725 patents
Utility
Semiconductor Device and Method of Manufacturing the Same
18 Jan 24
A semiconductor device with improved reliability is provided.
Kazuo TOMITA, Hiroki TAKEWAKA
Filed: 29 Sep 23
Utility
Semiconductor Device
18 Jan 24
A semiconductor device includes a crystal oscillator circuit, a first noise application circuit, and a second noise application circuit.
Soshiro NISHIOKA
Filed: 28 Jun 23
Utility
Semiconductor Device and Bump Arrangement Method
18 Jan 24
Kazuo SAKAMOTO
Filed: 13 Jul 22
Utility
Visual Inspection Apparatus and Visual Inspection Methods
11 Jan 24
A visual inspection apparatus includes a stage on which a FCBGA type semiconductor package having a lid is placed, a camera located above the stage, a coaxial illumination device located between the camera and the stage, an oblique illumination device located between the camera and the stage, and a control device.
Hiroshi YAMASHITA, Masahiro IBE, Kojiro TANIMURA
Filed: 3 May 23
Utility
Semiconductor Device
11 Jan 24
A semiconductor device according to an embodiment includes a level detection unit that validates a level detection signal LD when a value indicated by stream data exceeds a threshold condition value, a ring buffer that cyclically stores internal data generated from the stream data in a storage area that is set within a predetermined address range, a data processing unit that operates with a bus clock and performs data processing using the internal data acquired from the ring buffer, and an address adjustment unit that adjusts a read address indicating a read start position of the ring buffer to a position that becomes a predetermined difference from a write address of the ring buffer at that time in accordance with a start of generation of the bus clock, and generates a bus clock during a period in which the level detection signal LD is valid.
Motoshige IKEDA
Filed: 15 May 23
Utility
Semiconductor Device and Method of Manufacturing the Same
11 Jan 24
A semiconductor device having a semiconductor substrate, a BOX film on the semiconductor substrate, a semiconductor layer on the BOX film, a first trench penetrated through the semiconductor layer and reached to the first insulating film, a first insulating film covering a side surface of the first trench and in contact with an upper surface of the BOX film at a bottom of the first trench, a second trench formed at the bottom of the first trench such that the second trench penetrates through the first insulating film and reached in the BOX film, a second insulating film filled in the first trench and the second trench.
Hiroyuki ARIE, Takayuki IGARASHI
Filed: 17 May 23
Utility
Method of Manufacturing Semiconductor Device and Semiconductor Device
4 Jan 24
A source pad electrically coupled with a source of a MOSFET of a semiconductor chip and located at a position below a lead in cross-sectional view is electrically connected with the lead for source via a conductive member bonded to the source pad and a wire bonded to the conductive member.
Noriko NUMATA, Koichi HASEGAWA, Tatsuaki TSUKUDA
Filed: 26 Apr 23
Utility
Semiconductor Device and Method of Manufacturing the Same
4 Jan 24
A semiconductor device includes a chip mounting portion and a semiconductor chip provided on the chip mounting portion via a conductive adhesive material.
Yasutaka NAKASHIBA, Toshiyuki HATA, Hiroshi YANAGIGAWA, Tomohisa SEKIGUCHI
Filed: 7 Jun 23
Utility
Semiconductor Device and Method of Manufacturing the Same
4 Jan 24
A semiconductor device includes a first metal film forming an uppermost layer wiring that has a bonding pad.
Shota OKABE, Nozomi ITO, Yuji TAKAHASHI
Filed: 27 Mar 23
Utility
Semiconductor Device
4 Jan 24
The semiconductor device has the main surface, the semiconductor substrate having the first impurity region formed on the main surface, the first electrode formed on the main surface having the first impurity region, the insulating film formed on the main surface such that surround the first electrode, the second electrode formed on the insulating film such that spaced apart from the first electrode and annularly surround the first electrode, and the semi-insulating film.
Kodai OZAWA, Sho NAKANISHI
Filed: 19 Sep 23
Utility
Cryptographic Key Installation Method
4 Jan 24
A cryptographic key installation method of installing a customer key in a semiconductor device, wherein the semiconductor device includes a decryption functional unit that has a secret key installed therein in advance, and when the customer key encrypted by a public key corresponding to the secret key is installed, decrypts the encrypted customer key by the secret key installed in advance to generate a customer key, wherein an encryption device on a user side that uses the semiconductor device encrypts the customer key by the public key, and generates the encrypted customer key, and wherein a key installation device on the user side installs the encrypted customer key in the semiconductor device.
Takashi KITAGAWA
Filed: 26 May 23
Utility
Cryptosystem and Cryptographic Service Methods
4 Jan 24
A semiconductor manufacturer generates a manufacturer encryption key and a manufacturer decryption key corresponding to the manufacturer decryption key, installs the manufacturer decryption key in a semiconductor device, and provides a customer with the manufacturer decryption key, the customer generates a customer encryption key and a customer decryption key corresponding to the customer decryption key, decrypts, by the customer decryption key, a customer key to be installed in the semiconductor device, and supplies the encrypted customer key to the semiconductor manufacturer, the semiconductor manufacturer encrypts the supplied customer key by the manufacturer encryption key without decryption, and supplies the encrypted customer key to the customer, the customer decrypts the customer key by the customer decryption key, and installs the decrypted customer key in the semiconductor device, and in the semiconductor device, the installed customer key is decrypted by the manufacturer decryption key installed by the semiconductor manufacturer.
Takashi KITAGAWA
Filed: 18 May 23
Utility
Semiconductor Device and Method of Manufacturing the Same
28 Dec 23
A semiconductor device includes a trench emitter electrode located at a boundary between one end of an active cell region and an inactive cell region, a trench gate electrode located at a boundary between the other end of the active cell region and the inactive cell region, an end trench gate electrode connected to one end of the trench gate electrode, and an end trench emitter electrode connected to one end of the trench emitter electrode.
Seigo NAMIOKA, Hitoshi MATSUURA, Ryota KURODA
Filed: 7 Mar 23
Utility
Semiconductor Device and Method of Manufacturing the Same
28 Dec 23
An improved power MOSFET of a split gate structure including a gate electrode and a field plate electrode in a trench is disclosed.
Yuya ABIKO, Takahiro MARUYAMA
Filed: 7 Mar 23
Utility
Semiconductor Device
21 Dec 23
A first P-type transistor and a second P-type transistor are connected in series between a power supply terminal and an output terminal.
Koji TAKAYANAGI
Filed: 8 Jun 23
Utility
Manufacturing Method of Semiconductor Device, Method of Testing the Semiconductor Device and Wafer Holding Member
21 Dec 23
A method of manufacturing a semiconductor device includes: a grind step of forming a small thickness portion and a large thickness portion surrounding the small thickness portion in plan view by grinding a back surface of a semiconductor wafer; a preparation step of preparing a wafer holding member including a wafer placement surface and a back surface opposite to the wafer placement surface and having a larger thickness than a difference between a thickness of the large thickness portion and a thickness of the small thickness portion; and a placement step of placing the semiconductor wafer on the wafer holding member so that the small thickness portion of the semiconductor wafer and the wafer placement surface of the wafer holding member are in contact with each other on the back surface side of the semiconductor wafer.
Tsuyoshi KANAO, Koji OGATA
Filed: 28 Mar 23
Utility
Semiconductor Device and Method of Manufacturing the Same
21 Dec 23
Wirings next to each other spaced apart by a first distance are formed in the uppermost layer of a multilayer wiring layer formed on a semiconductor substrate.
Tatsuya USAMI
Filed: 21 Apr 23
Utility
Metal Film and Manufacturing Method of the Metal Film, and Semiconductor Device and Method of Manufacturing the Semiconductor Device
21 Dec 23
A metal film, a manufacturing method of the metal film, semiconductor device, and a manufacturing method of semiconductor device are provided with high crack resistance (higher hardness) during wire bonding.
Tadashi YAMAGUCHI
Filed: 20 Apr 23
Utility
Semiconductor Device and Method of Manufacturing the Same
21 Dec 23
A dielectric layer has a first opening exposing a surface of a first conductive layer and a second opening exposing a surface of a second conductive layer and having an opening area smaller than an opening area of the first opening.
Etsuko WATANABE, Takashi TONEGAWA
Filed: 23 Mar 23
Utility
Semiconductor Device Including a Circuit for Transmitting a Signal
21 Dec 23
Reliability of a semiconductor device is improved.
Toshihiko AKIBA, Kenji SAKATA, Nobuhiro KINOSHITA, Yosuke KATSURA
Filed: 6 Sep 23