540 patents
Page 3 of 27
Utility
Semiconductor devices having asymmetric integrated gate resistors for balanced turn-on/turn-off behavior
7 Nov 23
Power semiconductor devices comprise a gate pad, a plurality of gate fingers, and a first gate resistor and a first switch that are coupled between the gate pad and the gate fingers.
In-Hwan Ji, Jae-Hyung Park, Edward Van Brunt
Filed: 22 Jul 21
Utility
Transistor Including a Discontinuous Barrier Layer
2 Nov 23
A transistor includes a first passivation layer on a semiconductor layer of the transistor between a source contact and a drain contact.
Kyoung-Keun Lee, Jia Guo
Filed: 29 Apr 22
Utility
Electronic Device Packages with Internal Moisture Barriers
2 Nov 23
A method of packaging an RF transistor device includes attaching one or more electronic devices to a carrier substrate, applying an encapsulant over at least one of the one or more electronic devices, and providing a protective structure on the carrier substrate over the one or more electronic devices.
Arthur Pun, Basim Noori
Filed: 7 Jul 23
Utility
Power Module
19 Oct 23
The present disclosure describes a power module having a substrate, first and second pluralities of vertical power devices, and first and second terminal assemblies.
Brice McPherson, Brandon Passmore, Roberto M. Schupbach, Jennifer Stabach-Smith
Filed: 16 Jun 23
Utility
Superjunction power semiconductor devices formed via ion implantation channeling techniques and related methods
17 Oct 23
Semiconductor devices include a silicon carbide drift region having an upper portion and a lower portion.
Edward Robert Van Brunt, Alexander V. Suvorov, Vipindas Pala, Daniel J. Lichtenwalner, Qingchun Zhang
Filed: 9 Jul 21
Utility
Radio frequency transistor amplifiers having widened and/or asymmetric source/drain regions for improved on-resistance performance
17 Oct 23
A gallium nitride-based RF transistor amplifier comprises a semiconductor layer structure comprising a barrier layer on a channel layer, first and second source/drain regions in the semiconductor layer structure, first and second source/drain contacts on the respective first and second source/drain regions, and a longitudinally-extending gate finger that is between the first and second source/drain contacts.
Kyle Bothe, Jia Guo, Jeremy Fisher, Scott Sheppard
Filed: 8 Jan 21
Utility
Wide bandgap transistors with gate-source field plates
17 Oct 23
A transistor comprising an active region having a channel layer, with source and drain electrodes formed in contact with the active region and a gate formed between the source and drain electrodes and in contact with the active region.
Yifeng Wu, Primit Parikh, Umesh Mishra, Scott Sheppard
Filed: 11 Mar 05
Utility
Die Backside Metallization Methods and Apparatus
12 Oct 23
Die backside metallization methods and apparatus are disclosed.
Daniel Richter, Frank Stepniak
Filed: 11 Apr 22
Utility
Power Semiconductor Device with Shallow Conduction Region
12 Oct 23
A power transistor device includes a drift layer having a first conductivity type and a mesa on the drift layer.
Rahul R. Potera, Thomas E. Harrington, III, Edward Robert Van Brunt, Madankumar Sampath
Filed: 25 Mar 22
Utility
RF Amplifier Devices and Methods of Manufacturing Including Modularized Designs with Flip Chip Interconnections and Integration into Packaging
12 Oct 23
A transistor device package includes a component assembly comprising an interconnect structure, a transistor die having a front surface including gate, drain, and source terminal on a first surface of the interconnect structure, and one or more passive electrical components electrically coupled to the gate, drain, and/or source terminal by the interconnect structure.
Alexander Komposch, Eng Wah Woo, Basim Noori
Filed: 14 Jun 23
Utility
Systems and processes for increasing semiconductor device reliability
10 Oct 23
A system configured to increase a reliability of electrical connections in a device.
Sung Chul Joo, Jack Powell, Donald Farrell, Bradley Millon
Filed: 24 Mar 22
Utility
High output power density radio frequency transistor amplifiers in flat no-lead overmold packages
10 Oct 23
Packaged RF transistor amplifiers are provided that include a flat no-lead overmold package that includes a die pad, a plurality of terminal pads and an overmold encapsulation that at least partially covers the die pad and the terminal pads and an RF transistor amplifier die mounted on the die pad and at least partially covered by the overmold encapsulation.
Phil Saint-Erne, William Pribble, Warren Brakensiek, Bradley Millon
Filed: 26 Mar 21
Utility
Packaged Electronic Devices Having Transient Liquid Phase Solder Joints and Methods of Forming Same
5 Oct 23
A packaged electronic device comprises a power semiconductor die that includes a first terminal and a second terminal, a power substrate comprising a dielectric substrate having a first metal cladding layer on an upper surface thereof, an encapsulation covering the power semiconductor die and at least a portion of the power substrate, a first lead extending through the encapsulation that is electrically connected to the first terminal, and a second lead extending through the encapsulation that is electrically connected to the second terminal.
Sayan Seal
Filed: 29 Mar 22
Utility
Support Shield Structures for Trenched Semiconductor Devices
28 Sep 23
A power semiconductor device includes a semiconductor layer structure comprising a drift region of a first conductivity type, and a gate trench extending into the drift region.
Woongsun Kim, Daniel Jenner Lichtenwalner, Naeem Islam, Madankumar Sampath, Sei-Hyung Ryu
Filed: 24 Mar 22
Utility
Methods for pillar connection on frontside and passive device integration on backside of die
26 Sep 23
An integrated circuit device includes a radio frequency transistor amplifier die having a first surface, a second surface, a semiconductor layer structure that is between the first and second surfaces and includes a plurality of transistor cells adjacent the first surface, and terminals coupled to the transistor cells.
Terry Alcorn, Daniel Namishia, Fabian Radulescu
Filed: 1 Jun 20
Utility
Power transistor with soft recovery body diode
26 Sep 23
A transistor includes a substrate, a drift layer on the substrate, and a junction implant in the drift layer opposite the substrate.
Kijeong Han, Sei-Hyung Ryu, Daniel Jenner Lichtenwalner
Filed: 2 Dec 20
Utility
Gate trench power semiconductor devices having improved deep shield connection patterns
26 Sep 23
A power semiconductor device comprises a semiconductor layer structure comprising a drift region that comprises a wide band-gap semiconductor material and has a first conductivity type, a first gate structure and an adjacent second gate structure in an upper portion of the semiconductor layer structure, a deep shielding region in the drift region, and a connection region protruding upwardly from the deep shielding region and separating the first gate structure and the second gate structure from each other.
Thomas E. Harrington, III, Sei-Hyung Ryu
Filed: 10 Feb 21
Utility
Gate trench power semiconductor devices having improved deep shield connection patterns
19 Sep 23
A power semiconductor device includes a semiconductor layer structure comprising a drift region of a first conductivity type and a well region of a second conductivity type, a plurality of gate trenches including respective gate insulating layers and gate electrodes therein extending into the drift region, respective shielding patterns of the second conductivity type in respective portions of the drift region adjacent the gate trenches, and respective conduction enhancing regions of the first conductivity type in the respective portions of the drift region.
Woongsun Kim, Sei-Hyung Ryu, Daniel Jenner Lichtenwalner, Naeem Islam
Filed: 9 Nov 20
Utility
Group III Nitride-based Monolithic Microwave Integrated Circuits Having Multi-layer Metal-insulator-metal Capacitors
14 Sep 23
Semiconductor devices are provided that include a Group III nitride-based semiconductor layer structure.
Jeremy Fisher, Dan Namishia, Scott Sheppard
Filed: 8 Mar 22
Utility
Package for power electronics
12 Sep 23
A package for power electronics includes a power substrate, a number of power semiconductor die, and a Kelvin connection contact.
Brice McPherson, Daniel Martin, Jennifer Stabach
Filed: 21 Dec 21