725 patents
Page 5 of 37
Utility
Semiconductor Device and Method of Manufacturing the Same
14 Sep 23
A semiconductor substrate has a first surface, a second surface opposing the first surface, and a trench extending from the second surface toward the first surface.
Taro MORIYA
Filed: 13 Dec 22
Utility
Semiconductor Device
14 Sep 23
A performance of a semiconductor device including a main MOSFET and a sensing MOSFET having a double-gate structure including a gate electrode and a field plate electrode inside a trench is improved.
Seiji HIRABAYASHI, Yusuke OJIMA
Filed: 13 Dec 22
Utility
Semiconductor Device and Circuit Device
14 Sep 23
Performance of a semiconductor device is enhanced.
Kazuhisa MORI, Toshiyuki HATA
Filed: 29 Nov 22
Utility
Semiconductor Device
7 Sep 23
In the semiconductor device according to an embodiment, a memory cell is controlled such that, for the part whose output value can be fixed based on the value stored in the memory cell without performing the information processing, the operation processing is stopped so as to stop the charging and discharging to and from the data line, and for the part whose output value needs to be fixed by performing the information processing, the information processing accompanied by charging and discharging to and from the data line is appropriately performed.
Shinji TANAKA, Daiki KITAGATA
Filed: 15 Feb 23
Utility
Method of Manufacturing Semiconductor Device
7 Sep 23
On a semiconductor substrate having an SOI region and a bulk silicon region formed on its upper surface, epitaxial layers are formed in source and drain regions of a MOSFET formed in the SOI region, and no epitaxial layer is formed in source and drain regions of a MOSFET formed in the bulk silicon region.
Takaaki TSUNOMURA, Yoshiki YAMAMOTO, Masaaki SHINOHARA, Toshiaki IWAMATSU, Hidekazu ODA
Filed: 15 May 23
Utility
Semiconductor Device and Method of Manufacturing the Same
7 Sep 23
A semiconductor device includes an insulating layer(IFL) on a semiconductor substrate(SUB), a conductive film (PL) on the insulating layer(IFL), an interlayer insulating film(IL) covering the conductive film(PL), a contact hole(CH1) in the interlayer insulating film(IL), the conductive film(PL) and the insulating layer (IFL), and a plug(PG1) embedded in the contact hole(CH1).
Shotaro KUDO
Filed: 5 Dec 22
Utility
Semiconductor Device and Method of Manufacturing the Same
7 Sep 23
Semiconductor device includes a well region formed in an active region of a semiconductor substrate, a gate electrode formed on the well region via a gate dielectric film, and a source region and a drain region formed in the well region.
Hideki SUGIYAMA
Filed: 3 Mar 22
Utility
Semiconductor Device
31 Aug 23
A semiconductor device capable of suppressing formation of nodules on an upper surface of an electroless plating film will be provided.
Teruhiro KUWAJIMA
Filed: 23 Nov 22
Utility
Semiconductor Device and Circuit Device
31 Aug 23
A semiconductor device includes a first semiconductor chip including a first MOSFET of n-type and a first parasitic diode and a second semiconductor chip including a second MOSFET of n-type and a second parasitic diode.
Hiroshi YANAGIGAWA, Yasutaka NAKASHIBA, Toshiyuki HATA
Filed: 29 Nov 22
Utility
Semiconductor Device and Manufacturing Method of Semiconductor Device
31 Aug 23
An insulating film is formed on a main surface of a semiconductor substrate constituting a semiconductor device so as to cover a field plate portion, a metal pattern thicker than the field plate portion is formed on the insulating film, and a protective film is formed on the insulating film so as to cover the metal pattern.
Toshiaki IGARASHI, Sho NAKANISHI, Tomoaki UNO, Koshiro YANAI, Masanari MURAYAMA
Filed: 7 Dec 22
Utility
Semiconductor Device and Method of Manufacturing the Same
31 Aug 23
To improve a reliability of a nonvolatile memory cell including a ferroelectric film.
Yoshiyuki KAWASHIMA
Filed: 29 Nov 22
Utility
Semiconductor Device and Impedance-matching Circuitry
17 Aug 23
A semiconductor device includes: a first terminal connected to an antenna; a second terminal connected to an input terminal of a receiving circuitry; a third terminal connected to an output terminal of a transmitting circuitry; a first inductor arranged in a signal path extending from the first terminal to the second terminal; and a second inductor arranged in a signal path extending from the first terminal to the third terminal, and the first inductor and the second inductor are formed so as to have at least a partial overlapping portion in plan view.
Kyoya Takegawa, Kenichi Shibata, Hiroaki Matsui
Filed: 16 Feb 23
Utility
Semiconductor Device and Method of Manufacturing the Same
10 Aug 23
A semiconductor device includes: a semiconductor substrate; an insulating layer formed on the semiconductor substrate; an optical waveguide formed on the insulating layer, extending in a first direction in a plan view, and being made of silicon; and an interlayer insulating film formed on the insulating layer to cover the optical waveguide.
Yasutaka NAKASHIBA, Shinichi WATANUKI
Filed: 8 Feb 22
Utility
High-frequency Signal Processing Circuitry and Wireless Communication Device
10 Aug 23
A circuitry includes a first to fourth waveform synthesizers, each waveform synthesizer includes a first terminal and a second terminal to which input signals are input and a third terminal from which an output signal obtained by synthesizing the input signals is output.
Kenichi SHIBATA
Filed: 7 Feb 23
Utility
Semiconductor Device and Semiconductor System
10 Aug 23
A semiconductor device includes a memory array having a plurality of associative memory cells arranged in a matrix form for storing entries.
Shinji TANAKA, Yohei SAWADA, Masao MORIMOTO
Filed: 2 Feb 23
Utility
Semiconductor Device
10 Aug 23
A semiconductor device includes a first power semiconductor device, a first Nch MOSFET whose drain is coupled to a gate of the first power semiconductor device, a first gate resistor coupled to a source of the first Nch MOSFET and a first diode coupled between the source and drain of the first Nch MOSFET.
Yusuke OJIMA
Filed: 10 Feb 22
Utility
Semiconductor Device and Manufacturing Method of the Same
10 Aug 23
Occurrence of short-channel characteristics and parasitic capacitance of a MOSFET on a SOI substrate is prevented.
Yoshiki YAMAMOTO, Hideki MAKIYAMA, Toshiaki IWAMATSU, Takaaki TSUNOMURA
Filed: 17 Apr 23
Utility
Semiconductor Device and Control Method Thereof
10 Aug 23
A semiconductor device and a control method thereof capable of satisfying both security requirements and functional safety requirements while suppressing an increase in the circuit scale.
Takahiko SUGAHARA
Filed: 28 Nov 22
Utility
Semiconductor Device and Manufacturing Method of Semiconductor Device
3 Aug 23
A semiconductor device includes an aluminum layer, a passivation film, and a protective film arranged between the aluminum layer and the passivation film.
Takashi AOKI, Takehiro UEDA
Filed: 21 Nov 22
Utility
Semiconductor Device and Circuit Device
3 Aug 23
A semiconductor device includes: a first semiconductor chip including a first MOSFET of n-type and a first parasitic diode; and a second semiconductor chip including a second MOSFET of n-type and a second parasitic diode.
Yasutaka NAKASHIBA, Hiroshi YANAGIGAWA, Kazuhisa MORI, Toshiyuki HATA
Filed: 29 Nov 22