849 patents
Page 16 of 43
Utility
Semiconductor device and data processing system
21 Sep 21
A technique is provided which can facilitate management of data in a memory device in a semiconductor device including the memory device and a data processing device.
Atsunori Hirobe
Filed: 8 Mar 18
Utility
Branch destination prediction based on accord or discord of previous load data from a data cache line corresponding to a load instruction and present load data
21 Sep 21
A processor device capable of raising a hit rate of branch destination prediction is provided.
Masanao Sasai
Filed: 8 Mar 18
Utility
Semiconductor device
21 Sep 21
The power control device reliably disconnects the current path of the failed output transistor.
Naohiro Yoshimura, Osamu Soma
Filed: 28 Aug 19
Utility
Memory protection circuit and memory protection method
14 Sep 21
To provide a memory protection circuit and a memory protection method suitable for quick data transfer between a plurality of virtual machines via a common memory, according to an embodiment, a memory protection circuit includes a first ID storing register that stores therein an ID of any of a plurality of virtual machines managed by a hypervisor, an access determination circuit that permits the virtual machine having the ID stored in the first ID storing register to access a memory, a second ID storing register that stores therein an ID of any of the virtual machines, and an ID update control circuit that permits the virtual machine having the ID stored in the second ID storing register to rewrite the ID stored in the first ID storing register.
Takashi Ichikawa
Filed: 7 May 19
Utility
Non-volatile memory read method for improving read margin
14 Sep 21
A semiconductor device capable of enlarging a read margin of a memory cell and a method of surrounding a read of a memory are provided.
Koichi Takeda
Filed: 24 Mar 20
Utility
Semiconductor device and manufacturing method thereof
7 Sep 21
A semiconductor device includes a first insulating layer, an optical waveguide, a first slab portion, a second insulating layer, and a conductive layer.
Yasutaka Nakashiba, Tohru Kawai
Filed: 14 Oct 19
Utility
Semiconductor device and method for protecting bus
7 Sep 21
The master interface generates copy data by copying the first data, and generates an error detection code based on the copy data.
Sho Yamanaka, Toshiyuki Hiraki
Filed: 27 Apr 20
Utility
Semiconductor device and method for manufacturing same
7 Sep 21
A terrace insulating film (SL) to be overridden by a gate electrode (G) of an nLDMOS device is configured by LOCOS, and a device isolation portion (SS) is configured by STI.
Makoto Koshimizu, Hideki Niwayama, Kazuyuki Umezu, Hiroki Soeda, Atsushi Tachigami, Takeshi Iijima
Filed: 11 Mar 20
Utility
Semiconductor device and semiconductor device system
7 Sep 21
The present invention provides both a margin of a discharge start voltage with respect to a power supply voltage and a margin of a clamp voltage with respect to a breakdown withstand voltage of an internal circuit.
Koki Narita
Filed: 16 Oct 19
Utility
Semiconductor device, motor drive system, and motor control program
7 Sep 21
The present disclosure starts up a three-phase motor in a stable manner.
Satoshi Narumi
Filed: 28 Feb 19
Utility
Semiconductor device, communication systems and method for controlling the communication system
7 Sep 21
A semiconductor device capable of improving the efficiencies of communication systems is provided.
Keiichiro Sano, Jean Noel Mouthe
Filed: 17 Dec 19
Utility
Image sensor with A/D conversion circuit having reduced DNL deterioration
7 Sep 21
The present invention provides a semiconductor device having an integration type A/D converter capable of speeding up.
Yoichi Iizuka, Fukashi Morishita
Filed: 30 Oct 19
Utility
Semiconductor device and its power supply control method
31 Aug 21
The semiconductor device includes a semiconductor chip including a first nonvolatile memory including a first memory block and a second memory block, CPU controlling the first nonvolatile memory, a first switch electrically connected to the first memory block and controlling the supply of the first power supply voltage to the first memory block, a second switch electrically connected to the second memory block and controlling the supply of the first power supply voltage to the second memory block, and a second nonvolatile memory electrically connected to each of the first switch and the second switch and storing flag information for controlling the first switch and the second switch, wherein the control of each of the first switch and the second switch is performed based on flag information indicating whether program data executed by CPU is written in the first memory block and the second memory block.
Kotaro Sakumura, Hiroshi Tachibana, Hideki Otsu
Filed: 3 Dec 19
Utility
Trench gate semiconductor device with dummy gate electrode and manufacturing method of the same
31 Aug 21
A semiconductor device including a field-effect transistor having source and drain source regions, first and second gate electrodes and a protective diode connected to the transistor.
Yoshito Nakazawa, Yuji Yatsuda
Filed: 11 Feb 19
Utility
Semiconductor device and bus generator
24 Aug 21
Even under various conditions, stay of request on a bus is eliminated, and memory efficiency can be improved.
Yuki Hayakawa, Toshiyuki Hiraki, Sho Yamanaka
Filed: 11 Jun 19
Utility
Video encoding device, operating methods thereof, and vehicles equipped with a video encoding device
24 Aug 21
A video encoding device includes a local decode generation unit for generating a reference image based on a result of encoding of a divided image, a compression unit for compressing the reference image to generate a compressed data, a reference image storage determination unit for determining whether to store the compressed data in a memory, and an inter-prediction unit for performing motion vector search for inter-coding based on a reference image stored in the memory.
Maiki Hosokawa, Toshiyuki Kaya, Tetsuya Shibayama, Seiji Mochizuki, Tomohiro Une, Kazushi Akie
Filed: 24 Oct 19
Utility
Semiconductor device and method of manufacturing the same
24 Aug 21
The semiconductor device includes a fin FA selectively protruded from an upper surface of a semiconductor substrate SB, a gate insulating film GF1 formed on an upper surface and a side surface of the fin FA and having an insulating film X1 and a charge storage layer CSL, and a memory gate electrode MG formed on the gate insulating film GF1.
Shibun Tsuda
Filed: 15 Apr 19
Utility
Semiconductor device and electronic device
24 Aug 21
The lower surface of the wiring substrate includes a first region overlapping with the semiconductor chip mounted on the upper surface, and a second region surrounding the first region and not overlapping with the semiconductor chip.
Yoshitaka Okayasu, Shuuichi Kariyazaki
Filed: 15 Oct 19
Utility
Semiconductor device, image processing system, image processing method and computer readable storage medium
17 Aug 21
A semiconductor device includes an image data acquisition circuit which acquires a plurality of first captured image data and a plurality of second captured image data at a first time and a second time, an adjustment region determination circuit which detects a target object from the plurality of first captured image data, and determines an adjustment region by estimating a position of the target object at the second time, a color adjustment circuit configured to determine a color adjustment gain based on the adjustment region, and perform color balance adjustment processing on the plurality of second captured image data based on the color adjustment gain, and an image synthesis circuit configured to synthesize the plurality of second captured image data so that overlapping regions included in a plurality of images of the plurality of second captured image data overlap each other.
Hirofumi Kawaguchi, Akihide Takahashi
Filed: 4 Nov 19
Utility
Semiconductor device including memory using hafnium and a method of manufacturing the same
17 Aug 21
A memory cell, which is a nonvolatile memory cell, includes a gate dielectric film having charge storage layer capable of holding charges, and a memory gate electrode formed on the gate dielectric film.
Masao Inoue, Masaru Kadoshima, Yoshiyuki Kawashima, Ichiro Yamakawa
Filed: 25 Jun 19