997 patents
Utility
Semiconductor device
16 Jan 24
A source pad of a main semiconductor element is electrically connected to an n+-type source region via a barrier metal.
Yuichi Hashizume, Keishirou Kumada, Yoshihisa Suzuki, Yasuyuki Hoshi
Filed: 27 Mar 19
Utility
Switching control circuit and resonant converter
16 Jan 24
A switching control circuit controls switching of a switching device, which controls a resonance current of a resonant converter, with a frequency corresponding to an output voltage of the resonant converter.
Ryuunosuke Araumi, Ryuji Yamada
Filed: 26 Jan 22
Utility
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9 Jan 24
A neutron detector having high sensitivity of detection for low energy neutrons is provided.
Kei Aoyama, Yohei Abe, Tomoya Nunomiya, Masataka Narita, Takashi Nakamura
Filed: 25 May 22
Utility
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9 Jan 24
Types, sizes, and locations of crystal defects of an epitaxial layer of a semiconductor wafer containing silicon carbide are detected.
Hidetatsu Nakamura
Filed: 25 Feb 22
Utility
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9 Jan 24
Provided is a semiconductor device, comprising a semiconductor substrate; and an emitter electrode provided above an upper surface of the semiconductor substrate; wherein the semiconductor substrate has: a first conductive type drift region; a second conductive type base region provided between the drift region and the upper surface of the semiconductor substrate; a second conductive type contact region with a higher doping concentration than the base region, which is provided between the base region and the upper surface of the semiconductor substrate; a trench contact of a conductive material provided to connect to the emitter electrode and penetrate the contact region; and a second conductive type high-concentration plug region with a higher doping concentration than the contact region, which is provided in contact with a bottom portion of the trench contact.
Soichi Yoshida
Filed: 24 Mar 21
Utility
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9 Jan 24
A plug electrode is subject to etch back to remain in a contact hole and expose a barrier metal on a top surface of an interlayer insulating film.
Hiroshi Miyata, Seiji Noguchi, Souichi Yoshida, Hiromitsu Tanabe, Kenji Kouno, Yasushi Okura
Filed: 19 Jan 22
Utility
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2 Jan 24
A method for manufacturing a nitride semiconductor device includes: selectively ion-implanting an element that is other than p-type impurities and n-type impurities into a first region in a first primary surface of a gallium nitride layer so as to generate crystal defects in the first region; selectively ion-implanting a p-type impurity into a second region in the gallium nitride layer, the second region being shallower than the first region in a depth direction and being within the first region in a plan view; and thermally treating said gallium nitride layer that has been ion-implanted with said element and said p-type impurity so as to thermally diffuse said p-type impurity in the second region into a third region that is within the first region and that surrounds a bottom and sides of the second region.
Shinya Takashima, Ryo Tanaka, Katsunori Ueno
Filed: 2 Jul 20
Utility
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2 Jan 24
A nitride semiconductor device is provided, comprising: a first nitride semiconductor layer of a first conductivity-type; a second nitride semiconductor layer of a second conductivity-type provided above the first nitride semiconductor layer; a junction region of a first conductivity-type which is provided to extend in a direction from a front surface of the second nitride semiconductor layer to the first nitride semiconductor layer and has a doping concentration NJFET equal to or higher than that of the first nitride semiconductor layer; and a source region of a first conductivity-type which is provided more shallowly than the junction region and has a doping concentration equal to or higher than the doping concentration NJFET, wherein a dopant of the source region is an element with an atomic weight larger than that of a dopant in the junction region.
Ryo Tanaka, Shinya Takashima, Hideaki Matsuyama, Katsunori Ueno, Masaharu Edo
Filed: 24 Aug 20
Utility
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12 Dec 23
An integrated circuit, including: a first current source; a second current source provided in parallel to the first current source; a first resistor with one end coupled to an output of the first current source; a first bipolar transistor that is diode-connected and is coupled to the other end of the first resistor; a second bipolar transistor that is diode-connected and is coupled to an output of the second current source; a second resistor coupled to the second bipolar transistor; and an output circuit configured to output a voltage based on a first voltage outputted from the first current source and a second voltage outputted from the second current source.
Masashi Akahane, Taizo Asano
Filed: 23 May 22
Utility
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12 Dec 23
An object of the present invention is to provide a power converter capable of preventing upsizing of a chip on which a switching element is formed and detecting the temperature in a switching operation of the switching element.
Takeshi Kamimura
Filed: 27 Dec 21
Utility
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5 Dec 23
To provide a nitride semiconductor device excellent in switching characteristics.
Katsunori Ueno, Yuki Ohuchi
Filed: 22 Sep 21
Utility
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5 Dec 23
An integrated circuit for a power supply circuit that includes a state-indicating circuit, which is a first or second circuit when the power supply circuit is of a non-isolated or isolated type, as the case may be.
Nobuyuki Hiasa
Filed: 26 Jan 22
Utility
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5 Dec 23
A sensor device for measuring a physical quantity.
Kimihiro Ashino
Filed: 29 Dec 21
Utility
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5 Dec 23
A short circuit detector is included in a power converter, the power converter being configured to supply power to a load via a first arm including a first semiconductor switch and a second arm including a second semiconductor switch.
Kunio Matsubara, Ryoga Kiguchi
Filed: 29 Dec 21
Utility
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28 Nov 23
In a semiconductor device, it is preferable to suppress a variation in characteristics of a temperature sensor.
Motoyoshi Kubouchi, Soichi Yoshida
Filed: 11 May 21
Utility
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28 Nov 23
Provided is a semiconductor device including a semiconductor substrate; a transistor portion provided in the semiconductor substrate; a current sensing portion for detecting current flowing through the transistor portion; an emitter electrode set to an emitter potential of the transistor portion; a sense electrode electrically connected to the current sensing portion; and a Zener diode electrically connected between the emitter electrode and the sense electrode.
Kaname Mitsuzuka, Yuichi Onozawa
Filed: 24 Dec 20
Utility
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28 Nov 23
A nitride semiconductor device includes a GaN-based semiconductor layer; and an insulating film provided on a first surface of the GaN-based semiconductor layer, the insulating film containing O atoms, and other constituent atoms other than O.
Yuki Ohuchi, Katsunori Ueno
Filed: 26 Feb 21
Utility
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21 Nov 23
A semiconductor device is disclosed in which proton implantation is performed a plurality of times to form a plurality of n-type buffer layers in an n-type drift layer at different depths from a rear surface of a substrate.
Yuichi Onozawa
Filed: 11 Dec 20
Utility
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21 Nov 23
A semiconductor module includes: a semiconductor device; a bonding layer that is arranged on the semiconductor device, contains nickel or copper, and is electrically connected to the semiconductor device; a solder portion containing gold, disposed on the bonding layer; and a protective layer disposed directly on the bonding layer, covering an outer peripheral edge of the bonding layer.
Yasuaki Hozumi
Filed: 25 May 22
Utility
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21 Nov 23
A silicon carbide semiconductor device includes silicon carbide semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type, a first semiconductor region of the first conductivity type, a trench, a gate insulating film, a gate electrode, and an interlayer insulating film.
Masaki Miyazato
Filed: 31 Aug 21