725 patents
Page 3 of 37
Utility
Debug Apparatus and Recording Medium
23 Nov 23
A debug apparatus for performing allocation of target programs in which temperature is uniformized is provided.
Tomoyoshi UJII, Yuki MORI, Kazunori OCHIAI
Filed: 19 May 22
Utility
Manufacturing Method of Semiconductor Device
23 Nov 23
Increasing in a contact-resistance between a trench gate lead-out electrode and a gate lead-out contact member is suppressed.
Kouichi KONISHI
Filed: 2 Mar 23
Utility
Method of Manufacturing Semiconductor Device
23 Nov 23
To manufacture a semiconductor device, a first heat treatment for curing a first adhesive material of a conductive paste type is performed, after a semiconductor chip is mounted on a die pad of a lead frame via the first adhesive material.
Kosuke KITAICHI, Masatoshi SUGIURA, Hideaki TAMIMOTO, Takehiko MAEDA, Keita TAKADA, Yoshitaka KYOUGOKU
Filed: 28 Feb 23
Utility
Semiconductor Device and Method of Manufacturing the Same
23 Nov 23
A semiconductor device includes a first electrode and a second electrode configuring a MIM capacitor.
Takeshi NAKURA
Filed: 22 Mar 23
Utility
Semiconductor Device and Semiconductor System
23 Nov 23
A semiconductor device includes a receiving terminal for receiving a signal transmitted through a signal transmission line, a reference plane voltage terminal connected to a refence plane as a refence for the signal on the signal transmission line and a voltage generating circuit configured to generate a refence plane voltage to be supplied to the reference plane voltage terminal based on the signal received by the receiving terminal.
Yusuke AIHARA, Kuniyasu TAJIMA, Naoyuki HAMANISHI, Tadashi KAMEYAMA
Filed: 19 May 22
Utility
Semiconductor Device
16 Nov 23
A semiconductor device includes: a first semiconductor chip mounted on a chip mounting portion via a first bonding material; and a second semiconductor chip mounted on the first semiconductor chip.
Yasutaka NAKASHIBA, Toshiyuki HATA
Filed: 12 May 22
Utility
Semiconductor Device
16 Nov 23
A semiconductor device includes a semiconductor package having a differential signal terminal pair, and a wiring board.
Yoshikazu TANAKA, Tadashi KAMEYAMA, Takafumi BETSUI
Filed: 12 May 22
Utility
Semiconductor Device and Method of Manufacturing the Same
16 Nov 23
Semiconductor device has a cell region and a peripheral region, and has a drift layer, a trench, an gate dielectric film on an inner wall of the trench, a gate electrode, and a p-type first semiconductor region below the trench in the cell region on a semiconductor substrate.
Atsushi SAKAI, Katsumi EIKYU, Yasuhiro OKAMOTO, Kenichi HISADA, Nobuo MACHIDA
Filed: 25 Jul 23
Utility
Semiconductor Device and Method of Manufacturing the Same
16 Nov 23
A second gate electrode is adjacent, in a Y direction, to a first tip of a semiconductor layer in a first active region such that a protruding distance of a second tip of the second gate electrode protruded, in a X direction, from the semiconductor layer in the first active region is greater than or equal to 0.
Yoshiki YAMAMOTO
Filed: 20 Mar 23
Utility
Semiconductor Device
16 Nov 23
A semiconductor device includes: a die pad having an upper surface facing a semiconductor chip, a metal film formed on the upper surface, and a bonding material formed so as to cover the metal film.
Katsuhiko KITAGAWA, Takehiko MAEDA, Kuniharu MUTO, Takeshi MIYAKOSHI
Filed: 22 Feb 23
Utility
Semiconductor Device
16 Nov 23
A semiconductor device includes a first semiconductor chip, a second semiconductor chip, and a redistribution layer.
Yasutaka NAKASHIBA, Hiroshi MIYAKI
Filed: 9 Mar 23
Utility
Semiconductor Device
16 Nov 23
A package construction includes: a die pad, and a suspension lead remaining portion connected to the die pad.
Toshiyuki HATA
Filed: 16 Feb 23
Utility
Semiconductor Device and Power Management Ic
9 Nov 23
Semiconductor device has a regulator circuit having an even number of switching regulators that generate output power from an input power supply and a power management IC that controls the output potential generated by the switching regulator. semiconductor device is characterized in that a group of half of the even number of switching regulators is arranged on a first surface of semiconductor device system board, and a group of switching regulators, which is the remaining half, is arranged on a second surface that is in front-back relation with the first surface.
Takafumi BETSUI
Filed: 13 Jul 23
Utility
Semiconductor Device
2 Nov 23
A wiring substrate includes a first insulating layer, a first conductive layer, a second insulating layer, a second conductive layer, a third conductive layer, a third insulating layer, and a fourth conductive layer.
Takashi KARASHIMA
Filed: 17 Feb 23
Utility
Method of Manufacturing Semiconductor Device
2 Nov 23
In a frame member including a first region and a second region that are extending in a first direction in parallel to each other while being spaced apart from each other, first and second plating films are formed in the first and second regions, respectively.
Toshiyuki HATA
Filed: 17 Feb 23
Utility
Semiconductor Device and Method of Manufacturing the Semiconductor Device
2 Nov 23
A semiconductor device in which a resistance film and a MIM capacitor can be arranged within an interlayer insulating film without increasing the thickness of the interlayer insulating film is provided.
Eiji HIRAIWA
Filed: 1 Mar 23
Utility
Semiconductor Device and Method of Manufacturing the Same
2 Nov 23
A pad electrode is formed in an uppermost wiring layer of a multilayer wiring layer formed on a semiconductor substrate.
Takashi MORIYAMA
Filed: 2 Feb 23
Utility
Semiconductor Device
2 Nov 23
An improved power MOSFET having a super junction structure is disclosed.
Yuta NABUCHI, Akihiro SHIMOMURA
Filed: 10 Jan 23
Utility
Semiconductor Device and Method of Manufacturing the Same
26 Oct 23
A ferroelectric memory cell includes a paraelectric film formed on a semiconductor substrate and a ferroelectric layer formed on the paraelectric film.
Kazuyuki OMORI, Tadashi YAMAGUCHI
Filed: 7 Mar 23
Utility
Semiconductor Device
26 Oct 23
A semiconductor device includes a plurality of resistive films arranged on an interlayer dielectric film.
Nobuhito SHIRAISHI, Yasuo MORIMOTO, Yoshihiro FUNATO
Filed: 2 Feb 23