1170 patents
Page 47 of 59
Utility
Environmental Protection for Wafer Level and Package Level Applications
13 May 20
A method includes the steps of fabricating one or more semiconductor devices on a semiconductor wafer and depositing one or more conformal organic environmental protection layers over the semiconductor wafer using a vapor deposition process.
Christo Bojkov, Andrew Ketterson, Robert Charles Dry
Filed: 14 Jan 20
Utility
Passive Magnetic Devices
13 May 20
A passive magnetic device (PMD) has a base electrode, a multi-port signal structure (MPSS), and a substrate therebetween.
Andrew Arthur Ketterson, Xing Gu, Yongjie Cui, Xing Chen
Filed: 14 Jan 20
Utility
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13 May 20
Integration of self-biased magnetic circulators with microwave devices is disclosed herein.
Yongjie Cui, Xing Gu, Andrew Arthur Ketterson, Cathy Lee, Xing Chen
Filed: 2 Jun 19
Utility
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13 May 20
Radio frequency (RF) amplifier circuitry for amplifying an RF input signal to provide an RF output signal includes target envelope supply voltage compensation circuitry, envelope tracking power supply circuitry, and power amplifier circuitry.
Nadim Khlat, Michael R. Kay
Filed: 24 Sep 19
Utility
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13 May 20
A radio frequency front-end (RFFE) bus hub circuit and related apparatus are provided.
Christopher Truong Ngo, Alexander Wayne Hietala
Filed: 22 Apr 19
Utility
89mjrz1by0yzzzd2wrefsl9kie4b907 mqam2kkg7
11 May 20
A method includes the steps of fabricating one or more semiconductor devices on a semiconductor wafer and depositing one or more conformal organic environmental protection layers over the semiconductor wafer using a vapor deposition process.
Christo Bojkov, Andrew Ketterson, Robert Charles Dry
Filed: 29 Oct 17
Utility
5bwlhdwohewhi6mfl2ywhxawft7jf8mognvzl62oac1wi2rzaj
11 May 20
The present disclosure relates to a microelectronics package with a self-aligned stacked-die assembly and a process for making the same.
Julio C. Costa, George Maxim
Filed: 4 Sep 17
Utility
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11 May 20
Spatial power-combining devices and antenna assemblies for spatial power-combining devices are disclosed.
Ankush Mohan
Filed: 15 May 18
Utility
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6 May 20
A radio frequency (RF) front-end circuit is provided.
Nadim Khlat
Filed: 4 Nov 18
Utility
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6 May 20
Radio frequency (RF) filtering devices, and particularly compensation structures for RF filtering devices are disclosed.
Manjunath Swamy
Filed: 10 Feb 19
Utility
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29 Apr 20
An envelope tracking system is disclosed having an envelope tracking integrated circuit (ETIC) with a first tracker having a first supply output and a second tracker having a second supply output, wherein the ETIC has a first mode in which only one of the first and second trackers supplies voltage and a second mode in which the first and second trackers both supply voltage.
Nadim Khlat, Michael R. Kay
Filed: 23 May 19
Utility
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29 Apr 20
An envelope tracking system having delay compensation circuitry is disclosed.
Nadim Khlat
Filed: 14 Mar 19
Utility
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29 Apr 20
A multimode envelope tracking (ET) circuit and related apparatus is provided.
Nadim Khlat, Michael R. Kay
Filed: 24 Feb 19
Utility
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29 Apr 20
An acoustic filter apparatus is provided.
Nadim Khlat
Filed: 29 Apr 19
Utility
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27 Apr 20
A low modulation bandwidth (LMB) envelope tracking (ET) circuit is provided.
Nadim Khlat, Manbir Singh Nag
Filed: 29 Jul 18
Utility
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27 Apr 20
An envelope tracking (ET) voltage tracker circuit and related power management circuit are provided.
Nadim Khlat, Michael R. Kay
Filed: 22 May 18
Utility
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27 Apr 20
A radio frequency (RF) multiplexer includes, for example, a common port, a first port for a first frequency band, a second port for a second frequency band, and a third port for a third frequency band.
Sam Mandegaran
Filed: 23 Oct 19
Utility
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27 Apr 20
A sequentially switched bulk acoustic wave (BAW) delay line circulator is disclosed herein.
Charles Forrest Campbell
Filed: 22 Oct 18
Utility
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27 Apr 20
The present disclosure relates to a packaging process to enhance thermal and electrical performance of a wafer-level package.
Julio C. Costa, Jan Edward Vandemeer, Jonathan Hale Hammond, Merrill Albert Hatcher, Jr., Jon Chadwick
Filed: 22 Oct 18
Utility
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27 Apr 20
A high electron mobility transistor (HEMT) device with epitaxial layers that include a gallium nitride (GaN) layer and an aluminum (Al) based layer having an interface with the GaN layer is disclosed.
Edward A. Beam, III, Jinqiao Xie
Filed: 20 Oct 16