997 patents
Page 4 of 50
Utility
Short circuit protection apparatus for power conversion apparatus
18 Jul 23
A short circuit protection apparatus for a power conversion apparatus supplying power to a load via a plurality of switches connected to each other in parallel includes Ma current detectors each configured to detect a sum of currents flowing through two or more switches among the plurality of switches so as to output a detection signal indicative of the sum that is detected, wherein Ma is 1 less than M, which is the number of the plurality of switches, and a short circuit determiner configured to determine, based on detection signals obtained from the respective Ma current detectors, occurrence of short circuit failure in the plurality of switches to output a cutoff instruction signal for stopping on-off drive of the plurality of switches.
Yasunao Saga
Filed: 31 Jan 22
Utility
Switching control circuit and LLC converter
18 Jul 23
A switching control circuit for controlling an LLC converter that includes a first switching device, a first free-wheeling diode connected in parallel with the first switching device, a second switching device connected in series with the first switching device and the first free-wheeling diode, and a second free-wheeling diode connected in parallel with the second switching device.
Ryuunosuke Araumi, Ryuji Yamada
Filed: 25 Mar 21
Utility
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18 Jul 23
An integrated circuit for a power supply circuit configured to generate an output voltage at a target level.
Tsuyoshi Yoshizawa
Filed: 23 Jun 21
Utility
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11 Jul 23
Provided is a semiconductor device including: a drift region of first conductivity type provided in a semiconductor substrate; a base region of second conductivity type provided in the semiconductor substrate; an emitter region of first conductivity type provided at a front surface of the semiconductor substrate; a contact region of second conductivity type provided on the base region and having a higher doping concentration than the base region; a contact trench portion provided at the front surface of the semiconductor substrate; a first barrier layer provided at a side wall and a bottom surface of the contact trench portion; and a second barrier layer provided in contact with the contact region at the side wall of the contact trench portion.
Makoto Shimosawa, Takeyoshi Nishimura
Filed: 25 May 21
Utility
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11 Jul 23
A semiconductor device includes: a semiconductor layer of a first conductivity-type; a well region of a second conductivity-type provided at an upper part of the semiconductor layer; a base region of the second conductivity-type provided at an upper part of the well region; a carrier supply region of the first conductivity-type provided at an upper part of the base region; a drift region of the first conductivity-type provided separately from the base region; a carrier reception region of the first conductivity-type provided at an upper part of the drift region; a gate electrode provided on a top surface of the well region interposed between the base region and the drift region via a gate insulating film; and a punch-through prevention region of the second conductivity-type provided at the upper part of the well region and having an impurity concentration different from the impurity concentration of the base region.
Kazumi Takagiwa, Hitoshi Sumida
Filed: 31 Jan 22
Utility
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4 Jul 23
In a silicon carbide semiconductor device and a silicon carbide semiconductor circuit device equipped with the silicon carbide semiconductor device, a gate leak current that flows when negative voltage with respect to the potential of a source electrode is applied to the gate electrode is limited to less than 2×10−11 A and the gate leak current is limited to less than 3.7×10−6 A/m2.
Keiji Okumura, Akimasa Kinoshita
Filed: 1 Oct 20
Utility
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4 Jul 23
An uninterruptible power supply includes a plurality of uninterruptible power supply modules each including a power converter, an input/output module that outputs power converted by the power converter to an outside of the uninterruptible power supply, and a disconnection module including a housing that houses disconnection switches that electrically disconnect each of the plurality of uninterruptible power supply modules individually.
Tomo Kurozaki, Seiitsu Kin
Filed: 13 Jul 20
Utility
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4 Jul 23
A body diode is energized by inputting a BD energization pulse signal having a predetermined cycle.
Makoto Utsumi, Masaki Miyazato
Filed: 30 Nov 21
Utility
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27 Jun 23
A semiconductor device, having a first semiconductor chip including a first side portion at a front surface thereof and a first control electrode formed in the first side portion, a second semiconductor chip including a second side portion at a front surface thereof and a second control electrode formed in the second side portion, a first circuit pattern, on which the first semiconductor chip and the second semiconductor chip are disposed, a second circuit pattern, and a first control wire electrically connecting the first control electrode, the second control electrode, and the second circuit pattern.
Mitsuhiro Kakefu, Hiroaki Ichikawa
Filed: 21 Jan 21
Utility
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30 May 23
Provided is a semiconductor module including semiconductor devices and a cooling apparatus, wherein the semiconductor device has semiconductor chips and a circuit board with the semiconductor chips implemented thereon; the cooling apparatus has a top plate, a side wall, a bottom plate, a coolant flow portion, an inlet, an outlet and a plurality of fins; the top plate and the bottom plate have three through holes that are through holes for inserting fastening members that fasten the semiconductor module to an external apparatus, penetrating the top plate and the bottom plate in one direction respectively; and a geometric center of gravity of a aperture of at least one of the inlet and the outlet may also be positioned inside a virtual triangle with the three through holes being vertexes in planar view.
Kensuke Matsuzawa, Takahiro Koyama, Hiromichi Gohara
Filed: 24 Feb 21
Utility
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30 May 23
A semiconductor device, including a capacitor, a semiconductor module having a first power terminal formed on a front surface of a first insulating member, and a connecting member electrically connecting and mechanically coupling the semiconductor module and the capacitor to each other, the connecting member having a front surface and a rear surface opposite to each other, the rear surface being on a front surface of the first power terminal.
Shinji Tada, Ryoichi Kato, Yoshinari Ikeda, Yuma Murata
Filed: 11 Jun 21
Utility
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30 May 23
A driver circuit for driving a switching device having a control electrode.
Shinichiro Adachi, Hirohisa Arai
Filed: 26 Jan 22
Utility
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23 May 23
A magnetic field generator including: a yoke; and a plurality of main magnetic pole magnets and a plurality of secondary magnetic pole magnets, the main magnetic pole magnets and the secondary magnetic pole magnets comprising a rare earth sintered magnet, having magnetic pole orientations different from each other by substantially 90°, and being alternately arranged in a linear Halbach magnet array without gaps and fixed to the yoke, wherein near contact surfaces of the main magnetic pole magnets and the secondary magnetic pole magnets, a grain boundary diffusion layer is formed in which at least one of Dy or Tb being heavy rare earth elements or a compound of at least one of the Dy or the Tb is diffused into internal grain boundaries from the contact surfaces.
Satoshi Imamori, Terukazu Akiyama
Filed: 24 Jan 22
Utility
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23 May 23
A semiconductor device includes a semiconductor unit, a printed circuit board and a case, including a bottom portion formed in a plate-like shape and a side wall portion surrounding an outer periphery of the bottom portion of the case.
Kenshi Terashima
Filed: 27 Jul 21
Utility
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23 May 23
An active region has first and second cell regions respectively disposed in a main IGBT and a sensing IGBT.
Tohru Shirakawa
Filed: 30 Nov 20
Utility
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23 May 23
A semiconductor device having a semiconductor module.
Motohito Hori, Yoshinari Ikeda, Akira Hirao, Tsunehiro Nakajima
Filed: 30 Oct 20
Utility
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23 May 23
A grid connected inverter is connectable to a power grid having a synchronous generator connected thereto, and is operable according to an output active power command generated by a virtual synchronous generator control function, to thereby reduce grid frequency variation.
Songhao Yin
Filed: 22 Jan 21
Utility
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9 May 23
A p-type semiconductor region is formed in a front surface side of an n-type semiconductor substrate.
Hiroki Wakimoto, Hiroshi Takishita, Takashi Yoshimura, Takahiro Tamura, Yuichi Onozawa
Filed: 4 Feb 21
Utility
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2 May 23
A semiconductor device includes a semiconductor chip, a substrate having a main surface on which the semiconductor chip is arranged, a resin case which has a storage space therein and a side wall, the side wall having an injection path extending from the storage space to a device exterior, the resin case having a first opening at a bottom side thereof, connecting the storage space to the device exterior, the substrate being disposed on the resin case, at a main surface side of the substrate facing at the bottom side of the resin case, and a sealing material filling the storage space and the injection path.
Yuji Ichimura
Filed: 29 Oct 19
Utility
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25 Apr 23
There is provision of an operation support system for supporting an operation of a demand-supply system including a resource supplying facility and a resource demander facility.
Satoshi Kiryu, Yoshio Tange
Filed: 20 Jul 18