2001 patents
Page 24 of 101
Utility
Method of Manufacturing Diamond Substrate
12 Jan 23
A method of manufacturing a diamond substrate includes: a step of placing a laser condensing unit 190 configured to condense laser light B so as to face an upper surface 10a of a block 10 of single crystal diamond; and a step of forming a modified layer 20, which includes a processing mark 21b of graphite and a crack 22b extending along a surface (111) around the processing mark 21b, along the surface (111) of the single crystal diamond at a predetermined depth from an upper surface of the block by radiating the laser light B on the upper surface 10a of the block 10 from the laser condensing unit 190 under predetermined conditions and condensing the laser light B inside the block 10, and moving the laser condensing unit 190 and the block 10 in a relative manner two-dimensionally.
Junichi IKENO, Yohei YAMADA, Hideki SUZUKI, Rika MATSUO, Hitoshi NOGUCHI
Filed: 1 Jul 22
Utility
Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming process
10 Jan 23
A negative resist composition comprising a polymer comprising recurring units having at least two acid-eliminatable hydroxyl or alkoxy groups in the molecule is effective for forming a resist pattern having a high resolution and minimal LER while minimizing defects.
Daisuke Domon, Masayoshi Sagehashi, Masaaki Kotake, Naoya Inoue, Keiichi Masunaga, Satoshi Watanabe
Filed: 21 May 19
Utility
uf7zvr6shu1q4xoz5eqf vvbhtlujhc
10 Jan 23
This water-in-oil emulsion-type stick-shaped deodorant composition contains: (A) a volatile component having a boiling point of 250° C. or less, where the total amount of water and ethanol in the (A) component is 83-100 mass %; (B) component (B-1), component (B-2), or a combination of components (B-1) and (B-2), wherein component (B-1) is an antiperspirant and component (B-2) is a fungicide; (C) a crosslinked silicone surfactant; (D) a non-crosslinked silicone surfactant; and (E) an oily component which has a solid phase at 25° C.
Masayuki Konishi, Ryuichi Inaba
Filed: 21 Aug 18
Utility
j9zso2fb tv7zhop5y6yapv7tr7n39
10 Jan 23
A siloxane polymer comprising polysiloxane, silphenylene, isocyanuric acid, and polyether skeletons in a backbone and having an epoxy group in a side chain is provided.
Hitoshi Maruyama, Kyoko Soga
Filed: 7 Nov 19
Utility
hjy4yqqpbn2vnvs8fntkltrmoqkq893fwv9fsjo7
10 Jan 23
Yoshinori Inokuchi
Filed: 13 Jun 18
Utility
6bdxzewj xkz0529s35g06
10 Jan 23
A film-forming powder containing a rare earth oxyfluoride has an average particle size D50 of 0.6-15 μm, a total volume of ≤10 μm pores of 0.51-1.5 cm3/g as measured by mercury porosimetry, and a BET surface area of 3-50 m2/g is suitable for forming a dense film in high yields or deposition rates and high productivity.
Yuji Kimura, Yasushi Takai, Shigeyuki Nakamura
Filed: 15 Jul 19
Utility
mrcts1gaov9zm9fnnpqqdveigx3mh545ee76taz51sxiwl
10 Jan 23
Jun Hatakeyama, Motoaki Iwabuchi, Yasuyoshi Kuroda
Filed: 25 Jul 19
Utility
1q9ug1lati6 0w87vcdo11p9m0mgyoxkoqh
10 Jan 23
Hatsuhiko Hattori, Atsushi Horinobu, Kensuke Kuwajima
Filed: 28 Mar 19
Utility
uem0kgtqrt3pz9d3382wbjbh6cp3is
10 Jan 23
A solar cell including a semiconductor substrate having a first conductivity type an emitter region, having a second conductivity type opposite to the first conductivity type, on a first main surface of the semiconductor substrate an emitter electrode which is in contact with the emitter region a base region having the first conductivity type a base electrode which is in contact with the base region and an insulator film for preventing an electrical short-circuit between the emitter region and the base region, wherein the insulator film is made of a polyimide, and the insulator film has a C6H11O2 detection count number of 100 or less when the insulator film is irradiated with Bi5++ ions with an acceleration voltage of 30 kV and an ion current of 0.2 pA by a TOF-SIMS method.
Hiroshi Hashigami, Shun Moriyama, Takenori Watabe, Hiroyuki Ohtsuka
Filed: 5 Apr 21
Utility
5amjki6nyt23m bc866iyo4za88dkiozq
5 Jan 23
A cleaning system comprise: a first pipe 20 connected to a reactor 10 used for producing polysilicon by using chlorosilane as a raw material; a heat exchanger 30 connected to the first pipe 20; a second pipe 60 provided between the heat exchanger 30 and the first pipe 20; and a driving unit 50 provided at the first pipe 20 or the second pipe 60.
Atsushi YOSHIDA, Naruhiro HOSHINO, Masahiko ISHIDA
Filed: 27 Jun 22
Utility
iz60z0wyzg9f8vi39evyxnzfdkx9duzft8tcdn299gansewtq27azpjvlm
5 Jan 23
An apparatus for manufacturing a polysilicon rod comprising: a core wire 1 on which polysilicon is deposited; a core wire electrode 60 provided to penetrate a bottom plate 80; an adjustment member 10 provided between the silicon core wire 1 and the core wire electrode 60, and movable with respect to the bottom plate 80; and a cooling part capable of cooling the adjustment member 10.
Naruhiro HOSHINO, Tetsuro OKADA, Masahiko ISHIDA
Filed: 28 Jun 22
Utility
d6f3luxnbie0i cvrgxwxla
5 Jan 23
One of the purposes of the present invention is to provide silicone fine particles which do not aggregate in a thermosetting resin while having softness derived from silicone rubber and have excellent adhesion with the thermosetting resin.
Yoshinori INOKUCHI, Mio SAKAI
Filed: 29 Oct 20
Utility
go5 euu4fyt8146vyg864e37qjovg5vgrc
5 Jan 23
Miyoshi Yamashita, Takeshi Kinsho
Filed: 6 Jun 22
Utility
ecp9hz2xva21d6v4l6m9 lsiv20xo3rgquha4r0ujgz32izjrc
5 Jan 23
Provided are: a wafer processing temporary adhesive that is for temporarily adhering a wafer to a support and that comprises a thermosetting resin composition containing a non-functional organopolysiloxane; a wafer laminate; and a thin wafer manufacturing method.
Mitsuo Muto, Shohei Tagami, Michihiro Sugo
Filed: 1 Dec 20
Utility
yvfj rt4vn680qyk49cceqbg73yvjw1q4711kdax549xmrpfmb17tt
5 Jan 23
Miyoshi Yamashita, Takeru Watanabe, Takeshi Kinsho
Filed: 6 Jun 22
Utility
hhxmajfuw5bmzmkei 92tplajihijdcpao27d
5 Jan 23
The present invention provides a rare-earth sintered magnet that is characterized in that: R (R indicates one or more elements selected from rare-earth elements, wherein Nd is essential), T (T indicates one or more elements selected from iron-group elements, wherein Fe is essential), X (X indicates one or two elements selected from B and C, wherein B is essential), M1 (M1 indicates one or more elements selected from Al, Si, Cr, Mn, Cu, Zn, Ga, Ge, Mo, Sn, W, Pb, and Bi), 0.1 mass % or less of O, 0.05 mass % or less of N, and 0.07 mass % or less of C are contained; the average crystal grain size is 4.0 μm or less; and relational expression (1) 0.26×D+97≤Or≤0.26×D+99 is satisfied assuming that the degree of orientation is Or [%] and that the average crystal grain size is D [μm].
Tetsuya KUME, Kazuaki SAKAKI
Filed: 24 Nov 20
Utility
2nmm585art7 w9itc12dxkpc84p
5 Jan 23
Miyoshi Yamashita, Takeshi Kinsho
Filed: 6 Jun 22
Utility
1taiy6tjy41 1nruegfxacyyczuc9xly0itoalv3la46a1vinm5gt6
5 Jan 23
A method of manufacturing a diamond substrate includes: a step of placing a laser condensing unit 190 configured to condense laser light B so as to face an upper surface 10a of a block 10 of single crystal diamond, a step of forming a modified layer 20, which includes a processing mark 21 of graphite and a crack 22b extending along a surface (111) around the processing mark 21, in a partial region of the upper surface 10a of the block 10 along the surface (111) of the single crystal diamond, along the surface (111) of the single crystal diamond at a predetermined depth from the upper surface 10a of the block 10 by radiating the laser light B on the upper surface 10a of the block 10 from the laser condensing unit 190 under predetermined conditions and condensing the laser light B inside the block 10, and moving the laser condensing unit 190 and the block 10 in a relative manner two-dimensionally, and a step of forming a cleavage plane 25 at the predetermined depth of the remaining region of the upper surface 10a of the block 10 by spontaneously propagating cleavage from the modified layer 20.
Junichi IKENO, Yohei YAMADA, Hideki SUZUKI, Rika MATSUO, Hitoshi NOGUCHI
Filed: 1 Jul 22
Utility
yj2v7ckieqvqnomp4c3clrik2sj964qhkk3sqocw6byycdm2f1
3 Jan 23
Tetsuo Oka, Yoshinori Takamatsu, Takeshi Fukuda
Filed: 26 Apr 19
Utility
arcfq2q0ie205tjz2y6ai405 luddp3ebzd1jn4p
3 Jan 23
A solar cell is provided with: a semiconductor substrate having a light-receiving surface and a non-light-receiving surface; a PN junction section formed on the semiconductor substrate; a passivation layer formed on the light-receiving surface and/or the non-light-receiving surface; and power extraction electrodes formed on the light-receiving surface and the non-light-receiving surface.
Hiroshi Hashigami, Takenori Watabe, Hiroyuki Otsuka
Filed: 28 May 19