166 patents
Page 3 of 9
Utility
Systems and methods for implementing and managing persistent memory
6 Sep 22
The present disclosure is drawn to, among other things, a method of managing a memory device.
Pankaj Bishnoi, Trevor Sydney Smith, James MacDonald
Filed: 30 May 18
Utility
Bipolar Chopping for 1/F Noise and Offset Reduction In Magnetic Field Sensors
18 Aug 22
A chopping technique, and associated structure, is implemented to cancel the magnetic 1/f noise contribution in a Tunneling Magnetoresistance (TMR) field sensor.
Bradley Neal ENGEL, Phillip G. MATHER
Filed: 3 May 22
Utility
Magnetic Memory Using Spin-orbit Torque
11 Aug 22
Spin-orbit-torque (SOT) segments are provided along the sides of free layers in magnetoresistive devices that include magnetic tunnel junctions.
Han-Jong CHIA
Filed: 18 Apr 22
Utility
Magnetoresistive Devices and Methods of Fabricating Magnetoresistive Devices
30 Jun 22
A method of manufacturing a magnetoresistive device may comprise forming a first magnetic region, an intermediate region, and a second magnetic region of a magnetoresistive stack above a via; removing at least a portion of the second magnetic region using a first etch; removing at least a portion of the intermediate region and at least a portion of the first magnetic region using a second etch; removing at least a portion of material redeposited on the magnetoresistive stack using a third etch; and rendering at least a portion of the redeposited material remaining on the magnetoresistive stack electrically non-conductive.
Sanjeev AGGARWAL, SHIMON, Kerry Joseph NAGEL
Filed: 28 Dec 20
Utility
Midpoint Sensing Reference Generation for Stt-mram
9 Jun 22
The present disclosure is drawn to a magnetoresistive device including an array of memory cells arranged in rows and columns, each memory cell comprising a magnetic tunnel junction, each row comprising a word line, and each column comprising a bit line; a column select device that selects a bit line.
Syed M. ALAM, Yaojun ZHANG, Frederick NEUMEYER
Filed: 7 Dec 20
Utility
Bipolar chopping for 1/f noise and offset reduction in magnetic field sensors
7 Jun 22
A chopping technique, and associated structure, is implemented to cancel the magnetic 1/f noise contribution in a Tunneling Magnetoresistance (TMR) field sensor.
Bradley Neal Engel, Phillip G. Mather
Filed: 12 Jan 21
Utility
Magnetic memory using spin-orbit torque
24 May 22
Spin-orbit-torque (SOT) segments are provided along the sides of free layers in magnetoresistive devices that include magnetic tunnel junctions.
Han-Jong Chia
Filed: 2 Feb 21
Utility
Methods of forming magnetoresistive devices and integrated circuits
17 May 22
Magnetoresistive device architectures and methods for manufacturing are presented that facilitate integration of process steps associated with forming such devices into standard process flows used for surrounding logic/circuitry.
Kerry Joseph Nagel, Sanjeev Aggarwal, Thomas Andre, Sarin A. Deshpande
Filed: 22 May 20
Utility
Magnetoresistive Devices and Methods of Fabricating Such Devices
12 May 22
An integrated circuit (IC) device includes a logic portion including logic circuits in multiple vertically stacked metal layers interconnected by one or more via layers, and a memory portion with a plurality of magnetoresistive devices.
Sanjeev AGGARWAL, Kerry Joseph NAGEL
Filed: 23 Nov 21
Utility
Systems and Methods for Monitoring and Managing Memory Devices
5 May 22
The present disclosure is drawn to, among other things, a method of managing a memory device.
Syed M. ALAM, Jason JANESKY, Han Kyu LEE, Hamid ALMASI, Pedro SANCHEZ, Cristian P. MASGRAS, Iftekhar RAHMAN, Sumio IKEGAWA, Sanjeev AGGARWAL, Dimitri HOUSSAMEDDINE, Frederick Charles NEUMEYER
Filed: 27 Oct 21
Utility
Magnetoresistive devices and methods therefor
1 Mar 22
A magnetoresistive device may include one or more electrodes or electrically conductive lines and a fixed region and a free region disposed between the electrodes or electrically conductive lines.
Sumio Ikegawa, Hamid Almasi, Shimon, Kerry Nagel, Han Kyu Lee
Filed: 6 Feb 20
Utility
Magnetoresistive Stack/structure and Methods Therefor
24 Feb 22
A magnetoresistive device comprises a fixed magnetic region positioned on or over a first electrically conductive region, an intermediate layer positioned on or over the fixed magnetic region, a free magnetic region positioned on or over the intermediate layer, and a metal insertion substance positioned in contact with the free magnetic region, wherein the metal insertion substance includes one or more transition metal elements.
Sumio IKEGAWA
Filed: 8 Nov 21
Utility
Magnetoresistive Stack/structure and Method of Manufacturing Same
10 Feb 22
A method of manufacturing a magnetoresistive stack/structure comprising (a) etching through a second magnetic region to (i) provide sidewalls of the second magnetic region and (ii) expose a surface of a dielectric layer, (b) depositing a first encapsulation layer on the sidewalls of the second magnetic region and over a surface of the dielectric layer, (c) thereafter: (i) etching the first encapsulation layer which is disposed over the dielectric layer using a first etch process, and (ii) etching re-deposited material using a second etch process, wherein, after such etching, a portion of the first encapsulation layer remains on the sidewalls of the second magnetic region, (d) etching (i) through the dielectric layer to form a tunnel barrier and provide sidewalls thereof and (ii) etching the first magnetic region to provide sidewalls thereof, and (e) depositing a second encapsulation layer on the sidewalls of the tunnel barrier and first magnetic region.
Sarin A. DESHPANDE, Kerry Joseph NAGEL, Chaitanya MUDIVARTHI, Sanjeev AGGARWAL
Filed: 26 Oct 21
Utility
Magnetoresistive Structure Having Two Dielectric Layers, and Method of Manufacturing Same
30 Dec 21
A magnetoresistive structure having two dielectric layers, and method of manufacturing same, includes a free magnetic layer positioned between the two dielectric layers.
Sanjeev AGGARWAL, Kerry NAGEL, Jason JANESKY
Filed: 8 Sep 21
Utility
Magnetoresistive devices and methods of fabricating such devices
28 Dec 21
An integrated circuit (IC) device includes a logic portion including logic circuits in multiple vertically stacked metal layers interconnected by one or more via layers, and a memory portion with a plurality of magnetoresistive devices.
Sanjeev Aggarwal, Kerry Joseph Nagel
Filed: 17 Sep 19
Utility
Magnetoresistive Devices and Methods Therefor
9 Dec 21
Aspects of the present disclosure are directed to magnetoresistive stacks including regions having increased height-to-diameter ratios.
Jijun SUN
Filed: 17 Oct 19
Utility
Stacked Magnetoresistive Structures and Methods Therefor
2 Dec 21
Aspects of the present disclosure are directed to magnetic tunnel junction (MTJ) structures comprising multiple MTJ bits connected in series.
Jijun SUN, Frederick MANCOFF, Jason JANESKY, Kevin CONLEY, Lu HUI, Sumio IKEGAWA
Filed: 27 Jun 19
Utility
Magnetoresistive stack/structure including metal insertion substance
30 Nov 21
A magnetoresistive device comprises a fixed magnetic region positioned on or over a first electrically conductive region, an intermediate layer positioned on or over the fixed magnetic region, a free magnetic region positioned on or over the intermediate layer, and a metal insertion substance positioned in contact with the free magnetic region, wherein the metal insertion substance includes one or more transition metal elements.
Sumio Ikegawa
Filed: 9 Jul 18
Utility
Magnetoresistive stack/structure and method of manufacturing same
30 Nov 21
A method of manufacturing a magnetoresistive stack/structure comprising (a) etching through a second magnetic region to (i) provide sidewalls of the second magnetic region and (ii) expose a surface of a dielectric layer, (b) depositing a first encapsulation layer on the sidewalls of the second magnetic region and over a surface of the dielectric layer. (c) thereafter: (i) etching the first encapsulation layer which is disposed over the dielectric layer using a first etch process, and (ii) etching re-deposited material using a second etch process, wherein, after such etching, a portion of the first encapsulation layer remains on the sidewalls of the second magnetic region, (d) etching (i) through the dielectric layer to form a tunnel barrier and provide sidewalls thereof and (ii) etching the first magnetic region to provide sidewalls thereof, and (e) depositing a second encapsulation layer on the sidewalls of the tunnel barrier and first magnetic region.
Sarin A. Deshpande, Kerry Joseph Nagel, Chaitanya Mudivarthi, Sanjeev Aggarwal
Filed: 10 Apr 20
Utility
Magnetoresistive Devices and Methods Therefor
18 Nov 21
A magnetoresistive stack includes a fixed magnetic region, one or more dielectric layers disposed on and in contact with the fixed magnetic region, and a free magnetic region disposed above the one or mom dielectric layers.
Jijun SUN, Han-Jong CHIA, Sarin DESHPANDE, Ahmet DEMIRAY
Filed: 29 Oct 19