725 patents
Page 4 of 37
Utility
Semiconductor Device
26 Oct 23
A semiconductor device includes first and second interlayer insulating films, first and second wirings, and a resistor film.
Nobuhito SHIRAISHI, Naohito SUZUMURA
Filed: 27 Feb 23
Utility
Device and Method of Secure Decryption by Virtualization and Translation of Physical Encryption Keys
19 Oct 23
Example implementations include a system of secure decryption by virtualization and translation of physical encryption keys, the system having a key translation memory operable to store at least one physical mapping address corresponding to at least one virtual key address, a physical key memory operable to store at least one physical encryption key at a physical memory address thereof; and a key security engine operable generate at least one key address translation index, obtain, from the key translation memory, the physical mapping address based on the key address translation index and the virtual key address, and retrieve, from the physical key memory, the physical encryption key stored at the physical memory address.
Ahmad NASSER, Eric WINDER
Filed: 16 Jun 23
Utility
Semiconductor Device
19 Oct 23
A semiconductor device having an electrically writable or erasable non-volatile memory and a control circuit for executing mode control of a write operation and an erase operation of the non-volatile memory, in which the non-volatile memory has a rewrite suspension/recovery control circuit: responding to a suspension request signal from the control unit that requests a suspension of a rewrite operation; responding to an operation for suspending an application of a write voltage or an erase voltage and a recovery request signal from the control unit that requests a recovery from the suspension of the rewrite operation; controlling an operation for recovery from the suspension of the voltage application; and outputting a rewrite interruption/return control circuit that outputs to the control circuit a voltage application stop flag at a voltage application stop of the write voltage or erase voltage, and a rewrite information holding circuit that holds write position information for identifying a selection line to which a write voltage is applied at a response time of a suspension request signal.
Hirofumi HEBISHIMA
Filed: 12 Apr 23
Utility
Electronic Device and Semiconductor Device
19 Oct 23
The wiring board has a first region overlapping a first semiconductor device and a second region not overlapping each of the first semiconductor device and a second semiconductor device.
Shuuichi KARIYAZAKI, Ryuichi OIKAWA
Filed: 14 Apr 22
Utility
Designing Method and Semiconductor Device
19 Oct 23
The designing method according to an embodiment of the present invention is a method of designing a transmission line portion coupled between a transmission unit and a receiving unit, and transmitting a signal from the transmission unit to the receiving unit.
Ryuichi OIKAWA
Filed: 14 Apr 22
Utility
Semiconductor Device
19 Oct 23
A semiconductor device includes first and second active cell regions and an inactive cell region between the first and second active cell regions, wherein each of the first and second active cell regions comprises: a trench gate; a first trench emitter; a first hole barrier layer of a first conductivity type formed between the trench gate and the first trench emitter; a base layer of a second conductivity type formed on upper portion of the first hole barrier layer; an emitter layer of the first conductivity type formed on upper portion of the base layer; a latch-up prevention layer of the second conductivity type formed on upper portion of the first hole barrier layer, wherein the inactive cell region comprises: a second trench emitter; a first floating layer of the second conductivity type formed between the trench gate of the first active cell region and the second trench emitter.
Nao NAGATA
Filed: 14 Apr 22
Utility
Semiconductor Device and Method of Manufacturing the Same
19 Oct 23
A source diffusion layer and a base diffusion layer are formed in regions of a semiconductor substrate located between a trench gate electrode and a trench emitter electrode that are spaced apart from each other.
Kouichi KONISHI
Filed: 10 Jan 23
Utility
Semiconductor Device
19 Oct 23
An inductor to which a first potential is applied is surrounded by a first wiring connected with the inductor, and a pad connected with a second wiring, to which a second potential different from the first potential is applied, is disposed outside the second wiring such that the first wiring is surrounded by the second wiring.
Yasutaka NAKASHIBA, Takayuki IGARASHI
Filed: 27 Feb 23
Utility
Semiconductor Device
19 Oct 23
A semiconductor device includes a semiconductor substrate, a first source region and a first drain region each formed from an upper surface of the semiconductor substrate, a first gate electrode formed on the semiconductor substrate between the first source region and the first drain region via a first gate dielectric film, a first trench formed in the upper surface of the semiconductor substrate between the first gate dielectric film and the first drain region in a gate length direction, a second trench formed in the upper surface of the semiconductor substrate between the gate dielectric film and the first drain region in the gate length direction, the second trench being shallower than the first trench, and a first dielectric film embedded in the first trench and the second trench.
Katsumi EIKYU, Atsushi SAKAI, Yotaro GOTO
Filed: 18 Apr 22
Utility
Systems Including Bounding Box Checker for Object Detection Marking
12 Oct 23
Systems and methods for evaluating a set of bounding boxes in a blended image are described.
Shijia GUO, Stefan GELDREICH
Filed: 12 Apr 22
Utility
Semiconductor Device
12 Oct 23
A sense MOSFET is formed at a position surrounded by a main MOSFET and a source pad connected to a source region of the main MOSFET in plan view.
Hiroya SHIMOYAMA
Filed: 16 Feb 23
Utility
Semiconductor Device and Input Signal Controlling Method
12 Oct 23
To reduce the deterioration of the input circuit hysteresis characteristics even when the input noise occurs.
Wataru ISHIJIMA
Filed: 11 Apr 22
Utility
Semiconductor Device
5 Oct 23
A semiconductor device includes a first transistor that flows a load current to an external load; a current generation circuit that outputs a current corresponding to a power consumption generated in an overheat detection target when the load current flows the overheat detection target; a resistor-capacitor-network comprising a resistor and a capacitor corresponding to a thermal resistance and a thermal capacitance of the overheat detection target, and having one end coupled to the current generation circuit; an overheat detection circuit coupled to a connection point of the current generation circuit and the resistor-capacitor-network; and a voltage source that sets a voltage of the connection point of the current generation circuit and the resistor-capacitor-network to a predetermined voltage.
Hiroki NAGATOMI, Makoto TANAKA
Filed: 30 Mar 22
Utility
Semiconductor Device
5 Oct 23
A semiconductor device includes a first data line, a second data line, and a memory cell connected to the first data line and the second data line.
Daiki KITAGATA, Shinji TANAKA
Filed: 15 Feb 23
Utility
Data Transfer Device and Data Transfer Method
21 Sep 23
A data transfer device that divides and transfers the transfer target data in a burst manner from a transmission-side device to a reception-side device includes a storage device and a control device that controls the storage device to store one piece of the input transfer target data, controls the storage device so that data transfer is performed at a set burst length as a data length of divided data when the one piece of the data is divided by a division number until a last part of the data is sensed, and when the last part of the data is sensed, controls the storage device to adjust the burst length so that a data length of the data coincides with a total of data lengths of data to be transferred, and to transfer the data at the adjusted burst length.
Motoshige IKEDA, Yuuji INAE
Filed: 2 Feb 23
Utility
Method of Manufacturing Semiconductor Device
21 Sep 23
After a plurality of trenches is formed in an SOI substrate, a side surface of the insulating layer is retreated from a side surface of the semiconductor layer and a side surface of the semiconductor substrate.
Shibun TSUDA
Filed: 17 Mar 22
Utility
Semiconductor Device and Method of Manufacturing the Same
21 Sep 23
Disclosed is a technique for improving performance of a semiconductor device having a trench gate type power MOSFET.
Yuto OMIZU, Yuya ABIKO
Filed: 5 Dec 22
Utility
Semiconductor Device
21 Sep 23
A semiconductor device is provided with an SOI substrate which includes a semiconductor substrate, a ferroelectric layer and a semiconductor layer, and has a first region in which a first MISFET is formed.
Eiji TSUKUDA, Tohru KAWAI, Atsushi AMO
Filed: 17 Mar 22
Utility
Semiconductor Device
21 Sep 23
A semiconductor device capable of preventing a sharp variation in current consumption in neural network processing is provided.
Kazuaki TERASHIMA, Atsushi NAKAMURA, Rajesh GHIMIRE
Filed: 10 Jan 23
Utility
Semiconductor Device
14 Sep 23
The semiconductor device 10 receives an input signal given from the signal generating unit provided externally by a plurality of receiving units, a receiving unit 12, 13 for generating a plurality of received signals from the received input signal, a plurality of received signals by comparing, an error determination unit 14 for outputting an error notification to the upper system in response to the error between the channels that occurs between the received signals becomes equal to or greater than the threshold value, the threshold count value is stored and a threshold count register 17, the error determination unit 14 waits for the departure of the error notification until the period specified by the threshold count value has elapsed.
Takuro NISHIKAWA
Filed: 5 Dec 22