve the effectiveness of testing routines
16 Feb 21
Techniques and circuits for testing and configuring bias voltage or bias current for write operations in memory devices are presented.
Jason Janesky, Syed M. Alam, Dimitri Houssameddine, Mark Deherrera
Filed: 19 Mar 19
Utility
Magnetoresistive stack with seed region and method of manufacturing the same
2 Feb 21
A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s).
Jijun Sun, Sanjeev Aggarwal, Han-Jong Chia, Jon M. Slaughter, Renu Whig
Filed: 8 May 20
Utility
Magnetoresistive stacks with an unpinned, fixed synthetic anti-ferromagnetic structure and methods of manufacturing thereof
19 Jan 21
A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region.
Srinivas V. Pietambaram, Bengt J. Akerman, Renu Whig, Jason A. Janesky, Nicholas D. Rizzo, Jon M. Slaughter
Filed: 2 Jun 20
Utility
Method of fabricating a magnetoresistive bit from a magnetoresistive stack
4 Jan 21
A method of fabricating a magnetoresistive bit from a magnetoresistive stack includes (a) etching through at least a portion of a thickness of the surface region to create a first set of exposed areas in the form of multiple strips extending in a first direction, and (b) etching through at least a portion of a thickness of the surface region to create a second set of exposed areas in the form of multiple strips extending in a second direction.
Kerry Joseph Nagel, Sanjeev Aggarwal, Sarin A. Deshpande
Filed: 21 May 20
Utility
Magnetoresistive devices and methods therefor
4 Jan 21
A method of manufacturing a magnetoresistive device may include forming a first ferromagnetic region, forming an intermediate region on or above the first ferromagnetic region.
Jijun Sun
Filed: 9 Apr 19
Utility
Magnetic Field Sensor with Increased SNR
30 Dec 20
Various means for improvement in signal-to-noise ratio (SNR) for a magnetic field sensor are disclosed for low power and high resolution magnetic sensing.
Phillip G. MATHER, Anuraag MOHAN
Filed: 15 Sep 20
Utility
Method and apparatus for generating dynamic security module
14 Dec 20
Disclosed herein are a method and apparatus for generating a dynamic security module which is allocated to a user terminal so that code configured to be executed on the user terminal for security varies with execution time.
Young Bin Ha
Filed: 11 Sep 17
Utility
Dynamic security module terminal device and method of operating same
14 Dec 20
Disclosed herein are a dynamic security module terminal device for receiving a dynamic security module and transmitting a security management event to a security server, and a method of operating the dynamic security module terminal device.
Young Bin Ha
Filed: 11 Sep 17
Utility
Dynamic security module server device and method of operating same
14 Dec 20
Disclosed herein are a dynamic security module server device for transmitting a dynamic security module to a user terminal and receiving a security management event from the user terminal, and a method of operating the dynamic security module server device.
Young Bin Ha
Filed: 11 Sep 17
Utility
Method of Manufacturing Integrated Circuit Using Encapsulation During an Etch Process
25 Nov 20
A method of fabricating a magnetoresistive bit from a magnetoresistive stack includes etching through a first portion of the magnetoresistive stack using a first etch process to form one or more sidewalls.
Sanjeev AGGARWAL, Sarin A. DESHPANDE, Kerry Joseph NAGEL
Filed: 9 Aug 20
Utility
Magnetoresistive device and method of manufacturing same
23 Nov 20
A magnetoresistive-based device and method of manufacturing a magnetoresistive-based device using one or more hard masks.
Sarin A. Deshpande, Sanjeev Aggarwal, Kerry Joseph Nagel
Filed: 10 Jul 19