849 patents
Page 32 of 43
Utility
Semiconductor device
1 Jun 20
The semiconductor device 100 comprises a first semiconductor element 113 provided on a face on one side of a flat plate shaped interconnect component 101, an insulating resin 119 covering a face of a side where the first semiconductor element 113 of the interconnect component 101 is provided and a side face of the first semiconductor element 113, and a second semiconductor element 111 provided on a face on the other side of the interconnect component 101.
Yoichiro Kurita
Filed: 3 Apr 19
Utility
Semiconductor device and manufacturing method therefor
1 Jun 20
To enhance the performance of a semiconductor device.
Nao Nagata
Filed: 29 Oct 18
Utility
ylnts3z5vdyyf4xybxhs78q67ifm dipd68ahj35
1 Jun 20
The performances of a semiconductor device of a memory element are improved.
Masao Inoue
Filed: 9 Sep 18
Utility
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25 May 20
It is possible to prevent a central processing unit and a security processing unit from accessing of a non-volatile memory at the same time.
Shinsuke Asari, Kenichi Ito, Yuki Mori, Shigemasa Shiota
Filed: 29 Nov 17
Utility
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25 May 20
Related semiconductor devices have a problem in which analysis processing with high defect reproducibility cannot be performed.
Kenji Shiozawa, Yoshihide Nakamura, Takuya Lee, Yutaka Nakadai, Tetsuya Kokubun, Hiroyuki Sasaki
Filed: 1 May 18
Utility
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25 May 20
Yayumi Uehara
Filed: 1 Nov 17
Utility
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25 May 20
According to an embodiment, a word line driver includes: a first inverter that is driven by a first power supply voltage and inverts and outputs a decode signal; a second inverter that is driven by a second power supply voltage and inverts and outputs the decode signal; a first PMOS transistor that is controlled to be turned on or off on the basis of an output signal of the second inverter; a first NMOS transistor that is controlled to be turned on or off on the basis of an output signal of the first inverter; and a second PMOS transistor that is provided between a power supply voltage terminal to which the second power supply voltage is supplied and the gate of the first PMOS transistor and is temporarily turned on in synchronization with falling of the decode signal.
Koichi Takeda, Takashi Iwase
Filed: 2 Oct 18
Utility
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25 May 20
Performance of a semiconductor device is improved.
Kazuyuki Omori, Seiji Muranaka, Kazuyoshi Maekawa
Filed: 3 Oct 19
Utility
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18 May 20
A semiconductor device for controlling an apparatus includes a first memory that stores data indicating, in association with each other, a factor that occurs with respect to the apparatus and control contents of the apparatus to be performed with respect to the factor; a second memory, and a processor executing program instructions and configured to estimate the factor and a required time until encountering the factor based on a result of an observation of a periphery of the apparatus, and decide control contents of the apparatus based on the estimated factor and the data, to control the apparatus.
Yuki Kajiwara
Filed: 28 Nov 17
Utility
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18 May 20
According to one embodiment, a semiconductor device performs processing based on a user program by using a user program, which is used in a normal mode, as an analysis program and making a plurality of peripheral circuits having the same function operate in lock-step where the plurality of peripheral circuits operate in the identical manner, and makes failure diagnosis of the peripheral circuits by determining match or mismatch of a plurality of analysis information respectively obtained from the plurality of peripheral circuits operating in lock-step.
Takuya Lee, Tetsuya Kokubun, Yutaka Nakadai, Kenji Shiozawa, Yoshihide Nakamura
Filed: 2 May 18
Utility
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18 May 20
In an optical waveguide supplied with electricity by using a heater, miniaturization of the device is achieved by enhancing heat dissipation efficiency and heat resistance.
Tetsuya Iida, Yasutaka Nakashiba, Shinichi Kuwabara
Filed: 10 May 18
Utility
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18 May 20
A semiconductor storage device includes a plurality of memory cells arranged in a matrix, a word line provided corresponding to a memory cell row, a dummy word line formed in a metal interconnection layer adjacent to a metal interconnection layer in which the word line is formed, a word driver circuit configured to drive the word line, and a dummy word driver circuit configured to increase voltage on the word line based on interline capacitance between the word line and the dummy word line.
Yuichiro Ishii, Shinji Tanaka
Filed: 13 Nov 16
Utility
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18 May 20
To provide a semiconductor memory device capable of storing multi-value data while suppressing an increase in the threshold voltage set for a memory cell.
Hirokazu Nagase
Filed: 24 Aug 18
Utility
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18 May 20
In a semiconductor device (MISFET) having a gate electrode formed over a nitride semiconductor layer with a gate insulating film interposed therebetween, the gate insulating film includes a first gate insulating film (oxide film of first metal) formed on the nitride semiconductor layer and a second gate insulating film (oxide film of second metal).
Toshihiro Iizuka, Shin Koyama, Yoshitake Kato
Filed: 30 Apr 14
Utility
211n0kjogqdobpvcghwi7cjsnish9gzlcx58os0p1lxxx7el520rtwgrs4
18 May 20
The junction temperature of a field effect transistor is detected with a higher degree of accuracy than in the past.
Satoshi Narumi
Filed: 4 Jun 18
Utility
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18 May 20
Provided is a level shifter which can retain an operation margin and enhance an exceeded-breakdown-voltage preventing effect.
Yoji Kashihara
Filed: 14 Jan 19
Utility
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18 May 20
A semiconductor device that can perform voltage monitoring with a small circuit area is provided.
Masataka Minami
Filed: 9 Aug 18
Utility
lot4d8phqveksjixpnixh2gqrxspkztu9iqysukzmhro9t6v4nrukx5y
18 May 20
A video signal receiving apparatus receives a first and second video signals for transmitting a same video content.
Yuichi Takagi, Ren Imaoka
Filed: 12 May 19
Utility
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11 May 20
A battery voltage monitoring apparatus monitoring a voltage of an assembled battery, the assembled battery including a plurality of battery cells, comprising; a first voltage sensor module that monitors voltages of a plurality of battery cells arranged at a high voltage side; and a second voltage sensor module that monitors voltages of a plurality of battery cells arranged at a low voltage side, wherein the second voltage sensor module comprises a voltage sensor that is connected to a terminal and detects a voltage of a battery cell connected to the terminal, the terminal being supplied with a power source potential of the second voltage sensor module, the voltage sensor comprises a comparator including a first terminal and a second terminal, the first terminal being supplied with a voltage according to the voltage of the battery cell, the second terminal being supplied with a reference voltage.
Manabu Miyamoto
Filed: 14 Apr 16
Utility
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11 May 20
It is determined whether an arithmetic operation function of a device to be inspected is normal or not.
Seiichi Kousokabe
Filed: 19 Feb 18