604 patents
Utility
Selective deposition of etch-stop layer for enhanced patterning
9 Jan 24
Methods, systems, and computer programs are presented for selective deposition of etch-stop layers for enhanced patterning during semiconductor manufacturing.
Nagraj Shankar, Kapu Sirish Reddy, Jon Henri, Pengyi Zhang, Elham Mohimi, Bhavin Jariwala, Arpan Pravin Mahorowala
Filed: 29 Jul 21
Utility
Long-life extended temperature range embedded diode design for electrostatic chuck with multiplexed heaters array
9 Jan 24
A substrate support for a plasma chamber includes a base plate arranged along a plane, a first layer of an electrically insulating material arranged on the base plate along the plane, a plurality of heating elements arranged in the first layer along the plane, and a plurality of diodes arranged in respective cavities in the first layer.
Siyuan Tian
Filed: 4 Dec 19
Utility
Manifold valve for controlling multiple gases
2 Jan 24
Various embodiments include an apparatus to supply gases to a tool.
Damodar Rajaram Shanbhag, Nagraj Shankar
Filed: 26 Jul 22
Utility
Controlling plating electrolyte concentration on an electrochemical plating apparatus
2 Jan 24
Methods and electroplating systems for controlling plating electrolyte concentration on an electrochemical plating apparatus for substrates are disclosed.
Zhian He, Shantinath Ghongadi, Quan Ma, Hyungjun Hur, Cian Sweeney, Quang Nguyen, Rezaul Karim, Jingbin Feng
Filed: 27 Jun 22
Utility
MEMS-based Coriolis mass flow controller
2 Jan 24
A mass flow controller assembly includes a housing defining a cavity, a plurality of internal passages, a first inlet, a first outlet, a second inlet, and a second outlet.
Dennis Smith, Peter Reimer, Sudhakar Gopalakrishnan
Filed: 28 Mar 19
Utility
Line bending control for memory applications
2 Jan 24
A method for reducing bending of word lines in a memory cell includes a) providing a substrate including a plurality of word lines arranged adjacent to one another and above a plurality of transistors; b) depositing a layer of film on the plurality of word lines using a deposition process; c) after depositing the layer of film, measuring word line bending; d) comparing the word line bending to a predetermined range; e) based on the word line bending, adjusting at least one of nucleation delay and grain size of the deposition process; and f) repeating b) to e) one or more times using one or more substrates, respectively, until the word line bending is within the predetermined range.
Gorun Butail, Shruti Thombare, Ishtak Karim, Patrick Van Cleemput
Filed: 25 Nov 19
Utility
Mechanical suppression of parasitic plasma in substrate processing chamber
2 Jan 24
A system includes an electrode.
Douglas Keil, Edward J. Augustyniak, Karl Frederick Leeser, Mohamed Sabri
Filed: 31 Mar 23
Utility
Controlled degradation of a stimuli-responsive polymer film
2 Jan 24
Removing a stimuli responsive polymer (SRP) from a substrate includes controlled degradation.
Stephen M. Sirard, Gregory Blachut, Diane Hymes
Filed: 10 May 21
Utility
Multi-plate electrostatic chucks with ceramic baseplates
19 Dec 23
An electrostatic chuck for a substrate processing system is provided.
Feng Wang, Keith Gaff, Christopher Kimball
Filed: 23 Feb 18
Utility
Doped or undoped silicon carbide deposition and remote hydrogen plasma exposure for gapfill
19 Dec 23
A doped or undoped silicon carbide (SiCxOyNz) film can be deposited in one or more features of a substrate for gapfill.
Guangbi Yuan, Ieva Narkeviciute, Bo Gong, Bhadri N. Varadarajan
Filed: 10 Oct 19
Utility
Alternating etch and passivation process
19 Dec 23
Tin oxide films are used as spacers and hardmasks in semiconductor device manufacturing.
Seongjun Heo, Jengyi Yu, Chen-Wei Liang, Alan J. Jensen, Samantha S. H. Tan
Filed: 17 Nov 22
Utility
Removing metal contamination from surfaces of a processing chamber
12 Dec 23
A method for cleaning surfaces of a substrate processing chamber includes a) supplying a first gas selected from a group consisting of silicon tetrachloride (SiCl4), carbon tetrachloride (CCl4), a hydrocarbon (CxHy where x and y are integers) and molecular chlorine (Cl2), boron trichloride (BCl3), and thionyl chloride (SOCl2); b) striking plasma in the substrate processing chamber to etch the surfaces of the substrate processing chamber; c) extinguishing the plasma and evacuating the substrate processing chamber; d) supplying a second gas including fluorine species; e) striking plasma in the substrate processing chamber to etch the surfaces of the substrate processing chamber; and f) extinguishing the plasma and evacuating the substrate processing chamber.
Jengyi Yu, Samantha SiamHwa Tan, Seongjun Heo, Ge Yuan, Siva Krishnan Kanakasabapathy
Filed: 30 Dec 22
Utility
Wafer handling robot with radial gas curtain and/or interior volume control
5 Dec 23
A collar may be provided having an aperture through it through which the turret of a wafer handling robot may be extended or retracted.
Charles N. Ditmore, Richard M. Blank
Filed: 23 Feb 21
Utility
Depositing a carbon hardmask by high power pulsed low frequency RF
5 Dec 23
Methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate include pulsing a low frequency radio frequency component at a high power.
Matthew Scott Weimer, Pramod Subramonium, Ragesh Puthenkovilakam, Rujun Bai, David French
Filed: 28 May 20
Utility
Showerhead faceplate having flow apertures configured for hollow cathode discharge suppression
5 Dec 23
A faceplate of a showerhead has a bottom side that faces a plasma generation region and a top side that faces a plenum into which a process gas is supplied during operation of a substrate processing system.
Michael John Selep, Patrick G. Breiling, Karl Frederick Leeser, Timothy Scott Thomas, David William Kamp, Sean M. Donnelly
Filed: 29 Nov 22
Utility
High power cable for heated components in RF environment
5 Dec 23
A substrate support includes an edge ring, one or more heating elements, and a cable configured to provide power from a power source to the edge ring and the one or more heating elements.
Seyed Jafar Jafarian-Tehrani, Kenneth Walter Finnegan, Sean O'Brien, Benson Q. Tong
Filed: 25 Jun 18
Utility
Carrier ring designs for controlling deposition on wafer bevel/edge
5 Dec 23
Various carrier ring designs and configurations to control an amount of deposition at a wafer's front side and bevel edge are provided.
Michael J. Janicki, Brian Joseph Williams
Filed: 16 Dec 21
Utility
Systems and methods for pulse width modulated dose control
5 Dec 23
A substrate processing system for treating a substrate includes a manifold, a plurality of injector assemblies located in a processing chamber, and a dose controller.
Mariusch Gregor
Filed: 2 Jan 23
Utility
Protective coating for electrostatic chucks
5 Dec 23
An ElectroStatic Chuck (ESC) including a chucking surface having at least a portion covered with a coating of silicon oxide (SiO2), silicon nitride (Si3N4) or a combination of both.
Stephen Topping, Vincent Burkhart
Filed: 7 Jul 21
Utility
Determination of recipes for manufacturing semiconductor devices
5 Dec 23
Methods, systems, and computer programs are presented for determining the recipe for manufacturing a semiconductor with the use of machine learning (ML) to accelerate the definition of recipes.
Kapil Umesh Sawlani, Atashi Basu, David Michael Fried, Michal Danek, Emily Ann Alden
Filed: 22 Oct 20